JEE-Physics

UNIT # 02 (PART – III)

ELECTRONIC (SEMICONDUCTOR & LOGIC GATE)
EXERCISE –01 EXERCISE –02

Vin 5
17. I0 =  Iin =  R = 50 × = 250 mA 1.  diode is in F.B.
in 1  10 3
10R 10R
90 100 30V 30V
23. IC = 90% IE= I  IE = × IC = 11 mA A A
100 E 90
10R 10R  5R
IB = IE – IC = 11mA – 10 mA = 1mA
B B

ni
2
(1019 )2  5R 
VAB =  × 30 = 10V
25. nh = = = 1015 5R  10R 
ne 10 23
I 500 IL
V 0.1
27. E = = 6 =10 5 V/m I1
d 10 1k
2. 10V 5V

n 2i (10 19 )2
28. ne =   10 17 m 3 5V 10  5
nh 10 21 IL = = 5mA, I= = 10 mA
1k 500
I1 = I – IL =10 mA – 5mA = 5mA
3 1
29. I = = 20 mA 20
100

30
 0.98 5 5
32.  = = = 49 3. I= = A
1 1  0.98 20  30 50
20 5V
I C
34.  = I  IC =  IE = 0.95 × 100 mA = 95mA R0
E 24
5. Voltage gain= R = 6 × = 48
in 3

IC IE  IB 25  1 24 I C
35. = I = I = = 6.  = I  IC = IB = 49 × 5 µA = 245A
E E 25 25 B
IE = IB + IC = 5 + 245 = 250 A

49. Y = A  B = A.B = A.B = AND gate

VBC 0.5 V
7. R 0 = I = = 10 k
C 0.05mA
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72. R = 2hR = 2  240  6.4  10 6 = 55 km 100 100

13. IC = 90% IE  IE = × IC = × 20 = 22 mA
90 90
75. F C =9 N max =9 1011 =2 MHz IB = IE – IC = 22 – 20 = 2 mA

1 1
f2 (10  10 6 )2 14. = =
76. Nmax = c =  1.2 × 1012 m–3 en e  e 1.6  10 19  1013  1200
81 81 = 520.9 /cm
 5
83. R= 2R e h = 2 × 6400 × 10 3 × 500 m = 80 km 15.  = ene e  ne = e  = 19
e 1.6  10  5000
= 6.25 × 1015 cm–3

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 JEE-Physics

V  Vb (2  0.5 ) Y  A.A  A.B  B.A  B.B

16. I=  5 × 10–3 =  R = 300 
R R Y  A.B  A.B
when A = 1, B = 0
12400(eV  Å ) 12400 then Y = 1.0  1.0 = 0.0 + 1.1 = 1
17. E =   = = 16500 Å
 (Å ) 0.75 when A = 1, B = 1
then Y = 1.0  1.1 = 0.1 + 1.0 = 0+0=0
V0 RL when A = 0, B = 0
20. Vin =  R in then Y = 0.0  0.0 = 1.0 + 0.1 = 0+0=0

RL 10k 
 V0 =  R × Vin= 100 × × 1mV = 1V EXERCISE –04
in 1k 
VEB 7  h fe   50 
21. Rb = 9. AC = –  1  h R  = –  3 
I B = 35  10 6 = 200 k oe L 1  25  10 6
 (10 ) 
= – 48.78
VCC  VCE 10  5 12400(eV  Å ) 12400
22. IC = RC = = 5 mA 12. Energy band= = =0.5 eV
1k   (Å ) 24800
IC IC 5.488  10 3
VCC = I BRB = R
 B 15.  = I = = 49
B (5.6  5.488)  10 3
.VCC 100  10
 RB    200 k  I
IC 5mA 17. I = neAvd  vd 
n
24.  = ene(e + h) I1 n2 7
vd 5 5
= 1.6 × 10 –19 × 1.072 × 10 10 (1350 + 480) 1
=I × n = × =
= 3.14 × 10 –6 mho/cm vd 2 1 4 7 4
2

31. Y = (A+B).A = A.A + AB = A+A.B = A(1+B) = A 12

18. I = =2A
4 2
33. Y = (W + X)·(W + Y) = W.W + W.X + W.Y + X.Y
1
= W + W.X + W.Y + X.Y 32. For how pass filter, frequency greater than can't
= W(1+X+Y)+X.Y=W+X.Y C
pass through filter
34. Y = (A + B) . ( A.B ) = (A + B) . ( A  B ) 1 1
 f <  f < = 4 × 10 4 Hz = 40 KHz
C RC
= A. A + B. A + A. B + B. B
in given options maximum frequency below
= A. B + B. A = XOR gate 40 KHz is 10.62 KHz

43. Y = ( A + B).A = A. A + AB = AND gate 33. LED is use in forward bias so I–V graph is to increase
frequency of light emitted from LED; potential
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barriar to diode is increased so

A
A.P=Q
P
A A.B=P Q
A Y=Q.R
49. B B R
P
P.B=R
B

Here Y  Q.R  Q  R  A.P.  P.B

Y = P.(A + B) =  A.B  ·(A+B)

Y =  A  B  ·(A + B)

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