SEME 2N2222A

LAB
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
HIGH SPEED
5.31 (0.209)
4.95 (0.195)
MEDIUM POWER, NPN
4.52 (0.178)
SWITCHING TRANSISTOR
5.33 (0.210)
4.32 (0.170)

FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
12.7 (0.500)
min.

0.48 (0.019) • HIGH SPEED SATURATED SWITCHING

0.41 (0.016)
dia.
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
2.54 (0.100)
Nom.

3 1
2

TO–18 METAL PACKAGE

Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

VCBO Collector – Base Voltage 75V
VCEO Collector – Emitter Voltage 40V
VEBO Emitter – Base Voltage 6V
IC Collector Current 800mA
PD Total Device Dissipation @ TA = 25°C 0.5mW
Derate above 25°C 2.28mW / °C
PD Total Device Dissipation @ TC = 25°C 1.2W
Derate above 25°C 6.85mW / °C
TJ , TSTG Operating and Storage Junction Temperature Range –65 to +200°C

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/96
SEME 2N2222A

LAB
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
V(BR)CEO Collector – Emitter Sustaining Voltage IC = 10mA IB = 0 40 V
V(BR)CBO Collector – Base Breakdown Voltage IC = 10µA IE = 0 75 V
V(BR)EBO Emitter – Base Breakdown Voltage IE = 10µA IC = 0 6 V
ICEX Collector Cut-off Current VCE = 60V VEB(off) = 3V 10 nA
IE = 0 VCB = 60V 0.01
ICBO Collector – Base Cut-off Current µA
TA = 150°C 10
IEBO Emitter Cut-off Current (IC = 0) IC = 0 VEB = 3V 10 nA
IBL Base Current VCE = 60V VEB(off) = 3V 20 nA
ON CHARACTERISTICS
IC = 150mA IB = 15mA 0.3
VCE(sat)1 Collector – Emitter Saturation Voltage V
IC = 500mA IB = 50mA 1
IC = 150mA IB = 15mA 0.6 1.2
VBE(sat)1 Base – Emitter Saturation Voltage V
IC = 500mA IC = 50mA 2
IC = 0.1mA VCE = 10V 35
IC = 1mA VCE = 10V 50
IC = 10mA VCE = 10V 75
hFE DC Current Gain TA = –55°C 35 —
IC = 150mA VCE = 10V 1 100 300
IC = 150mA VCE = 1V 1
50
IC = 500mA VCE = 10V 1
40
SMALL SIGNAL CHARACTERISTICS
fT Transition Frequency 2 IC = 20mA VCE = 20V f = 100MHz 300 MHz
Cob Output Capacitance VCB = 10V IE = 0 f = 100kHz 8
pF
Cib Input Capacitance VEB = 0.5V IC = 0 f = 100kHz 25
IC = 1mA VCE = 10V f = 1kHz 50 300
hfe Small Signal Current Gain —
IC = 10mA VCE = 10V f = 1kHz 75 375
SWITCHING CHARACTERISTICS
td Delay Time VCC = 30V VBE(off) = 0.5V 10
ns
tr Rise Time IC = 150mA IB1 = 15mA 25
ts Storage Time VCC = 30V IC = 150mA 225
ns
tf Fall Time IB1 = IB2 = 15mA 60

NOTES:
1) Pulse test: tp ≤ 300µs , δ ≤ 2%
2) fT is defined as the frequency at which hFE extrapolates to unity.

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/96