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org
Seminar
On
Extreme-Ultraviolet-
Lithography
Submi ed To: Submi ed By:
www.studyma a.org www.studyma a.org
 OUTLINE
Lithography
Introduction to EUVL
Basic concepts
Why do we need EUVL?
EUVL Process
Basic technology for EUV
EUV masks
All Re ective Optics
Advantages
Disadvantages
Conclusion
 WHAT IS LITHOGRAPHY
Lithography is akin to photography in that it uses light to
transfer images onto a substrate
The term lithography is derived from the words ‘lithos’
meaning stone and ‘graphy’ meaning write.
Our stone is silicon wafer and writing is done using a
photo sensitive polymer.
 INTRODUCTION
Extreme ultraviolet lithography is an advanced technology
for making microprocessors a hundred times more powerful
than those made today.
Optical projection lithography has been the lithographic
technique used in the high-volume manufacture of integrated
circuits.
The key to creating more powerful microprocessors is the
size of the light's wavelength.
 BASIC CONCEPT BEHIND
EUV
Minimum lithographic feature size = k *λ
k1: “Process complexity factor” NA
1

λ: Exposure wavelength
NA: Numerical aperture of the lens.Higher NA means smaller depth of focus.
 WHY EUVL
 EUVL is required for the continuity of Moore’s law
The number of transistors that can be placed
inexpensively on an integrated circuit doubles approximately
every two years.
EUVL is a next generation lithography technique.
 EUVL
Glass lens replaced by
mirrors….
λ= 13.5nm…
Re ective masks are to
be used.
more power…faster mp

This wafer was pa erned on a

prototype device using extreme-
ultraviolet lithography (EUVL).
 EUVL PROCESS

Laser is directed to a jet of xenon gas to produce plasma
To create the IC, light is directed to a mask.
Light re ects from the mask then through a series of mirrors
that shrinks the image down.
Projected to wafer covered with photoresist
Light hardens the photoresist.
Region not exposed remain gooey and the remaining is
hardened photoresist and exposed silicon wafer.
 BASIC TECHNOLOGY FOR
All solids, liquids, and gases
absorb 13.5nm – so system is
EUV
under vacuum
Mask must be re ective and
exceptionally defect-free

13.5nm photons generated by

plasma source

All-re ective optics

(all lens materials are
opaque)
EUV MASKS
 All-Re ective Optics
 All solids, liquids, and gases absorb 13.5nm photons
- So fused silica lenses are OUT …
- Indeed, all refracting lenses are OUT

Making EUV mirrors is no cakewalk, either …

 50 or more alternating Mo/Si layers give the mirror
its re ectivity
 Each layer is 6.7nm thick and requires atomic
precision
 Since the angle of incidence changes across
the mirror, so do the required Si layer thicknesses
Net re ectance: ~70%
 IMAGE FORMATION

 Top: EUV multilayer and absorber constituting mask

pa ern for imaging a line.
Bo om: EUV radiation re ected from the mask pa ern
is absorbed in the resist and substrate, producing
photoelectrons and secondary electrons.
These electrons increase the extent of chemical
 EUVL ADVANTAGES
 Microprocessors made by euvl are up to
to 100 times faster than today's most powerful chips
 Decrease in size of chip but the speed increases.
EUVL technology achieves good depth of focus and
linearity for both dense and isolated lines with low NA.



 Increase in storage capacity.
The low thermal expansion substrates provide good image
placement.

 EUVL DEFECTS
 Positive charging, due to ejection of photoelectrons
 Contamination deposition on the resist from out gassed
haydrocarbons, which results from EUV- or electron-
driven reactions.
No known method for repairing defects in a ML coating.

Entire process has to be carried out in vacuum.

Mirrors used are only 70% re ective.

 CONCLUSION
 EUVL will opens a new chapter in semiconductor
technology.
Successful implementation of EUVL would enable
projection lithography to remain semiconductor
industry’s pa ern technology of choice for years to
come.
Much work is to be done in order to determine
whether EUVL is ready for large scale production.
REFERENCES
www.google.com
www.wikipedia.com
www.studyma a.org
THANKS