Absolute Maximum Ratings Values SEMITRANS® M

1)
Symbol Conditions Units IGBT Modules
VCES 1200 V SKD 75 GAL 123 D
VCGR RGE = 20 kΩ 1200 V Input bridge B6U with
IC Tcase = 25/80 °C 75 / 50 A brake chopper
ICM Tcase = 25/80 °C; tp = 1 ms 150 / 100 A
VGES ± 20 V
Ptot per IGBT/D1/D8, Tcase=25 °C 390 / 125 / 125 W
Tj, (Tstg) – 40 . . .+150 (125) °C
Visol AC, 1 min. 2 500 V
humidity DIN 40 040 Class F
climate DIN IEC 68 T.1 40/125/56
Diodes 9) D1-6 D7 D8
IF Tcase = 80 °C 9) 15 30 A
IFM= – ICM Tcase = 80 °C; tp = 1 ms 30 60 A
IFSM tp = 10 ms; sin.; Tj = 150 °C 600 200 350 A 7D-Pack = 7 Diodes Pack
I2t tp = 10 ms; Tj = 150 °C 1800 200 600 A2s

Characteristics
Symbol Conditions 1) min. typ. max. Units
V(BR)CES VGE = 0, IC = 1 mA ≥ VCES – – V
VGE(th) VGE = VCE, IC = 2 mA 4,5 5,5 6,5 V
ICES VGE = 0  Tj = 25 °C – 0,8 1 mA

VCE = VCES  Tj = 125 °C – 3,5 – mA SKD 75 GAL
IGES VGE = 20 V, VCE = 0 – – 200 nA
VCEsat IC = 50 A  VGE = 15 V;  – 2,5(3,1) 3(3,7) V
  Features
VCEsat IC = 75 A  Tj = 25 (125) °C – 3(3,8) – V • Round main terminals (2 mm∅)
gfs VCE = 20 V, IC = 25 A 40 – S • Easy drilling of PCB
CCHC per IGBT – – 350 pF • Input diodes glass passivated
Cies  VGE = 0 – 3300 4300 pF • 1400 V PIV, good for 500 VAC
Coes  VCE = 25 V – 500 650 pF • High I2t rating (inrush current)
Cres  f = 1 MHz – 220 300 pF • IGBT is latch-up free, homoge-
neous NPT silicon-structure
td(on)  VCC = 600 V – 44 100 ns
• High short circuit capability,
tr  VGE = + 15 V / - 15 V 3) – 56 100 ns
 IC = 50 A, ind. load self limiting to 6 * Icnom
td(off)  – 380 500 ns
• Fast & soft CAL diodes8)
tf  RGon = RGoff = 22 Ω – 70 100 ns
 T = 125 °C • Isolated copper baseplate
Eon  j – 8 – mWs
using DCB Direct Copper Bon-
Eoff – 5 – mWs
ding Technology
Inverse Diode D78) of brake chopper • Large clearance (9 mm) and
VF = VEC IF = 15 A  VGE = 0 V;  – 2,0(1,8) 2,5 V creepage distances (13 mm).

VF = VEC IF = 25 A  Tj = 25 (125) °C  – 2,3(2,1) – V
VTO Tj = 125 °C – 1,1 1,2 V Typical Applications:
rT Tj = 125 °C – 45 70 mΩ Input rectifier bridge (B6U) with
IRRM IF = 15 A; Tj = 25 (125) °C2) – 12(16) – A brake chopper for PWM inverter
Qrr IF = 15 A; Tj = 25 (125) °C2) – 1(2,7) – µC drives using SEMITRANS
FWD D8 of "GAL" brake chopper 8) SKM 75GD123D
VF = VEC IF = 25 A  VGE = 0 V;  – 2,0 (1,8) 2,5 V

VF = VEC IF = 40 A  Tj = 25 (125) °C  – 2,3 (2,1) – V 1)
Tcase = 25 °C, unless otherwise
VTO Tj = 125 °C – – 1,2 V specified
2)
rT Tj = 125 °C – 25 44 mΩ IF = – IC, VR = 600 V,
IRRM IF = 25 A; Tj = 25 (125) °C2) – 19(25) – A – diF/dt = 500 A/µs, VGE = 0 V
3)
Qrr IF = 25 A; Tj = 25 (125) °C2) – 1,5(4,5) – µC Use VGEoff = -5 ... - 15 V
8)
CAL = Controlled Axial Lifetime
Thermal Characteristics
Technology.
Rthjc per IGBT / diode D1..6 9) – – 0,32 / 1,0 °C/W 9)
Data D1 - D6, case and
Rthjc per diode D7 / D8 – – 1,5 / 1,0 °C/W
mech. data → B6 - 230
Rthch per module – – 0,05 °C/W

