WeEn Semiconductors

Introduction to Silicon Carbide SiC MOSFETs

Design, products, applications
Jan Huijink, Technical Marketing Manager

December 9, 2021
Agenda

WeEn is thrilled to introduce Silicon Carbide MOSFETs

• Power Semiconductors overview

• SiC better than Si for Power components
• WeEn SiC MOSFET Chip Design
• WeEn SiC MOSFET Product Portfolio, Roadmap
• WeEn SiC MOSFET Features, Benefits, Benchmark
• Applications for WeEn SiC MOSFETs
Power Semiconductors overview

Uncontrolled device Fully controlled device Half controlled device

Uncontrolled device: Mainly diode. Not controllable turn-on and turn-off. Unidirectional current flow.

Half controlled device: Mainly Thyristor. Controllable turn-on and uncontrollable turn-off.

Fully controlled device: Controllable turn-on and turn-off. Main types are:
MOSFET (Metal Oxide Semiconductor Field Effect Transistor, voltage controlled)
IGBT (Insulated Gate Bipolar Transistor, voltage controlled)
BJT (Bipolar Junction Transistor, current controlled, mostly used in signal circuit nowadays)
JFET (Junction FET, normally-on device, hard to use)
 SiC outperforms Si for Power Electronics
Electric Field (V/cm)

GaN
• Industrial Applications
Bandgap 106 SiC • Very fast switching PFC and LLC Converters
(eV) 3 Thermal
Si • Reduced cost and size for passive components
105 Conductivity
１ ４ (W/cm・℃) • Reduced heatsink
２
• Higher efficiency
１ 1k

3k • Automotive Applications
3 Melting • EV Chargers, faster charging of the car
Electron Saturation Point (℃) • Electric Vehicle Motor Drives
Velocity (× 107cm/s)
• Weight reduction
Higher Switching Frequencies are possible, enabling
Lower Switching losses • Longer range for the car

Higher Breakdown Voltage, enabling

Lower RDSon and Lower Conduction losses

Higher Operating Temperature and

Reduced Cooling requirements
SiC MOSFETs

Features and benefits:

• Low on-resistance, low conduction losses
• Fast switching speed, low switching losses
• 0V turn-off gate voltage for simple gate drive
• Easy to parallel
• Controllable dV/dt for optimized EMI
• Reduced cooling requirements
• RoHS compliant

Applications:
• Switch Mode Power Supplies SMPS
• Uninterruptable Power Supplies UPS
• Solar string inverter and solar optimizer
• EV Charger
• Motor Drives
• Induction heating
SiC MOSFET Chip
SiC MOSFET Technology Development
Generation Features Cell Pitch Ron,sp (25℃）

Gen.1 Long Channel Length > 10 μm ~ 8.0 m©•cm2

Gen.2 Channel Self-Aligned ~ 9 μm ~ 5.0 m©•cm2

Gen.3 CSL layers / ~ 6 μm ~ 3.0 m©•cm2

Trench Structure

Gen. 1 ~ 2
Gen. 3
 SiC MOSFET Rdson
Planar SiC MOSFET
Contribution
Resistance Percentage
(1200V Typically)
Source Contact (RS) 2.6%
Channel (RCH) 29%
Accumulation(RA) 7%
JFET (RJFET) 11%
Drift Layer (RDR) 36%
Substrate (RSUB) 14%
Electrode Contact(RCT) 0.4%

Trench SiC MOSFET: Reduced Channel Resistance

Shielded Gate Double Trench Asymmetric Trench

WeEn SiC MOSFET
Planar SiC MOSFET
Product Voltage Current Rdson Package Qualification
(25℃/100℃)

WNSCM80120W 1200V 40A/20A 80m© TO-247 Industrial

WNSCM80120R 1200V 40A/20A 80m© TO-247-4 Industrial

WNSCM160120W 1200V 20A/10A 160m© TO-247 Industrial

WNSCM1R0170W 1700V 5A/3A 1© TO-247 Industrial

TO-247 TO-247-4
 SiC MOSFET portfolio
VBRDS Rdson(typ) Tj(max) Qualification SOT429 SOT429 TO263-7L
@ 25C (TO247-3L) (TO247-4L) (D2PAK-7L)
(V) (mohm) °C
1200 20 175 Industrial WNSCM20120W WNSCM20120R WNSCM20120L

1200 30 175 Industrial WNSCM30120W WNSCM30120R WNSCM30120L

1200 40 175 Industrial WNSCM40120W WNSCM40120R WNSCM40120L

1200 60 175 Industrial WNSCM60120W WNSCM60120R WNSCM60120L

1200 80 175 Industrial WNSCM80120W WNSCM80120R WNSCM80120L

Q4Y21 Q4Y21
1200 160 175 Industrial WNSCM160120W WNSCM160120L
Q4Y21
1700 1000 175 Industrial WNSCM1R0170W WNSCM1R0170L
Q1Y22

