7 SGS-THOMSON IRF640 SIF iicrozecrromics IRF640FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss_| Rosion | lo TRF640 ov |<0182) 18A IRF640F! zoov | Injen * Rostonirax Vas 1 R DYNAMIC ‘Symbol Parameter Test Conditions min. | Typ. | Max. | Unit a (+) [Forward Vos lojonx Rosionynas =A | 65 | 19 $ ‘Transconductance Cis Input Capacitance _\Vos=28V {=1MHz Vos=0 600 | 2100 | pF Coes Output Capacitance 270 | 350 pF Crs (Reverse Transfer so. | 70 pF Capacitance 29 hhh Se crtrttIRF640/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD ‘Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Tura-on Time Voo=100V p= 18A 20 | 90 | ns Rise Time Fg =919 Vas» 10V 75 | 105 | ns Turn-off Delay Time (see test circuit) 60 | 85 ns Fall Time 50 | 70 ns Total Gate Charge |In= 18A Vas= 10 V 57 | 80 | no Gate-Source Charge Vp = Max Rating x 0.8 " nc. Gate-Drain Charge _|(see test circuit) 26 nc. SOURCE DRAIN DIODE ‘Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Ts |Souree-drain Current eA Isow(*) | Source-drain Current 72 A (pulsed) Vso (+) [Forward On Voltage 1s | Vv ty [Reverse Recovery 100 Alnus 300 ns Time 160 °C Q, Reverse Recovery a9 uc. Charge (@) Pulsed Pulse duraton= 300m, day ayce 15% {2} Puse with ited by safe operating ares Sate Operating Area for TO-220 Sate Operating Area for ISOWATT220 14) ola) 6, oPeRATON 39IRF640/FI Thermal Impedance for TO-220 7 eexsia 10"To.0g 0.01 fsiNous Puts 107 1 108 10 10 10 HA) Derating Curve for TO-220 Pra) a7 120] 80| 40] ° 30 100 ane (0) Output Characteristics 4) a] 30 “0 so 2 10 08 10 18 20.25 Vosl¥) 49 Thermal Impedance for ISOWATT220 k 10" 0.05, 0.02 so-af | SHGLE PULSE 10 10% 1010 10-7 10% Hy (s) Derating Curve for ISOWATT220 ec im 4 30 20 10] 0 40 80120 raw) Transfer Characteristics tna) Vos =250 40 x» 20 0 0 2 * 6 8 vest) Ayr SeninIRF640/FI Transconductance costs so csiv0 9u(5)[—] vygatov i. 25°C “40°C 12] 0.14] —t 125°C | 0.10 4 ° 4 8 12 16 IpfA) s 10 15 |p(A) Maximum Drain Current vs Temperature tolA) 20 16 MS 2 0 2 50 75 100 ett) Capacitance Variations Gate Charge vs Gate-source Voltage Ves(¥) 2 19 0 10 2 30 40 30 O4(ne) Normalized Breakdown Voltage vs Temperature lpr) 090 2500 2000 1500) 000) 500] 0 10 20 30 40 50 Vos(v) 5 Yours set Vex=0 7 Ib=250 ua] rr) oa] 1 os o 390 100 ~~T,(t) 59IRF640/FI Normalized On Resistance vs Temperature Roxen, i (norm) 209] 1a 1.09) Ves=10¥ Ip=8A o.5| a a TO) Unclamped Inductive Load Test Circuit ‘Source-drain Diode Forward Characteristics Veo) 10) os} ost o7| ol asl 05 10 15 20 25 Isn(a) Unclamped Inductive Waveforms 2200 “ ‘ our. Yenoss ‘Switching Time Test Circuit Gate Charge Test Circuit 69IRF640/FI TO-220 MECHANICAL DATA ran mom neh MIN. TP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 oat c 1.23 132 0.088) 0.051 D 2.40 272 (0.094 0.107 D1 127, 0.050 E 0.49) 0.70 0.019 0.027 F ot 0.88) 028 0.094 FA 1.14) 1.70 04a 0.087 F2 1.14 1.70 0.048 0.087 6 495 5.15 0.194 0.203 ei 24 27, 0.094 0.106 He 100 10.40 0.393 0.409 2 164 0.645 La 730) 140 ost 0561 ey 2.65) 2.95) 0.104 0.116 Ls 15.25 15.75 0.600 0.620 7 62 66 0244 0.260 Lg 35 393) 0.197 0.154 DIA 375 3.85 0.147 0.181 B & g an wh | 2 —— Lat Ls ee w Ls ua Po1c SF crit 79IRF640/FI ISOWATT220 MECHANICAL DATA om. mm inch MIN TYP. MAX. MIN. TWP. MAX. A 44 45 0.173 0.181 8 25 27 0.098 0.108 D 25 276 0.098 0.408 E oa 07 0.015 0027 F 075 1 0.030 0.039 Ft 138 7 0.046 0.067 Fa 115 47 0.045; 0.067 a 495 52 0.195; 0204 i 24 27 0.098 0.108 H 10 104 0.395) 0.409 16 0.630 ls 286 306 1.126 1.204 la 98 106 0.385 oat7 Us 158 164 0.626 0.686 7 8 93 0.368 0.366 3 32 0.8 0.126 < ° 12 us PONG 39 eo7y