IRFPS40N60K, SiHFPS40N60K

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Low Gate Charge Qg Results in Simple Drive
VDS (V) 600 Available
Requirement
RDS(on) () VGS = 10 V 0.110
• Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
COMPLIANT
Qg (Max.) (nC) 330
Ruggedness
Qgs (nC) 84
• Fully Characterized Capacitance and Avalanche Voltage
Qgd (nC) 150 and Current
Configuration Single
• Enhanced Body Diode dV/dt Capability
D
• Compliant to RoHS Directive 2002/95/EC

Super-247 APPLICATIONS
• Hard Switching Primary or PFC Switch
G
• Switch Mode Power Supply (SMPS)
S
• Uninterruptible Power Supply
D
G S • High Speed Power Switching
N-Channel MOSFET • Motor Drive

ORDERING INFORMATION
Package Super-247
IRFPS40N60KPbF
Lead (Pb)-free
SiHFPS40N60K-E3
IRFPS40N60K
SnPb
SiHFPS40N60K

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 600
V
Gate-Source Voltage VGS ± 30
TC = 25 °C 40
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 24 A
Pulsed Drain Currenta IDM 160
Linear Derating Factor 4.5 W/°C
Single Pulse Avalanche Energyb EAS 600 mJ
Repetitive Avalanche Currenta IAR 40 A
Repetitive Avalanche Energya EAR 57 mJ
Maximum Power Dissipation TC = 25 °C PD 570 W
Peak Diode Recovery dV/dtc dV/dt 7.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 0.84 mH, Rg = 25 , IAS = 38 A, dV/dt = 5.5 V/ns (see fig. 12a).
c. ISD  38 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91261 www.vishay.com
S11-0112-Rev. B, 31-Jan-11 1
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40
Case-to-Sink, Flat, Greased Surface RthCS 0.24 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 0.22

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V
Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA
VDS = 600 V, VGS = 0 V - - 50
Zero Gate Voltage Drain Current IDSS μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 24 Ab - 0.110 0.130 
Forward Transconductance gfs VDS = 50 V, ID = 24 Ab 21 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 7970 -
Output Capacitance Coss VDS = 25 V, - 750 -
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 75 -
pF
VDS = 1.0 V , f = 1.0 MHz - 9440 -
Output Capacitance Coss
VGS = 0 V VDS = 480 V , f = 1.0 MHz - 200 -
Effective Output Capacitance Coss eff. VDS = 0 V to 480 Vc - 260 -
Total Gate Charge Qg - - 330
ID = 38 A, VDS = 480 V,
Gate-Source Charge Qgs - - 84 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 150
Turn-On Delay Time td(on) VGS = 10 V - 47 -
Rise Time tr - 110 -
VDD = 300 V, ID = 38 A, ns
Turn-Off Delay Time td(off) RG = 4.3 , see fig. 10b - 97 -
Fall Time tf - 60 -
Drain-Source Body Diode Characteristics
MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - 40
showing the
integral reverse G
A
Pulsed Diode Forward Currenta ISM p - n junction diode S - - 160

Body Diode Voltage VSD TJ = 25 °C, IS = 38 A, VGS = 0 Vb - - 1.5 V

TJ = 25 °C - 630 950
Body Diode Reverse Recovery Time trr ns
TJ = 125 °C IF = 38 A, dI/dt = 100 - 730 1090
TJ = 25 °C A/μs - 14 20
Body Diode Reverse Recovery Charge Qrr μC
TJ = 125 °C - 17 25
Body Diode Recovery Current IRRM TJ = 25 °C - 39 58 A
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

www.vishay.com Document Number: 91261

2 S11-0112-Rev. B, 31-Jan-11
 IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1000 1000
VGS
TOP 15V
10V
100 8.0V
ID, Drain-to-Source Current (A)

7.0V 100
6.0V T J= 150 ° C
5.5V

I D, Drain-to-Source Current (A)

10 5.0V
BOTTOM 4.5V
10

1
TJ = 25 °C
1
0.1
4.5V

0.01 0.1
20μs PULSE WIDTH
Tj = 25°C V DS= 50V
0.001 20μs PULSE WIDTH
0.01
0.1 1 10 100 4 6 8 10 11 13 15

VDS, Drain-to-Source Voltage (V) V GS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

100 3.5
VGS I D = 38A
TOP 15V
10V
8.0V 3.0
ID, Drain-to-Source Current (A)

7.0V
6.0V
5.5V
R DS(on) , Drain-to-Source On Resistance

2.5
10 5.0V
BOTTOM 4.5V
(Normalized)

2.0

4.5V
1.5

1
1.0

20μs PULSE WIDTH 0.5

Tj = 150°C
0.1 V GS = 10V
0.0
0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160

