ftp.#Ere*A*H!..i**c.i.

c:l*
" "' "
"

^
n

,
BA BA "

I *
'
,

"

PBTayq.E E#&
<
+ ' % ••
pea
i. .

¥EE¥
B

,BoBT•I
.
-

s¥*÷÷(qe,&u•tB-%rilzpa÷÷l-2-Bqzoq .im
a

Semiconductor Electronics
Get in Touch @

Telegram @ Sunil Jangra Sir

"¥mTg••• •* instagram @ Suniljangra26

MmzB%Rq
: ¥ ÷ ÷ : ÷ i É ÷ ÷ É ÷ µ q g
FER
'

Youtube @ Sunil Jangra Physics

⇐¥¥¥i÷±÷¥→-⇐ j
class

%%
%Ba.ae
☒Er←BBBtfB
debased
→
 Semiconductor Electronics
class -
12M NCERT CH -
14 Acc to New
.

Syllabus .

Classification of solids on the Basis of Energy Bands

Insulators : in insulators , the

valence band is completely filled
whereas the conduction band is

completely empty .

As there is no electron in conduction

band so no electrical conduction is
possible .
The energy gap between
conduction band and valence band
is so Large ( Eg > 3 ell) that no electron
in valence band can be provided so
'

much energy from

any external
source that it can jump this energy gap .

Semiconductors : The energy band structure of a semiconductor is shown in

figure (b) It is similar to that of an insulator but
.

with a comparatively small energy gap C Eg <3 ex) .

At absolute temperature , the conduction band of semiconductor is

totally empty and valence band is completely filled .

Therefore , they are insulators at Low temperatures .

However, at room Temperhere , some electrons in the valence band acquire

'

thermal energy greater than energy band gap and jump over to the conduction
band where they are free to move under the influence of even a small electric
field and acquire small conductivity .

Hence the resistance of semiconductor is not as high as that of insulators .

conductors (Metal) on In case of metals either the conduction band is

partially filled and valence band is partially
empty , conduction band and valence band overlap
or .

In case of overlap ing electrons from valence band can easily

move into the conduction band, thus Large number of electrons available
For conduction .

In case valence band is empty g electrons from its lower level can
move to higher level
making conduction possible .

This is the reason why resistance of metal is how or the conductivity

is high o

Energy Bands of solids

Li! Valence Band → This energy band contains valence electrons This band may be .

partially or completely filled with electrons but never be empty .

The electron in this band are not capable of gaining energy from
external electric field to take part in conduction of current -
 ④ Conduction Band 8 This band contains conduction electrons This band is either .

empty or
partially filled with electrons .

→ Electrons present in this band take part in the conduction of current .

Liii) forbidden Band : This band is completely empty . As temperature increases ,

Forbidden energy gap decreases
.

Note →
The minimum energy required to shift an electron from valence band to
conduction band is called Badd Gat C Eg)
.

Types of SEMICONDUCTOR

i) intrinsic semiconductors .

④ Extrinsic semiconductor .

A semiconductor in its pure state A semiconductor doped with a

is called intrinsic semiconductor .
suitable impurity to increase its
or conductivity is called extrinsic
A pure semiconductor which is free semiconductor .

is known as
From every impurity Types
intrinsic semiconductor .

I ↳
e.
g Germanium ( Gel and Silicon Csi )

→ in intrinsic semiconductors, the

number of free electron he is
equal
{YITh {EoLPd%fomihg
to the number of holes ha That is .

hh n type semiconductor when a

he hi
→

@BGgGoy
- - -
- -

small amount of pentavalent

ni
= intrinsic carrier concentration .
impurity is added to a
pure
good semiconductor it is known as
,
n -

type semi conductor .

Bond
.

covalent
→ i. e intrinsic -1 Pentavalent -= n type -

Semiconductor Semiconductor .

P type semiconductor : when

-
a
small amount of trivalent
impunity is added to a pure
it is known
EGG
semiconductor ,
as
→ all the valence electrons of semi conduct P -

type semiconductor .

-
tor atoms are occupied in covalent.EE
bonding . ie
-

Intrinsic + trivalent =
p
-

type .

→ whentemperature is raised some of Semiconductor impurity

the covalent bonds in semiconductor
break due to thermal energy supplied . •
Pentavalent→ As , Sb, P etc .

