FDMC8884 N-Channel Power Trench® MOSFET

October 2010

FDMC8884
N-Channel Power Trench® MOSFET
30 V, 15 A, 19 mΩ
Features General Description
„ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
„ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A
been especially tailored to minimize the on-state resistance. This
„ High performance technology for extremely low rDS(on) device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
„ Termination is Lead-free and RoHS Compliant
Battery Packs.

Application
„ High side in DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook

Top Bottom

Pin 1
G D 5 4 G
S
S
S D 6 3 S

D D 7 2 S
D
D D 8 1 S
D

MLP 3.3x3.3

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 15
-Continuous (Silicon limited) TC = 25 °C 24
ID A
-Continuous TA = 25 °C (Note 1a) 9.0
-Pulsed 40
EAS Single Pulse Avalanche Energy (Note 3) 24 mJ
Power Dissipation TC = 25 °C 18
PD W
Power Dissipation TA = 25 °C (Note 1a) 2.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 6.6
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDMC8884 FDMC8884 MLP 3.3x3.3 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDMC8884 Rev.E2
 FDMC8884 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 μA, referenced to 25 °C 22 mV/°C
ΔTJ Coefficient
VDS = 24 V, VGS = 0 V 1
IDSS Zero Gate Voltage Drain Current μA
TJ = 125 °C 250
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.4 1.9 2.5 V
ΔVGS(th) Gate to Source Threshold Voltage
ID = 250 μA, referenced to 25 °C -6 mV/°C
ΔTJ Temperature Coefficient
VGS = 10 V, ID = 9.0 A 16 19
rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 7.2 A 22 30 mΩ
VGS = 10 V, ID = 9.0 A, TJ = 125 °C 22 30
gFS Forward Transconductance VDD = 5 V, ID = 9.0 A 24 S

Dynamic Characteristics
Ciss Input Capacitance 513 685 pF
VDS = 15 V, VGS = 0 V,
Coss Output Capacitance 110 150 pF
f = 1 MHz
Crss Reverse Transfer Capacitance 76 115 pF
Rg Gate Resistance 1.4 2.1 Ω

Switching Characteristics
td(on) Turn-On Delay Time 6 12 ns
tr Rise Time VDD = 15 V, ID = 9.0 A, 2 10 ns
td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 15 27 ns
tf Fall Time 2 10 ns
Total Gate Charge VGS = 0 V to 10 V 10 14 nC
Qg(TOT)
Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V 5.0 7.0 nC
Qgs Total Gate Charge ID = 9.0 A 1.8 nC
Qgd Gate to Drain “Miller” Charge 2.2 nC

Drain-Source Diode Characteristics

VGS = 0 V, IS = 9.0 A (Note 2) 0.86 1.2
VSD Source to Drain Diode Forward Voltage V
VGS = 0 V, IS = 1.6 A (Note 2) 0.76 1.2
trr Reverse Recovery Time 13 18 ns
IF = 9.0 A, di/dt = 100 A/μs
Qrr Reverse Recovery Charge 3 10 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.

a. 53 °C/W when mounted on b.125 °C/W when mounted on

a 1 in2 pad of 2 oz copper a minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 24 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4 A .
©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDMC8884 Rev.E2
 FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
40 4.0
VGS = 10 V PULSE DURATION = 80 μs VGS = 3 V PULSE DURATION = 80 μs

DRAIN TO SOURCE ON-RESISTANCE

DUTY CYCLE = 0.5% MAX 3.5 DUTY CYCLE = 0.5% MAX

30
ID, DRAIN CURRENT (A)

VGS = 4 V 3.0
VGS = 4.5 V VGS = 3.5 V VGS = 4 V

NORMALIZED
VGS = 6 V 2.5
20
2.0
VGS = 3.5 V VGS = 4.5 V
1.5
10
1.0
VGS = 3 V VGS = 6 V VGS = 10 V
0 0.5
0 1 2 3 0 10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.6 80
ID = 9.0 A PULSE DURATION = 80 μs
DRAIN TO SOURCE ON-RESISTANCE

ID = 9.0 A

SOURCE ON-RESISTANCE (mΩ)

VGS = 10 V 70 DUTY CYCLE = 0.5% MAX
1.4
60
rDS(on), DRAIN TO
NORMALIZED

1.2
50

1.0 40
TJ = 125 oC
30
0.8
20
TJ = 25 oC
0.6 10
-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On- Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

