Electronis Devices Solution

BY ARUN SINGH ( IIT DH)
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Practice sheet-11 (ELECTRONICS DEVICES SOLUTION )
PHYSICS
1 In the given diagram, is the diode D forward or reverse biased?

1
ANS: The diode D is reverse biased.
2 In a transistor, doping level in base is increased slightly. How will it affect

1
(i) collector current, and (ii) base current ?
ANS: (i) Collector current will decrease.

(ii) Base current will increase.
3 What happens to the width of depletion layer of a p–n junction when it is (i) forward biased, (ii) reverse
1
biased?
ANS: (i) The width of depletion layer decreases.

(ii) The width of depletion layer increases.
4 State the reason, why GaAs is most commonly used in making of a solar cell. 1
ANS: It has higher absorption coefficient.

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5 What will be the values of inputs A and B for the boolean expression 1
ANS: A = 0; B = 0
6 How does the d.c. current gain of a transistor change, if the width of the base region is increased? 1
ANS: Since therefore, it will decrease due to decrease in collector current.
7 Name the type of biasing of a p-n junction diode so that the junction offers very high resistance. 1
ANS: Reverse biasing.
8 Name one impurity each, which when added to pure Si, produces (i) n-type, and (ii) p-type semiconductor. 1
ANS: (i) for n-type, arsenic.

(ii) for p-type, Indium.
9 Why is the conductivity of n-type semi-conductor greater than that of the p-type semi-conductor even when
1
both of these have same level of doping?
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ANS: In n-type semiconductor charge carriers are electrons and mobility of electrons is more than that of
holes.
10 Name two factors on which electrical conductivity of a pure semiconductor at a given temperature depends. 1
ANS: (i) Band gap (ii) Biasing
11 Why can’t transistor be used as a rectifier? 1
ANS: As base is thin and lightly doped, the transistor is not fit for the purpose of rectification.
12 What is a hole? What is its physical significance? 1
ANS: Hole is the vacancy of electron in valence band. The vacancy with the hole behaves as an apparent
free particle with effective positive charge.
13 Draw energy band diagram for an intrinsic semiconductor at T = 0 K. 1

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ANS:
14 Draw energy band diagram for an intrinsic semiconductor at T > 0 K. 1
ANS:
15 Why are the elemental dopants mainly taken from 13th and 15th group, for doping Silicon or Germanium? 1
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ANS: The dopant has to be such that it does not distort the original pure semiconductor lattice. So that the
sizes of the dopant and the semiconductor atoms should be nearly the same.
16 What is an ideal diode? 1
ANS: It is a p-n junction diode which offer zero resistance in forward biasing and infinite resistance in
reverse biasing, i.e. current flows through it in one direction only.
17 What do you understand by a dynamic resistance of p-n junction diode. 1
ANS: Dynamic resistance is the ratio of a small change in voltage ∆V to a small change in current
18 What is internal field emission? 1
ANS: The emission of electrons from the host atoms present in the p-n junction due to the high electric
field is known as internal field emission or field ionisation.
19 Why is a typical solar cell drawn in fourth quadrant? 1

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ANS: I – V characteristics of solar cell is drawn in the fourth quadrant because a solar cell does not draw
current but supplies the same to the load.
20 Why are materials like CdS or CdSe (Eg ~ 2.4 eV) not used for the fabrication of a solar cell? 1
ANS: Materials like CdS or CdSe (Eg ∼ 2.4 eV) are not used because they will use only the high energy
component of the solar energy for photo-conversion and a significant part of energy will be of no use.
21 What is a Logic gate? 1
ANS: A gate is a digital circuit that follows certain logical relationship between the input and output
voltages. They control the flow of information.
22 Why NAND or NOR gates are called universal gates? 1
ANS: NAND or NOR gates are called Universal Gates since by using these gates one can realise other
basic gates like OR, AND and NOT.
23 What happens when a forward bias is applied to a p–n junction? 1
ANS: It conducts current.

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24 Which one of the two diodes D1 and D2 in the given figures (i) forward biased, (ii) reverse biased ?
ANS: D1 is reverse biased and D2 is forward biased.
25 Draw the output waveform at X, using the given inputs A and B for the logic circuit shown below. Also,
identify the logic operation performed by this circuit.
2
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ANS:
26 Distinguish between ‘intrinsic’ and ‘extrinsic’ semiconductors. 2
ANS: Intrinsic semiconductors

(i) There are no impurity atoms.
(ii) The number density of electrons is equal to the number density of holes, i.e. ne = nh.
Extrinsic semiconductors
(i) They are doped with impurity atoms (trivalent/pentavalent).
(ii) ne ≠ nh.
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27 Carbon and silicon both have four valence electrons each. How then are they distinguished? 2
ANS: Although both carbon and silicon have same lattice structure, the four bonding electrons of carbon
and silicon are respectively in the second and third orbits. Thus, ionisation energy is less for silicon than
carbon. Hence, the number of free electrons in silicon is more than of carbon. Thus, they can be
distinguished on the bases of their conductivity.
28 Draw energy band diagrams of an n-type and a p-type semiconductor at temperature T > 0 K. Mark the donor
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and acceptor energy levels with their energies.
ANS:
29 Distinguish between an intrinsic semiconductor and p-type semiconductor. Give reason, why a p-type 2
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semiconductor crystal is electrically neutral, although nh >> ne?
ANS: In the formation of

p-type semiconductor, the number of negatively charged electrons is equal to positively charged holes. So the
p-type semiconductor thus formed is electrically neutral.
30 Draw the circuit diagrams showing how a p–n junction diode is

