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Unit 3
Unit 3
Fig 1.
Figure 2
VOH (min) represents the minimum high voltage for logic 1 and VOL(max)
represents the highest low voltage for logic 0. The output should not go into
the forbidden range. Similarly, VIH (min) is the lowest high input voltage and
VIL (max) is the highest low input voltage, and the voltage level between VIH
(min) and VIL (max) is the uncertain range, which should not be supplied to
the logic gate's inputs.
The noise margin for the high state (VNH) and the noise margin for the low
state (VNL) are calculated as follows:
VNH = VOH (min) – VIH (min)
VNL = VOL (max) – VIL (max)
It is always preferable to have a high noise margin.
Resistor – Transistor Logic (RTL)
The most common type of logic circuit is the resistor–transistor logic. It's
called resistor transistor logic since it's made up of resistors and transistors.
The basic circuit for two - input RTL NOR gates are shown in Figure 3. This
circuit's operation can be stated as follows:
When both A and B are set to logic 0, the two transistors T1 and T2 are cutoff,
and no current flows through the transistors' collector emitter circuits. The
output will, therefore, be high (logic 1). When either of the two inputs is at
logic 1, the corresponding transistor will go into saturation and output will be
VCE, Sat of the transistor ( 2.0 ≈ V). The output is said to be logic 0 in nature.
If both inputs are at logic 0, the output will be low as both transistors will
saturate. It is concluded that it accomplishes the NOR gate's function.
Despite the fact that this is the simplest logic circuit, it has become obsolete.
RTL has the benefit of having low power dissipation per gate. This family's
shortcomings include a poor noise margin and a considerably longer
propagation delay.
Fig. 3
Direct Coupled Transistor Logic (DCTL):
The direct coupled transistor logic circuit is similar to RTL, only it doesn't
have the base resistances. Figure 4 shows the DCTL circuit for a two-input
NOR gate. When one or both inputs are high (logic1), the matching transistor
or transistors will conduct, and current will flow through the resistance R,
resulting in a low output (logic 0).
When both inputs are low, however, it correlates to a high output voltage. This
logic is straightforward and only requires a few components, however it
suffers from a low noise margin.
Fig.4
Integrated Injection Logic (IIL or I2L): The simplest logic family, this
family of bipolar transistors has a high packing density, allowing a large
number of digital functions to be built on a single chip. Individual gates in the
SSI package are not available because the I2L family is available in the LSI
package for complicated digital functions such as microprocessors.
Figure 5 shows the logic diagram of three - input I2L NOR gate. The inverter,
which is depicted in the shaded box, is the circuit's fundamental component.
The PNP transistor T1 acts as a constant current source, injecting current into
the transistor T4's base. When the input is set to logic 0 (grounded), the
injected current is grounded, directing the current away from transistor T4's
base. As a result, this transistor enters cutoff, and the output is high. When the
inverter's input A is high, the injected current from the current source flows
into the base of the transistor T4, causing it to switch on. The output is low.
The circuit for three - input NOR gate is the combination of three inverters
and its operation may be explained in the similar fashion.
It has a low power requirement and reasonably good switching speeds.
Fig. 5
Diode – Transistor Logic (DTL)
After RTL, diode transistor logic (DTL) came next, with a high noise margin
but sluggish speed. The name diode transistor logic comes from the use of
diodes and transistors in DTL. The positive logic two input DTL NAND gate
is shown in Figure 6. The following is an explanation of how it works:
When both inputs are set to logic 0, the diodes D1 and D2 are in forward bias,
and the voltage at point P is equal to the diode's forward voltage drop of 7.0.≈
V). Through the diode D3, this voltage is delivered to the base of the transistor
T1, causing the transistor T1 to cutoff. As a result, the output voltage will be
high (logic1). The transistor T1 is ensured to be in cutoff by the diode D3. The
transistor may be in the active zone without this diode, and the output would
be insufficient. When one of the two inputs is set to logic 1, the associated
diode is reverse biased, while the other diode is forward biased, resulting in a
voltage at point P equal to the diode's forward voltage. This causes the
transistor T1 to cutoff, resulting in a high output voltage (logic 1). When both
inputs are set to logic 1, the diodes D1 and D2 will be in reverse bias, and the
voltage at point P will be high, causing the transistor T1 to become saturated.
