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IRL540 Datasheet
IRL540 Datasheet
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt Rating
VDS (V) 100 Available
• Repetitive Avalanche Rated
RDS(on) (Ω) VGS = 5.0 V 0.077 RoHS*
• Logic-Level Gate Drive COMPLIANT
Qg (Max.) (nC) 64
• RDS(on) Specified at VGS = 4 V and 5 V
Qgs (nC) 9.4
• 175 °C Operating Temperature
Qgd (nC) 27
• Fast Switching
Configuration Single
• Ease of Paralleling
D • Lead (Pb)-free Available
TO-220
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
G
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S
D The TO-220 package is universally preferred for all
G S
commercial-industrial applications at power dissipation
N-Channel MOSFET levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220
IRL540PbF
Lead (Pb)-free
SiHL540-E3
IRL540
SnPb
SiHL540
Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
RD
VDS
VGS
D.U.T.
RG
+
- VDD
5V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
VDS
90 %
10 %
VGS
td(on) tr td(off) tf
Fig. 9 - Maximum Safe Operating Area Fig. 10b - Switching Time Waveforms
L
VDS VDS
Vary tp to obtain
tp
required IAS
VDD
RG D.U.T. +
V DD
- VDS
I AS
5V
tp 0.01 Ω
IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Current regulator
Same type as D.U.T.
QG 50 kΩ
VGS 12 V 0.2 µF
0.3 µF
QGS QGD +
VDS
D.U.T. -
VG
VGS
3 mA
Charge
IG ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
- +
-
RG • dV/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VGS = 10 V*
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage Body diode forward drop
Inductor current
Ripple ≤ 5 % ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91300.
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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