Types in bold Blue represent new products

Types in bold red italic represent products in development
Highlights of WeEn SiC MOSFET
Take WeEn 1200V, 80mΩ SiC MOSFET as an example,

1. High threshold voltage 3.5V@ 25℃ (2.5V@ 150℃) 1. Low risk of spurious turn-on
2. Suppressed gate-source ringing Can be driven with 0-20V
3. Low thermal resistance (Maximum value 0.65℃/W) Benefit No need of negative Vgs
4. High Blocking Voltage (Beyond 1600V) 2. Good Gate oxide reliability
5. Low 𝑅𝑅𝑑𝑑𝑑𝑑(𝑜𝑜𝑜𝑜) @ High Temperature 3. Good high temperature
6. Good Figure of Merit (FOM)@ High Temperature performance

Dynamic Performance
Qg(nC) Ciss(pF) Coss(pF) Crss(pF) FOM @25℃ FOM @100℃
Device name RDS,ON*Qg RDS,ON*Qg
(Ω●nC) (Ω●nC)

WNSCM80120W 59 1355 69 5.3 4.4 4.9

1 54.2 1140 84 5.8 4.5 6.3

2 57.7 1302 78 5.7 4.0 4.9

3 53.4 851 47 22.1 4.1 6.0

4 85 1825 75 15 6.6 7.6

Static Performance
RDSON(mΩ)
VTH(V) BV(V) IDSS(µA) Ron,sp
VG=20V
Device name
IDS=20A
IDS=5mA IDS=1mA VDS=1200V (mΩ∙cm2)

WNSCM80120W 75.5 3.5 1660 0.04 4.5

1 82.2 2.4 1660 0.01 5.4

2 70.2 2.8 1500 0.05 3.9

25℃
3 76.6 4.0 1480 0.06 3.8

4 78.1 2.7 1440 0.19 4.9

WNSCM80120W 83.6 2.8 1680 0.37 5.0

1 116.3 1.9 1680 0.37 7.6

100℃
2 85.6 2.2 1540 0.25 4.8

3 112 3.5 1720 0.22 5.6

4 89.3 2.1 1690 0.38 5.6

· 11 ·
Vgs waveform of WeEn vs Competitor
Test condition – Rg=5Ω, Vgs(-5V - +20V)

Vgs Waveform Ringing During Turn-on Transient

30
25.50
25 20.70

20

15
Vgs(V)

10

5
Competitor
0
WNSCM80120W
-5

-10
Timeline
· 12 ·
Influence of External Gate Resistor
Test condition Value Function Part #
Vds 800V FWD WNSC2D101200W
Id 20A DUT WNSCM80120W

External gate Eon(μJ) Eoff(μJ) Max Vgs Min Vgs

resistor(-5- during turn- during turn-
+20V, 25℃) on transient off transient
0© 220 39 24.4V -8.8V

2.5© 282 46 23.0V -7.0V

5© 380 53 20.4 -5.6V

10© 467 60 20.0 -5.2V

15© 549 79 20.0 -5.2V

Advantages of SiC Device in Solar Application
10kW DC-DC Vin=450V Vout=650V
0.995
Items Parameters

Input voltage 450Vdc

0.99
Output voltage 650Vdc

Rated output 10kW

Efficiency
0.985
power
Frequency 100kHz for SiC MOSFET 0.98
20kHz for Si IGBT WNSCM801200+WNSC2D201200 100kHz
IGBT+WNSC2D201200 20kHz
Inductor size 63cm3 x 1
IGBT+Si Diode 20kHz
150cm3 x 2 0.975
1000 6000 11000
Output Power

100kHz Inductor 20kHz Inductor

WeEn 10kW DC-DC EVB
Efficiency of WeEn Device vs Competitor
WeEn 1200V 80m© SiC MOSFET vs Competitor 80m© SiC MOSFET

Test condition: Boost DC-DC CCM Circuit

Vin=450V Vout=640V

DC-DC Vin=450V Vout=640V Fsw=40kHz Vgs=-5-20V DC-DC Vin=450V Vout=640V Fsw=100kHz Vgs=-5-20V
98.50% 98.40%
98.45%
98.35%
98.40%
98.35%
98.30%
98.30%

Efficiency
Efficiency

98.25% 98.25%
98.20%
98.15% 98.20%

98.10% WNSCM80120W
98.15% WNSCM80120W
98.05%
98.00%
98.10%
1000 2000 3000 4000 5000 6000 7000
1000 2000 3000 4000 5000 6000 7000
Output power(W)
Output power(W)
Efficiency of WeEn Device vs Competitor
WeEn 1200V 160m© SiC MOSFET vs Competitor 160m© SiC MOSFET
40kHz, Vgs @ datasheet recommended value 40kHz, Vgs= -5 -18V
98.40% 98.40%