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SKD 75 GAL 123 D

Tj = 125 °C
VCE = 600 V
VGE = + 15 V
RG = 22 Ω

Fig. 1 Rated power dissipation Ptot = f (TC) Fig. 2 Turn-on /-off energy = f (IC)

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1 pulse
Tj = 125 °C WS
TC = 25 °C
VCE = 600 V XV

Tj < 150 °C
VGE = + 15 V 

IC = 50 A
XV



PV

 P s

 Not for

   0
 

9&( >9@
linear use

Fig. 3 Turn-on /-off energy = f (RG) Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)

ICSC/ICN 502soas.vpo
ICpuls /I C 502rso.vpo Tj < 150 °C
2,5 Tj < 150 °C 12
VGE = + 15 V
VGE = 15 V
tsc < 10 µs
RGoff = 22 Ω 10
2 L < 25 nH
IC = 50 A
ICN = 50 A
8
Note:
1,5 *Allowed numbers of
short circuit:<1000
6
*Time between short
circuit:>1s
1
4

0,5
2

0 0
0 500 1000 1500 0 500 1000 1500
VCE [V] VCE [V]

Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit IC = f (VCE)

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 Tj = 150 °C
VGE > 15 V

Fig. 8 Rated current vs. temperature IC = f (TC)

IC [A] 502us3.vpo IC [A] 502us7.vpo
100 100

17V 17V
80 80
15V 15V

13V 13V
60 11V 60
11V

9V 9V

40 7V 40 7V

20 20

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE [V] VCE [V]

Fig. 9 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C

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Pcond(t) = VCEsat(t) . IC(t) 


VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) . IC(t) 


VCE(TO)(Tj) ≤ 1,5 + 0,002 (Tj - 25) [V]


typ.: rCE(Tj) = 0,020 + 0,00008 (Tj - 25) [Ω] 


max.: rCE(Tj) = 0,030 + 0,00010 (Tj - 25) [Ω]


+2 
valid for VGE = + 15 [V]; IC ≥ 0,3 ICnom
−1 
      
9 *( >9@
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations Fig. 12 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V

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SKD 75 GAL 123 D

VGE [V] 502Qg3.vpo C [nF] 502C.vpo

20 100

18 600V 800V
ICpuls = 50 A VGE = 0 V
16
f = 1 MHZ
14
10
12
Ciss
10

8
1
6
Coss
4
Crss
2

0 0,1
0 100 200 300 400 0 10 20 30 40
QG [nC] VCE [V]

Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.VCE

t [ns] 502tic.vpo W >QV@ WUJY SR

1000 
WGRII
Tj = 125 °C Tj = 125 °C
VCE = 600 V VCE = 600 V
tdoff VGE = + 15 V VGE = + 15 V
RGon = 22 Ω IC = 50 A
RGoff = 22 Ω WU
induct. load
tr induct. load WGRQ
100 
tf WI

tdon

10 
20 40 60 80 100 120        
IC [A] 5* >:@
Fig. 15 Typ. switching times vs. IC Fig. 16 Typ. switching times vs. gate resistor RG

M040GD12.X LS -18


9 &&  9 5*
P-
7M  ƒ&  Ω
9 *( ‘ 9
  Ω

 Ω


 Ω

100 Ω





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Fig. 17 Typ. CAL diode forward characteristic Fig. 18 Diode D8 turn-off energy dissipation per pulse

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SKD 75 GAL 123 D

SEMITRANS
Sixpack modified
Case D 69 A
UL recognition
File E63 532

*)

*) Plastic collar around

pin B for UL creepage
distance of > 12,7 mm.

Dimensions in mm

Fig. 21 Case outline and circuit diagram

This is an electrostatic discharge

Characteristics sensitive device (ESD).
Symbol Conditions 1) Values Units Please observe the international
min. typ. max. standard IEC 747-1, Chapter IX.
Input Bridge Rectifier D1...D6 Two devices are supplied in one
VRRM 1400 – – V SEMIBOX A.
ID Tcase = 80 °C; – – 100 A Larger Packing units (10 and 20
pieces) are used if suitable.
VF Tvj = 25 °C; IF = 75 A – – 1,45 V SEMIBOX → C - 1.
VTO Tvj = 150 °C – – 0,8 V
rT Tvj = 150 °C – – 8,5 mΩ
Rthjc D1...D6 1,0 K/W
Tsolder > 5 s max. 15 sec. (transfer) – 180 250 °C
Mechanical Data
M1 to heatsink, SI Units (M5) 4 – 5 Nm
to heatsink, US Units 35 – 44 lb.in.
a – – 5x9,81 m/s2
w – – 175 g

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