(i) forward biased and 2
(ii) reverse biased. How is the width of depletion layer affected in the two cases?
ANS: The following figures show the required circuit diagrams.
When the p–n junction is forward biased

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as in Figure (i), the width of the depletion layer decreases. When an external voltage is applied, the barrier
potential is reduced thereby, decreasing the width of depletion layer. When the p–n junction is reverse biased
as in Figure (ii), the barrier potential increases, thereby, increasing the thickness of the depletion layer.
31 Explain with the help of a circuit diagram the working of a photodiode. Write briefly how it is used to detect
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the optical signals.
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ANS:
32 Name the semiconductor device that can be used to regulate an unregulated dc power supply. With the help
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of I-V characteristics of this device, explain its working principle.
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ANS: The semiconductor device is a zener diode. It is observed from the graph that for applied reverse
biased voltage (breakdown voltage, VZ) for a large variation of current, zener voltage remains constant.
33 Draw the circuit diagram of an illuminated photodiode in reverse bias. How is photodiode used to measure
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light intensity ?
ANS:
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34 Draw a circuit diagram showing the biasing of an LED. State the factor which controls (i) wavelength of
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light, and (ii) intensity of light emitted by the diode.
ANS: The following circuit shows the biasing of an LED.

(i) The wavelength of emitted light depends upon the nature of the material of diode/band gap.
(ii) Biasing of LED.
35 Describe briefly with the help of a circuit diagram, the paths of current carriers in an n–p–n transistor with
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emitter base junction forward biased and base collector junction reverse biased.
ANS:
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36 Draw typical output characteristics of an n–p–n transistor in CE configuration. Show how these
2
characteristics can be used to determine output resistance.
ANS:
37 Draw a circuit diagram of n–p–n transistor amplifier in CE configuration. Under what condition does the 2
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transistor act as an amplifier?
ANS:
38 In the given circuit diagram, a voltmeter V is connected across a lamp L. How would (i) the brightness of the
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lamp and (ii) voltmeter reading V be affected, if the value of resistance R is decreased? Justify your answer.
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ANS:
39 In only one of the circuits given below, the lamp L lights. Which circuit is it? Give reason for your answer.
ANS: In circuit (b), lamp L lights because only in this circuit, the input circuit is forward biased and the
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output circuit is reverse biased.
40 Identify the equivalent gate for the following circuit and write its truth table.
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ANS:
41 Write the truth table for the combination of the gates shown. Name the gates used.
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ANS:
42 Identify the logic gates marked P and Q in the given circuit. Write the truth table for the combination.
ANS:
43 Identify the equivalent gate represented by the circuit shown in the figure. Draw its logic symbol and write 2
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the truth table.
ANS:
44 (i) Identify the logic gates marked P and Q in the given logic circuit.
(ii) Write down the output at X for the inputs A = 0, B = 0 and A = 1, B = 1.

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ANS:
45 (i) Identify the logic gates marked P and Q in the given logic circuit.
(ii) Write down the output at X for the inputs A = 0, B = 0 and A = 1,

B = 1.
ANS:
46 The following figure shows the input waveforms (A, B) and the output waveform (Y) of a gate. Identify the
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gate, write its truth table and draw its logic symbol.
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ANS:
47 (i) Sketch the output waveform from an AND gate for the inputs A and B shown in the figure. 2
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(ii) If the output of the above AND gate is fed to a NOT gate, name
the gate of the combination so formed.
ANS:
48 Draw the logic symbol of the gate whose truth table is given below: 2
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If this logic gate is connected to NOT gate, what will be

the output when (i) A = 0, B = 0 and (ii) A = 1, B = 1? Draw the logic symbol of the combination.
ANS:
49 Draw the output waveform at X, using the given inputs A and B for the logic circuit shown below. Also,
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identify the logic operation performed by this circuit.
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ANS:
50 Identify the logic gates X and Y in the figure. Write down the truth table for output Z for all possible inputs 2
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A and B.
ANS: The logic gates X and Y are AND and NOT respectively. The output for this combination will that
of AND gate followed by an OR gate.
51 (a) For the digital circuit given below, write the truth table showing outputs Y1 and Y2 for all possible inputs
of A and B.
(b) Show output waveform for all possible inputs of A and B. 2
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ANS:
52 C, Si and Ge have same lattice structure. Why is C insulator, while Si and Ge are intrinsic semiconductors? 2
ANS: The 4 bonding electrons of C, Si or Ge lie, respectively, in the second, third and fourth orbit. Hence,
energy required to take out an electron from these atoms (i.e. ionisation energy Eg) will be least for Ge,
followed by Si and highest for C. Hence, the number of free electrons for conduction in Ge and Si are
significant but negligibly small for C.
53 What is doping? Why is it needed? 2

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ANS: (a) The deliberate addition of a desirable impurity is called doping.

