International Journal of Emerging Trends & Technology in Computer Science (IJETTCS)

Web Site: www.ijettcs.org Email: editor@ijettcs.org

Volume 3, Issue 6, November-December 2014 ISSN 2278-6856

Design and Analysis of Microwave Planar

Band Pass Filter for WiMAX Application
Avishek Das1, Avisankar Roy2*, Kushal Roy3, Amit Bhattacharyya4, Dibyendu Chowdhury5

1
Assistant Professor ,Department of ECE, Haldia Institute of Technology, Haldia,
Purba Medinipur.West Bengal, India,721657
2
Assistant Professor ,Department of ECE, Haldia Institute of Technology, Haldia,
Purba Medinipur.West Bengal, India,721657
3
Assistant Professor ,Department of ECE, Haldia Institute of Technology, Haldia,
Purba Medinipur.West Bengal, India,721657
4
Assistant Professor ,Department of ECE, Haldia Institute of Technology, Haldia,
Purba Medinipur.West Bengal, India,721657
5
Assistant Professor ,Department of ECE, Haldia Institute of Technology, Haldia,
Purba Medinipur.West Bengal, India,721657

Abstract because of their low cost, compact size, light weight,

This article presents the design and analysis of a compact size
planar microstrip band pass filter in the S-band of RF
frequency for the application of wireless communication
system. This designed structure of band pass filter with low
insertion loss is mostly suitable in WiMAX for its band
selecting and spurious rejection capability. The designed
architecture of this band pass filter is a resonating structure
that consists of slotted line capacitive and inductive load. The
development of the microstrip filter is simulated by IE3D EM
solver
Keywords: Band pass filter, WiMAX, Microwave filter,
Microstrip line
1.Introduction
The design of wireless and mobile communication system
needed high quality and small size microwave filter which
is a two port network and it control the frequency response
by providing transmission at frequencies within the pass
band and attenuation in stop band. The planar filter
structures can be fabricated using printed circuit
technology with low cost and compact size. A band pass
filter only passes the frequencies with a certain desired
band and attenuates other signals whose frequencies either
below a lower cutoff frequency or above an upper cutoff
frequency.
The passive (LC) filter works quite well at frequencies up
to a few hundred megahertz, beyond this range of
frequency the performance of the filter deviate
significantly. WiMAX (World Wide Interoperability for
Microwave Access) operates in 3.5 GHz and in realization
of such system we need a complete new transmitter and
receiver and for that a band pass filter is used at the
transmitter and receiver end. The microwave filters are
synthesized with the distributed elements rather than
lumped inductors and capacitors [1]. For low power
application strip line and microstrip filters are widely used
planar structure and easy integration with other
components on a single circuit board. For high power
requirements waveguide structure are utilized. Microstrip
line is a bimetallic structure which contains two metallic
surface separated with a small distance having a dielectric
material between them. One of the metallic surfaces is the
filter geometry and other one is the ground surface at
which the reflection of wave occurs. Stepped impedance
microstrip filters use a cascade structure of alternating
high and low impedance transmission lines. These are
much shorter than the associated guided wavelength, so as
to act as semi lumped elements. The high impedance lines
act as series inductors and the low impedance lines act as
shunt capacitors. [2]. The architecture demonstrated here
is a stepped impedance resonating structure with a slotted
section in the capacitive load. Richard’s transformation
[2][4] is used for the conversion from lumped element to
distributed elements of the filter. Here the open and short
circuited transmission line stubs are used having the
length of the order of λ/4 or λ/8. Kuroda’s identities [2]
are applied for the realization of the filter it transforms
series stubs into shunt stubs and vice – versa.
2.Design of Microstrip Band pass Filter
The design of microstrip band pass filters involves two
main steps.
(i) The first one is to select an appropriate low pass
prototype depending on the required specification. The
element values of the low pass prototype filter which are
usually normalized to make a source impedance g0 =1
and a cut off frequency Ω c =1 are then transformed to
the LC elements for the desired cut off frequency and
the desired source impedance, which is normally 50Ω
for microstrip filters.
(ii) The next main step in the design of microstrip band
pass filter is to find an appropriate microstrip

Volume 3, Issue 6, November-December 2014 Page 185

 International Journal of Emerging Trends & Technology in Computer Science (IJETTCS)
Web Site: www.ijettcs.org Email: editor@ijettcs.org
Volume 3, Issue 6, November-December 2014 ISSN 2278-6856

realization that approximate the lumped element filters. The effective dielectric constant can be found by the
In order to illustrate the design procedure for this type following formula
of three pole low pass filter specification is  0. 5
i. Relative dielectric constant (εr) = 3 r 1 r 1  h
ii. Height of substrate (h) = 1.52 mm
 re   1  12 
2 2  w
iii. Lower Cut off frequency (fcl) = 3.25 GHz
The effective wavelength is also found as
iv. Upper Cut off frequency (fcu) = 4.55 GHz

v. The loss tangent (δ) = 0.02 g 
 re
vi. The source impedance (Z0) = 50 Ω
3. Dimension of the filter
vii. The highest line impedance (ZH) = Z0L=120Ω
viii. The lowest line impedance (ZL) = Z0C=20Ω Table- 1 Dimension of the slotted line stepped impedance
band pass filter (N=3)
ix. The normalized cut off (Ωc) = 1
Characteristics Z 0C=20 Z 0=50 Z0L=120
A low pass prototype with Chebyshev response is chosen Impedance
whose elements values are [2-3]. (ohm)
g0 = g4 =1 Guided line λgc=75.26 λg0=78.7 λgL=82.6
Width (mm) 8 1
g1 = g3 = 1.0316
Microstrip line 13.19 3.82 0.6340
g 2 = 1.1474 width (W)
The electrical length for the inductors and capacitors for (mm)
microstrip structure are proportional to the respective Microstrip line 7.14 10 18.3573
inductance and capacitance of the resonators [5]. length (L)
(mm)
LZ 0
l  for inductor
Z high

