SPECIFICATION (TENTATIVE) Device Nome _: PowerMOSFET __ Type Nane : 2SK2898-01 Spec. Noo Fuji Electric Co.,Ltd. Matsumoto Factory Soe be ree Fuji Electric Co.,Ltd. DRAWN CxEL EI 1/83 WO4-004-07tress een srventtyiteare Cote 1.Scope This specifies Fuji Power MOSFET 2SK2898-01 2.Construction _N-Channel enhancement mode power MOSFET 3.Applications —_for Switching 4.0utview TO-3P —_OutviewSee to 5/13 page 5.Absolute Maximum Ratings at Tc=25 (unless otherwise specified) Description Symbol | Characteristics | Unit Remarks Drain-Source Voltage os 60 [Lv [Continuous Drain Current [Ip £100 [a Pulsed Drain Current le £400 [a IGate-Source Votage Vos £20 Vv [Maximum Avalanche Energy |Eav 1268.3 mit Maximum Power Dissipation [Po 150 Low Operating and Storage [ren 150 [oc [Temperature range [Fate ss5to+ts0 | “1 1=0.169mH,Veo=24V 6.Electrical Characteristics at Tc=25C (unless otherwise specified) Static Ratings Description symbol | Conditions min. | typ. | max | Unit Drain-Source =m BVoss Breakdovm Voltage| Vas=0V 60 v JGate Threshold o=tmA Nostth) Voliage| Voe=Vos 1o | 18 | 20 | v sre Gate Vonage | Nos=60V [Fon25e to | 500 | uA Drain Current] VoseOV__ fTe=t25°C o2 | 10 | m lGate-Source i Mos=:20V ss Leakage Current Vos-0V 10} 100 | ma Drain-Source vas=4v 7 11 Ros(on) |ID-S0A ma On-State Resistance| \vas=10v 5 : Fuji Electric Co.,Ltd. Wo#=004-03Dynamic Ratings Conditions Description Forward Transconductance| Input Capacitance [Output Capacitance Reverse Transfer Capacitance} Turn-On Time Vss=10V b=100A, Res=100 taoft) It |Turn-Off Time Reverse Diode Conditions Description lAvatanche Capabilty L=100 nH Ton=25%C See Fig.t and Fig.2 Piode Femara | e=to0a On-Vottage| Mos-0V__Tepe25C 10 | 45 |v Reverse Recovery | -=50A, Tr] Time Nvas=-0v 8 ns Reverse Recovery | f-svat-toon ns Charge fraa25'c 021 ue 7.Thermal Resistance Description Symbol rin. | typ. | max] Unt IChannalto Case _|ath(ch-o) 083 | cw [channel to Ambient [Rth(ch-a) 350 | cw Fuji Electric Co.,Ltd. ElFig.1 Test circuit Fig.2 Operating waveforms Vec=1/10 X Vos ‘L=100uH Starting Teh=25¢ 1 shot pulse Fuji Electric Co.,Ltd. 1W04-004-03,ooo Note 1. Guaranteed mark of avalanche ruggedness. 1S PRE-SOLDER DIMENTIONS ARE IN MILLIMETERS. CONNECTION ® Gate © DRAIN @ SOURCE EDEC + TO-247 EIAJ + SC-65, 5/13 Ho4=004-03Power Dissipation Po=f (Te) 50 Te [tC] Safe operating area ID=f (VS) :D=0, 01,Te=25°C 10) vos [VJHEHEHE HEE EEE eee Typical output characteristics ID=f(VDS) :80s pulse test, Tc=25°C 200 T NVeS=20¥_10V BV ay, 180 ata '3.5V 1D [Al ~2.0V vos [v] ID=f(VGS) :80 ws pulse test, VDS=25V, Teh=25°C 1D [A] Fuji Electric Co.,Ltd. i 7/13 Typical transfer character istics eeTypical forward transconductance gfs=f(ID) $8048 pulse test, VDS=25V, Toh=25°C 10" Sepp == f i he 10° 10 1D [al Typical Drain-Source on-State Resistance ROS (on) =f (1D):80ys pulse test ,Tch=25°C VGS=-~ t 4 2.0v~~ 2.5V aov ao Ht - 330 z g 8 20 - asv| Ze oy ‘a Zips 5. 0V = a eV. sey : t 15) o 50 100 150 200 DIA) Fuji Electric Co.,Ltd. 8/13 "H04-004-08Drain-source on-state resistance RDS (on) =f (Tch): 1D=50A, VGS=10V RDS (on) [m2] 50 0 50 100 150 Toh (C) Gate Threshold Voltage vs. Tch VGS (th) =f (Tch) :VDS=VGS, |D=1mA. 3.0 wa rope witer cnet sp Geereoo 0.0 50 25 0 25 60 75 100 125 150 Toh [C} Fuji Electric Co.,Ltd. 9/13 104-008-038,| Typical Gate Charge Characteristics V6S=f (Qg) : ID=100A, Tch=25°C 50 To 26 | YDS pedo LU 40 ys 20 30 18 < S + : ; 8 8 fa : = 5 i 20 J 10 10 | 5 ° ° © 80 100 150 20 250 XO 30 40 450 Og [nc] Typical capacitances Cof (VDS) : VGS-OV, f=1MHz Coss Fuji Electric Co.,Ltd. 10/13 HO4-004-03Pssst Typical Forward Characteristics of Reverse Diode IF=(VSD):80s pulse test, Tcl 220 TE Spot 200 180 160 140 120 100 IF [A] 80 60 40 20 06 08 1.0 1.2 1.4 vsb [v] Typical Switching Characteristics vs. 1D t=f (1D): Voc=30V, V6S=10V, R6=10 2 wO#-004-03Maximum Avalanche Current vs. I(AV)=f (starting Tech) 120 starting Tch 150 Starting Teh ['C] Maximum Avalanche energy vs. starting Teh Eas=f (starting Toh) :Vcc=24V, |,yS100A 1500 1250 1000 750 Eas [mJ] 500 250 0 50 100 150 Starting Teh (CJ Fuji Electric Co.,Ltd. Wo4-004-03Transient thermal impedande Zthch=f (t) parameter :D=t/T Ztheh-c [KM] Fuji Electric Co.,Ltd. Wo#-204-03