40 100
PULSE DURATION = 80 μs
IS, REVERSE DRAIN CURRENT (A)

VGS = 0 V
DUTY CYCLE = 0.5% MAX
10
30
ID, DRAIN CURRENT (A)

TJ = 150 oC
VDS = 5 V
1
TJ = 25 oC
20
0.1
TJ = 150 oC TJ = 25 oC
10
0.01
TJ = -55 oC TJ = -55 oC

0 0.001
1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

©2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDMC8884 Rev.E2
 FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

10 1000
VGS, GATE TO SOURCE VOLTAGE (V)

ID = 9.0 A Ciss

CAPACITANCE (pF)
VDD = 15V
6 Coss
VDD = 10 V
VDD = 20 V
4

100 Crss
2
f = 1 MHz
VGS = 0 V
0 50
0 3 6 9 12 0.1 1 10 30
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

20 30
IAS, AVALANCHE CURRENT (A)

ID, DRAIN CURRENT (A)

10
20

VGS = 10 V
TJ = 25 oC

TJ = 100 oC
10
Limited by Package VGS = 4.5 V

TJ = 125 oC o
RθJC = 6.6 C/W
1 0
0.01 0.1 1 10 25 50 75 100 125 150
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C)
o

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Case Temperature

100 1000
P(PK), PEAK TRANSIENT POWER (W)

VGS = 10V SINGLE PULSE

ID, DRAIN CURRENT (A)

10 100 us RθJA = 125 oC/W

100
TA = 25 oC
1 ms
1 10 ms
THIS AREA IS
LIMITED BY rDS(on) 100 ms 10
SINGLE PULSE
0.1 1s
TJ = MAX RATED
10 s
RθJA = 125 oC/W
o DC 1
TC = 25 C
0.01 0.5
0.01 0.1 1 10 100 10
-4
10
-3
10
-2
10
-1
1 10 100 1000
VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

©2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDMC8884 Rev.E2
 FDMC8884 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted

2
1 DUTY CYCLE-DESCENDING ORDER

D = 0.5
NORMALIZED THERMAL

0.2
0.1
IMPEDANCE, ZθJA

0.1 0.05
0.02 PDM
0.01

t1
0.01 t2
NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
o PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 125 C/W
0.001
-4 -3 -2 -1
10 10 10 10 1 10 100 1000
t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Transient Thermal Response Curve

©2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDMC8884 Rev.E2
 FDMC8884 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout

©2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDMC8884 Rev.E2
 FDMC8884 N-Channel Power Trench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™ F-PFS™ Power-SPM™ ®*
Auto-SPM™ FRFET® PowerTrench®
Build it Now™ Global Power ResourceSM PowerXS™ The Power Franchise®
CorePLUS™ Green FPS™ Programmable Active Droop™ ®

CorePOWER™ Green FPS™ e-Series™ QFET®

CROSSVOLT™ Gmax™ QS™ tm

TinyBoost™
CTL™ GTO™ Quiet Series™
TinyBuck™
Current Transfer Logic™ IntelliMAX™ RapidConfigure™
TinyCalc™
DEUXPEED® ISOPLANAR™ ™
TinyLogic®
Dual Cool™ MegaBuck™
TINYOPTO™
EcoSPARK® MICROCOUPLER™ Saving our world, 1mW/W/kW at a time™
TinyPower™
EfficentMax™ MicroFET™ SignalWise™
TinyPWM™
ESBC™ MicroPak™ SmartMax™
TinyWire™
® MicroPak2™ SMART START™
TriFault Detect™
MillerDrive™ SPM®
TRUECURRENT™*
tm

® MotionMax™ STEALTH™
Fairchild μSerDes™
Fairchild Semiconductor ® Motion-SPM™ SuperFET™
FACT Quiet Series™ OptiHiT™ SuperSOT™-3
FACT® OPTOLOGIC® SuperSOT™-6
OPTOPLANAR® SuperSOT™-8 UHC®
FAST®
® SupreMOS™ Ultra FRFET™
FastvCore™
SyncFET™ UniFET™
FETBench™ tm

Sync-Lock™ VCX™
FlashWriter® * PDP SPM™ VisualMax™
FPS™
XS™
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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

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Obsolete Not In Production
Semiconductor. The datasheet is for reference information only.
Rev. I48
©2010 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
FDMC8884 Rev.E2