The transistor's output will be VCE, Sat (2.0 V). The output is said to be logic
0 in nature.
When the transistor T1 is shut off from its saturated state, the resistance R2
connected between the transistor's base and ground removes the accumulated
base charge. The lower the value of this resistance, the shorter the gate's
propagation delay; however, the value of this resistance cannot be reduced
below a particular level, or the transistor T1 will never be saturated.
Fig. 6
Fig. 7
When the emitter of transistor T1 is at 7.5 V, the transistor T2 will conduct,
as the sum of the 6.9 V zener voltage and T2's VBE (0.6 V). The HTL gate's
low output level will be 0.2 V, and the high level will be around 15 V. When
one or both of the inputs are low, transistor T2 is turned off.
Transistor T2 saturates when both inputs are high.
The advantage of this gate is that it has a high noise margin, but it is slow.
Transistor – Transistor Logic (TTL)
TTL logic is the most extensively used IC technology and is the most popular
of all logic families. It's a truncated version of DTL. In TTL, the propagation
delay time is shortened by replacing diodes with multi-emitter transistors. The
schematic diagram of a basic TTL positive logic NAND gate is shown in
Figure 8. It is made up of a T1 multi-emitter transistor. As demonstrated in
Figure 9, a two emitter transistor is comparable to two transistors with a
common base and common collector.
The following is a description of how the TTL NAND gate works:
When one or both of the inputs A are at logic 0, the multi-emitter transistor's
emitter base junction is in forward bias, and base current is supplied by the
resistor R1. The transistor T1 saturates, and the voltage at the point equals the
transistor's VCE, Sat (2.0 V). The transistor T2 will be cutoff, resulting in a
high output voltage (logic 1).
Fig. 8 Fig. 9
When both inputs are set to logic 1 (+5 V), the emitter base junctions of
transistor T1 are reverse biased, and current flows via R1 and into the base of
transistor T2 via the forward biased base collector junction of transistor T1.
The transistor is considered to be inverted in this mode because the collector
of transistor T1 acts as an emitter and the emitter acts as a collector. The
voltage at point P will be enough to push the transistor T2 into saturation,
resulting in an output voltage of VCE,Sat (2.0 ˜͌ V) or logic 0.
This gate has a shorter propagation delay than a DTL NAND gate because
when the transistor T2 transitions from saturation to cutoff, the transistor T1
saturates and offers a low impedance path to ground. As a result, the transistor
T2's stored base charge is promptly released, lowering the propagation delay
time.
When the transistor T2 saturates or the output is low, the output resistance of
the basic TTL circuit (fig. 8) is low (logic 0). When the transistor is in cutoff
or the output is high, however, the output resistance of this circuit is nearly
equal to the resistance R. (logic 1). This will limit the fan's ability to get out of
the gate. The power dissipation in R and the gate would increase if the resistor
R was reduced. It would also be difficult to saturate the transistor T2 with a
lower R value. TTL gate with totem pole layout is utilized to overcome this
challenge.
TTL NAND Gate with Totem-pole Output
The standard form of a TTL circuit with an input NAND gate is shown in
Figure below. The following is how the circuit works:
The transistor T2 enters cutoff mode when either or both inputs are low (logic
0). Because the voltage drop across the resistor R3 is practically zero, the
transistor T4 will also be in cutoff. T3 is now conducting and acting as an
emitter follower. This transistor's emitter output voltage will be equal to the
collector voltage of the transistor T2, which is quite high (logic1). The emitter
follower, on the other hand, gives a low output resistance to the driven gate's
input.
Transistor T2 conducts and operates as an emitter follower when both inputs
are high (or at logic 1). The voltage across R3 will be enough to drive the
transistor T4 to saturation. Because the transistor T4 saturates, the output
voltage will, therefore, be equal to VCE, Sat ( 2.0 ≈ V) or logic 0. The low
output impedance is due to the fact that this output is taken at the collector of
the transistor T4, which is in saturation. When the transistor T4 saturates, the
diode D stops the transistor T3 from conducting. T4 has a potential of
approximately 0.8 V (VBE,Sat) across the emitter base junction, and T2 has a
collector emitter voltage of 0.2 V. (VCE,Sat). This means that the base of
transistor T3 receives a total of 1.0 V. This voltage would be sufficient for the
transistor T3 to conduct in the absence of the diode D. The diode D, on the
other hand, lowers the base emitter voltage of transistor T3 below 0.7 V,
which is required for transistor conduction. When T4 saturates, the diode D
drives the transistor T3 into cutoff.
