▪

▪
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▪
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•
•
•
▪
▪
SCR: Silicon Controlled Rectifier. GTO: Gate Turn-off Thyristor. IGCT: Integrated Gate-
Commutated Thyristor. MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor.
IGBT: Insulated Gate Bipolar Transistor.
 1 𝑇
𝑋𝐷𝐶 = න 𝑥 𝑡 𝑑𝑡
𝑇 0

1 𝑇 2
𝑋𝑅𝑀𝑆 = න 𝑥 𝑡 𝑑𝑡
𝑇 0
 𝑥2
1
𝑉𝑅 𝐷𝐶 = න 311 ⋅ 𝑠𝑖𝑛 𝜔𝑡 𝑑𝜔𝑡
𝑃𝑒𝑟𝑖𝑜𝑑𝑜 𝑥1
1 𝜋
𝑉𝑅 𝐷𝐶 = න 311 ⋅ 𝑠𝑖𝑛 𝜔𝑡 𝑑𝜔𝑡
2𝜋 𝜋
2

𝑉𝑅 𝐷𝐶 = 49,49 𝑉

𝑉𝑅 𝑅𝑀𝑆 = 109,95 𝑉
•
Dispositivos semiconductores
• Existen del tipo controlados y no
controlados
• Manejan distintos niveles de tensión,
corriente.
• Pueden operar en distintos rangos de
frecuencias
•
•
•
0≤𝐷≤1
• 𝑇𝑠
• 𝑓𝑠
1
𝑓𝑠 =
𝑇𝑠
𝑉 1
= → 𝑉 = 20
10 1 − 0.5
•
𝐿
 ∞
1 𝑇
• 𝐼𝑅𝑀𝑆 = න 𝐼 𝑡
2
𝑑𝑡 = ෍ 𝐼𝑛2
𝑇 0
𝑛=1

𝐼𝑎2 − 𝐼𝑎1
2
𝑇𝐻𝐷 =
𝐼𝑎1
•

•
𝑃 = 𝑉𝑎 ⋅ 𝐼𝒂𝟏 ⋅ cos(𝜙) 𝑃 𝐼𝑎1
𝑓𝑝 = = cos(𝜙)
𝑆 𝐼𝑎
𝑆 = 𝑉𝑎 ⋅ 𝐼𝑎
𝑃𝐹 = 𝐷𝐹 ⋅ 𝐷𝑃𝐹

𝐼𝑎1 (𝑅𝑀𝑆)
𝐷𝐹 = 𝐷𝑃𝐹 = cos(𝜙1 )
𝐼𝑎(𝑅𝑀𝑆)
 𝑉𝑎𝑏 𝑉𝑎𝑐 𝑉𝑏𝑐 𝑉𝑏𝑎 𝑉𝑐𝑎 𝑉𝑐𝑏

𝑉𝑎 = 220 ⋅ 2 ⋅ 𝑠𝑒𝑛(𝜔𝑡)
2𝜋
𝑉𝑏 = 220 ⋅ 2 ⋅ 𝑠𝑒𝑛(𝜔𝑡 − )
3
4𝜋
𝑉𝑐 = 220 ⋅ 2 ⋅ 𝑠𝑒𝑛(𝜔𝑡 − )
3
60°
Topología típica de un convertidor DC/DC aislado en VE.
Esquema de diferentes convertidores en un VE