(b) At room temperature the conductivity of intrinsic semiconductor is very low. Hence, there is a necessity
of improving their conductivity. This can be done by doping.
54 Explain how a solar cell is fabricated. 2
ANS: A p-Si wafer of about 300 mm is taken over which a thin layer (~0.3 mm) of n-Si is grown on one-
side by diffusion process. The other side of p-Si is coated with a metal (back contact). On the top of n-Si
layer, metal finger electrode (or metallic grid) is deposited. This acts as a front contact. The metallic grid
occupies only a very small fraction of the cell area (<15%) so that light can be incident on the cell from the
top.
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55 What are the basic processes involved in the generation of emf by a solar cell? 2
ANS: The three basic processes are: generation, separation and collection—
(i) generation of e-h pairs due to light (with hv > Eg) close to the junction; (ii) separation of electrons and
holes due to electric field of the depletion region. Electrons are swept to n-side and holes to p-side; (iii) the
electrons reaching the n-side are collected by the front contact and holes reaching p-side are collected by the
back contact. Thus, p-side becomes positive and n-side becomes negative giving rise to photovoltage.
56 What are the important criteria for the selection of a material for solar cell fabrication? 2
ANS: The important criteria for the selection of a material for solar cell fabrication are: (i) band gap (~1.0
to 1.8 eV), (ii) high optical absorption (~104 cm–1), (iii) electrical conductivity, (iv) availability of the raw
material, and (v) cost.
57 The current in the forward bias is known to be more (mA) than the current in the reverse bias (~µA). What is
2
the reason, then, to operate the photodiode in reverse bias ?
ANS: The fractional change in minority charge carriers is more than the fractional change in majority
charge carriers. This means change in reverse bias current is more prominent than the change in forward bias
current for a change in intensity of incident light.
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58 Name the device D which is used as a voltage regulator in the given circuit and give its symbol.
ANS: The device D in the circuit is a zener diode being used as voltage regulator. The symbol of zener
diode is shown below.
59 Mention the important considerations required while fabricating a p–n junction diode to be used as a light
emitting diode (LED). What should be the order of band gap of an LED, if it is required to emit light in the 2
visible range?
ANS: Diode is encapsulated with a transparent cover so that emitted light came out. We must have heavily
doped p–n junction under forward biased. If an LED is required to emit light in the visible range,
semiconductor must have band gap of 1.8 eV.
60 Explain why elemental semiconductor cannot be used to make visible LEDs. 2

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ANS: Energy gap of Si is 1.1 eV and Ge is 0.7eV, the emission of photon energy by these semiconductors
will be in infrared region.
61 Identify the gate equivalent to the circuit shown in the figure. Write its truth table.
ANS:
62 Identify the gate equivalent to the circuit shown in the figure. Write its truth table. 2
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ANS:
63 In the circuit show in the figure, identify the equivalent gate of the circuit and make its truth table.
2
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ANS:
64 The given inputs A, B are fed to a 2-input NAND gate. Draw the output waveform of the gate.
ANS: Truth table for two inputs NAND gate is given by: The output
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waveform is as shown below.
65 (a) Explain with the help of a diagram, how depletion region and potential barrier are formed in a junction
diode.
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(b) If a small voltage is applied to a p–n junction diode how will the barrier potential be affected when it is
(i) forward biased, and (ii) reverse biased?
ANS: (a) As soon as a p-type semiconductar is joined with an n-type semiconductor, the diffusion of free
charges across the junction starts. The free charges move from the higher to lower concentration side.
Formation of potential barrier: Electrons are the majority charge carriers in n-type semiconductor. They
move towards p-type semiconductor
leaving behind the positive charged ions.
Similarly, holes being in majority in the p-type semiconductor, move towards

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the n-type semiconductor. They leave behind the negatively charged ions. This way the accumulation of
charges takes place near the junction. This stops further diffusion of the charges and the potential drop across
the junction due to these fixed charges is called potential barrier.
(b) (i) In forward bias, the barrier potential decreases.
(ii) In reverse bias, the barrier potential increases.
66 How is a Zener diode fabricated? What causes the setting up of high electric field even for small reverse bias
voltage across the diode? 3
Describe, with the help of a circuit diagram, the working of Zener diode as a voltage regulator.
ANS: Zener diode is fabricated by heavily doped p and n types of semiconductors. Due to heavy doping
the width (d) of depletion region is very thin (< 10–6 m). We know V = Ed. Here, V = reverse bias voltage, E
= electric field. As d is thin for a given value of a low reverse bias voltage, the electric field of the junction is
very high.
Zener as a voltage regulator
The unregulated dc is given as an input through a series resistor RS. The zener is always kept under reverse
bias. As the input voltage increases, the current through resistance RS and zener increases. This causes more
voltage rise in resistance RS keeping the voltage across Z the same. This is possible, as at zener voltage, the
current increases without any change in potential. As the input drops, the current through resistance RS and Z
drops causing no change in voltage across zener. Thus, at both higher and lower potential inputs, a regulated
output is obtained.
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67 With what considerations in view, a photodiode is fabricated? State its working with the help of a suitable
diagram.
3
Even though the current in the forward bias is known to be more than in the reverse bias, yet the photodiode
works in reverse bias. What is the reason?
ANS: A photodiode is fabricated with a transparent window so that the light falling on it is able to
generate the electron-hole pairs.
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When the photodiode is illuminated with light (photons) of energy (hv >
Eg) greater than the energy gap of the semiconductor, it generates electronhole pairs in the junction region.
The junction electric field separates these charges before they recombine. The electrons move towards n-side
and the holes move towards p-side.
The accumulation of charges develops an emf when joined in external circuit and the current begins to flow.
The fractional change in the minority charge carriers is more than the fractional change in the majority
charge carriers, that is why, the change in current in reverse bias is more observable than the change in
current in the forward bias.
68 Draw V–I characteristics of a p–n junction diode. Answer the following questions, giving reasons:
(i) Why is the current under the reverse bias almost independent of the applied potential up to a critical
voltage? 3
(ii) Why does the reverse current show a sudden increase at the critical voltage?
Name any semiconductor device which operates under the reverse bias in the breakdown region.
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ANS: (i) The reverse current is not limited by the magnitude