CZ low
l  for capacitor
Z0
Where  the phase is constant, l is the physical length of
the resonators, Z high and Z low are the impedance of
inductive and capacitive line respectively. To calculate the
width of capacitor and inductor we use the following
formula [1-2]

For w  2
h
w 8 exp( A ) Figure-1 Layout of a 3-pole symmetric slotted line

h exp( 2 A)  2 stepped impedance microstrip band pass filter on a
substrate with εr=3 and h=1.52 mm at 3.25 GHz to 4.55
Zc r 1 r 1 0 .11 GHz
Where A   ( 0 .23  )
60 2 r 1 r 4. Simulation result
For the simulation purpose we have used Method of
For w  2 Moment based full-wave EM solver IE3D. The dimension
h
of the symmetric filter are given in Table-1
w   0 . 11 
  B  1  ln( 2 B  1)  r 1 {ln( B  1)  0 .39  }
h  2 r  r 

2
Where B  60 
Z c  r

Volume 3, Issue 6, November-December 2014 Page 186

 International Journal of Emerging Trends & Technology in Computer Science (IJETTCS)
Web Site: www.ijettcs.org Email: editor@ijettcs.org
Volume 3, Issue 6, November-December 2014
Figure-2 Full wave EM simulated performance of the
slotted stepped impedance band pass filter n=3 at 3.25
GHz to 4.55 GHz
5. Result and Discussion
The simulated filter structure and its response is shown in
Figure-1 and Figure-2 respectively. In the response graph
gain (dB) is plotted on the Y-axis and frequency (GHz) on
X-axis. From the response curve of Figure-2 it is clear that
the simulated lower cut-off frequency is 3.25 GHz and
upper cut-off frequency 4.55 GHz for this slotted stepped
impedance band pass filter. Hence this designed band pass
filter is capable of passing the frequency in the band of
3.25 GHz to 4.55 GHz and rejects all other frequencies
outside this specified frequency band. So this designed
model band pass filter can be used for WiMAX
application i.e. on 3.5 GHz.
6. Conclusion
In this article, a band pass microwave filter with slotted
stepped impedance by microstrip line with high
impedance characteristics and low impedance
characteristics has been designed. The design procedure is
simple and it can be easily and inexpensively fabricated
using common printed circuit board technology. It has
high isolation and in a compact size.
References
[1] D.M Pozar, “Microwave Engineering,” John Wiley,
III ed, 2010.
[2] Jia-Sheng Hong & M.J.Lancanter, “Microstrip filters
for RF/Microwave Application,” John Wiley & Sons,
Inc,2001.
[3] G.L.Mathaei, L.Young & E.M.T. Jones,“Microwave
filter impedance matching networks and coupling
structure,”Artech House, Dedham Mass,1980.
Volume 3, Issue 6, November-December 2014
ISSN 2278-6856
[4] Makimoto, S.Yamoshita, “Microwave Resonators
and filters.,” IEEE Trans. Wireless Communication
Vol.2,August-1986
[5] Dhirendra Kumar,Asok De, “Compact Low Pass
Filter Design for L-Band Application,”Journal of
Electromagnetic Analysis and Application
2011,3,115-117.
Authors
Mr. Avishek Das received B.E in
Electronics & Communication
Engineering and M.Tech in E&CE
(Microwave) degrees in 2008 and 2010
respectively from The University of
Burdwan, West Bengal, India. Presently
he is acting as Assistant Professor of
Electronics & Communication Engineering Department of
Haldia Institute of Technology, Haldia, West Bengal.
Mr. Avisankar Roy is working as an
Assistant Professor in the department of
Electronics & Communication
Engineering, Haldia Institute of
Technology, Haldia. He received his
B.Tech and M.Tech in Electronics &
Communication Engineering under West
Bengal University of Technology in the year of 2006 and
2009 respectively. His area of research interest includes,
Microstrip Antenna and Frequency Selective Surfaces. He
is working towards his Ph.D. degree.
Mr. Kushal Roy received his
Bachelors Degree with Honors in
Electronics and Communication
Engineering form Government
Engineering College Ujjain, M.P
India, in the year 2002, achieved his
Master’s Degree M,Phil in Instrumentation from Indian
Institute of Technology Roorkee, U.A Republic of India in
the year 2004 with nano scale instrumentation and opto
instrumentation as major fields of study. Presently he is
serving as faculty in the Department of Electronics and
communication Engineering, Haldia Institute of
Technology, Haldia, West Bengal.
Mr. Amit Bhattacharyya received M.Sc
in Electronic Science and M.Tech in Radio
Physics & Electronics degrees in 2006 and
2008 respectively from The University of
Calcutta , West Bengal, India. Presently he
is acting as Assistant Professor of Electronics &
Communication Engineering Department of Haldia
Institute of Technology, Haldia, West Bengal. He has
published National and International conference papers.
Page 187
 International Journal of Emerging Trends & Technology in Computer Science (IJETTCS)
Web Site: www.ijettcs.org Email: editor@ijettcs.org
Volume 3, Issue 6, November-December 2014 ISSN 2278-6856

Mr. Dibyendu Chowdhury is working as

an Assistant Professor in the department
of Electronics & Communication
Engineering, Haldia Institute of
Technology, Haldia. He received his B.Sc
and M.Sc in Electronics under Vidyasagar
University in the year of 2004 and 2006 respectively. He
received his M.Tech in Electronics & Communication
Engineering under West Bengal University of Technology
in the year of 2009. His area of research interest includes
VLSI and Embedded Systems. He is working towards his
Ph.D. degree.

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