When negative voltage spikes arise at the inputs, diodes D1 and D2 safeguard
the transistor T1 from damage. The diodes conduct and the spikes are
grounded when negative spikes emerge at the input terminals. The totem pole
output is formed by the transistors T3 and T4 and the diode D, which gives
low output impedance in all cases. TTL gates are faster, with a propagation
time of around 15 nanoseconds.
TTL Inverter
A TTL circuit for an inverter is shown in Figure 11. The operation principle is
the same as for the TTL NAND gate, with the exception that it only has one
input. As a result, if input A is logic 0, output will be high (logic 1), and if
input is logic 1, output will be low (logic 1). (logic 0). The totem-pole output
is also included in this circuit.
Fig. 11
Fig. 12
TTL AND Gate
A TTL two-input AND gate is shown in Figure 13. The AND function is
achieved by adding an extra inversion circuit before the TTL NAND gate's
totem output. The AND gate is created by converting the NAND gate to an
AND gate. The transistors T2 and T3 make up the extra inversion circuit.
Fig. 13
TTL OR Gate
As shown in figure 14, the TTL OR gate is made by putting a common
emitter circuit before the TTL NOR gate's totem pole output. The inversion
provided by the common emitter circuit changes the NOR gate to an OR gate.
The common emitter circuit is made up of the transistor T5 and its
accompanying components.
Fig 14
Fig. 15 Fig. 16
The open collector gates have the advantage of being able to link their outputs
together and connect them to a common pull-up resistor, removing the
requirement for an AND gate. As seen in figure 17, this can be shown by
connecting the open collectors of three NAND gates with a pull-up resistor R.
Figure 18 shows the equivalent circuit, in which the outputs of three NAND
gates (open collector) are linked to a pull-up resistor R.
Fig. 17 Fig. 18
The output voltage is brought down to a low value when any or all transistors
are saturated. The pull up resistor R, on the other hand, pulls the output
voltage to a high value if all the transistors are in cutoff. As a result, the
ANDing of the outputs is produced.
There are three gates. Wiring the outputs of open collector devices to a
common pull-up resistor to get the ANDing action is known as wire –AND.
With this strategy, any number of gates can be ANDed together. The output of
circuit shown in figure 18 is given by:
With TTL devices with totem pole outputs, the wire – AND is not possible.
When the outputs of two or more of these devices are coupled together and
one is low and the other is high, the final output is shorted, resulting in
excessive power dissipation. As a result, a separate AND gate is required to
AND the outputs of TTL devices.
The slow pace of open-collector gates is their principal problem.
When the ENABLE E terminal is set to high (logic 1), the diode D1 remains in
reverse bias, having no influence on the operation of transistors T3 and T4. As
a result, the circuit functions as a regular inverter. When the ENABLE E
terminal is low (logic 0), the diode D1 is in forward bias and drains the
transistor T3's base current. As a result, this transistor will be disabled. The
forward bias diode D1 also forward biases the transistor T1's emitter base
junction, which switches off transistor T2, which then turns off transistor T4.
When logic 0 is applied to the ENABLE E terminal, both the transistors T3
and T4 of the totem pole output are shutdown.
Other gates, as well as equivalent circuits, can be configured in a tri-state
design. The advantage of this setup is that wire –ANDing of tri-state IC
outputs is conceivable, and it is also quick.
