a22t_1%Ga_vacuum_420oC a37t2%Ga_vacuum420oC

a19t _ZnO_3%Ga_vacuum_420oC a20t _ZnO_5%Ga_ vacuum_420oC

As-deposited vacuum_420oC

Figure 1 SEM images of as-deposited and Ga-doped ZnO thin films annealed in vacuum at
the 420oC temperature, synthetized in Ar atmosphere.
 a27t_ZnO:Ga_5%_O2_vacuum_anneal
a26t_ZnO:Ga_3%_O2_vacuum_anneal
a25t_ZnO:Ga_2%_O2_vacuum_annea
a24t_ZnO:Ga_1%_O2_vacuum_anneal
a32t_ZnO_O2_vacuum_anneal
Intensity

30 40 50 60 70
2, degree

Figure 2 XRD of Ga-doped ZnO thin films annealed in vacuum at the 420oC temperature,
synthetized in O2 atmosphere.
 a20t_ZnO:Ga_5%_Ar_vacuum_anneal

[002]
a19t_ZnO:Ga_3%_Ar_vacuum_anneal
a18t_ZnO:Ga_2%_Ar_vacuum_anneal
a22t_ZnO:Ga_1%_Ar_vacuum_anneal
a21t_ZnO_Ar_vacuum_anneal

[100]

[101]

[102]

[110]

[100]
[100]
[002]

[101]
Intensity

[102]

[110]

[100]
[100]
[002]

[101]

[100]
[102]

[110]
[100]

[002]

[101]

[110]
[102]

[100]
[100]

[002]

[101]

[102]

[110]

[100]
30 40 50 60 70
2, degree

Figure 3 XRD of Ga-doped ZnO thin films annealed in vacuum at the 420oC temperature,
synthetized in Ar atmosphere.

ZnO:Ga in O2
ZnO:Ga in Ar
3
1,0x10

2
8,0x10
Intensity, arb un.

2
6,0x10

2
4,0x10

2
2,0x10

28 30 32 34 36 38 40
2, degree

Figure 4 XRD of 5% Ga-doped ZnO thin films annealed in vacuum at the

same temperature, but synthetized in different atmospheres
 a19t_3UNTITLEDa_ZnO
a20t_5UNTITLEDa_ZnO
2
8,0x10 a22t_1UNTITLEDa_ZnO
a37t_2UNTITLEDa_ZnO
a23t_as deposited_ZnO

Intensity, arb.un
7,5x10

2
7,0x10

2
6,5x10

2
6,0x10
500 1000 1500 2000
Raman shift, cm-1

Figure 5 Raman analysis of Ga-doped ZnO thin films annealed in vacuum at the 420oC
temperature, synthetized in Ar atmosphere.

a23t_as deposited ZnO

2 a24t_1UNTITLEDa_ZnO
9,0x10 a25t_2UNTITLEDa_ZnO
a27t_5UNTITLEDa_ZnO
2
8,5x10
Intensity, arb.un

2
8,0x10

2
7,5x10

2
7,0x10

2
6,5x10

2
6,0x10
250 500 750 1000 1250 1500 1750 2000
Raman shift, cm-1

Figure 6 Raman analysis of Ga-doped ZnO thin films annealed in vacuum at the 420oC
temperature, synthetized in O2 atmosphere.
 a
100 100 a21t_ZnO_Ar_vacuum_anneal b
11 a22t_ZnO:Ga_1%_Ar_vacuum_anneal
3,0x10
a18t_ZnO:Ga_2%_Ar_vacuum_anneal
a19t_ZnO:Ga_3%_Ar_vacuum_anneal
80 80 2,5x10
11
a20t_ZnO:Ga_5%_Ar_vacuum_anneal

2
(h) (cm eV)
11
2,0x10

-1
60 60
T, %

T_a21t_ZnO_Ar_vacuum_anneal

R, %
11
T_a22t_ZnO:Ga_1%_Ar_vacuum_anneal 1,5x10
T_a18t_ZnO:Ga_2%_Ar_vacuum_anneal
40 40

2
T_a19t_ZnO:Ga_3%_Ar_vacuum_anneal
11
T_a20t_ZnO:Ga_5%_Ar_vacuum_anneal 1,0x10
R_a21t_ZnO_Ar_vacuum_anneal
R_a22t_ZnO:Ga_1%_Ar_vacuum_anneal
20 R_a18t_ZnO:Ga_2%_Ar_vacuum_anneal 20 5,0x10
10

R_a19t_ZnO:Ga_3%_Ar_vacuum_anneal
R_a20t_ZnO:Ga_5%_Ar_vacuum_anneal
0,0
0 0 3,15 3,20 3,25 3,30 3,35 3,40
300 400 500 600 700 800
h (eV)
, nm

Figure 6 Transmittance, reflectance (a) and dependencies (𝛼ℎ𝜈)2 = f(ℎ𝜈) (b) of vavuum annealed
undoped and Ga-doped ZnO synthetized in Ar atmosphere.

Table Eg value of undoped and Ga-doped ZnO thin films obtained in Ar atmosphere.

Samples undoped 1% Ga 2%Ga 3% Ga 5%Ga

Eg 3.28 3.29 3.29 3.3 3.29

a32t_ZnO_O2_vacuum_anneal
a24t_ZnO:Ga_1%_O2_vacuum_anneal
100 a 100
3,5x10
11 a25t_ZnO:Ga_2%_O2_vacuum_anneal b
a26t_ZnO:Ga_3%_O2_vacuum_anneal
11
80 80 3,0x10 a27t_ZnO:Ga_5%_O2_vacuum_anneal
2
(h) (cm eV)

11
T_a32t_ZnO_O2_vacuum_anneal 2,5x10
-1

60 T_a24t_ZnO:Ga_1%_O2_vacuum_anneal 60 11
T_a25t_ZnO:Ga_2%_O2_vacuum_anneal 2,0x10
T, %

R, %

T_a26t_ZnO:Ga_3%_O2_vacuum_anneal
T_a27t_ZnO:Ga_5%_O2_vacuum_anneal 11
40 40 1,5x10
2

T_a38th_ZnO:Ga_2%_O2_treated_H2
R_a32t_ZnO_O2_vacuum_anneal 11
R_a24t_ZnO:Ga_1%_O2_vacuum_anneal 1,0x10
20 R_a25t_ZnO:Ga_2%_O2_vacuum_anneal 20
10
R_a26t_ZnO:Ga_3%_O2_vacuum_anneal 5,0x10
R_a27t_ZnO:Ga_5%_O2_vacuum_anneal
R_a38th_ZnO:Ga_2%_O2_treated_H2 0,0
0 0
300 400 500 600 700 800 3,2 3,3 3,4
, nm
h (eV)

Figure 7 Transmittance, reflectance (a) and dependencies (𝛼ℎ𝜈)2 = f(ℎ𝜈) (b) of vavuum annealed
undoped and Ga-doped ZnO synthetized in O2 atmosphere.
 a19t3%_ZnO
1,6 Ar atmosphere
a20t5%_ZnO
a22t_1%_ZnO
Fluorescence Intensity,

a37t_2%_ZnO
normalized, arb. un

Ex, 350 nm
1,2

0,8

0,4

0,0
320 330 340 350 360 370 380

nm

Fluorescence of Ga-doped ZnO thin films annealed in vacuum at the 420oC temperature,
synthetized in Ar atmosphere