Spintronics devices

Spintronics is an emerging alternative to old traditional and conventional

electronics. This process includes the uses of the electron’s spin.
Spintronics refers to the study of nuclear’s role or a particular electron’s
role in solid-state and possible devices' physics. This kind of electronics
device mainly exploits the spin properties along with the freedom of
charge degrees. 
Also called as spin Flextronics, this technology studies the electron spin
intrinsically and the magnetic moment associated with it and the basic
electronic charge in the devices in their solid-state
Some Approaches of Spintronics leads of Polarized electrons and external
magnetic fields control the spin of the electron and eventually, it controls
the electric current. It aims to manipulate the magnetism of electrons in
the semiconductor and provide functionality and versatility to the
products that will emerge in the future.
There are two fundamental approaches to spintronics. Such as Metal-
based Spintronics which involvess giant magnetoresistance devices. In
this process, the current is passed through ferromagnetic material that is
divided by a spacer layer.; another one of the approaches is
Semiconductor Spintronics which manipulates dynamics in a spin with
non-magnetic materials and provides probabilities in metal systems. This
has an impact on technology and develops an MRAM technology that is
based on magnetic semiconductors.

The devices that use electrons' properties for storing, processing, and
transmitting information are spintronic and electronic devices. For
encoding data, electronic devices normally use electrical charge present
in an electron. The spintronic devices use spin that is the electron's
intrinsic angular momentum to encode the data. The examples include
Spin torque wave generators, macrospin approximation.
The idea of electron spin was proposed in 1925, much before the first
integrated circuit (which was in 1958). But due to the technological
limitations and lack of understanding, not much progress was made in
employing it, until the discovery of GMR in 1988. GMR ( giant
magnetoresistance) is considered as one of the milestones in the history
of physics, which led to the birth of spintronics.Spintronics devices are
divided into active devices which include spin valve, magnetic tunnel
junction, domain wall in nanowire, skyrmion And passive devices such as
Single spin logic ,hybrid spintronic. GMR effect is a phenomenon
observed in spin valves, where the electrical conductivity depends upon
the relative magnetization direction of ferromagnetic materials
FM/NFM/FM (ferromagnetic/non-ferromagnetic/ferromagnetic)
structure. Magnetic tunnel junction, a basic unit of MRAM, is a
multilayer magnetic nano-pillar structure. The discretion that spin current
transport dissipates almost zero power dissipation compared to charge
current. Recent developments in the field of material science have
enabled the development of unique structures, where the advantages of
both magnetic as well as silicon-based devices are combined to obtain
hybrid magnetic/silicon devices.
Spintronic devices are expected to be utilized not only in the memory sector
but also in the recently buzzing new paradigm of normally-off/instant-on
computer architecture known as PIM. Here, spintronic devices would also
facilitate the processing of information/data apart from storing them. Hence,
the computational capability is embedded into the memory .