Match List (Cireuit) with List-11 (Property) ‘and select the correct answer using the codes given below the lists : List List & R-C coupled single- 1. Beta multiplier stage amplifier oO Emitter follower 2. Constant current. souree « C. Common base 3. Very high input O wroiter impedance . Darlington amplifier4. Phase inverter with voltage gain Codes: A B Aes 4 m4 3 dA).3 4 3 ns wwe eS we wedIn the circuit shown below, if R, >> R, and the impulses can completely saturate transistor Q,, then the output voltage V, will be &) -In the cireuit shown, own Q) T,-9 aa 5 : 40k Si Transistor = B= 100 Tc ? ‘Vae= 0.7 volts i the transistor is biased at (a) OmA &) 5 mA (43.9 mA @ o \™ Te a soPnel?The condition to be satisfied to prevent thermal runaway in a transistor amplifier where (P.=Power dissipated at Collector, 7; = Junction temperature, T, = Ambient temperature, Q = Thermal resistance) is Po SL 8P, 1 @ m3 7o jon c 100kQ hy, = 30 Caner m crf ., 26 5V Silicon transistor I _ rare e SK 266CE configuration is the most preferred transistor configuration when used as a switch because it (a) requires only one power supply PF requires low voltage or current © is easily understood by every one (@ has small Togo:The thermal runaway in a CE transistor ®+ amplifier can be prevented by biasing the transistor in such a manner that Ve ©) Vou“. Wee Veg < Mee Vv, © Veg =—$2 @ Vog =0A common emitter amplifier circuit is shown in the given figure‘An amplifier circuit 4 : . figure : is shown in the given fp, y2 y 8v AWG +12 ‘The voltage gain (Vo! Vs) is : (a) 4/3.33 (b) 100 ve © 150 (a) 160Thermal runway will take place if the quiescent point is such that 1 a) Ver >5Vee (©) Vor < Voc © Vor <2Voq @ Vor< 5 Voc" Ct revenky)In a junction transistor biased fo ~ at emitter current ‘I,’ and collector «7 °*8ioy the transconductance ‘g,’ is ents (a) Tal, OY al fer © IT, @ If,If R, is the source resistance, th, resistance of an emitter- follower simplified hybrid model would be e+ R, ) y+ R, 1+h, h, 1 1 © R, + @ >- fe de © OUutpy: Using the ®Ina transistor amplifier, the reverse current I... ef Doubles for every 10° C rise ; n temperature Saturation (b) Doubles for every 1 °C rise in temperature (©) Increases linearly with temperature (a) Doubles for every 5°C rise in temperature @sist I Listir A. Hybrid model ® 1. Microwave im C. Sparameter@) 3, Low feat D. Bbers-Moll model 4. High occlu Codes : i A oe 4 ) 3 wor’ wt on kw HHNeHO yvwyeHnvnyeFor transistor amplifier with self-biasing @ network, the following componets are used: R, =4kQ, Ry =4kQand R, =1ka p =e) The approximate value of the stability factor ‘S’ will be (a) 4 Nes © 2 (@) 15 vec 4 ee i@)726 14 /p) Gh aeIn the circuit shown in the figure, if Ry, = Re = 1KQ, then the value of Vo will be BV V=0 Given Ry= R= 1K (a) 4.55 V or 5V @1Vv (a) zero Ik 71)The approximate value of input impedance of a common emitter amplifier with emitter resistance R, is given by (@) bh, +AR, OS, + (1 +h) R, © h, @ (+h) R,Match List-I (Transistor parameter) with List-IL (Typical value) and select the correct answer using the codes given below the lists: List-l List It 6 — Ae iy 1. 80kO. Bx, 2 1k © r, 3 1009 The Do “4. 100 pP 5. 3 pF Codes : A B PHS 2 Le 2 pot 3 w@ 3 ‘wr 2 D 4, 5 4 5A common emitter transistor amplifier has a @o> collector load of 10kQ.. If its h;, = 1008@% and h,, =2kQ(h,, =h,, *0), the voltage ampli- fication of the amplifier is nearly equal to G@y500 (b) 200 (c) 100 (da) 50 o (7 fo K i. 2aThe Collector and Emitter current levels for 4 transistor with Common base de current 821? of 0.99 and base current of 20pnA ar? respectively, ; QO 2 mA and 1.98 mA QBY 1.98nA and 2 mA (1.98 mA and 2 mA 9 2 mA and 1.98pA Teeseinv a ng of a0 IC in BJT is done by the ge pias! *piasiDs scheme. . soo jv atial-divider biasing scheme ote @: il piasing scheme cust ent mirror biasing scheme collector ‘to base feedback biasing scheme @ ee ers ee ere eHpissing 8 USeU 1 LauoloWws aiupuuers to 1, Stabilize the operating point against temperature variations. 3, Place the operating point in the linear region of the characteristics. 3,-Make a,8 and I,, of the transistor independent of temperature variations. 