IRFH5220PbF

HEXFET® Power MOSFET

VDS 200 V
RDS(on) max
99.9 mΩ
(@VGS = 10V)
Qg (typical) 20 nC
RG (typical) 2.3 Ω
ID
20 A PQFN 5X6 mm
(@Tc(Bottom) = 25°C)

Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features Benefits

Low RDSon Lower Conduction Losses

Low Thermal Resistance to PCB (≤ 1.2°C/W) Enable better thermal dissipation
100% Rg tested Increased Reliability
Low Profile (≤ 0.9 mm) results in Increased Power Density
Industry-Standard Pinout ⇒ Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability

Standard Pack
Orderable part number Package Type Note
Form Quantity
IRFH5220TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH5220TR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice # 259

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage 200
V
VGS Gate-to-Source Voltage ± 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.8
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.0
ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 20
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 13 A
ID @ TC(Top) = 25°C Continuous Drain Current, VGS @ 10V 5.8
ID @ TC(Top) = 100°C Continuous Drain Current, VGS @ 10V 3.7
IDM Pulsed Drain Current c 47
PD @TA = 25°C Power Dissipationg 3.6
PD @ TC(Top) = 25°C Power Dissipationf 8.3
W

f
Linear Derating Factor 0.07 W/°C
TJ Operating Junction and -55 to + 150
°C
TSTG Storage Temperature Range
Notes  through … are on page 8

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Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250μA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.21 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 80 99.9 mΩ VGS = 10V, ID = 5.8A e
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V
VDS = VGS, ID = 100μA
∆VGS(th) Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 200V, VGS = 0V
––– ––– 1.0 mA VDS = 200V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 16 ––– ––– S VDS = 50V, ID = 5.8A
Qg Total Gate Charge ––– 20 30
Qgs1 Pre-Vth Gate-to-Source Charge ––– 5.4 ––– VDS = 100V
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.3 ––– VGS = 10V
nC
Qgd Gate-to-Drain Charge ––– 6.3 ––– ID = 5.8A
Qgodr Gate Charge Overdrive ––– 7.0 ––– See Fig.17 & 18
Qsw Switch Charge (Qgs2 + Qgd) ––– 7.6 –––
Qoss Output Charge ––– 9.4 ––– nC VDS = 16V, VGS = 0V
RG Gate Resistance ––– 2.3 ––– Ω
td(on) Turn-On Delay Time ––– 7.2 ––– VDD = 100V, VGS = 10V
tr Rise Time ––– 4.7 ––– ID = 5.8A
ns
td(off) Turn-Off Delay Time ––– 14 ––– RG=1.8Ω
tf Fall Time ––– 3.4 ––– See Fig.15
Ciss Input Capacitance ––– 1380 ––– VGS = 0V
Coss Output Capacitance ––– 100 ––– pF VDS = 50V
Crss Reverse Transfer Capacitance ––– 23 ––– ƒ = 1.0MHz

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 290 mJ
IAR Avalanche Current c ––– 5.8 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 5.8

(Body Diode) showing the
A G
ISM Pulsed Source Current integral reverse
c
––– ––– 47 S
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.8A, VGS = 0V e
trr Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = 5.8A, VDD = 100V
Qrr Reverse Recovery Charge ––– 355 530 nC di/dt = 500A/μs e
ton Forward Turn-On Time Time is dominated by parasitic Inductance

Thermal Resistance
Parameter Typ. Max. Units
RθJC (Bottom) Junction-to-Case ––– 1.2
RθJC (Top) Junction-to-Case f ––– 15 °C/W
RθJA Junction-to-Ambient g ––– 35
RθJA (<10s) Junction-to-Ambient g ––– 22

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100 1000
VGS VGS
TOP 10V TOP 10V
8.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V
7.5V 7.5V
10 7.0V 100 7.0V
6.8V 6.8V
6.5V 6.5V
6.3V 6.3V
BOTTOM 6.0V BOTTOM 6.0V

1 10

6.0V 6.0V
0.1 1

≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH

Tj = 25°C Tj = 150°C
0.01 0.1
0.1 1 10 100 0.1 1 10 100

VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5

RDS(on) , Drain-to-Source On Resistance

VDS = 50V
ID = 5.8A
≤ 60μs PULSE WIDTH
ID, Drain-to-Source Current (A)

VGS = 10V
2.0
10

(Normalized)
1.5
TJ = 150°C
1

TJ = 25°C 1.0

0.1
0.5

0.01
0.0
4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature

100000 16
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED ID= 5.8A
VGS, Gate-to-Source Voltage (V)

Crss = Cgd VDS = 160V

10000 Coss = Cds + Cgd 12 VDS = 100V
C, Capacitance (pF)

VDS = 40V

Ciss
1000 8

Coss
100
4

Crss

0
10
0 10 20 30
1 10 100 1000
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

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100 1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

TJ = 150°C
100
10

10
1msec
TJ = 25°C
10msec 100μsec
1
1
Tc = 25°C
Tj = 150°C
VGS = 0V Single Pulse
0.1 0.1
0.4 0.6 0.8 1.0 1 10 100 1000

VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

6 6.0
ID = 1.0A

VGS(th) Gate threshold Voltage (V)

5.5 ID = 1.0mA
ID = 250μA
ID , Drain Current (A)

5.0 ID = 100μA
4

4.5

4.0

2
3.5

3.0

0 2.5
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150

TC , CaseTemperature (°C) TJ , Temperature ( °C )

Fig 9. Maximum Drain Current Vs.

Fig 10. Threshold Voltage Vs. Temperature
Case (Top) Temperature
100

10
Thermal Response ( ZthJC )

D = 0.50
0.20
0.10
1
0.05
0.02
0.01
0.1

0.01
Notes:
SINGLE PULSE 1. Duty Factor D = t1/t2
( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Top)

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( Ω)

200 1200

EAS, Single Pulse Avalanche Energy (mJ)

RDS (on), Drain-to -Source On Resistance m

ID = 5.8A I D
1000 TOP 0.98A
1.4A
160 BOTTOM 5.8A
TJ = 125°C 800

120 600

400
80
TJ = 25°C 200

40
0
4 8 12 16 20
25 50 75 100 125 150
VGS, Gate-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)

Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current

V(BR)DSS
tp
15V

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
I AS
20V
tp 0.01Ω

Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms

RD
VDS VDS
90%
VGS
D.U.T.
RG
+
-VDD
10%
V10V
GS VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on) tr td(off) tf

Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms

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Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG V DD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

Id
Vds

Vgs

L
VCC
DUT
0
1K
S
Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform

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PQFN 5x6 Outline "B" Package Details

For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf

PQFN 5x6 Outline "B" Part Marking

INTERNATIONAL
RECTIFIER LOGO

DATE CODE

ASSEMBLY
XXXX PART NUMBER
(“4 or 5 digits”)

SITE CODE
(Per SCOP 200-002)
XYWWX MARKING CODE
(Per Marking Spec)

XXXXX
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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PQFN Tape and Reel

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Qualification information†
††
Indus trial
Qualification level †††
(per JE DE C JE S D47F guidelines )
MS L1
Moisture Sensitivity Level PQFN 5mm x 6mm †††
(per JE DE C J-S T D-020D )
RoHS compliant Yes

† Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 17.3mH, RG = 25Ω, IAS = 5.8A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
… When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.

Revision History
Date Comment
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
5/13/2014 • Updated Package outline on page 7.
• Updated data sheet based on corporate template.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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