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LED Bar Design
LED Bar Design
S-40ABMUD
◆Mechanical Specification:
3.1
3.1
22
Dimension
●Chip size: 22milx40mil(560±38μm×1020±38μm)
●Thickness:5.9mil (150± 15μm)
●P bonding pad:3.1mil (80± 10μm)
5.9
●N bonding pad:3.1mil (80± 10μm)
Metallization
●Topside P electrode:Au
●Topside N electrode:Au
Note:
●GaN LED chip is an electrostatic sensitive device,so ESD protection during chip handling is recommended.
●The wavelength span is 2.5nm,the dominant wavelength maintains a tolerance of ±1.0nm.
●All measurements are done with San’an electro-optical testing equipment.
●Radiant flux measurement allows a tolerance of±10%.
●Customer’s special requirments are also welcome.
◆Characteristic Curves:
Fig.1-Relative Luminous Intensity vs. Forward Current Fig.2-Forward Current vs. Forward Voltage
Fig.3-Relative Intensity (@120mA) vs. Ambient Fig.4- Forward Voltage (@120mA) vs. Ambient
Temperature Temperature
Fig.5- Dominant Wavelength (@120mA) vs. Ambient Fig.6- Maximum Driving Forward DC Current vs.
Temperature Ambient Temperature ( Derating based on Tj max=125℃)