NicolasPaulY.

Era

EE2B

ElectronicCircuit1–Experiment#1

CircuitDiagram

S.no Source(V) ForwardVoltage(V) ForwardCurrent(A)

1 0.1 4.33nA 100mV

2 0.2 55.03nA 199.94mV

A)ForwardBias

B)ReverseBias

Observation

A)ForwardBias
3 0.3 640.79nA 299.36mV
4 0.4 6.51μA 399.49mV

5 0.5 36.51μA 463.49mV

6 0.6 96.88μA 503.12mV

7 0.7 173.21μA 526.73mV

8 0.8 257.22μA 542.78mV

9 0.9 345.26μA 557.74mV

10 1 435.8μA 564.2mV

11 2 1.39mA 611.3mV

12 3 2.37mA 633mV

13 4 3.35mA 647.18mV

14 5 4.34mA 657.72mV

15 6 5.33mA 666.12mV

16 7 6.33mA 673.09mV

17 8 7.32mA 679.06mV

18 9 8.32mA 684.28mV

19 10 9.31mA 688.91mV

20 11 10.31mA 693.08mV

21 12 11.3mA 696.87mV

22 13 12.3mA 700.34mV

23 14 13.3mA 703.55mV

24 15 14.29mA 706.53mV

25 16 15.29mA 709.31mV

26 17 16.29mA 711.92mV

27 18 17.29mA 714.38mV

28 19 18.28mA 716.7mV
 29 20 19.28mA 718.9mV

30 21 20.28mA 720.99mV

31 22 21.28mA 722.99mV

32 23 22.28mA 724.89mV

33 24 23.27mA 726.71mV

34 25 24.27mA 728.46mV

35 26 25.27mA 730.14mV

36 27 26.27mA 731.76mV

37 28 27.27mA 733.32mV

38 29 28.27mA 734.82mV

39 30 29.26mA 736.27mV

B)ReverseBias
S.No Source ReverseVoltage(V) ReverseCurrent(A)

1 1V 1V 403.96pA

2 2V 2V 404.99pA

3 3V 3V 406pA

4 4V 4V 407.01pA

5 5V 5V 408.01pA

6 6V 6V 408.99pA

7 7V 7V 409.99pA

8 8V 8V 410.99pA

9 9V 9V 411.98pA

10 10V 10V 412.98pA

11 11V 11V 413.98pA

12 12V 12V 414.98pA

13 13V 13V 415.98pA

 14 14V 14V 416.98pA

15 15V 15V 417.97pA

16 16V 16V 418.97pA

17 17V 17V 419.97pA

18 18V 18V 420.97pA

19 19V 19V 421.97pA

20 20V 20V 422.97pA

21 21V 21V 423.96pA

22 22V 22V 424.96pA

23 23V 23V 425.96pA

24 24V 24V 426.96pA

25 25V 25V 427.96pA

26 26V 26V 428.96pA

27 27V 27V 429.95pA

28 28V 28V 430.95pA

29 29V 29V 431.95pA

30 30V 30V 432.95pA

Static and Dynamic Resistance

A)Forward Bias
S.NO STATICRESISTANCE DYNAMICRESISTANCE

1 23094688.22 21.74539

2 3633290.932 18.3298

3 467173.3329 14.93199

4 61365.5914 11.51247

5 12694.87812 9.334272

6 5193.2287 7.994686

7 3040.9907 7.203958

8 2110.1781 6.671429

9 1615.42033 6.17436

10 1294.6306 5.969637

11 439.7842 4.484033

12 267.0886 3.840461

13 193.1881 3.438441

14 151.5484 3.152087

15 124.9756 2.931467

16 106.3333 2.755342

17 92.7678 2.607566

18 82.2452 2.482808

19 73.9968 2.373935

20 67.2241 2.279156

21 61.6699 2.193764

22 56.9382 2.118514

23 52.8985 2.050125

24 49.4423 1.98664
 25 46.3905 1.92985

26 43.7029 1.877409

27 41.3175 1.828739

28 39.2068 1.782332

29 37.2873 1.740481

30 35.5518 1.701559

31 33.9751 1.66416

32 32.5355 1.630372

33 31.2295 1.595993

34 30.0148 1.56513

35 28.8935 1.536341

36 27.8553 1.508361

37 26.8911 1.482412

38 25.9929 1.464646

39 25.1818 -

B)ReverseBias
S.no StaticResistance(ohms) DynamicResistance(ohms)