More TTL Circuits: TTL circuits are divided into three groups:
High Speed TTL circuits
Medium Speed TTL Circuits Slow Speed TTL Circuits
Figure 21 shows the TTL NAND gate circuit with three values for each
resistor R1, R2, R3, and R4 for each of the three families. Low resistance
values are used for high speed, however the power dissipation is higher since
low resistance values take a lot of current from the supply. TTL gates in the
54H/74H family are available and designed for high speed. The letter H stands
for high speed. The typical propagation delay and power consumption for a
high-speed gate are 6 nsec and 22 mW, respectively. These resistances have
medium levels for medium speed. For medium-speed TTL gates, the 54/74
series is available. This is the standard series, with a propagation delay of 10
nanoseconds and a power usage of 10 milliwatts. The resistances utilized in
slow speed TTL gates are high, and the series available for slow speed is
54L/74L. Slow speed gates have a propagation delay of 33 nsec and a power
usage of 1 mW. The 54 series is the 74 series' counterpart, and the two are
interchangeable. The 54 series is mostly employed in the military since it can
work over a greater temperature range and voltage range.
Fig. 21
The operation speed of Schottky TTL circuits is substantially faster than that
of high-speed TTL circuits. When transistors in TTL circuits go from
saturation to cutoff, they take a particular amount of time. This reduces the
time it takes for the gates to propagate. This latency can be minimized by
using Schottky transistors instead of transistors in TTL circuits. As shown in
Figure 22, a Schottky transistor is created by connecting a Schottky barrier
diode between the base and collector of a transistor. The circuit diagram of a
two-input Schottky TTL NAND gate is shown in Figure 23. It's worth noting
that the transistor T4 is a standard transistor.
Schottky Transistor – Transistor Logic (STTL) gates are available in the
54S/74S series. This logic family consumes less power than the 54H/74H
series and has a speed that is twice that of the 54/74 series. Schottky TTL in
the 54LS/74LS family is still accessible at low power. The resistances utilized
in the 54S/74S series were increased to create this series. As a result, the
switching speed of this logic gate family is the same as that of the normal TTL
family (54/74), and the power dissipation is one-fifth that of the 54/74 series.
Fig. 26
MOS Logic
Bipolar transistors were used in all of the logic families previously covered.
Their comparisons were done with respect to particular logic family
parameters. Another unipolar logic family, such as the Metal Oxide
Semiconductor Field Effect Transistor (MOS FET), will now be described.
The MOS logic family is the simplest to manufacture and takes up the least
amount of space. It just requires N channel MOS or P channel MOS field
effect transistors, as well as no extra resistors, diodes, or other components.
High packing density, low power dissipation, and high fan-out characterize
this logic family. NMOS (enhancement type N channel MOS FETs) or PMOS
(enhancement type P channel MOS FETs) logic circuits can be used. The
following properties of MOS FETs can be seen from their operations. When
the gate is at a positive potential with respect to the source, the NMOS
operates, while the PMOS operates when the gate is at a negative potential
with respect to the source. Neither of the two MOS FETs will conduct if the
gate is at zero voltage.
MOS inverter
Figure 27 depicts the circuit diagram for an NMOS inverter, while figure 28
depicts the circuit diagram for a PMOS inverter. The circuits all operate in the
same way. Because T1 is conducting while the gate is linked to the drain in
both circuits, it acts as a resistor.
Fig. 26 Fig. 27
When input A is set to logic 0 (ground potential), the MOS FET T2 is turned
off, resulting in a high voltage at the output (see figure 26). As a result, the
outcome is logic 1. When input A is set to logic 1 (VDD potential), the MOS
FET T2 is turned on, and the output is set to logic 0. This ensures that the
inverter is working properly. The operation of PMOS will be presented in the
same way, with the exception that it operates on negative logic.
Fig. 28 Fig. 29
Fig. 30 Fig. 31
CMOS Inverter
Figure 32 depicts the circuit diagram of a CMOS inverter, which consists of a
complementary mode connection between a PMOS transistor T1 and an
NMOS transistor T2. Both transistors' drains are connected together, and the
output is obtained this way. The positive supply is connected to the source
terminal of the PMOS transistor T1, whereas the source of the NMOS
transistor T2 is grounded.
The gate of PMOS transistor T1 is at a negative potential with respect to its
source when the input A is grounded (logic 0), hence it is ON. T2 is turned off
because the gate of the NMOS transistor is at ground voltage. As a result, the
output is high (+VDD), logic 1.
When input A is high (logic 1), the gate of PMOS transistor T1 is at zero
potential with respect to its source, and the transistor is turned off. T2 is ON
because the gate of the NMOS transistor is at a positive potential with respect
to ground. As a result, the output is low logic 0.
