2SK2904-01 FUJI POWER MOS-FET

N-CHANNEL SILICON POWER MOS-FET

Features TO-3P
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof

Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters 3. Source

Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic

(Tc=25°C unless otherwise specified)
Item Symbol Rating Unit Drain(D)
Drain-source voltage V DS 60 V
Continuous drain current ID ±80 A
Pulsed drain current ID(puls] ±320 A
Gate-source voltage VGS ±30 V
Gate(G)
Maximum Avalanche Energy EAV *1 972.3 mJ
Max. power dissipation PD 125 W Source(S)
Operating and storage Tch +150 °C
temperature range Tstg -55 to +150 °C
*1 L=0.203mH, Vcc=24V

Electrical characteristics (Tc =25°C unless otherwise specified)

Item Symbol Test Conditions Min. Typ. Max. Units

Drain-source breakdown voltaget BVDSS ID=1mA VGS=0V 60 V
Gate threshold voltage VGS(th) ID=10mA VDS=VGS 2.5 3.0 3.5 V
Zero gate voltage drain current IDSS VDS =60V Tch=25°C 10 500 µA
VGS=0V Tch=125°C 0.2 1.0 mA
Gate-source leakage current IGSS VGS=±30V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=40A VGS=10V 9.5 12 mΩ
Forward transcondutance gfs ID=40A VDS=25V 20 40 S
Input capacitance Ciss VDS=25V 3100 4650 pF
Output capacitance Coss VGS =0V 1300 1950
Reverse transfer capacitance Crss f=1MHz 350 530
Turn-on time ton td(on) VCC=30V ID=80A 20 30 ns
tr VGS=10V 85 120
Turn-off time toff td(off) RGS=10 Ω 88 130
tf 65 120
Avalanche capability IAV L=100 µH Tch=25°C 80 A
Diode forward on-voltage V SD IF=50A VGS=0V Tch=25°C 1.0 1.5 V
Reverse recovery time t rr IF=50A VGS=0V 70 ns
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 0.13 µC

Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 1.0 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 35.0 °C/W

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2SK2904-01 FUJI POWER MOSFET
Characteristics
Power Dissipation Safe operating area
PD=f(Tc) ID=f(VDS):D=0.01,Tc=25°C
150 3
10

t=

125 1µs
10µs
2
10

100 D.C.
100µs
PD [W]

1
1ms
75 10

ID [A]
10ms

50 100ms
0
10
t
25 t
D=
T
T

-1
0 10 -1 0 1 2 3
0 50 100 150 10 10 10 10 10
Tc [°C] VDS [V]

Typical output characteristics Typical transfer characteristics

ID=f(VDS):80µs pulse test,Tc=25°C ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
200

VGS=20V 10V
100
150 8V

6.0V
ID [A]

10
ID [A]

5.5V
100

5.0V

50 1
4.5V

4.0V

3.5V
0 0.1 0
0 1 2 3 4 5 2 4 6 8 10
VDS [V]
VGS [V]

Typical forward transconductance Typical Drain-Source on-State Resistance

gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C RDS(on)=f(ID):80µs pulse test,Tch=25°C
3 50
10 VGS=
3.5V
4.0V 4.5V 5.0V 5.5V

40

2
10
30
RDS(on) [m Ω ]
gfs [s]

6V

20

1
10
8V
10V
10
20V

0 0
10 100 10
1
10
2
10
3
0 50 100 150 200

ID [A] ID [A]

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2SK2904-01 FUJI POWER MOSFET

Drain-source on-state resistance Gate Threshold Voltage vs. Tch

RDS(on)=f(Tch):ID=40A,VGS=10V VGS(th)=f(Tch):VDS=VGS,ID=10mA
30 5.0

4.5
25
4.0

3.5
20 max.
3.0
RDS(on)[m Ω]

max. typ.

VGS(th) [V]
15 2.5
min.
2.0
typ.
10
1.5

1.0
5

0.5

0 0.0
-50 0 50 100 150 -50 -25 0 25 50 75 100 125 150
Tch [°C] Tch [°C]

Typical Gate Charge Characteristics Typical capacitances

VGS=f(Qg):ID=80A,Tch=25°C C=f(VDS):VGS=0V,f=1MHz
50 25 100n
VDS

VGS
40 20

10n
Vcc=48V
30 15
VGS [V]

30V
VDS [V]

C [F]

12V

Ciss

20 10

1n
Coss

10 5

Crss

0 0 100p -2 -1 0 1 2
0 20 40 60 80 100 120 140 10 10 10 10 10
Qg [nC] VDS [V]

Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID

IF=f(VSD):80µs pulse test,Tch=25°C t=f(ID):Vcc=30V,VGS=10V,RG=10 Ω
4
200 10

180

160

140 3
10

120
IF [A]

t [ns]

100

80 td(off)
2
10 tf
60 10V 5V VGS=0V

tr
40

20 td(on)
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10
-1
10
0
10
1
10
2

VSD [V] ID [A]

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2SK2904-01 FUJI POWER MOSFET

Maximum Avalanche Current vs. starting Tch Transient thermal impedande

I(AV)=f(starting Tch) Zthch=f(t) parameter:D=t/T
1
100 10

80
0
10
0.5

Zthch-c [K/W]
0.2
60 0.1
-1
I(AV) [A]

10 0.05

0.02 t
t
40 D=
T
0.01
T
-2
10
0
-5 -4 -3 -2 -1 0 1
20 10 10 10 10 10 10 10
t [s]

0
0 50 100 150
Starting Tch [°C]

Maximum Avalanche energy vs. starting Tch

Eas=f(starting Tch):Vcc=24V, I(AV)<=80A
1200

1000

800
Eas [mJ]

600

400

200

0
0 50 100 150
Starting Tch [°C]