50RIA Series

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 50 A
FEATURES
• High current rating
RoHS
• Excellent dynamic characteristics COMPLIANT

• dV/dt = 1000 V/µs option

• Superior surge capabilities

• Standard package

• Metric threads version available

TO-208AC (TO-65) • Types up to 1200 V VDRM/VRRM

• RoHS compliant

TYPICAL APPLICATIONS
• Phase control applications in converters
PRODUCT SUMMARY • Lighting circuits
IT(AV) 50 A
• Battery charges

• Regulated power supplies and temperature and speed

control circuit

• Can be supplied to meet stringent military, aerospace and

other high reliability requirements

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
50 A
IT(AV)
TC 94 °C
IT(RMS) 80 A
50 Hz 1430
ITSM A
60 Hz 1490
50 Hz 10.18
I2 t kA2s
60 Hz 9.30
VDRM/VRRM 100 to 1200 V
tq Typical 110 µs
TJ - 40 to 125 °C

Document Number: 93711 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 19-Sep-08 1
50RIA Series
Vishay High Power Products Medium Power Thyristors
(Stud Version), 50 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM
VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM
VOLTAGE REPETITIVE PEAK AND
TYPE NUMBER PEAK VOLTAGE (2) AT TJ = TJ MAXIMUM
CODE OFF-STATE VOLTAGE (1)
V mA
V
10 100 150
20 200 300
40 400 500
50RIA 60 600 700 15
80 800 900
100 1000 1100
120 1200 1300
Notes
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
(2) For voltage pulses with t ≤ 5 ms
p

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current 50 A
IT(AV) 180° sinusoidal conduction
at case temperature 94 °C
Maximum RMS on-state current IT(RMS) 80 A
t = 10 ms No voltage 1430
Maximum peak, one-cycle t = 8.3 ms reapplied 1490
ITSM A
non-repetitive surge current t = 10 ms 100 % VRRM 1200
t = 8.3 ms reapplied Sinusoidal half wave, 1255
t = 10 ms No voltage initial TJ = TJ maximum 10.18
t = 8.3 ms reapplied 9.30
Maximum I2t for fusing I2 t kA2s
t = 10 ms 100 % VRRM 7.20
t = 8.3 ms reapplied 6.56
t = 0.1 to 10 ms, no voltage reapplied,
Maximum I2√t for fusing I2√t 101.8 kA2√s
TJ = TJ maximum
Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.94
V
High level value of threshold voltage VT(TO)2 (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum 1.08
Low level value of on-state
rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 4.08
slope resistance
mΩ
High level value of on-state
rt2 (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum 3.34
slope resistance
Maximum on-state voltage VTM Ipk = 157 A, TJ = 25 °C 1.60 V
TJ = 25 °C, anode supply 22 V, resistive load,
Maximum holding current IH 200
initial IT = 2 A mA
Latching current IL Anode supply 6 V, resistive load 400

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2 Revision: 19-Sep-08
 50RIA Series
Medium Power Thyristors Vishay High Power Products
(Stud Version), 50 A

SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum rate of VDRM ≤ 600 V TC = 125 °C, VDM = Rated VDRM, 200
dI/dt Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum A/µs
rise of turned-on current VDRM ≤ 1600 V 100
ITM = (2 x rated dI/dt) A
TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit
Typical delay time td 0.9
Gate pulse = 10 V, 15 Ω source, tp = 20 µs
µs
TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/µs
Typical turn-off time tq 110
dIr/dt = - 10 A/µs, VR = 50 V

BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of TJ = TJ maximum linear to 100 % rated VDRM 200
dV/dt V/µs
off-state voltage TJ = TJ maximum linear to 67 % rated VDRM 500 (1)
Note
(1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90

TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10
W
Maximum average gate power PG(AV) 2.5
Maximum peak positive gate current IGM 2.5 A
Maximum peak positive gate voltage +VGM 20
V
Maximum peak negative gate voltage -VGM 10
TJ = - 40 °C 250
DC gate current required to trigger IGT TJ = 25 °C Maximum required gate trigger 100 mA
current/voltage are the lowest
TJ = 125 °C 50
value which will trigger all units 6 V
TJ = - 40 °C anode to cathode applied 3.5
DC gate voltage required to trigger VGT V
TJ = 25 °C 2.5
TJ = TJ maximum, Maximum gate current/voltage not
DC gate current not to trigger IGD 5.0 mA
VDRM = Rated voltage to trigger is the maximum value
which will not trigger any unit with
DC gate voltage not to trigger VGD TJ = TJ maximum rated VDRM anode to cathode 0.2 V
applied

