Tutorial Sheet 1 (01.09.

2022)
1. An amplifier operating from +12 V and -12 V supplies provides a 5.5 V peak sine wave output (vo)
across a 100 Ω load (RL) when the input is provided with a 0.5 V peak sine wave signal (vi) from which
2.0 mA peak current (ii) is drawn. The average current in each supply is 50 mA.
a) Find the voltage gain (vo/vi), current gain (io/ii), and power gain (po/pi) expressed as ratios and in
decibels.
b) Calculate the supply power, amplifier power dissipation, amplifier power efficiency.
c) If the amplifier saturates for signals extending within 1.0 V of either supply, what is the rms value
of the largest undistorted sine-wave output available, and input needed?
[Ans: a) Voltage gain (vo/vi) = 11 V/V or 20.83 dB; Current gain (io/ii)= 27.5 A/A or 28.79 dB; Power
gain (po/pi) = 302.5 W/W or 24.81 dB;
b) Supply power = 151.25 mW; Amplifier power dissipation = 1049.25 mW; Amplifier power
efficiency = 12.6 %;
c) Largest undistorted sine wave output = 7.78 Vrms, and needed input = 0.707 Vrms]

2. Two amplifiers, A1 and A2, are given to connect in cascade between a 5 mV signal source with an
internal resistance (Rs) of 100 kΩ, and a 200 Ω load (RL). The amplifiers have voltage gain (vo/vi), input
resistance (Ri), and output resistance (Ro) as follows: for A1, 100 V/V, 100 kΩ, 10 kΩ, respectively; for
A2, 10 V/V, 10 kΩ, 1 kΩ, respectively.
Evaluate the two possible connections between the signal source (S) and the load (L), namely, S-A-B-L
and S-B-A-L. Find the voltage gain for both the connections in ratios and decibels. Which amplifier
arrangement is the best?
[Ans: For S-A-B-L connection, voltage gain = 41.67 V/V or 32.40 dB; For S-B-A-L connection, voltage
gain = 1.76 V/V or 4.93 dB; S-A-B-L connected amplifier has higher gain, hence it is the best]

3. In a pn junction diode, calculate saturation current (Is) at room temperature for the following
parameters: p-type silicon doping density (NA) = 1017/cm3 , n-type silicon doping density (ND) =
1017/cm3 , intrinsic silicon carrier concentration at room temperature (ni) = 1.5 x 1010/cm3 , hole diffusion
length (Lp) in n-type silicon = 5 µm, electron diffusion length (Ln) in p-type silicon = 10 µm, hole
diffusion coefficient (Dp) = 10 cm2/s, electron diffusion coefficient (Dn) = 18 cm2/s, and cross sectional
area (A) = 50 µm2. Also calculate the diode current (ID) for V = 900 mV forward bias voltage.
[Ans: Is = 6.84 x 10-18 A; ID = 8.44 mA]

4. For a silicon pn junction, calculate junction capacitance (Cj) for a reverse bias voltage (VR) of 2 V
and 5 V. Consider, the junction capacitance at VR = 0 V (Cj0) is 0.5 pF, and built-in voltage (V0) = 0.7
V.
[Ans: For VR = 2 V, Cj = 0.255 pF; For VR = 5 V, Cj = 0.175 pF]

5.
a) A 0.1 pF capacitance (C) is connected between the output and input terminals of an ideal voltage
amplifier (input resistance Ri = ∞, output resistance Ro = 0) with a voltage gain (Av0) of -100 V/V,
as shown in Fig.5(a). What is the equivalent capacitance at input (Cin) and output (Cout) of the
amplifier?
 b) If the amplifier is fed from a voltage source having a resistance (Rsig) of 15.75 kΩ as shown in
Fig.5(b), what is the -3 dB frequency (f3dB), DC voltage gain (vo/vsig), and unity gain frequency
(fUGB)?
c) Find out the output signal vo(t) for the following input signals, considering the ideal amplifier (Ri
= ∞, Ro = 0, Av0 = -100 V/V) and Rsig = 15.75 kΩ:
i. vsig(t) = 0.5 × sin(2π × 103 × t) V.
ii. vsig(t) = 0.5 × sin(2π × 106 × t) V.
d) Consider the amplifier has Ri = 15.75 kΩ, Ro = 0, and Av0 = -100 V/V. Find out the -3 dB frequency
(f3dB), DC voltage gain (vo/vsig), and unity gain frequency (fUGB).

Fig.5(a) Fig.5(b)

[Ans: a) Cin = 10.1 pF, Cout = 0.101 pF;

b) f3dB = 1 MHz, DC voltage gain (vo/vsig) = -100 V/V, fUGB = 100 MHz;
c) i) vo(t) = -50 × sin(2π × 103 × t) V, ii) vo(t) = -35.36 × sin(2π × 106 × t – 45o) V;
d) f3dB = 2 MHz, DC voltage gain (vo/vsig) = -50 V/V, fUGB = 100 MHz]