PJ2N3906

PNP Epitaxial Silicon Transistor

GENERAL PURPO SE TRANSISTO R

• Collector-Emitter Voltage: VCEO = 40V . TO-92 SOT-23

• Collector Dissipation: P C (max) = 625 mW

ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃)

P in : 1. Emitter P in : 1. Base
Rating Symbol Value Unit 2. Base 2. Emitter
3. Collector 3. Collector
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 5 V ORDERING INFORMATION
Collector Current IC 200 mA
Collector Dissipation PC 625 mW Device Operating Temperature Package
Junction Temperature Tj 150 ℃ PJ2N3906CT TO-92
Storage Temperature -20℃～+85℃
T stg -55~150 ℃ PJ2N3906CX SOT-23

ELECTRICAL CHARACTERISTICS (T a = 25℃)

Characte ristic Symbol Te st Conditions Min Typ Max Uni

t
Collector-Base Breakdown Voltage BVCBO IC= 10μA , IE =0 40 V
*Collector-Emitter Breakdown Voltage BVCEO IC= 1mA , IB=0 40 V
Emitter-Base Breakdown Voltage BVEBO IE =10μA , IC=0 6 V
Collector Cut-off Curent ICEX VCE = 30V , VBE = 3V 50 nA
Base Cut-off Current IBL VCE = 30V , VBE = 3V 50 nA
*DC Current Gain hFE Ic =0.1mA, VCE =1V 60
Ic =1mA, VCE =1V 80
Ic=10mA; VCE =1V 100 300
Ic =50 mA, VCE =1V 60
Ic =100 mA, VCE =1V 30
*Collector-Emitter Saturation Voltage VCE(sat) IC= 10 mA , IB=1mA 0.25 V
IC= 50mA , IB=5mA 0.4 V
*Base-Emitter Saturation Voltage VBE(sat) IC= 10 mA , IB=1mA 0.65 0.85 V
IC= 50mA , IB=5mA 0.95 V
Output Capacitance C ob VCB =5V, IE =0 4.5 pF
f=1MHz
Current Gain Bandwidth Produce fT Ic =10 mA, VCE =20V 250 MHz
f=100MHz
Turn On Time ton Vcc =3 V, VBE =0.5V 70 ns
Ic =10 mA, IB1 =1mA
Turn Off Time toff Vcc =3V, Ic =1mA 250 ns
IB1=IB2=1 mA
*Pulse Test: Pulse Width ≤ 300μs.Duty Cycle ≤ 2%

1-3 2002/01.rev.A
 PJ2N3906
PNP Epitaxial Silicon Transistor

DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT

BASE-EMITTER SATURATION VOLTAGE OUTPUT CAPACITANCE

COLLECTOR-EMITTER SATURATION VOLTAGE

2-3 2002/01.rev.A
 PJ2N3906
PNP Epitaxial Silicon Transistor

3-3 2002/01.rev.A