Document Number: 93711 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 19-Sep-08 3
50RIA Series
Vishay High Power Products Medium Power Thyristors
(Stud Version), 50 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction and
TJ, TStg - 40 to 125 °C
storage temperature range
Maximum thermal resistance,
RthJC DC operation 0.35
junction to case
K/W
Maximum thermal resistance,
RthCS Mounting surface, smooth, flat and greased 0.25
case to heatsink
3.4 + 0 - 10 %
Non-lubricated threads
(30) N·m
Allowable mounting torque
2.3 + 0 - 10 % (lbf · in)
Lubricated threads
(20)
28 g
Approximate weight
1.0 oz.
Case style See dimensions - link at the end of datasheet TO-208AC (TO-65)

ΔRthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.078 0.057
120° 0.094 0.098
90° 0.120 0.130 TJ = TJ maximum K/W
60° 0.176 0.183
30° 0.294 0.296
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

130 130
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)

50RIA Series 50RIA Series

RthJC (DC) = 0.35 K/W RthJC (DC) = 0.35 K/W
120
120

Conduction Angle 110

Conduction Period
110

30° 100
60°
90°
100 120°
90 90°
180° 60° 120°
30° 180° DC
90 80
0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80

Average On-state Current (A) Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

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4 Revision: 19-Sep-08
 50RIA Series
Medium Power Thyristors Vishay High Power Products
(Stud Version), 50 A

80 1300
Maximum Average On-state Power Loss (W)

180° At Any Rated Load Condition And With

Peak Half Sine Wave On-state Current (A)

Rated V RRM Applied Following Surge.
70 120°
1200 Initial TJ = 125°C
90°
60° @ 60 Hz 0.0083 s
60
30° 1100 @ 50 Hz 0.0100 s
50
RMS Limit 1000
40
900
30
Conduction Angle
800
20
50RIA Series
TJ = 125°C 700
10 50RIA Series

0 600
0 10 20 30 40 50 1 10 100
Average On-state Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 3 - On-State Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current

100 1500
Maximum Average On-state Power Loss (W)

DC Maximum Non Repetitive Surge Current

Peak Half Sine Wave On-state Current (A)

90 180° 1400 Versus Pulse Train Duration. Control
120° Of Conduction May Not Be Maintained.
80 1300 Initial TJ = 125°C
90°
70 60° 1200 No Voltage Reapplied
30° Rated VRRM Reapplied
60 1100
50 1000
RMS Limit
40 900
30 Conduction Period
800
20 50RIA Series 700
TJ = 125°C 50RIA Series
10 600
0 500
0 10 20 30 40 50 60 70 80 0.01 0.1 1
Average On-state Current (A) Pulse Train Duration (s)

Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current

1000
Instantaneous On-state Current (A)

100

TJ = 25°C
TJ = 125°C
10

50RIA Series
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Instantaneous On-state Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

Document Number: 93711 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 19-Sep-08 5
50RIA Series
Vishay High Power Products Medium Power Thyristors
(Stud Version), 50 A

Transient Thermal Impedance ZthJ-hs (K/W)

Steady State Value
RthJ-hs = 0.35 K/W

0.1

50RIA Series

0.01
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics

100
Rectangular gate pulse (1) PGM = 10W, tp = 5ms
a) Recommended load line for (2) PGM = 20W, tp = 2.5ms
Instantaneous Gate Voltage (V)

rated di/dt : 20V, 30 ohms; tr<=0.5 µs (3) PGM = 50W, tp = 1ms

b) Recommended load line for (4) PGM = 100W, tp = 500µs
<=30% rated di/dt : 20V, 65 ohms
10 tr<=1 µs
(b) (a)
Tj=-40 °C
Tj=25 °C
Tj=125 °C

1
(1) (2) (3) (4)

VGD
IGD 50RIA Series Frequency Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100 1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics

ORDERING INFORMATION TABLE

Device code 50 RIA 120 S90 M

1 2 3 4 5

1 - Current code
2 - Essential part number
3 - Voltage code x 10 = VRRM (see Voltage Ratings table)
4 - Critical dV/dt:
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
5 - None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M = Stud base TO-208AC (TO-65) M6 x 1

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95334

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93711

6 Revision: 19-Sep-08
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Revision: 18-Jul-08 1