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SOLID AND SEMICONDUCTOR DEVICES
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20 Questions

1. Which of the following statements is incorrect for the depletion region of a diode?

Recombination of holes and electrons has

A B There the mobile charges exist.
taken place.

Equal number of holes and electrons exist,

C D None of these
making the region neutral.

2. Potential barrier developed in a junction diode opposes the flow of

A majority carriers only B holes in p region

C minority carrier in both regions only D majority carriers only

3. The breakdown in a reverse biased p-n junction diode is more likely to occur due to

large velocity of the minority charge

strong electric field in a depletion region if
A carriers if the doping concentration is B
the doping concentration is small
small

large velocity of the minority charge

C carriers if the doping concentration is D none of these
large

4. In a half wave rectifier circuit operating from 50 Hz mains frequency, the fundamental
frequency in the ripple would be

A 25 Hz B 100 Hz

C 70.7 Hz D 50 Hz

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5. If the energy of a photon of sodium light (A = 589 nm) equals the band gap of
semiconductor, the minimum energy required to create hole electron pair

A 1.5 eV B 3.2 eV

C 1.1 eV D 2.1 eV

6. The circuit has two oppositely connected ideal diodes in parallel.

What is the current flowing in the circuit?

A 1.33A B 2.0 A

C 2.31A D 1.73A

7. At absolute zero, Si acts as a

A Semiconductor B Non of these

C conductor D Insulator

8. If a small amount of antimony is added to germanium crystal

there will be more free electrons than

A none of these. B
holes in the semiconductor,

C it becomes a p-type semiconductor D its resistance is increased

9. n an unbiased p-n junction, holes diffuse from the p-region to n-region because

they move across the junction by the hole concentration in p-region is more as
A B
potential difference compared to u-region.

C all of these D free electrons in the n-region attract them

10. In reverse biasing:

A In reverse biasing: B depletion layer resistance increases

C potential barrier across junction increases D no current flows

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11. In intrinsic semiconductor at room temperature, the number of electrons and holes are:

A different B infinite

C zero D same

12.

A (a) B (c)

C (d) D (b)

13. In full wave rectifier, input a.c. current has a frequency v. The output frequency of current is
:

A 2V B V/2

C V D NONE

14. A p-type semiconductor is:

A positive B negative

C uncharged

15. Which one of the following statement is false?

A substitution impurity in donor and

Mobility of charge carriers equals its
A average speed v divided by the applied
electric field E.
acceptor atoms does not cause any
B
disturbances in the crystal lattice of
semiconducting material.

In an n-type semiconductor, the free

Each donor atom contributes two free
C electrons concentration approximately D
electrons to semiconducting crystal lattice.
equals the density of donor atoms

16. An electron in conduction band

Has a higher energy than an electron in

A Is located near the top of the crystal B
the valence band

C Has no charge D Is bound to its parent atom

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17. A p-type semiconductor has an acceptor density of 1020 atoms/m3 and intrinsic
concentration of 2.5×1019 m-1 at 300K. The electron concentration in this p-type
semiconductor is

A 62.5 x 1018 B 6.25 x 1018

C 62.5 x 1019 D 6.25 x 1019

18. The I-V characteristics of a junction diode is of the form

A (d) B (a)

C (b) D (c)

19. In a p-type semiconductor, the acceptor valence band is

close to the valence band of the host above the conduction band of the host
A B
crystal crystal

below the conduction band of the host close to conduction band of the host
C D
crystal crystal

20. The mobility of free electrons is greater than that of free holes because

they require low energy to continue their

A B they are light
motion

C they carry negative charge D they carry negative charge

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Answer Key

1.b 2.a 3.c 4.d

5.d 6.d 7.d 8.b

9.b 10.c 11.d 12.c

13.a 14.c 15.d 16.b

17.b 18.d 19.a 20.b

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