4, Reduce distortion and increases dynamic range. ; OMA, 2, 8 and 4 (b) 1, 2 and 4 only © 1,2 and 3 only (@) 2, 3 and 4 onlyWhich of the transistor models is most preferred for the analysis of a transistor circuit ) both at mid-band and at high frequencies ? (a) h-parameter model Ae) y-parameter model /®) s-parameter model (AT hybrid x- modelOperating point shift can occiur in an amplifier aD due to which one of the following ? (a) Input frequency variation (b) Noise at the input (©) Parasitic capacitances Wr Power supply fluctuationConsider the following statements : Bias stabilization in a BJT circuit is vey important, because it L 2. 3, Provides high voltage and current gait ensures large bandwidth of the amplifie ‘eps the operating point unchanged #i change of temperature. 2 Which of the above statement(s) islare core!” @) Land 2 (b) 2 and 3 Vor only (@ 1 and 3PP empliior shown i — ‘he am in the § : fit pg lower cut-off frequency denen ee son ct of the following? u : @) Cy Ce internal junction capacit ce Ge, pacitances of {Strong wiring’ capacitance (C,), ©, ~~ Bln Oe Ce @ C, C, only 25Cascode amplifiers when compared with a simple common-emitter amplifier provide which of the following ? (a) Higher voltage gain and same bandwidth qh Same voltage gain but higher bandwidth () No change in either voltage gain or bandwidth (@ Voltage gain less than one but bandwidth equal to f,. — ow a. Kis Th = Fae ce jv» Bb)Which of the following features are offered by tee a bipolar junction transistor amplifier in Darlington connection ? 1. High voltage gain 2. High input impedance. 3. High current gain — Select the correct answer using the code given below : @) 1 and 2 only WF 2 ana 3 only © Land 8 only (@ 1, 2and 3nin For a CE amplifier, d.c. load line is draw: Which one of the following plots ? Gs) £(R,+R,) I, versus V,, for a given value of (Re and V, oO Ve eee Ee _ =e & E Spt I Vicon Vee for a given value of @,+R,) and V, Oo 1, eine Ver for a given value of I, w I, versus Vou for a given value of I,Consider the following statements : The basic purpose of bias stabilization in a transistor circuit is to i increase the voltage and current gain of the amplifier ; ake the operating point of the transistor independent of temperature variation of the transistor make the operating point independent of the replacement of the same type, Ge or Si. Which of the statements given above are correct ? (a) 1 and 2 only ee and 3 only © 1 and 3 only @ 1, 2ana3‘Match List-I (Electronic Cireuit) with List-I (Characteristic) and select the correct answer using the code given below the lists : List List A. CE OY 1. The circuit intro- duces a phase inversion of 180°, B. CB ® 2 ireuit is rarely ©. COG) The name, emitter follower is also used for the circuit D. Darlington Pair 4. The circuit consists of two circuits connected in enseado Codes: Bc D tt 28 4 m2 13 4 @2 14 8 @i 2 4 3ider the following parameters ofa hy sane uit of BIT : equivalent cire t 1. Transconductance (g,.) tne kelve 2 of 3. hhyyy ; Which of the above parameters vary with temperature in similar manner (all of them decrease or all of them increase)? Select the, correct answer using the code given below: US Only 1 and 2 () Only 2 and 3 © Only 1-and 3 (@) 1, 2and3What is the phase shift between the input and GH output voltage in a common-base small signal amplifier (assuming ideal coupling and bypass capacitors) ? (a) 180° (b) —180° US 0° (@) None of the aboveThe slew rate of an amplifier is defined as the (A) highest frequency at which the output can change without distortion the highest possible rate of change of the output voltage with respect to time © the slowest rate of change of the input voltage allowable in an RC-coupled amplifier o the rate of change of the bias current of the differential amplifier as a function of the input differential voltage.An ideal op-amp has the characteristics of an idegl eyaltaze controlled voltage source (B) voltage controlled current source (C) current controlled voltage source (D) current controlled current sourceIf the Op-Amp has the following te characteristics : QA R, = 2.4 =0,Ry =0 @B) R, =0,A=~,Ry =0 @) 2, =0,4=2,Ro ==Assume that the op-amp of the figure is ideal. If V; is a triangular wave, then V, will be R 0 Vy, sil ecxite wave @®) triangular wave (© parabolic wave (@) sine waveIn the op-Amp circuit shown below Sy (Assume ideal op-amp) the value of y, will Ya > 2S 422. be: at — 22teLe . sp 8 r “[+! Ba OSV: Vy a + 22k or cd Ta8S «oF Hy ae et foal 22 he (A) vy, = +57 ®) v, =-sV go y, =0V @) v,=-2V Tar 47 Yo weet 6 ae Q= ee as 45 -Ue NI