2 SK 1529

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TOSHIBA 2SK1529 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 28K1529 HIGH POWER AMPLIFIER APPLICATION INDUSTRIAL APPLICATIONS Unit in mm © High Breakdown Voltage Vpgs=180V © High Forward Transfer Admittance : [Yjl=408 (Typ.) sean, snas0a © Complementary to 283200 2s MAXIMUM RATINGS (Ta =25°C) ale q CHARACTERISTIC sympon| rane [un ]} 3 4 ‘Drain-Source vonage YD: 180 v Ht A Gate-Source Voltage Vos £20 v a 3 Drain Current Ip 10 A |} so-8s *| Drain Power Dissipation (Te=25°0) | Pp 120 wf} 2502 SHO Channel Temperature Ty 150 °C Storage Temperature Range Tag =55~150 | °C MARKING “ 1. Gare FOsriA 2% Lot Number 2 DRAM HEAT SINK) re ae Lh Month Starting fom Alphabet A) pee = un vo At atures of EIAI 36-60 the Christian Bra) TOSHIBA _2-16C1B ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight: 47 CHARACTERISTIC | SYMBOL ‘TEST CONDITION man, | Typ, |MAx, | UNIT Drain Cutoff Current Tpss | Vps=180V, Vqs=0 — | = Tio] ma Gate Leakage Current Ta ‘Vps=0. Vas=+20V = | = [e058] pa Drain-Source Breakdown Voltage Vusk)pss| Ip=10mA, Vag=0 wo} — | — | v Drain-Source Vps.ons| In=6A, Vas=10V — | 25! 50] v Saturation Voltage Gate-Source Cutoff Voltage Vos (OrF)| Vps=10V, Ip=0.1A os | — | 28] v (Note) Forward Transfer _ - a oertanee Iva! | Vpg=10v, Ip=3 —j|4o}—|s Tnput Capacitance Ciss | Vps=30v, Vqs=0, f=immz | — [700 | — | pF Output Capacitance Coss | Vps=30V, Vqs=0, f=imez | — | iso | — | pF Reverse Transfor _ =o fe Capacitance Crss__ | Vps=30V, Vag=0, f=1MHz | — | 90| — | pr (Note) Vgg(OFF) Classification 0: 0.8~16 Y: 14~28 ‘This transistor is an electrostatic sensitive devide. Please handle with caution. scion Fes SP Pp a ee NDE Cit Clee naar olan ate ul Paden ue Gs eRe Bat ak cre He alo camit Ber cet Pe Se ty td ac Seen ed iad Ce its satin Ry ne 7958-01-14 13 TOSHIBA 2SK1529 1p = Vos \ 1p = Vos Te] comion source “0 (| Nosetav = ‘COMMON SOURCE = z z a Z Vos 20v DRAINSOURCE VOLTAGE. Ving. > GaTEsouRCR VOLTAGE. Vos a (Yes — ID ps (ON) - Te 5 ontion SOURCE couwow sounce | J Nosei0¥ 2 | var - 4 is ‘os Zz 4 Tea a0 En 6 ge aa ba Fa ZA 2 | By E ge z 4 F pa Q “ia or aati rr a DRAIN CURRENT 1) CASE TEMPERATURE. Te 0) c- vos Pp = Te ce 2 : gw = | source 5 3 10 vosa0 a, ecare g | a | DRAINSOURCE VOLTAGE. Vg > CASE TEMPERATURE. Te) BRVORTEN hop Oftopemans teh hope Sor sic’ it tie ts ns UBER ay et hom ue. Mo Reo greed rlmabcation or ofewbeundet any intelectual pepe oy oter rahe of TOBA CORPORATION or ther, * formation corse bran tbe to ange wtneuk MoE 7958-01-14 2/3 TOSHIBA ‘sw TIME (as SW TIME Ip ‘common souRce DRAIN CURRENT Ip (A) SWITCHING TIME TEST CIRCUIT us ourPoT [RAIN CURRENT Ip

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