of applied voltage, but it is limited due to the concentration of minority carriers on either side of the junction.
(ii) At the critical voltage, the electric field across the junction is high enough to pull valence electrons from
the host atoms. As a result, a large number of electrons are available for the conduction which shows a
sudden increase of the reverse current at breakdown voltage.
69 (a) Describe the working of light emitting diodes (LEDs). 3

(b) Which semiconductors are preferred to make LEDs and why?
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(c) Give two advantages of using LEDs over conventional incandescent low power lamps.
ANS: (a) An LED is a forward biased p–n junction semiconducting material which emits a visible light
when forward biased, the electrons from the n-region cross the junction and recombine with the holes in the
p-region. During the recombination, their energy difference is given out in the form of heat and light. The
energy of radiation emitted is less than or equal to Eg.
(b) Materials like gallium phosphide, GaAs, etc. are used. They emit the maximum amount of energy in the
form of light.
(c) The following are advantages of LEDs over conventional incandescent low power lamps:
(i) Low operating voltage.
(ii) Low power consumption and quick action.
70 You are given a circuit below. Write its truth table. Hence, identify the logic operation carried out by this
circuit. Draw the logic symbol of the gate it corresponds to.
ANS: Truth Table: Refer to Ans. 14.19 (b) [NCERT Exercises]

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The circuit carries out the logic operation of AND gate.
71 Write the truth table for the following combination of gates:
3
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ANS:
72 You are given a circuit below. Write its truth table. Hence, identify the logic operation carried out by this
circuit. Draw the logic symbol of the gate it corresponds to.
3
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ANS:
73 (a) Why is a photodiode operated in the reverse bias mode?

(b) For what purpose is a photodiode used? 3
(c) Draw its I-V characteristics for different intensities of illumination.
ANS: (a) The fractional change in the reverse bias current is more than that of the forward bias current.
So, the change in reverse bias current with intensity of light is more prominent.
(b) (i) As a detector: It is a fast photon detector having a switching time of the order of nanoseconds.
(ii) In demodulators and in logic encoder.
(c) The I–V characteristics of a photodiode are as shown:
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74 (a) Write the functions of three segments of a transistor.

(b) Draw the circuit diagram for studying the input and output characteristics of n–p–n transistor in common 3
emitter configuration. Using the circuit, explain how input, output characteristics are obtained.
ANS: (a) The functions of three segments emitter, base and collector of a transistor are
(i) Emitter: It supplies a large number of majority carriers for the current flow through the transistor.
(ii) Base: This is the central segment. It is very thin and lightly doped.
(iii) Collector: This segment collects a major portion of the majority carriers supplied by the emitter. (b) To
obtain the input characteristics, we keep VCE constant and vary the voltage across base-emitter (VBE) to get
base current.
The inverse of the slope of input characteristics gives an input resistance.
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To obtain the output characteristics,

we keep base current IB constant and vary collector-emitter voltage (VCE) to find out corresponding values of
collector current.
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75 Draw a block diagram of a full-wave rectifier with capacitor filter. Draw input and output (filtered) voltage
3
of rectifier.
ANS:
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76 What is a filter? Explain the role of capacitor in filtering. 3
ANS: To get steady dc output from the pulsating voltage normally a capacitor is connected across the
output terminals (parallel to the load RL). One can also use an inductor in series with RL for the same purpose.
Since these additional circuits appear to filter out the ac ripple and give a pure dc voltage, so they are called
filters.
When the voltage across the capacitor is rising, it gets charged. If there is no external load, it remains
charged to the peak voltage of the rectified output. When there is a load, it gets discharged through the load
and the voltage across it begins to fall. In the next half-cycle of rectified output it again gets charged to the
peak value. The rate of fall of the voltage across the capacitor depends upon the inverse product of capacitor
C and the effective resistance RL used in the circuit and is called the time constant. To make the time
constant large value of C should be large. So capacitor input filters use large capacitors. The output voltage
obtained by using capacitor input filter is nearer to the peak voltage of the rectified voltage. This type of
filter is most widely used in power supplies.
77 Explain the function of base region of a transistor. Why is this region made thin and lightly doped? 3
ANS: If base region is broad, then majority charge carriers crossing the base emitter junction will not be
able to reach collector base junction and thereby reducing collector current.
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78 The graph of potential barrier versus width of depletion region for an unbiased diode is shown in A. In
comparison to A, graphs B and C are obtained after biasing the diode in different ways. Identify the type of
biasing in B & C and justify your answer.
Explain the following:

