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Purification of Silicon
Purification of Silicon
Purification of Silicon
The deserts of Arizona are home to Intel's Fab 32, a $3billion factory that's
performing one of the most complicated electrical engineering feats of our time.
It's here that processors with components measuring just 45 millionths of a millimetre
across are manufactured, ready to be shipped out to motherboard manufacturers all
over the world.
Creating these complicated miniature systems is impressive enough, but it's not the
processors' diminutive size that's the most startling or impressive part of the process.
We've taken an in-depth look at Intel's manufacturing method and distilled the whole
process into 10 stages. So, to find out how sandcastles become Core i7 processors,
read on – and prepare to be amazed.
To extract the element silicon from the silica, it must be reduced (in other words, have
the oxygen removed from it). This is accomplished by heating a mixture of silica and
carbon in an electric arc furnace to a temperature in excess of 2,000°C.
The carbon reacts with the oxygen in the molten silica to produce carbon dioxide (a
by-product) and silicon, which settles in the bottom of the furnace. The remaining
silicon is then treated with oxygen to reduce any calcium and aluminium impurities.
The end result of this process is a substance referred to as metallurgical-grade silicon,
which is up to 99 per cent pure.
This is not nearly pure enough for semiconductor manufacture, however, so the next
job is to refine the metallurgical-grade silicon further. The silicon is ground to a fine
powder and reacted with gaseous hydrogen chloride in a fluidised bed reactor at
300°C to give a liquid compound of silicon called trichlorosilane.
Impurities such as iron, aluminium, boron and phosphorous also react to give their
chlorides, which are then removed by fractional distillation. The purified
trichlorosilane is vaporised and reacted with hydrogen gas at 1,100°C so that the
elemental silicon is retrieved.
During the reaction, silicon is deposited on the surface of an electrically heated ultra-
pure silicon rod to produce a silicon ingot. The end result is referred to as electronic-
grade silicon, and has a purity of 99.999999 per cent.
To turn it into a usable material, the silicon must be turned into single crystals that
have a regular atomic structure. This transformation is achieved through the
Czochralski Process. Electronic-grade silicon is melted in a rotating quartz crucible
and held at just above its melting point of 1,414°C.
A tiny crystal of silicon is then dipped into the molten silicon and slowly withdrawn
while being continuously rotated in the opposite direction to the rotation of the
crucible. The crystal acts as a seed, causing silicon from the crucible to crystallise
around it. This builds up a rod – called a boule – that comprises a single silicon
crystal.
The diameter of the boule depends on the temperature in the crucible, the rate at
which the crystal is 'pulled' (which is measured in millimetres per hour) and the speed
of rotation. A typical boule measures 300mm in diameter.
The wafers are just thick enough to allow them to be handled safely during
semiconductor fabrication. 300mm wafers are typically 0.775mm thick. Sawing is
carried out using a wire saw that cuts multiple slices simultaneously, in the same way
that some kitchen gadgets cut an egg into several slices in a single operation.
Silicon saws differ from these kitchen tools in that the wire is constantly moving and
also carries with it a slurry of silicon carbide, the same abrasive material that forms
the surface of 'wet-dry' sandpaper. The sharp edges of each wafer are then smoothed
down to prevent the wafers from chipping during later processes.