GaN LED

S-35EBMUD-H

◆ Product characters： ◆ Applications：

● Super high brightness with long life. ● Lighting
● All the chips are 100% tested and sorted. ● Backlight
● High uniformity with wavelength and brightness. 34

◆ Mechanical Specification：
Dimension 2.9

2.9
21
● Chip size: 21mil×34mil (533±25.4μm×864±25.4μm)
● Thickness: 7.9mil (200 ± 15μm)
● P bonding pad: 2.9mil (75 ± 10μm)
● N bonding pad: 2.9mil (75 ± 10μm) P-electrode
P-electrode N-electrode
N-electrode
Metallization
● Topside P electrode: Au

7.9
● Topside N electrode: Au
Reflector
Unit:mil
◆ Electro-optical Characteristics at 22℃：

Parameter Symbol Condition Min Typ Max Unit

Vf1 If =120mA 2.8 3.2 V

Forward voltage
Vf4 If =1μA 2.0 2.5 V

Reverse current Ir Vr=-7V 0 1 μA

Dominant wavelength λd If =120mA 447.5 460 nm

Spectral half-width ∆λ If =120mA 16 nm

I210 210 230

Radiant flux PO If =120mA mW
I230 230 250

Note：
● GaN LED chip is an electrostatic sensitive device,so ESD protection during chip handling is
recommended.
● The wavelength span is 2.5nm，the dominant wavelength maintains a tolerance of ±1.0nm.
● All measurements are done with San’an electro-optical testing equipment.
● Radiant flux measurement allows a tolerance of ±10%.
● Customer’s special requirments are also welcome.

Tel: 0592-5937000 5937001 Fax: 0592-5937060 5937019

Website: www.sanan -e. corn Email: marketing@sanan-e.com Add: #1721-1725，Lvling Road. 361009-Xiamen.PRC

Super high LED specification RevA.2017 E1

 GaN LED
S-35EBMUD-H

◆ Absolute Maximum Ratings：

Parameter Symbol Condition Rating Unit
Forward DC current If Ta = 22℃ ≤240 mA
Junction temperature Tj ---- ≤125 ˚C
chip -40~+85 ˚C
Storage temperature Tstg chip-on-tape/storage 0~40 ˚C
chip-on-tape/transportation -20~+65 ˚C
Temperature during packaging ---- ---- 280(<10s) ˚C
Note：
● Maximum ratings are package dependent.The above maximum ratings were determined using a Printed
Circuit Board(PCB) without an encapsulant.Stresses in excess of the absolute maximum ratings such as
forward current and junction temperature may cause damage to the LED.
● The LED is not designed to be driven in reverse bias, we suggest it should be operated under.

◆ Characteristic Curves：
Fig.1-Relative Luminous Intensity vs. Forward Current Fig.2-Forward Current vs. Forward Voltage

Fig.3-Relative Intensity (@120mA) vs. Ambient Temperature Fig.4-Forward Voltage (@120mA) vs. Ambient Temperature

Fig.5-Dominant Wavelength (@120mA) vs. Ambient Fig.6-Maximum Driving Forward DC Current vs. Ambient
Temperature Temperature ( Derating based on Tj max=125℃)

Tel: 0592-5937000 5937001 Fax: 0592-5937060 5937019

Website: www.sanan -e. corn Email: marketing@sanan-e.com Add: #1721-1725，Lvling Road. 361009-Xiamen.PRC

Super high LED specification RevA.2017 E1