Fig. 32
CMOS NAND Gate
Figure 33 depicts the CMOS NAND gate circuit diagram. Two PMOS
transistors T1 and T2 are connected in series with their sources connected
together, while two NMOS transistors T3 and T4 are connected in parallel
with their sources connected together.
The gates of T1 and T2 are at negative potentials with respect to their sources
when both inputs are at logic 0 (grounded); the gates of T3 and T4 are at zero
potential. T1 and T2 are both PMOS transistors, while T3 and T4 are NMOS
transistors. As a result, the output will be high (logic 1).
When input A is logic 0 (grounded) and input B is logic 1, the gate of T1 is at
negative potential in relation to its source, and the gate of T2 is zero; the gates
of T4 and T3 are at zero and VDD potential, respectively. T1 and T3 are
turned on, but T2 and T4 are turned off. As a result, the output will be high
(logic 1).
Fig. 33
T1 and T3 will be off and T2 and T4 will be ON when input A is logic 1 and
input B is logic 0 (grounded). As a result, the output will be high (logic 1).
The gates of T1 and T2 are at zero potential with respect to their sources when
both inputs are at logic 1 (+VDD); the gates of T3 and T4 are at negative
potentials with respect to their sources when both inputs are at logic 1
(+VDD). As a result, both PMOS transistors (T1 and T2) are turned off, while
NMOS transistors (T3 and T4) are switched on. As a result, the output will be
grounded (logic0).
CMOS NOR Gate
Figure 34 shows a circuit diagram for a CMOS NOR gate. T1 and T2 are two
PMOS transistors connected in series, and T3 and T4 are two NMOS
transistors connected in parallel.
The gates of T1 and T2 are at negative potentials when both inputs are at logic
0 (grounded); the gates of T3 and T4 are at zero potential. T1 and T2 are both
PMOS transistors, while T3 and T4 are NMOS transistors. As a result, the
output will be high (logic 1).
When input A is logic 0 (grounded) and input B is logic 1, T1's gate is at
negative potential with regard to its source, and T2's gate is zero; T3 and T4's
gates are at zero and VDD potential, respectively. T1 and T3 are turned on,
but T2 and T4 are turned off. As a result, the output will be low (logic 0).
T1 and T3 will be off and T2 and T4 will be ON when input A is logic 1 and
input B is logic 0 (grounded). There will be a low production (logic 0).
The gates of T1 and T2 are at zero potential when both inputs are at logic 1
(+VDD), whereas the gates of T3 and T4 are at VDD potential. As a result,
both PMOS transistors (T1 and T2) are turned off, while NMOS transistors
(T3 and T4) are switched on. As a result, the output will be grounded (logic0).
Fig. 34
Due to their less flexible internal architecture than FPGAs, CPLDs have
predictable temporal characteristics. As a result, they are best suited for
critical control applications and other applications requiring a high level of
performance or complex processes. CPLDs also form a class of perfect
solution gadgets for battery-operated portable applications due to their
significantly lower power consumption and lower cost. As a result, they're
often found in electronic devices such as cell phones and personal digital
assistants.
Programmable ROMs
Memory is nothing more than a data storage device. A Read Only Memory
(ROM) is a type of memory that can only hold a specific set of binary data or
instructions. Depending on the type of fusible link used to store any user-
specified binary information in the device, specific links in the ROM can be
made or broken.
The underlying logic diagram of an unprogrammed 42 PROM using a fuse and
an antifuse to produce output-1 = AB is shown in the graphic above. An
unprogrammed interconnection is a ‘make' connection in the case of a fuse,
but a 'break' connection in the case of an antifuse. Once a pattern is
established, it does not change even if the power is turned on and off. In the
case of PROMs, the user can wipe the data from the ROM chip and replace it
with new data.
In general, a PROM with n input lines and m output lines is referred to as a
2n×m PROM. When you look at the inside of a PROM device, you'll notice
that it's a combinational circuit with AND gates connected as a decoder and
OR gates equivalent to the number of outputs. For example, a PROM with five
input lines and four output lines would have the equivalent of a 5×32 decoder
at the input, generating 32 different minterms or product terms. Each of these
four OR gates would have 32 inputs and be supplied from the decoder's 32
outputs through fusible connections.
