“ewre troael Ot photodetector and its equivalent cireut Quantum or Shot Noise (|,) * The noise generated due to statistical nature of production and collection of photo electrons, when optical signal is incident on photodetector. (13) = 62, = 2q1p BM? FM) here, Ip is primary photocurrent B is BW of photodetector Mis avalanche multiplication factor F(M) is noise figure. * The total shot noise my Dark Current Noise , jas circuit when no light * The current flows through bias circuit w! ie. Teves wean”. An up thrust for know «cident on diode is callested electrons 1) Bulk dark current (IpB) ; ue to thermally gene and holy The bulk dark curren jode. ee rhe ean suse of blk cent # . 2 F(M) (iq) = be =2410 M ( k current. Ip is primary (unmultiplied) detector bulk dar! il) Surface leakage current (Ips) ‘The surface leakage dark current 16 voltage and surface area- eee . ‘The mean square value of surface dark current 8 y (1s) = 02,=2qI, B where, I1, is surface leakage current. q is charge on electron. ‘Total Photodetector Noise Current (iQ) «Total mean square photo detector noise current (i) is given as - ‘3 2 2 \- 2 2 2 (i) = 03, =(12,)+ (Ibs) (Ibs) = 9 +05, +55 (i%) = 24(p+Ip)M? F(M)B+2q1 B due to surface defects, cleanliness, ie Thermal Noise / Amplifier Noise (I) © The photodetector load resistor gives thermal noise. The thermal noise 8 Gaussian in nature. a it == B ( ) a Ri where, Kg is Boltzmann's constant T is absolute temperature B is electrical BW of system,gnu 7 and Networks a7 Ratio (SNR) rman coon ratio at the input of amplifier ‘ee se Input en ap - Se PUl signal 1 noise due to quantum Tran N Tota Quantum, bulk, dark currency current (i) se aan _ = N 2q(p+lp)M? FM) B+2q1, Beak, 1B GR A silicon v-i-n vhotodinds in...SFA Response Time « Factors that determine the response time of a photodetector are : 1 Transit time of photocarriers within depletion region. TECHNICAL PUBLICATIONS” - An up thrust for knowiedge3-74 Fiber Oy v eaten 2. Diffusion time of photo carriers ou! ide the deplection region, 3 RC time constant of diode and external circuit, Transit Time The response speed of a photodiode is mainly decided by the time photo generated carriers to travel across the depletion region. taken bg . The time required by photo generated charge carrier to traye) depletion is called as transit time. The thicker the detector active area ae & transit time. 5 * The transit time of photo carrier is defined as the ratio cartier drift vq 5 4 . ; and depletion layer width (W). a) aa EREEE] Diffusion Time a . ae . high field region, the diffusion times are less than carrier drift time * The response time of a photo diode i P . detector output. PI le is described by rise time and fall-time oft ormoe jg combination input resis ne of photodiode of load and amplifier Cr is sum of PI and amplifier capacitance. 100 % Output 50 % Fast carrier response Fig. 3.13.3 ¥aimum bandwidth + The maximum 3 dB bandwidth for a photodiode can be determined by - j os Bm * oeW where, Vq is carrier velocity Wis depletion layer width * The maximum response time of the P! otodiode can be obtained as : ~~ cece mance = ao |Fiber Optical Sources ang y pecs Communication ana notwrks 978 sate | rodiode and resistance (R) of the Toad form uy. ESEESY Rc Time Constant ‘The capacitance (C) of the pho! must be kept small to prevent the RC tng time constant. © The capacitance of the photodetectot constant from limiting the response time. Trade-offs between fast transit time and low capacitance are necessary for se; response.