SPECIFICATION (TENTATIVE) Dovico Namo 1 Power MOSFET Type Name : 28K2891-01 : Fuji Electric Co.,Ltd. Matsumoto Factory Bare _1_NANE _ernene) Fuji Electric Co.,Ltd. Jorawn lorscrer 1/13 Hi ¥04-004-071.Scope This specifies Fuji Power MOSFET 2SK2691-01 2.Construction N-Channel enhancement mode power MOSFET 3.Applications —_for Switching 4.0utview T0.3P Outview See to 5/13 page S.Absolute Maximum Ratings at Te=25°C (unless otherwise specified) Fuji Electric Co.,Ltd. Description ‘Symbol | Characteristics | Unit Remarks Drain-Source Voltage Vos 30 v [Continuous Drain Current lp £100 A Pulsed Drain Current be £400 A |Gate-Source Voltage Vos #16 Vv Maximum Avalanche Energy [Env 1555.8 mit Maximum Power Dissipation [Po 125 w 2 | [Operating and Storage Tes 150 c ; Temperature range Tag -55 10 +150 c 5 “1 L=0.207mHVec=TaV i 6.Electrical Characteristics at Tc=25%C (unless otherwise specified) E| Static Ratings . Description Symbol Conditions min. | typ. | max | Unit | [Drain-Source lo=1ma ' BVoss Breakdown Voltage Vos=0V 30 v (Gate Threshold mA ] Ves(th) Voitage| Vos-Vos 10 | 15 | 20 | v [zero Gate Vonage | Vos=30V [Ten=25C 10 | 500 | uA s Drain Current Ves=0V [Tene 125°C. o2 | 10 [mm |Gate-Source eB Ves=16V Leakage Curent] |Vos<0V 10 | 100 | nA [Drain-Source vas=av 70 | 95 Ros(on) |ID=50A ma On-State Resistance vas=10v 44 | 55ropedwmecmccstgtearetete Dynamic Ratings Description Conditions Forward ‘Transconductance b=50A, Vos=25V_ Input Capacitance os=25V. JOutput Capacitance Vas-0V Reverse Transter Capacitance lt=1 Mrz |Tura-On Time lv..=15V IVas=10V b=1008, Ras=100 Reverse Diode Description Conditions lavalanche Capability 00 wH Teh=25°C ISee Fig 1 and Fig.2 Diode Forward ‘On-Voltage| be=50A [Vas=OVTae25°C Reverse Recovery Time| be=50A |Vas=0V Reverse Recovery Charge! |-didt=100A ws Tene 25°C 7.Thermal Resistance Description IChannel to Case Fth(ch-c) [Channel to Ambient th(ch-a) Fuji Electric Co.,Ltd. 3/13 04-04-03Fig.1 Test circuit Voo=1/10 X Vos. L100uH Starting Toh=25°C. 1 shot pulse Fig.2 Operating waveforms. Fuji Electric Co.,Ltd. e 4/8 | 1W04-004-03PRE-SOLDER DIMENTIONS ARE IN MILLIMETERS, [t+ 4] CONNECTION @ GATE ree @ DRAIN @ SOURCE Note: 1. Guaranteed mark of avalanche ruggedness. VEDEC : TO-247 EIA : SC~65, Fuji Electric Co.,Ltd. é 5/13 04-004-03Power Dissipation PD=f (To) 180 12s 100 - _ = Es 50 2 i ae ° 50 108 150 Te [C] Safe operating area ID=f (VDS) :D=0.01,Tc=25°C 10° 10° zy 2 10° 10" 10" 10" 10° 10° vos [v] Fuji Electric Co.,Ltd. 2 6/13 HO4-004-03Typical output characteristics ID=f(VDS) 1802s pulse test, To=25°C 200 150 pa = 00 Ht i] a.ov “7 7 2.5 2.09 ° ° 1 2 3 4 5 vos (v] Typical transfer characteristics D=f(VGS) :80 7s pulse test ,VDS=25V, Teh=25°C | 100 f= = 10 | 1 = Pe 0 1 2 3 4 5 6 wes [v] Fuji Electric Co.,Ltd. s 773 FY | HO4-004-03ofs [s] Typical forward transconductance afs=f(ID) 1804s pulse test, DS=25V, Toh 25°C 10" 10" = Z 10" ie 10! 108 10 1D [A] Typical Drain-Source on-State Resistance RDS (on) =f (1D):80us pulse test,Tch=25°C “° ass i” 2sv 3.0v 30 JL g 2 35v 3 : 4.0v sv_| 8V ev tov 18V 160 200 Fuji Electric Co.,Ltd. 8/13 104-004-083Drain-source on-state resistance RDS (on) =f (Toh): 1ID=50A, VGS=10V ROS (on) [ma] Tech ['C] Gate Threshold Voltage vs. VG6S(th) =f (Tch): VDS=VGS, ID=1mA ves(th) [Vv] 25 75 Teh ['C] Fuji Electric Co.,Ltd. WO4-008-03Typical Gate Charge Characteristics VGS=f (Qg) :1D=100A, Toh=25°C 25 ves| Vec=24v S 15V. es 3 z 10 5 5 oO 0 ° 50 100 © 150 200-250-800 Og [nc] Typical capacitances Cef (VDS) :V6S=OV, f=1MHz 1900 10n tn 100p : 107 10° 10" 10" 10" vos [V] Fuji Electric Co.,Ltd. é 10/13 | Hos-006-03| Typical Forward Characteristics of Reverse Diode IF=f (VSD) :80 #8 pulse test, Toh=25C 220 pot T 200 180 160 140 120 100 IF [A] 80 60 40 im 20 on meen ee 4 ile 4 3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 4 vsb [Vv] a Typical Switching Characteristics vs. ID 5 t=f (1D) :Voo=15V, V6S=10V, RG=10Q : 10 — 1 : i 7 a 10° fdr) Fuji Electric Co.,Ltd. H04-004-03Maximum Avalanche Current vs. starting Tch I (AV) =f (starting Tch) 120 50 Starting Teh [0] Maximum Avalanche energy vs. starting Tch Eas=f (starting Tch):Vcc=12V, |,,S100A 1600 150 1400 1200 1000 800 Eas [mJ] 600 400 |-—~ 200 0 50 100 150 Starting Teh ['C] Fuji Electric Co.,Ltd. 12/13 o4-008-03Transient thermal impedande Zthch=f(t) parameter :D=t/T Zthch-c [k/W] Fuji Electric Co.,Ltd.