AOT292L/AOB292L/AOTF292L

TM
100V N-Channel AlphaSGT

General Description Product Summary

• Trench Power AlphaSGTTM technology VDS 100V

• Low RDS(ON) ID (at VGS=10V) 105A
∗
• RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.1mΩ )
RDS(ON) (at VGS=6V) < 5.3mΩ (< 4.9mΩ ∗)

Applications 100% UIS Tested

100% Rg Tested
• Synchronous Rectification for power supply
• Ideal for boost converters

Top View
TO-263 D
TO-220 TO-220F
D

G
S S S
D S G
D
G G
AOT292L AOTF292L AOB292L

Orderable Part Number Package Type Form Minimum Order Quantity

AOT292L TO-220 Tube 1000
AOTF292L TO-220F Tube 1000
AOB292L TO-263 Tape & Reel 800

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol AOT(B)292L AOTF292L Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 105 70
ID
Current G** TC=100°C 82 50 A
C
Pulsed Drain Current IDM 420
Continuous Drain TA=25°C 14.5
IDSM A
Current TA=70°C 11.5
C
Avalanche Current IAS 60 A
C
Avalanche energy L=0.1mH EAS 180 mJ
VDS Spike 10µs VSPIKE 120 V
TC=25°C 300 47
B
PD W
Power Dissipation TC=100°C 150 23
TA=25°C 2.1
A
PDSM W
Power Dissipation TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol AOT(B)292L AOTF292L Units
A
Maximum Junction-to-Ambient t ≤ 10s 15 °C/W
AD RθJA
Maximum Junction-to-Ambient Steady-State 60 °C/W
Maximum Junction-to-Case Steady-State RθJC 0.5 3.2 °C/W

* Surface mount package TO263

** Package limited for TO220 & TO263

Rev.2.0: March 2016 www.aosmd.com Page 1 of 7

 AOT292L/AOB292L/AOTF292L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 V
VDS=100V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.3 2.8 3.4 V
VGS=10V, ID=20A 3.7 4.5
mΩ
TO220/TO220F TJ=125°C 6.1 7.4
VGS=6V, ID=20A
TO220/TO220F 4.2 5.3 mΩ
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TO263 3.3 4.1 mΩ
VGS=6V, ID=20A
TO263 3.8 4.9 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 90 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 1 V
G
Maximum Body-Diode Continuous Current(TO220/TO263) 105 A
IS
Maximum Body-Diode Continuous Current(TO220F) 50 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 6775 pF
Coss Output Capacitance VGS=0V, VDS=50V, f=1MHz 557 pF
Crss Reverse Transfer Capacitance 32 pF
Rg Gate resistance f=1MHz 0.4 0.8 1.2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 90 126 nC
Qg(4.5V) Total Gate Charge 40 60 nC
VGS=10V, VDS=50V, ID=20A
Qgs Gate Source Charge 24 nC
Qgd Gate Drain Charge 13.5 nC
tD(on) Turn-On DelayTime 20 ns
tr Turn-On Rise Time VGS=10V, VDS=50V, RL=2.5Ω, 11.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 48 ns
tf Turn-Off Fall Time 10 ns
trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs 50 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 380 nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.2.0: March 2016 www.aosmd.com Page 2 of 7

 AOT292L/AOB292L/AOTF292L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V 6V 4.5V VDS=5V
80 80

60 60
ID (A)

ID (A)
40 4V 40
25°C
125°C
20 20

VGS=3.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS (Volts)
Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

8 2.2

Normalized On-Resistance 2

6 VGS=10V
1.8
ID=20A
RDS(ON) (mΩ)

VGS=6V 1.6
4
1.4
VGS=10V
VGS=6V
1.2 ID=20A
2
1

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

12 1.0E+02
ID=20A
10 1.0E+01

1.0E+00 125°C
8 125°C
RDS(ON) (mΩ)

IS (A)

1.0E-01
6
1.0E-02 25°C
4
1.0E-03
25°C
2
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
(Note E) (Note E)

Rev.2.0: March 2016 www.aosmd.com Page 3 of 7

 AOT292L/AOB292L/AOTF292L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 9000
VDS=50V
ID=20A
7500 Ciss
8

Capacitance (pF)
6000
VGS (Volts)

6
4500
4
3000

2
1500 Coss
Crss
0 0
0 20 40 60 80 100 0 20 40 60 80 100

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 1000
TJ(Max)=175°C
10µs TC=25°C
100.0 RDS(ON) 10µs 800
limited 100µs
Power (W)
ID (Amps)

10.0 DC 1ms 600

10ms
1.0 400
TJ(Max)=175°C
TC=25°C
0.1 200

0.0 0
0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) Pulse Width (s)
VGS> or equal to 6V Figure 10A: Single Pulse Power Rating Junction-to-
Figure 9A: Maximum Forward Biased Safe Case for TO220 & TO263 (Note F)
Operating Area for TO220 & TO263 (Note F)

1000.0 1000
TJ(Max)=175°C
10µs TC=25°C
100.0 RDS(ON) 800
limited 100µs
Power (W)
ID (Amps)

10.0 1ms 600

10ms
DC
1.0 100ms 400
TJ(Max)=175°C 1s
TC=25°C
0.1 200

0.0 0
0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
VGS> or equal to 6V Figure 10B: Single Pulse Power Rating Junction-to-
Figure 9B: Maximum Forward Biased Safe Case for TO220F (Note F)
Operating Area for TO220F (Note F)

Rev.2.0: March 2016 www.aosmd.com Page 4 of 7

 AOT292L/AOB292L/AOTF292L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

350 120

300
100
Power Dissipation (W)

250

Current rating ID (A)

80
200
60
150
40
100

50 20

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TCASE (°C) TCASE (°C)
Figure 11A: Power De-rating for TO220 & TO263 (Note Figure 12A: Current De-rating for TO220 & TO263
F) (Note F)
50 100

40 80
Power Dissipation (W)

Current rating ID (A)

30 60

20 40

10 20

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TCASE (°C) TCASE (°C)
Figure 11B: Power De-rating for TO220F (Note F) Figure 12B: Current De-rating for TO220F
(Note F)

100000
TA=25°C
10000

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000

Pulse Width (s)

Figure 13: Single Pulse Power Rating Junction-to-Ambient (Note H)

Rev.2.0: March 2016 www.aosmd.com Page 5 of 7

 AOT292L/AOB292L/AOTF292L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
ZθJA Normalized Transient

D=Ton/T In descending order

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1 RθJA=60°C/W

0.1

PDM
0.01
Single Pulse Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance (Note H)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=0.5°C/W
1

0.1 PDM
Single Pulse

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 15A: Normalized Maximum Transient Thermal Impedance for TO220 & TO263 (Note F)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=3.2°C/W

0.1

PDM
0.01 Single Pulse
Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 15B: Normalized Maximum Transient Thermal Impedance for TO220F (Note F)

Rev.2.0: March 2016 www.aosmd.com Page 6 of 7

 AOT292L/AOB292L/AOTF292L

Figure
GateA: Charge
Gate Charge Test Circuit
Test Circuit & Waveforms
& Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Figure B: Resistive Switching Test Circuit & Waveforms
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Figure C: UnclampedInductive
Unclamped InductiveSwitching
Switching (UIS) Test
TestCircuit
Circuit&&Waveforms
Waveforms
L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Figure
DiodeD: Recovery
Diode Recovery Test Circuit
Test Circuit & Waveforms
& Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.2.0: March 2016 www.aosmd.com Page 7 of 7