6MBP75RA060

IGBT-IPM R series 600V / 75A 6 in one-package

Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item Symbol Rating Unit

Min. Max.
DC bus voltage VDC 0 450 V
DC bus voltage (surge) VDC(surge) 0 500 V
DC bus voltage (short operating) VSC 200 400 V
Collector-Emitter voltage VCES 0 600 V
INV Collector current DC IC - 75 A
1ms ICP - 150 A
Duty=61.7% -IC - 75 A
Collector power dissipation One transistor PC - 320 W
Junction temperature Tj - 150 °C
Input voltage of power supply for Pre-Driver VCC *1 0 20 V
Input signal voltage Vin *2 0 Vz V
Input signal current Iin - 1 mA
Alarm signal voltage VALM *3 0 Vcc V
Alarm signal current IALM *4 - 15 mA
Storage temperature Tstg -40 125 °C
Fig.1 Measurement of case temperature
Operating case temperature Top -20 100 °C
Isolating voltage (Case-Terminal) Viso *5 - AC2.5 kV
Screw torque Mounting (M5) - 3.5 *6 N·m
Terminal (M5) - 3.5 *6 N·m

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit
INV Collector current at off signal input I CES VCE=600V input terminal open – – 1.0 mA
Collector-Emitter saturation voltage V CE(sat) Ic=75A – – 2.8 V
Forward voltage of FWD VF -Ic=75A – – 3.0 V
6MBP75RA060 IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit
Power supply current of P-line side Pre-driver(one unit) Iccp fsw=0 to 15kHz Tc=-20 to 100°C *7 3 - 18 mA
Power supply current of N-line side three Pre-driver ICCN fsw=0 to 15kHz Tc=-20 to 100°C *7 10 - 65 mA
Input signal threshold voltage (on/off) Vin(th) ON 1.00 1.35 1.70 V
OFF 1.25 1.60 1.95 V
Input zener voltage VZ Rin=20k ohm - 8.0 - V
Over heating protection temperature level TCOH VDC=0V, Ic=0A, Case temperature, Fig.1 110 - 125 °C
Hysteresis TCH - 20 - °C
IGBT chips over heating protection temperature level TjOH surface of IGBT chips 150 - - °C
Hysteresis TjH - 20 - °C
Collector current protection level INV IOC Tj=125°C 113 - - A
Over current protection delay time tDOC Tj=25°C Fig.2 - 10 - µs
Under voltage protection level VUV 11.0 - 12.5 V
Hysteresis VH 0.2 - - V
Alarm signal hold time tALM 1.5 2 - ms
SC protection delay time tSC Tj=25°C Fig.3 - - 12 µs
Limiting resistor for alarm RALM 1425 1500 1575 ohm
*7 Switching frequency of IPM

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit
Switching time (IGBT) ton IC=75A, VDC=300V 0.3 - - µs
toff - - 3.6 µs
Switching time (FWD) trr IF=75A, VDC=300V - - 0.4 µs

Definition of tsc

Thermal characteristics( Tc=25°C)

Item Symbol Typ. Max. Unit
Junction to Case thermal resistance INV IGBT Rth(j-c) - 0.39 °C/W
FWD Rth(j-c) - 0.90 °C/W
Case to fin thermal resistance with compound Rth(c-f) 0.05 - °C/W

Recommendable value
Item Symbol Min. Typ. Max. Unit
DC bus voltage VDC 200 - 400 V
Operating power supply voltage range of Pre-driver VCC 13.5 15 16.5 V
Switching frequency of IPM fSW 1 - 20 kHz
Screw torque Mounting (M5) - 2.5 - 3.0 N·m
Terminal (M5) - 2.5 - 3.0 N·m
6MBP75RA060 IGBT-IPM

Block diagram

Pre-drivers include following functions

a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection

Outline drawings, mm

Mass : 440g
6MBP75RA060 IGBT-IPM

Characteristics (Representative)
Control circuit

Power supply current vs. Switching frequency Input signal threshold voltage
N-side vs. Power supply voltage Tj=25°C
Tj=100°C ········· P-side ········· Tj=125°C
35 2.5

30
Power supply current Icc (mA)

2.0

Input signal threshold voltage

25

Vin (ON), Vin (OFF), (V)

1.5
20

15
1.0

10

0.5
5

0 0
0 5 10 15 20 25 12 13 14 15 16 17 18

Switching frequency fsw (kHz) Power supply voltage Vcc (V)

Undervoltage vs. Junction temperature Undervoltage hysterisis vs. Junction temperature

14 1.0

12
Undervoltage hysterisis VH (V)

0.8

10
Undervoltage VUVT (V)

0.6
8

6 0.4

4
0.2
2

0 0
20 40 60 80 100 120 140 20 40 60 80 100 120 140

Junction temperature Tj (°C) Junction temperature Tj (°C)

Alarm hold time vs. Power supply voltage Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC
3.0 200
OH hysterisis TCH,TjH (°C)
Overheating protection TCOH,TjOH (°C)

2.5
Alarm hold time tALM (msec.)

150

2.0

1.5 100

1.0

50

0.5

0 0
12 13 14 15 16 17 18 12 13 14 15 16 17 18

Power supply voltage Vcc (V) Power supply voltage Vcc (V)
6MBP75RA060 IGBT-IPM
Inverter

Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
Tj=25°C Tj=125°C
150 150
Collector current Ic (A)

100 100

Collector current Ic (A)

50 50

0 0
0 1 2 3 4 0 1 2 3 4
Collector-Emitter voltage VCE (V) Collector-Emitter voltage VCE (V)

Switching time vs. Collector current Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C Edc=300V, Vcc=15V, Tj=125°C
Switching time ton, toff (nsec.)
Switching time ton, toff (nsec.)

1000 1000

100 100

0 20 40 60 80 100 120 0 20 40 60 80 100 120

Collector current IC (A) Collector current IC (A)

Forward current vs. Forward voltage Reverse recovery characteristics trr, Irr, vs. IF
150
Reverse recovery time trr (nsec.)
Reverse recovery current Irr (A)

100
Forward current IF (A)

100

50

10

0
0 1 2 3 4 0 20 40 60 80 100 120
Foeward voltage VF (V) Foeward current IF (A)
6MBP75RA060 IGBT-IPM

Inverter

Reverse biased safe operating area

Transient thermal resistance Vcc=15V, Tj <=125°C
750

675
Thermal resistance Rth(j-c) (°C/W)

1
600

Collector current Ic (A)

525

450

375
0.1
300

225

150

75

0.01 0
0.001 0.01 0.1 1 0 100 200 300 400 500 600 700
Pulse width Pw (sec.) Collector-Emitter voltage VCE (V)

Power derating for IGBT (per device) Power derating for FWD (per device)
350 140
Collector power dissipation Pc (W)

Collector power dissipation Pc (W)

300 120

250 100

200 80

150 60

100 40

50 20

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Case temperature Tc (°C) Case temperature Tc (°C)

Switching loss vs. Collector current Switching loss vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C Edc=300V, Vcc=15V, Tj=125°C
10 10
Switching loss Eon,Eoff,Err (mJ/cycle)
Switching loss Eon,Eoff,Err (mJ/cycle)

8 8

6 6

4 4

2 2

0 0
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Collector current Ic (A) Collector current Ic (A)
6MBP75RA060 IGBT-IPM

Overcurrent protection vs. Junction temperature

Vcc=15V
200
Overcurrent protection level Ioc (A)

160

120

80

40

0
0 20 40 60 80 100 120 140
Junction temperature Tj (°C)