(i) In the active state of the transistor, the emitter base junction acts as a low resistance while the base
collector junction acts as high resistance.
(ii) Output characteristics are controlled by the input characteristics in common emitter transistor amplifier.
(iii) LEDs are made of compound semiconductor and not by elemental semiconductors.
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ANS:
79 With the help of energy band diagrams, distinguish between conductors, semiconductors and insulators. 3
ANS: Refer to Point no. 1 (b) (i), (ii) and (iii) [Important Terms, Definitions and Formulae].
80 Write briefly the important processes that occur during the formation of p–n junction. With the help of
3
necessary diagrams, explain the term ‘barrier potential’.
ANS: Two important processes involved during the formation of p-n junction are:
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(i) diffusion and (ii) drift.

As soon as p-type semiconductor comes in contact with n-type semiconductor due to the different
concentration gradient of charge carriers, the electrons start moving towards p-side and the holes start
moving from p-side to n-side. This process is called diffusion.
Due to diffusion, the positive space charge region is created on the n-side of the junction and the negative
space charge region is created on the p-side of the junction. This charge develops an electric field (junction
field) from n-side to p-side. This field forces the free charges to move. This process is called drift.
The loss of electrons from n-side and gain of electrons by p-side cause a
difference of potential across the junction, which is called barrier potential. Its polarity is such that it opposes
the flow of majority charges through the junction.
81 (a) How is a photodiode fabricated?
3
(b) Briefly explain its working. Draw its V – I characteristics for two different intensities of illumination.
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ANS: (a) A photodiode is a special purpose p–n junction diode fabricated with a transparent window to
allow light to reach the junction. Semiconductors used in the fabrication of photodiode must have energy gap
(Eg) lesser than the energy of photons (hn) used.
(b) Working: Three processes are involved in the working of a photodiode.
(i) Generation of electron-hole pairs

(ii) Separation of electrons and holes
(iii) Collection of electrons and holes
Photons generate electron-hole pairs in the junction region of the diode. The electric field in the junction
region separates these electrons and holes. The n–side collects electrons and p-side collects holes giving rise
to an emf. When a load is connected, the reverse current begins to flow. For a slight variation in intensity of
light, there is a significant variation in reverse current. So, it is used to detect optical signals.
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82 Explain with the help of a circuit diagram how a zener diode works as a dc voltage regulator. Draw its I-V
3
characteristics.
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ANS:
83 (a) State briefly the processes involved in the formation of p–n junction explaining clearly how the depletion
region is formed.
(b) Using the necessary circuit diagrams, show how the V-I characteristics of a p–n junction are obtained in 5
(i) Forward biasing (ii) Reverse biasing
How are these characteristics made use of in rectification?
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ANS:
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84 (a) Draw the circuit diagram of a full-wave rectifier using p–n junction diode. Explain its working and show
the output and input waveforms. 5
(b) Show the output waveforms (Y) for the following inputs A and B of (i) OR gate (ii) NAND gate
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ANS:
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85 Draw the circuit arrangement for studying the input and output characteristics of an n–p–n transistor in CE 5
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configuration. Draw the typical nature of these input and output characteristics. Explain how these are
obtained. Define the terms (i) input resistance and (ii) current amplification factor.
ANS:
86 (a) Differentiate between three segments of a transistor on the basis of their size and level of doping.
(b) How is a transistor biased to be in active state?
5
(c) With the help of necessary circuit diagram, describe briefly how n–p–n transistor in CE configuration
amplifies a small sinusoidal input voltage. Write the expression for the ac current gain.
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ANS:
87 Draw a simple circuit of a CE transistor amplifier. Explain its working.
Show that the voltage gain, AV, of the amplifier is given by where βac is the current gain, RL is 5
the load resistance and ri is the input
resistance of the transistor. What is the significance of the negative sign in the expression for the voltage
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gain?
ANS:
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88 Symbolically represent (i) n-p-n, (ii) p-n-p transistor. Explain transistor action of p-n-p transistor in common
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base configuration.
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ANS:
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89 Explain why base region is thin and lightly doped and show that IE = IC + IB where IE, IC and IB are emitter,
5
collector and base currents respectively.
ANS: Refer to Ans. 68