1 2.475E+7 100.034E+10

2 4.938E+7 100.143E+10

3 7.389E+7 100.185E+10

4 9.828E+7 100.231E+10

5 1.225E+8 100.241E+10

6 1.467E+8 100.167E+10

7 1.707E+8 100.174E+10

8 1.947E+8 100.182E+10

9 2.185E+8 100.143E+10
 10 2.421E+8 100.15E+10

11 2.657E+8 100.158E+10

12 2.892E+8 100.167E+10

13 3.125E+8 100.176E+10

14 3.357E+8 100.187E+10

15 3.589E+8 100.134E+10

16 3.819E+8 100.143E+10

17 4.048E+8 100.154E+10

18 4.276E+8 100.167E+10

19 4.503E+8 100.182E+10

20 4.728E+8 100.2E+10

21 4.953E+8 100.111E+10

22 5.177E+8 100.125E+10

23 5.4E+8 100.143E+10

24 5.621E+8 100.167E+10

25 5.842E+8 100.2E+10

26 6.061E+8 100.251E+10

27 6.28E+8 100.0E+10

28 6.497E+8 100.0E+10

29 6.714E+88 100.0E+10

30 6.929E+8 -

VIVAQUESTIONS:

1.Definedepletionregionofadiode?

-DepletionRegionofaDiodeisaregioninasemiconductordevice,usuallyat thejunctureofP-
typeandN-typematerials,inwhichthereisneitheranexcess
ofelectronsnorofholes.Largedepletionregionsinhibitcurrentflow.Seealso
semiconductordiode.

2.Whatismeantbytransition&spacechargecapacitanceofadiode?
 -Thetransitioncapacitanceisalsoknownasdepletionregioncapacitance,
junctioncapacitanceorbarriercapacitance.Transitioncapacitanceis
denotedasCT.Thechangeofcapacitanceatthedepletionregioncanbe
definedas.thechangeinelectricchargeperchangeinvoltage.CT=dQ/dV

3.IstheV-IrelationshipofadiodeLinearorExponential?

- Exponential,asthevoltageisappliedthecharacteristicsofthediodeare non-
linearanditbehavesinanexponentialwaywithrespecttotheapplied
voltageandgeneratedcurrentinthecircuit.

4.Definecut-involtageofadiodeandspecifythevaluesforSiandGediodes?

-Cut-involtagealsoknownaskneevoltageisthevoltageatwhichthe
forwarddiodecurrentstartsincreasingrapidly.

-ThespecificvalueofSidiodeis0.65voltsandthevalueofaGediodeis
0.25

5.Whataretheapplicationsofap-ndiode?

ThefollowingaretheapplicationsofP-NJunctionDiode

-p-njunctiondiodecanbeusedasaphotodiodeasthediodeis
sensitivetothelightwhentheconfigurationofthediodeisreversebiased.

-Itcanbeusedasasolarcell.

-Whenthediodeisforward-biased,itcanbeusedinLEDlighting applications.

-
Itisusedasrectifiersinmanyelectriccircuitsandasavoltagecontrolledoscillatorinvar
actors.

6.DrawtheidealcharacteristicsofP-Njunctiondiode?
 7.Whatisthediodeequation? ID=IS [e -1]nkTd

qV

Where

IDiscurrentinamps ISissaturationcurrentinamps

eiseuler’sconstant qischargeofelectron

VDisvoltageappliedacrossadiodeinvolts

NisNonidealityorEmissioncoefficient kisBoltzmann’sconstant

Tisjunctiontemp.inkelvin

8.WhatisPIV?
 -PeakInverseVoltage(PIV)isthemaximumvalueofthereversevoltagethat
aPNjunctionordiodecanwithstandwithoutdamagingitselfisknownasits
PeakInverseVoltage.

9.Whatisthebreakdownvoltage?

-Breakdownvoltageisaparameterofadiodethatdefinesthelargestreverse
voltagethatcanbeappliedwithoutcausinganexponentialincreaseinthe
leakagecurrentinthediode.

10.WhatistheeffectoftemperatureonPNjunctiondiodes?

-theincreaseintemperatureduetoheatingdecreasesboththeforward
resistanceandreverseresistance,andincomparison,increasesthe
instantaneousdiodecurrent,whichmeansthatheatingchangestheentireV−I
characteristicsofap-njunctiondiode

11.Specificationsofdiodes

Thefollowingarethespecificationsofdiode:

-DiodeType

-ForwardVoltageDrop,Vf-the forwardvoltage istheamount of voltage

neededtogetcurrenttoflowacrossa diode

-PeakInverseVoltage,PIV-themaximumvoltageadiodeorotherdevice
canwithstandinthereverse-biaseddirectionbeforebreakdown

-ReverseBreakdownVoltage- thereverseanodevoltageatwhichthe
diodeconductsaspecifiedamountofreversecurrent

-MaximumForwardCurrent-thecurrentthatflowsintheforwarddirection
whenthediodeisforwardbiased isknownasaforwardcurrent

-JunctionOperatingTemperature-thehighestoperatingtemperatureof
theactualsemiconductorinanelectronicdevice.

-JunctionCapacitance-thecapacitancewhichformsinaPNjunction diodeunderreversebias

-LeakageCurrent-isthecurrentthatflowsthroughtheprotectiveground
conductortoground