1) Correlation between recombination lifetime in a diode measurement by three methods: C-

V, reverse recovery and microwave conductance

2) Study of pulsed I-V characteristics and current collapse in III-nitride HEMTs

3) DLTS measurements on a Si diode using the low-temp probe station.

4) KPFM; mapping of doping concentration along the surface of silicon

5) Quantitative Characterization of Materials using Lateral Force Microscopy

6) Finding Contact Stiffness using Force Modulation Microscopy
7) Optimization of FESEM resolution and EDS mapping parameters of conducting and non-
conducting samples. eg. Non-conducting: thermally etched and polished alumina surface or
similar samples (with sub 100 nm grain size).
8) Ambient and Low temperature CL ( cathodoluminiscence) imaging of high band gap materials.
9) Study of diode characteristics by employing EBIC (electron beam induced current studies).
10) Imaging of high atomic contrast imaging by employing different BSE detectors.
11) Pole figure analysis using XRD: a comparison study using 2D and 1D detectors