Thus the electron which set free ,

provide small electrical conductivity to •
Trivalent → Ing B , Al etc .

a semiconductor crystal

→ conductivity of extrinsic semi -

→ when electron breaks its covalent

an conductor is high .

bond and becomes free , a vacancy is

created in the valence band .
 )
→ This missing electron in a covalent bond
hole which acts
ctsnacagueed
a as + ve

→ conductivity of intrinsic semiconductor

is low .

N -
Type semiconductor ;-7 =
A pentavalent impurity atom has
Five valence electron On .

adding
it to a semiconductor four of its electron form
,
covalent bond with semiconductor atoms
, leaving
the fifth valence electron unoccupied
small amount of
Thus on
adding pentavalent
impurity like As or Sb
, Large number of free
electron are produced in a semiconductor crystal .

→ The Fifth valence electron of impurity atom

,
called
as Donar o
→ so in n -

type semiconductor majority carriers are free electron and

minority carries are holes .

→
ie heh n
-
-

hit g ni is the number

density of electron in a conduction
band
→ so in n -

type semiconductor, current is mainly conducted by

free electron o

P-

type semiconductor :

when a small amount of trivalent

is added to a pure semi
impurity
conductor , it is called P type semi -
-

-
conductor .

trivalent impurity atom has three

A
valence electrons on
adding it to a .

semiconductor three of its electron

,
Form three covalent bonds with semiconductor atoms , leaving
the fourth covalent bond incomplete, with a vacancy of one electron .

This missing electron in the fourth covalent bond behaves as a hole .

,
The trivalent impurity atom are known as Acceptor atom .

p type semiconductor , majority

'
In -
carriers are holes and minority carriers are
free electrons .

→ ie henn =
hit or nh > he , so in p type
-

,
current is mainly
conducted by holes
'

in p type semiconductor , from

-
positive to negative terminal of Semiconductor Crystal .

Electrical I.
Conductivity of a semiconductor a
-

let us consider semiconductor crystal of length

a
Af
section area A across which a potential
g y
' ,
l and cross -

x is applied then Magnitude of electric field are set up

, -
y -

inside it
E-
Ie -
lit
 Electric current flowing through the semiconductor is the both due to free electrons
and holes and is given by
I = Iet In from drift velocity & current relation
I = nee Ave +
nneavh I= ett Chevet nhvin)
-
cis .

he = no .

density of free electron hhz no -

density of free Holes .

so mobility of free electron is

Ciii )
HE
¥ ve HEE
- -
-

mobility of holes is CD
teh
VIE Ye Une
-
-
.
-

using equation Ciii ) & Ev) in eg

EAEC nemeth n Un)
CAVE lnelletnhlle)
R=¥= leached
I =
or E- or

'hnUu7 et

P=R¥=eA¥etnnUn7 ¥
so

or p =
I
ecneuetnn Un )
so the electrical conductivity of semiconductor is then given by
,

f-
Ip or r =
ecneeletnhllh )
→ In Intrinsic semiconductor r =
ene Cnet un ) ooo ne nn
-
-
-
-
n

→ In extrinsic n -

type r -
-

eneue
°
: he> inn
→ In extrinsic p -

type r -
-
en nah
o
: nm> he

Note!→ as we > ten , so electrical conductivity of n -

type is more that that

of p -

type semiconductor .

PN Junction Diode on An arrangement consisting a p type semiconductor -

brought into a close contact with n type semiconductor , is called p n - -

junction → potential barrier

't
.

How ever if this junction is provided with P t n

a * I
metallic contacts at the ends for the ④ ④ to a - -

att , • •
• •

M
application
*

of external it is
voltage , then
I ⑧ 000

④ ④ ④
- -
a att ,
A • • •

junction
'
called Diode att
Pn p
- -
.
• •
l
④ ④ ④
a
a •

of
•
att ;
-

L y "
""

Engr:b! Electron-hole
Junction
P N

P N

when ph junction
is formed then at the junction free electrons from
,
n -

type
diffuse over to p type , thereby filling in the holes in p type
- - .
 Due to this a layer of positive charge is built on
p side and
-
a layer of
negative charge p side of pn junction This layer sufficiently
is built on - .

grows up within a very short time of the junction being formed, preventing any
Further movement of change carriers across the pn junction .

