Dept of Electronics & Telecommunication.

Lab Manual of VLSI SEM-5

Experiment No. 1

Date of performance:

1) Aim: Installation of tsmc 180nm Technology files in LT-SPICE and Characterization of

NMOS Transistor.

2)Apparatus: Desktop or Laptop.

3)Software tool: LT-SPICE.

4)Circuit Diagram:
 Dept of Electronics & Telecommunication.
Lab Manual of VLSI SEM-5

5) Procedure.
For installing 180nm technology file in LT-SPICE.
 Download the technology file for 180nm MOSFET from the Internet. You require three
files cmosn, cmosp and tsmc018. Store these files in your PC.
 Open LT-SPICE and click on file and new schematic. Then click on select component
icon, a new window will open. In this window you will get a path of C drive where your
LT-SPICE is installed. Note down this path.
 In this path you must paste two files cmosn.asy and cmosp.asy. These two files you are
storing in sym i.e., symbol folder. Now come back to lib/sub folder and in that paste the
file tsmc018.lib
 Now close LT-SPICE and gain restart it i.e. open the LT-SPICE and click on file, then
new schematic, then click on. . op (Spice directive). A new window will open in that
you have type. INCLUDE tsmc018.lib.
For characterization of 180nm NMOS Transistor.
 Open LT-SPICE and click on file and new schematic. Then click on select component
icon, a new window will open. In this window select the NMOS Transistor cmosn.
 Then right click on symbol of NMOS transistor and select its channel length as 180nm
(nano meter) and channel width as 1u(micro-meter)
 Construct the circuit shown in circuit diagram in LT-SPICE.
 To plot Transfer Characteristics, keep VDD=1.8V and vary the VGG from 0 to 1.8V
 From the transfer characteristics calculate gm of given NMOS Transistor.
 To plot output or drain to source characteristics keep VGG=0.8V and vary the VDD
from 0 to 1.8V in LT-SPICE
 From the output characteristics calculate ro for the given transistor.
 Note down the value of drain current in saturation region and using that calculate the
value of process transconductance µnCOX, Using the drain current equation.
ID = µnCOX/2*(W/L) *(VGS-VTN)2
 Using the value of ro Calculate the value of λ (Channel length modulation coefficient) by
using equation.
Ro = (1/ λ*ID).
 Repeat the above procedure for W=2u,L= 180nm and for W= 1um and L= 360nm.

6.Results:
Paste the graphs from LT-SPICE here.
 Dept of Electronics & Telecommunication.
Lab Manual of VLSI SEM-5

8.Calculation:
Write down all the calculation here.

9. Conclusion:

Write down the conclusion of your experiment here.

10.Post lab Questions.

 Why MOSFET is known as Field effect transistor?

 Define threshold voltage of MOSFET.
 What is the maximum supply voltage for 180nm MOSFET?
 Give the difference between NMOS & PMOS in tabular form.

Presentation/
Learning Outcome
Practical
[Theory,
Performance
Observation, Total (10 Sign Date of Submission.
[Model/Code,
Conclusion] (5 Marks)
Results]
Marks)
(5 Marks)