VDS, Drain-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91261 www.vishay.com

S11-0112-Rev. B, 31-Jan-11 3
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix

100000 1000
VGS = 0V, f = 1 MHZ
C =C +C , C SHORTED
iss gs gd ds
C =C
rss gd
C =C +C
oss ds gd
10000 100
Ciss
C, Capacitance(pF)

I SD , Reverse Drain Current (A)

T J= 150 ° C
1000 10

Coss

TJ = 25 °C
100 1

Crss

V GS = 0 V
10 0.1
0.2 0.6 0.9 1.3 1.6
1 10 100 1000
V SD,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

12 1000
I D = 38A VDS = 480V OPERATION IN THIS AREA
VDS = 300V LIMITED BY R DS(on)
VDS = 120V
ID, Drain-to-Source Current (A)

10
100
VGS , Gate-to-Source Voltage (V)

7
100μsec
10

5 1msec

1
2
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0 0.1
0 50 100 150 200 250 1 10 100 1000 10000
QG, Total Gate Charge (nC)
VDS , Drain-toSource Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91261

4 S11-0112-Rev. B, 31-Jan-11
 IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix

RD
VDS
40

VGS
D.U.T.
RG
+
- VDD
30

10 V
I D , Drain Current (A)

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
20
Fig. 10a - Switching Time Test Circuit

VDS
10
90 %

0
25 50 75 100 125 150 10 %
TC , Case Temperature ( ° C) VGS
td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms

1
(Z thJC )

D = 0.50
0.1

0.20
Thermal Response

0.10

0.05
P DM

0.01 0.02 SINGLE PULSE

0.01 t1
(THERMAL RESPONSE)
t2

Notes:
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJC +TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1

t 1, Rectangular Pulse Duration (sec)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91261 www.vishay.com

S11-0112-Rev. B, 31-Jan-11 5
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix

5.0

VGS(th) Gate threshold Voltage (V)

15 V 4.5

4.0
L Driver ID = 250μA
VDS

3.5
RG D.U.T. +
- VDD
A
IAS 3.0
20 V
tp 0.01 Ω
2.5

Fig. 12a - Unclamped Inductive Test Circuit

2.0
-75 -50 -25 0 25 50 75 100 125 150

T J , Temperature ( °C )
VDS
Fig. 12d - Threshold Voltage vs. Temperature
tp

QG
VGS V

IAS QGS QGD

VG

Fig. 12b - Unclamped Inductive Waveforms

Charge
1200
ID
TOP 17A
24A Fig. 13a - Basic Gate Charge Waveform
960 BOTTOM 38A
EAS , Single Pulse Avalanche Energy (mJ)

Current regulator
Same type as D.U.T.
720

50 kΩ

12 V 0.2 µF
480 0.3 µF

+
VDS
D.U.T. -
240
VGS

3 mA

0
25 50 75 100 125 150
IG ID
Starting Tj, Junction Temperature ( ° C) Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 12c - Maximum Avalanche Energy vs. Drain Current

www.vishay.com Document Number: 91261

6 S11-0112-Rev. B, 31-Jan-11
 IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91261.

Document Number: 91261 www.vishay.com

S11-0112-Rev. B, 31-Jan-11 7
 Package Information
www.vishay.com
Vishay Siliconix
TO-274AA (High Voltage)

A
B E A
D2
E4 A1 E1
R

D1
D

L1

L Detail “A”

C
e b
A2

0.10 (0.25) M B A M

10°

b2 b4
5° Lead Tip
Detail “A”
Scale: 2:1

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.70 5.30 0.185 0.209 D1 15.50 16.10 0.610 0.634
A1 1.50 2.50 0.059 0.098 D2 0.70 1.30 0.028 0.051
A2 2.25 2.65 0.089 0.104 E 15.10 16.10 0.594 0.634
b 1.30 1.60 0.051 0.063 E1 13.30 13.90 0.524 0.547
b2 1.80 2.20 0.071 0.087 e 5.45 BSC 0.215 BSC
b4 3.00 3.25 0.118 0.128 L 13.70 14.70 0.539 0.579
c (1) 0.38 0.89 0.015 0.035 L1 1.00 1.60 0.039 0.063
D 19.80 20.80 0.780 0.819 R 2.00 3.00 0.079 0.118
ECN: X17-0056-Rev. B, 27-Mar-17
DWG: 5975
Notes
• Dimensioning and tolerancing per ASME Y14.5M-1994
• Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outer extremes of the plastic body
• Outline conforms to JEDEC® outline to TO-274AA
(1) Dimension measured at tip of lead

Revision: 27-Mar-17 1 Document Number: 91365

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16 1 Document Number: 91000