‘Ordering nuinber:eN S467 2SK1464 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features » Low ON-state resistance. + Very high-speed switching. - Converters. Absoluté Maximum Ratings at Ta=25°C unit Drain to Source Voltage ‘Voss 900 V. Gate to Source Voltage Voss #30 OV Drain Current(DC) lb 8 A Drain Current(Pulse) Tpp —- PWS10ys, duty eycles1% 16 A ‘Allowable Power Dissipation Pp Te= 25°C so OW 30 W ‘Channel Temperature Teh 150 °C Storage Temperature Totg —55t0 +150 °C Electrical Characteristics at Ta = 25°C min typ mex unit D-S Breakdown Voltage Veaross | 900 v Zero Gate Voltage Drain Current Ipss Vs: 10 mA Gate to Source Leakage Current Igss Vos £100 nA Cutoff Voltage Vescom Vos 2.0 30 = Forward Transfer Admittance IVgl Vs: 25 6.0 8 Static Drain to Source Rosin) Ip=4A,Vgs=10V 12 16 a on State Resistance Input Capacitance Ciss 1600 pF Output Capacitance Coss 500 PF Reverse Transfer Capacitance Crs 350 vF ‘Turn-ON Delay Tine talon 20 ns Rise Time te 80 ns ‘Turn-OFF Delay Time tarot 350 ns Fall Time & 150 ns Diode Forward Voltage Vso Is=8A,Vgs=0 18 OV (Note) Be careful in handling the 25K1464 because it has no protection diode between gate and source. Switching Time Test Cireuit Package Dimensions 2076 (unit: mm) Yoo be. $05x asenuea r. wes S:Seurce xs Di Drain Gale SANYO: TO.3PML SANYO Electri 6131JN (KOTO) X6826, 8035 No.S467-1/52SK1464 a x 4o =-Yos vo} x} > : - Bs Tal Ts 2 3 sv 5] Eu Z é § © 4 q E a y a 4 ~av A ET os a 26350 a5 0 Deainto Source Voltage,Vos ~ ¥ Drain to Source Voltage,Vog ~ V lo - Vos a lo = Tc % a Vea teonide <* 28 <* i 1 i be ? {|__| __}_ae 2 <2 Ee Bs 8 8 a 3 g WN a. gE. oe ea SOTO 29 eB TSO Gate to Source Voltage,Vos Case Temperature,Te —°C. Vosion - Te SW Time = io , xu my losin > 7 3 e SI z 2 +L | Go} 5 ~~! 2 3 = é i {58TH 8 % (Case Temperatare.Te ~*C Drain Cureestly — A Posten - Vos Rosin - Te 20 a ora pea C i a1 ie Static Drain to Source on State Resistance, Rosi) — ‘Statie Drain to Source ‘onState Resistance,Rsaay — 9 7 ee Roma APPEL 2 Gate toSoureé Voltage.Vog — V Case Teitperatare,Ts ~ °C No.3467-2/328K1464 Wish = I 1¥isl — Ib = fem 8 Tae =r = i ry aig z sry] 3 $10 & i oF w Poe HHH +0 Drala Currentdy ~ A Drain Current = A Giss, Coss, Crss_- Vos ASO vaso the ts < pet Ciss t n = 2m ? 8 Exo) i Bee 3 g gy é a 63}Single pulse revaee a! 7 7 i Detinte Source Voltage Von ~ Dante Source Vlloge,Vos ~ ¥ - Po ~ Te ee Po-Ta i > 2 a4 2 2 3 a dad i 5 Eo é é ea 3 3 x i i < a A oO 0 (DMD GO 0 ae it Ww 60 Anvoent Temperate Ta "0 Case emperetare,Te =" WENo products described or contained herein are intended for use in surgical implants, fe-support systems, aerospace equipment, suctear power contral systems, vehicles, disaster/crime-prevention equipment ard ‘the tke, the falure of which may decty or indreoty kuse anjury, death or property loss, 1 Anyone purchasing ary products descrted o” contained heron for an above-mentioned use shal © Accopt full responsbilty and indemnify and defend SANYO ELECTRIC CO. LTD. its affiiates, subsidiaries and distibutors and all thet office's and employees, pinty and several, against any and al clams and litigation and all damages, cost and expenses associated with such use ® Wot impose any responsibity for any faut oF negigence whioh may be eed in any suoh chim or Hngaton on SANYO ELECTRIC C0, LTD, ito alfilates, subsidies and cistibutors or any of their offcers and employees jointly or severly Infcrmation (incudeg crout dagrams and oiuit parameters) herein for example ony; i is not guarant= ‘eed for volume groducton. SANYO beleves information herein is accurate and relable, but no guarante are made or imped regarng is use or ary singemants of intelootual property rights or other rights of third partis, No.8467-3/3,