The current entering into the emitter from outside is equal to the emitter current IE. Similarly, the current
emerging from the base terminal is IB and that from collector terminal is IC. Using Kirchhoff ’s junction law
the emitter current is the sum of collector current and base current IE = IC + IB.
90 (a) Distinguish between an intrinsic semiconductor and a p-type semiconductor. Give

reason why a p-type semiconductor is electrically neutral, although nh >> ne.
(b) Explain, how the heavy doping of both p- and n-sides of a p–n junction diode results in the electric field 5
of the junction being extremely high even with a reverse bias voltage of a few volts.
Explain, with the help of a circuit diagram, how this property is used in voltage regulator.
ANS: (a) In case of an intrinsic semiconductor the number density of free electrons is equal to number
density of holes. There are no external impurity atoms in the intrinsic semiconductors and the conductivity is
low in comparision to that of doped (extrinsic semiconductors). When the intrinsic semiconductor is doped
with acceptor impurity atoms, a p-type semiconductor is formed. In case of p-type semiconductor, nh >> ne.
Therefore, the conductivity of p-type semiconductor is higher than that of the intrinsic semiconductor.
The number of negatively charged immobile ions is equal to the number of oppositively charged holes.
Therefore, p type semiconductor is electrically neutral.
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(b) The heavy doping of p and n sides of a p–n junction results into a reduced width of depletion region. As,
for the same value of barrier potential, the width decreases and the electric field across the junction increases.
As, the electric field of the junction acquires very high value for a large variation of
current, the potential difference in breakdown region remains almost same.
This property of zener diode is used in voltage regulation.
Zener diode as a voltage regulator—Refer to Ans. 57.
91 The circuit shown in the figure has two oppositely connected ideal diodes connected in parallel. Find the
current flowing through each diode in the circuit.
ANS: Since D1 is in reversed biased and offers infinite resistances so no current will flow through the
diode D1. Only diode D2 will conduct as it is in forward biased which offers zero resistance.
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So, current through D1, i1 = 0 and current through D2,
92 The circuit shown in figure uses a zener diode of 12 V as a voltage regulator to run a 12 V, 6 W tape recorder
on 110 V d.c. line. What should be the value of the resistor R, if the d.c. supply varies from 102 V –115 V?
4
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ANS:
93 You are given three semiconductors: A, B and C with respective bandgaps of 3 eV, 2 eV and 1 eV for use in
4
photodetector to detect λ = 1200 nm. Select the suitable semiconductor. Give reasons.
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ANS:
94 A photodetector is made of a semiconductor— In 0.53Ga0.47; as with Eg = 0.73 eV. What is the maximum
4
wavelength, which it can detect?
ANS:
95 Output characteristics of an n–p–n transistor in CE configuration is as shown in the figure. 4

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Determine:
(i) dynamic output resistance
(ii) dc current gain, and
(iii) ac current gain at an operating point VCE = 10 V, when IB = 30 µA.
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ANS:
96 (a) In the working of a transistor, emitter base (EB) junction is forward biased while collector base (CB) 4
junctions reverse biased. Why?
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(b) The input resistance, in the common emitter amplifier circuit of a given transistor, has a value of 1.5 kΩ.
The output of this circuit is obtained across a collector resistance of 7.5 kΩ. What would be the output
voltage, corresponding to an input voltage of 5 mV, if the current amplification factor of this transistor has a
value of 60?
ANS:
97 The circuit shown in the figure contains two diodes each with a forward resistance of 50 Ω and infinite
4
backward resistance. Find the current through the 100 Ω resistance.
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ANS: In the given circuit, diode D1 is forward biased with forward resistance of 50 Ω and D2 is reversed
biased, which offers infinite backward resistance.
Therefore, current through 100 Ω resistance = 0.02 A

98 The V–I characteristic of a silicon diode is as shown in the figure. Calculate the resistance of the diode at (i) I
4
= 15 mA and (ii) V = – 10 V.
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ANS:
99 The conductivity of a semiconductor increases with increase in temperature, because

(a) number density of free current carriers increases. 1
(b) relaxation time increases.
(c) both number density of carriers and relaxation time increase.
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(d) number density of carriers increases, relaxation time decreases but effect of decrease in relaxation time is
much less than increase in number density.
ANS: (d)
100 In the given figure V0 is the potential barrier across a p-n junction, when no battery is connected across the
1
junction. (a) 1 and 3 both correspond to forward bias of junction.
(b) 3 corresponds to forward bias of junction and 1 corresponds to reverse bias of junction.
(c) 1 corresponds to forward bias and 3 corresponds to reverse bias of junction.
(d) 3 and 1 both correspond to reverse bias of junction.
ANS: (b) Height of potential barrier is decreases when p-n junction is forward bias.
101
In figure given, assuming the diodes to be ideal (a) D1 is forward

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biased and D2 is reverse biased and hence current flows from A to B.