Thus a potential difference Vo of the order of o I to 0.3 V is setup across the .

potential
"

junction junction barrier

"
pan called barrier or .

The thin region around the junction containing immobile positive and negative
is known "
depletion layer
"

changes as .

Biasing
← →
① Forward
.

mmmm
Biasing ② . Reverse
rumrunner
Biasing .

is Forward
.

Biasing → when the tve terminal of battery is connected to p side and -

negative to n -
side of ph junction then pn junction is said to be forward
,
biased .

→
depletion layer reduces
The width of
and external applied field is able to
overcome the
strong electric field of
depletion layer .

→
movement of the majority charge carriers
across the junction gets established

Initially increases almost

→ the current
negligibly ,
till the voltage across

the diode threshold

crosses
voltage or knee
voltage
.

cutoff diode current increases exponentially

After the
voltage the .

Knee
voltage voltage for Ge diode is 0.3 V and for si diode is about
0.7 Ho
→ In forward biasing resistance of
diode is very low , which can

be obtained by the slope of IV

characteristics .

② .
Reverse Biasing : when the tue
terminal of battery is connected to

n side and
-

negative terminal to P side

-

of a p -
n junction , then the p n junction-

is said to be Reverse Biased .

→
The width of depletion layer increases
and the electric field of depletion layer
becomes more
stronger .

depletion layer does not at all allow the transfer of

majority charge
→
The now

carriers while support the crossing of minority charge carrier .

Thus the
reverses current flow only due to
minority change carriers .
 → for the diode in very small treeA) and almost
reverse bias
,
the current is
remain constant However , for special cases
.

,
at very high reverse
bias C breakdown voltage) the current suddenly increases The
general .

,
diode are not used the reverse saturation current
purpose beyond region .

RECTIFIER
Rectifier is a circuit which converts alternating current La c) into direct
.

current Cd c) . .

of Rectifier Principle
Pn junction diode is a unidirectional device i e it allows
. -

the current to flow through it only in one direction , when

it is in forward bias
'
.

TYPES
Half wave Rectifier full Rectifier

¥÷ :÷ ÷: ÷:i ÷ ¥÷ ÷
wave .

A half wave rectifier converts full wave rectifier converts the

A
the half cycle of applied AC whole cycle of applied AC signal
signal tosignal Ordinary
D.c .
into Dc signal .
centre tap -

transformer may be used here '

.
transformer is used here .

Circuit circuit
diagram diagram

D, Da Di Da Di D2

:÷÷:÷÷÷:÷÷:÷¥:÷ .

→
For -
ve half cycle ,
diode is → for -
ve half Cycle Diode Da is forward
reversed bias .
i -
e do not biased .
i. e Dz conduct and we
get
conduct , no output across output across RL .

Ro

Special Purpose p
-
n junction Diode .

47 LED ② Photodiode (3) .

Solar cell .
① LED (
light Emitting Diode) → Gt converts electrical energy into light energy .

9T is heavily doped p -
n
junction which operates under forward bias
and emits spontaneous radiation .

→ The I-V characteristics of a LED is similar

to that of Si junction diode But the threshold .

voltagesare much higher and

slightly different
for each colour The reverse breakdown voltages
.

of LEDs are very low , typically around 54 -

The colour of light depends upon the types of material used

in making the semiconductor diode

Aisoycoeuerf
.

Li ?GaAs → Infrared radiation .

Ii ) Gap → Red or
green
Liii) GaAs P → Red or yellow light .

PHOTODIODE
A photodiode is a special type of junction diode used for
detecting optical signals Gt is a . reverse biased pn junction
made from a photosensitive material .

when it is illuminated with

light of photon energy greater
than the energy gap of the
semiconductor , electron -
hole
pains are
generated in near

relepletion region .

external is used for the movement of electron &

The voltage
holes
aisocouerusesz
.

Solar cell
Gt convert solar energy electrical energy into .

A solar cell Is basically a ph junction

which generates emf when solar radiation
Falls on the ph junction gt works on the .

same principle of
photodiode
is
except
that no external bias applied and
the junction area is kept laegeo

albicans