BC261 BC262 BC263 PNP HIGH GAIN, LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR: Wer GENERAL DESCRIPTION MECHANICAL OUTLINE The BC261, BC262 and BC263 are PNP silicon planar epitaxial ae teansistors. ‘The BC261 is intended for audio amplifier driver stage. ‘The BC262 is intended for ! general purpose applications, ‘The BC263 is intended for low noise, high gain pre-amplifier stage. ABSOLUTE MAXINUM_ RATINGS Be261 30262 e263 Continuous Power Dissipation @ T,=25°C, P max 360n¥ 60a 3600" Continuous Collector Current, Ig max ~200mA -200mA 200mA Maximum Collector Junction Temperature, Tj 200°C 200°C 200°C Storage Temperature Range, Tst¢ 65 to +200°C -65 to +200°C -65 to +200°C lector-Base Voltage, Vogo “450 200 Vector-Emitter Voltages Vogo -45V -20V kmitter-Base Voltage, Vgpo ov -3v ELECTRICAL CHARACTERISTICS @ TA=25°C_(umless otherwise stated) BCze1 | BCae2 | BCIES 4 PARAMETER sypor, [wan wax [wry vax | urn wax |unrr | E97 CONDITIONS lcotTector Cutoft Current Topo =50 mA ~ lcoutector Cutoff Current | 1650 -50 uA 50°C lcotlector Cutoff Current —|I¢p0 -50 -50 | na lcouector Cutoff Current —_ | I¢R0 -50 -50 | uA limiter Cutoff Current Ippo -100 | -100] 100 | na lcortector-Emitter Seturation|Vop¢saty | ~250 -250] 250 | mv \ Voltage | lcotector-Emitter Saturation| Vog(saty | 600] 600} -600 | mv Voltage lbase-Emitter Saturation Veg (saty | 900] -900] — -900 | nv Voltage | .C. Current Gain hyp, 40 | Ismaili Signal Current Gain [hye 125 s00*| 125 sooy 125 500 frransition Frequency ty 150 150 so | Mz | ollector-Base Capacitance | Cob 6 6 | oF Noise Figure NF, 6 6 oB | es BW=200H2 ; Noise Figure NP. 2.5| ap | Vog=-5V—Ig=-0-: Rg=2Kohn f230Hz to 15KWz * When Group C is required, this gain limit becomes 900. FAX: 3.410321 \ 38 HUNG TO ROAD, KWUN TONG, HONG KONG. MICRO ELECTRONICS LTD.* CURRENT GAIN GROUPINGS BC261A ‘BC261B ‘BC2E1C GROUP BC262A BC262B BC262C BC2634 BC263B BC263C [PARAMETER MIN Max | won wax | Man max | TEST ConDrTToNs Bre 25260 | 240500 | ~450 900 | Vog=-5V __I,=~2mA f21KHz