(b) D2 is forward biased and D1 is reverse biased and hence no current flows from B to A and vice versa.
(c) D1 and D2 are both forward biased and hence current flows from A to B.
(d) D1 and D2 are both reverse biased and hence no current flows from A to B and vice versa.
ANS: (b) Explanation: 10 V is the lower voltage in the circuit. Now p side of the p-n junction diode D1 is
connected to lower voltage and n-side of D1 to higher voltage, thus D1 is reverse biased. In D2 p-side of p-n
junction diode is at higher potential and n-side is at lower potential, therefore D2 is forward biased. Hence
current flows through junction from B to A.
102
The output of the given circuit in figure is given below. (a) would be zero at 1
all times.
(b) would be like a half-wave rectifier with positive cycles in output.
(c) would be like a half-wave rectifier with negative cycles in output.
(d) would be like that of a full-wave rectifier.
ANS: (c) Explanation: When the diode is forward biased, the resistance of pn junction diode will be low
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then current in the circuit is maximum. In this situation, a maximum potential difference will appear across
resistance connected in a series of circuit. This result into zero output voltage across p-n junction.
103 What happens during regulation action of a Zener diode? [NCERT Exemplar]
(a) The current in and voltage across the Zener remains fixed.
(b) The current through the series resistance (Rs) does not change. 1
(c) The Zener resistance is constant.
(d) The resistance offered by the Zener changes.
ANS: (d)
104 Silicon is a semiconductor. If a small amount of As is added to it, then its electrical conductivity_______. 1
ANS: increases
105 When the electrical conductivity of a semiconductor is due to the breaking of its covalent bonds, then the
1
semiconductor is said to be ____________.
ANS: intrinsic
106 Electrical conductivity of a semiconductor 1

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(a) decreases with the rise in its temperature.

(b) increases with the rise in its temperature.
(c) does not change with the rise in its temperature.
(d) first increases and then decreases with the rise in its temperature.
ANS: (b) With temperature rise, the conductivity of semiconductor increases.
107 The forbidden energy band gap in conductors, semiconductors and insulators are EG1,EG2 and EG3
respectively. The relation among them is
(a) EG1 = EG2 = EG3
1
(b) EG1 < EG2 < EG3
(c) EG1 > EG2 > EG3
(d) EG1 < EG2 > EG3
ANS: (b) In insulators, the forbidden energy gap is very large, in case of semiconductor it is moderate and
in conductors the energy gap is zero.
108 In an insulator, the forbidden energy gap between the valence band and the conduction band is of the order of
1
____________.
ANS: 5 eV
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109 A n-type semiconductor is

(a) negatively charged. (b) positively charged. 1
(c) neutral. (d) none of these
ANS: (c) n-type semiconductors are neutral because neutral atoms are added during doping.
110 In the half-wave rectifier circuit shown. Which one of the following waveforms is true for VCD the output
across C and D?
ANS: (b) Half wave rectifier rectifies only the half cycle of the input ac signal and it blocks the other half.
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111 A full-wave rectifier circuit along with the input and output voltages is shown in the figure The contribution
to output voltage from diode 2 is (a) A, C (b) B, D

(c) B, C (d) A, D
ANS: (b) In the positive half cycle of input ac signal diode D1 is forward biased and D2 is reverse biased
so in the output voltage signal, A and C are due to D1. In negative half cycle of input ac signal, D2 conducts,
hence output signals B and D are due to D2
112 A 220 V AC supply is connected between points A and B (figure). What will be the potential difference V 1
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across the capacitor? (a) 200 V (b) 110 V

(c) 0 V (d) 220 V
ANS: (d) As p-n junction diode will conduct during positive half cycle only and during negative half cycle
diode is reverse biased. During this diode will not give any output. So potential difference across the
capacitor C = peak voltage of the given AC voltage.
113 In the circuit shown in figure below, if the diode forward voltage drop is 0.3 V, the voltage difference 1
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between A and B is (a) 1.3 V (b) 2.3 V

(c) 0 (d) 0.5 V
ANS: (b) Suppose the potential difference between A and B is VAB.

Then, VAB – 0.3 = [(r1 + r2)103] × (0.2 × 10–3) [∵ VAB = ir]
= [(5 + 5)103] × (0.2 × 10–3) = 10 × 103 × 0.2 × 10–3 = 2
⇒ VAB = 2 + 0.3 = 2.3 V
114 When an electric field is applied across a semiconductor [NCERT Exemplar]

(a) holes move from lower energy level to higher energy level in the conduction band. 1
(b) electrons move from higher energy level to lower energy level in the conduction band.
(c) holes in the valence band move from higher energy level to lower energy level.
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(d) holes in the valence band move from lower energy level to higher energy level.
ANS: (c) When electric field is applied across a semiconductor, the electrons in the conduction band move
from lower energy level to higher energy level. While the holes in valence band move from higher energy
level to lower energy level, where they will be having more energy.
115 In the depletion region of a diode

(a) there are mobile charges.
(b) equal number of holes and elections exist, making the region neutral. 1
(c) recombination of holes and electrons has taken place.
(d) immobile charged ions do not exist.
ANS: (b)
116 The breakdown in a reverse biased p-n junction is more likely to occur due to
(a) large velocity of the majority charge carriers if the doping concentration is small.
(b) large velocity of the minority charge carriers if the doping concentration is large. 1
(c) strong electric field in a depletion region if the doping concentration is small.
(d) strong electric field in the depletion region if the doping concentration is large.
ANS: (d)
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117 A p-type semiconductor can be obtained by adding

(a) arsenic to pure silicon.
(b) gallium to pure silicon. 1
(c) antimony to pure germanium.
(d) phosphorus to pure germanium.
ANS: (b) Ga has a valency of 3.
118 In a p-type semiconductor, there is