A 32×4 PROM's above lying architecture contains a large number of AND
gates, with four OR gates on the output side and the input side hardwired to
produce all 32 product terms corresponding to five variables. Through
programmable linkages, all 32 product terms or minterms are available at the
inputs of each of the OR gates. This allows users to choose from four different
five-variable Boolean functions. PROMs can be used to create very
complicated combinational functions by appropriately forming or breaking
these links. To summarize, a 2n×m PROM is required to create an n-input or
n-variable, m-output combinational circuit. This PROM can be used to create
a Boolean function with two types of outputs, as seen below.
F1 (A, B, C) = ∑m (1, 2)
F2 (A, B, C) = ∑m (1, 4, 7)
This Boolean function would necessitate the use of an 8×2 PROM to
implement. In reality, a When employing PROMs to construct Boolean
functions, the procedure becomes more cost-effective when the number of
'don't care' conditions is big and each 'don't care' condition has either all 0s or
all 1s. PROM would not be utilized to create a Boolean function as simple as
the one shown above. The goal of this section is to show how a PROM
implements a Boolean function. PROMs would only be employed in the case
of extremely complex Boolean functions in practice.
which has eight AND gates with four input lines, eight product lines, and four
output lines, is shown in the diagram above. Each AND gate has eight inputs,
one for each of the four input variables and their complements. In this
scenario, the AND gates' inputs are configured to accept any of the 16 possible
combinations of four input variables and their complements. This means that
four OR gates at the output can yield four different Boolean functions, each of
which can contain a maximum of eight minterms out of a total of 16 minterms
with four variables. PLAs use inverters at the outputs of OR gates to
implement a Boolean function in either AND-OR or AND-OR-INVERT
mode.
As a result, the picture below illustrates a generalized block schematic
depiction of a PLA device with n inputs, m outputs, and k product terms, with
n, m, and k denoting the number of input variables, OR gates, and AND gates,
respectively. As a result, each OR gate and each AND gate have k and 2n
inputs, respectively, as shown in the diagram.
PAL Architecture
The figure below depicts a PAL device with a generalized PLA architecture
and a programmable AND gate array that is fed with multiple input variables
and their complements. Any of the input variables or their complements can
appear at the inputs of any of the AND gates in the array thanks to
programmable input connections. Each AND gate produces a minterm from a
user-defined set of input variables and their complements. The outputs from
this programmable AND array are fed into an array of hard-wired OR gates in
the picture below, which shows an example of the creation of minterms from a
generic PAL device.
The outputs of the AND gates do not go directly into the inputs of the OR
gates; instead, each OR gate is fed from a subset of the AND gates in the
array, as indicated in the diagram below. This means that depending on the
number of AND gates from which it is fed, the sum-of-product Boolean
functions formed by each of the OR gates at the output will only have a
limited number of minterms. Both OR and complementing (or NOR) outputs
are provided from the PAL device. Different output logic layouts are available
in practical PAL devices. The availability of both OR and NOR outputs is one
of them. Many PAL devices also provide registered outputs, in which the OR
gate output drives the D-input of a D-type flip-flop, which is loaded with data
on the LOW-to-HIGH or HIGH-to-LOW edge of a clock signal.
Applications of CPLDs
PLDs are widely used in a variety of applications, including the
implementation of random glue logic in prototyping small gate arrays,
implementing critical control designs such as graphics controllers, cache
control, UARTs, LAN controllers, and III CPLDs are rapidly replacing SPLDs
in complex designs due to their less flexible internal architecture, which leads
to predictable timing performance, high speed, and a range of logic capacities.
Complex designs involving a large number of SPLDs can be substituted by a
CPLD-based design involving a considerably smaller number of devices, such
as mobile phones and digital assistants. The CPLD architecture is especially
well suited to designs that make use of wide AND/OR gates and don't
necessitate a huge number of flip-flops. CPLDs' reprogramming function
makes it simple to incorporate design modifications. It is also feasible to alter
the hardware without turning it off, thanks to the existence of CPLDs with an
in-circuit programming function. One of the most important benefits of the
CPLD architecture is its simple SPLD-like structure, which allows the design
to organically partition into SPLD-like units.