98.35% 98.35%

98.30% 98.30%

98.25% 98.25%

Efficiency
98.20%
Efficiency

98.20%
98.15%
98.15% WNSCM160120W 18V
WNSCM160120W 20V 98.10%
98.10% Competitor 1 18V
Competitor 1 15V 98.05%
98.05% Competitor 2 18V
Competitor 2 18V 98.00%
98.00% 1000 2000 3000 4000 5000 6000 7000
1000 2000 3000 4000 5000 6000 7000 Output power(W)
Output power(W)

100kHz Vgs @ datasheet recommended value 100kHz Vgs=-5-18V

98.40% 98.40%
98.35%
98.35%
98.30%
98.30%
98.25%
98.25%
98.20%

Efficiency
Efficiency

98.20%
98.15%

98.10% 98.15%

98.05% 98.10%
WNSCM160120W 20V WNSCM160120W
98.00% 98.05% 18V

97.95%
98.00%
1000 2000 3000 4000 5000 6000 7000
1000 2000 3000 4000 5000 6000 7000
Output power(W) · 16 ·
Output power(W)
Influence of Package 3pin vs 4pin
Preferably use TO-247-4pin for New Designs

Vds=800V, Id=20A, Rg=0©

Vgsmax=29V, Eon=203uJ Vgsmax=21V, Eon=90uJ

· 17 ·
SiC MOSFET Protection Basics
- Short circuit protection
• What is short-circuit current? Test condition: Vgs=20V, Vdc=800V, Ipeak=280A
Device under test: WNSCM80120W

IGBT Type I shoot Vdc

through short circuit
Tsc = 3uS
Isc No failure

DUT
VGS1
VGS2

• What are the ways to detect a short circuit?

Method Benefits Drawbacks
Vds/Vce sensing (DESAT) Simple IGBT-specific
Delay due to blanking time
Shunt resistor Accurate Higher power loss
Current transformer or Isolated from the circuit Requires sensitive and
Rogowski coil high-bandwidth equipment;
costly
SiC MOSFET reliability
Reliability related

Parameter Comment WeEn Value

VGS, max Generally positive voltage of commercial SiC -10 to 25V

MOSFET is 19 to 25V. Negative voltage is -8
to -10V. Never exceed these values

VGS, operation Generally from -5V to 15-20V. Normal -5 to 20V

operation voltage range

Vth Generally 2.5-4.5V@25℃, about 1V 3.5V

lower@100℃, this can cause spurious turn-on
issues

CGD The smaller the ratio, the easier to prevent a

CG𝑆𝑆 dv/dt turn-on during switching
Some major applications

• Uninterruptable Power Supply

• Photovoltaic Inverter

• EV Charger

• Electric Vehicle Motor Drive

 Uninterruptible Power Supply UPS

SiC Diodes: 1200V

SiC Diodes: 1200V

SiC MOSFETs: 1200V

SiC Diodes: 650V

Photovoltaic Inverter

SiC MOSFETs: 1200V

SiC Diodes: 1200V

SiC Diodes: 1200V

SiC MOSFETs: 1200V SiC MOSFETs: 1200V

EV Charger

3-Phase mains input Vienna rectifier stage Dual LLC stage HF rectifier stage Battery
Electric Vehicle
- On-board Power Electronics
On board Charger
AC-DC Auto-grade
Interleaved PFC 400V bus DC/DC inverter
unidirectional DC-AC AC-DC
Inverter Isolated
6.6kW single phase Battery
on board charger Charge

SiC Diode:
SiC Diode: 650&1200V,
650V, 15-30A 20-30A
3 phase PWM Rectifier 800V bus DC/DC inverter
DC-AC AC-DC
Inverter Isolated
11kW 3 phase
Battery
on board charger Charge

SiC MOSFET: SiC Diode:

1200V, 80mΩ 650&1200V, 20-30A
Function Technology WeEn Series Voltage / Current
PFC Diode SiC Diode WNSC 2D/6D 650V / 15-30A
Output rectifier SiC Diode WNSC 2D/6D 650&1200V / 20-30A
3 phase PWM
SiC MOSFET WNSC MOS 1200V / 80m©
rectifier/DC-DC
 On-board Charger (OBC)

Mains Bridgeless rectifier stage LLC stage Galvanic isolation HF rectifier stage Battery
 On-board Charger and Inverter

Charger operation mode

Mains Bridgeless rectifier stage LLC stage Galvanic isolation HF rectifier stage Battery

Inverter operation mode

Mains Inverter stage HF rectifier stage Galvanic isolation LLC stage Battery
Electric Vehicle Motor Drive

SiC MOSFETs: 1200V

Summary

• WeEn 1200V SiC MOSFETs are performing very well:

o High threshold voltage Vth=3.5V@25℃
o Vgs ringing is low, resulting in good gate oxide
reliability and low EMI
o Low thermal resistance
o High breakdown voltage >1600V
o Good FOM at high operation temperature

• 1200V (and 1700V) SiC MOSFETs are mostly used in high

Vbus applications, DC-Link 600V to 1000V

• WeEn 1200V SiC MOSFETs will find their way in

applications such as PV-inverters, UPS, ESS, Motor Control
and EV chargers