(a) excess of one electron.
(b) absence of one electron. 1
(c) a missing atom.
(d) a donar level.
ANS: (b) Absence of one electron, creates the positive charge of magnitude equal to that of electronic
charge.
119 A 2V battery is connected across the points A and B as shown in the figure. Assuming that the resistance of 1
each diode is zero in forward bias and infinity in reverse bias, the current supplied by the battery when its
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positive terminal is connected to A is (a) 0.2 A (b) 0.4 A

(c) Zero (d) 0.1 A
ANS: (a) Since diode in upper branch is forward biased and in lower branch is reverse biased. So current
through circuit i = here rd is diode resistance in forward biasing = 0
120
Current in the circuit will be (a) 5/40 A (b) 5/50 A

(c) 5/10 A (d) 5/20 A
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ANS: (b) The diode in lower branch is forward biased and diode in upper branch is reverse biased
121
ANS: (c) When input voltage is –10 V, the diode is reverse biased and no output is obtained. On the other
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hand, when input is +10 V, the diode is forward biased and output is obtained which is +10 V
122 The I-V characteristic of a p-n junction diode is shown below. The approximate dynamic resistance of the p-
n junction when a forward bias of 2 volt is applied (a) 1 Ω (b) 0.25 Ω

(c) 0.5 Ω (d) 5 Ω
ANS: (b) The current at 2 V is 400 mA and at 2.1 V it is 800 mA. The dynamic resistance in this region.
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123
Find VAB. (a) 10 V (b) 20 V

(c) 30 V (d) None of these
ANS: (a) Diode is in forward biasing hence the circuit can be redrawn as follows
124 The ________ biasing in a p-n junction diode increases the potential barrier. 1
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ANS: reverse

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BY ARUN SINGH ( IIT DH)

1 In the given diagram, is the diode D forward or reverse biased?

ANS: The diode D is reverse biased.

2 In a transistor, doping level in base is increased slightly. How will it affect

ANS: (i) Collector current will decrease.

ANS: (i) The width of depletion layer decreases.

ANS: It has higher absorption coefficient.

ANS: Since therefore, it will decrease due to decrease in collector current.

ANS: Reverse biasing.

ANS: (i) for n-type, arsenic.

ANS: (i) Band gap (ii) Biasing

11 Why can’t transistor be used as a rectifier? 1

12 What is a hole? What is its physical significance? 1

13 Draw energy band diagram for an intrinsic semiconductor at T = 0 K. 1

14 Draw energy band diagram for an intrinsic semiconductor at T > 0 K. 1

16 What is an ideal diode? 1

17 What do you understand by a dynamic resistance of p-n junction diode. 1

18 What is internal field emission? 1

19 Why is a typical solar cell drawn in fourth quadrant? 1

21 What is a Logic gate? 1

22 Why NAND or NOR gates are called universal gates? 1

23 What happens when a forward bias is applied to a p–n junction? 1

ANS: It conducts current.

ANS: D1 is reverse biased and D2 is forward biased.

26 Distinguish between ‘intrinsic’ and ‘extrinsic’ semiconductors. 2

ANS: Intrinsic semiconductors

semiconductor crystal is electrically neutral, although nh >> ne?

ANS: In the formation of

30 Draw the circuit diagrams showing how a p–n junction diode is

ANS: The following figures show the required circuit diagrams.

When the p–n junction is forward biased

ANS: The following circuit shows the biasing of an LED.

transistor act as an amplifier?

output circuit is reverse biased.

the truth table.

(ii) Write down the output at X for the inputs A = 0, B = 0 and A = 1, B = 1.

(ii) Write down the output at X for the inputs A = 0, B = 0 and A = 1,

If this logic gate is connected to NOT gate, what will be

53 What is doping? Why is it needed? 2

ANS: (a) The deliberate addition of a desirable impurity is called doping.

54 Explain how a solar cell is fabricated. 2

60 Explain why elemental semiconductor cannot be used to make visible LEDs. 2

waveform is as shown below.

Similarly, holes being in majority in the p-type semiconductor, move towards

ANS: (i) The reverse current is not limited by the magnitude

69 (a) Describe the working of light emitting diodes (LEDs). 3

ANS: Truth Table: Refer to Ans. 14.19 (b) [NCERT Exercises]

The circuit carries out the logic operation of AND gate.

71 Write the truth table for the following combination of gates:

73 (a) Why is a photodiode operated in the reverse bias mode?

74 (a) Write the functions of three segments of a transistor.

To obtain the output characteristics,

76 What is a filter? Explain the role of capacitor in filtering. 3

Explain the following:

(i) diffusion and (ii) drift.

(i) Generation of electron-hole pairs

87 Draw a simple circuit of a CE transistor amplifier. Explain its working.

ANS: Refer to Ans. 68

90 (a) Distinguish between an intrinsic semiconductor and a p-type semiconductor. Give

So, current through D1, i1 = 0 and current through D2,

95 Output characteristics of an n–p–n transistor in CE configuration is as shown in the figure. 4

Therefore, current through 100 Ω resistance = 0.02 A