AUTOMOTIVE GRADE PD - 96380

AUIRF2903ZS
AUIRF2903ZL
HEXFET® Power MOSFET
Features D V(BR)DSS 30V
l Advanced Process Technology RDS(on) typ. 1.9mΩ
l Low On-Resistance
l 175°C Operating Temperature max. 2.4mΩ
G
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 235A k
S
l Lead-Free, RoHS Compliant
ID (Package Limited) 160A
l Automotive Qualified *

Description D
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon S
S
D
area. Additional features of this design are a 175°C junction D G
G
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make D2Pak TO-262
AUIRF2903ZS AUIRF2903ZL
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
G D S
Gate Drain Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 235 k
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 166 k A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 160 k
IDM Pulsed Drain Current c 1020
PD @TC = 25°C Power Dissipation 231 W
Linear Derating Factor 1.54 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally limited) d 231 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value h 820
IAR Avalanche Current c See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy g mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case j ––– 0.65
RθJA Junction-to-Ambient ––– 62 °C/W
RθJA Junction-to-Ambient (PCB Mount, steady state) i ––– 40

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

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Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 1.9 2.4 mΩ VGS = 10V, ID = 75A **e
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 150μA
gfs Forward Transconductance 120 ––– ––– S VDS = 10V, ID = 75A**
IDSS Drain-to-Source Leakage Current ––– ––– 20 VDS = 30V, VGS = 0V
μA
––– ––– 250 VDS = 30V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
nA
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Qg Total Gate Charge ––– 160 240 ID = 75A**
Qgs Gate-to-Source Charge ––– 51 ––– nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– 58 ––– VGS = 10V e
td(on) Turn-On Delay Time ––– 24 ––– VDD = 15V
tr Rise Time ––– 100 ––– ID = 75A**
ns
td(off) Turn-Off Delay Time ––– 48 ––– RG = 3.2 Ω
tf Fall Time ––– 37 ––– VGS = 10V e
LD Internal Drain Inductance Between lead, D
––– 4.5 –––
6mm (0.25in.)
nH G
LS Internal Source Inductance from package
––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 6320 ––– VGS = 0V

Coss Output Capacitance ––– 1980 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 1100 ––– ƒ = 1.0MHz
pF
Coss Output Capacitance ––– 5930 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 2010 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 3050 ––– VGS = 0V, VDS = 0V to 24V f
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current
(Body Diode)
––– ––– 160 k A
MOSFET symbol
showing the
D

ISM Pulsed Source Current integral reverse G

(Body Diode) c ––– ––– 1020

p-n junction diode.
e
S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 75A**, VGS = 0V
trr Reverse Recovery Time ––– 34 51 ns TJ = 25°C, IF = 75A**, VDD = 15V
Qrr Reverse Recovery Charge ––– 29 44 nC di/dt = 100A/μs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.10mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
† This value determined from sample failure population. 100%
tested to this value in production.
‡ This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C
‰ Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 160A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
** All AC and DC test condition based on former Package limited
current of 75A.

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Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level Comments: This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.

3L-D2 PAK MSL1

Moisture Sensitivity Level
3L-TO-262 N/A
†††
Class M4(+/- 800V )
Machine Model
(per AEC-Q101-002)
†††
Class H2(+/- 4000V )
ESD Human Body Model
(per AEC-Q101-001)
†††
Class C5(+/- 2000V )
Charged Device Model
(per AEC-Q101-005)
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage

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1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

100

10
4.5V
4.5V
≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH
Tj = 25°C Tj = 175°C
1 10
0.1 1 10 100 1000 0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.0 240
TJ = 25°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current(Α)

200
100.0 TJ = 175°C

160 TJ = 175°C

10.0
120

TJ = 25°C 80
1.0

VDS = 25V
40 VDS = 10V
≤ 60μs PULSE WIDTH
0.1 380μs PULSE WIDTH
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0
VGS, Gate-to-Source Voltage (V) 0 20 40 60 80 100 120 140 160 180
ID, Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current

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12000 20
VGS = 0V, f = 1 MHZ
ID= 75A VDS = 24V
Ciss = Cgs + Cgd, Cds SHORTED

VGS, Gate-to-Source Voltage (V)

10000 Crss = Cgd VDS= 15V
16
Coss = Cds + Cgd
C, Capacitance (pF)

8000
12
Ciss
6000
8
4000
Coss
4
2000 Crss

0
0
0 40 80 120 160 200 240
1 10 100
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.0 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)

TJ = 175°C
ID, Drain-to-Source Current (A)

1000
100.0

1msec
100μsec
100
10.0
10msec
10 LIMITED BY PACKAGE
TJ = 25°C

1.0
1 Tc = 25°C DC
Tj = 175°C
VGS = 0V
Single Pulse
0.1 0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 0.1 1 10 100
VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage Fig 8. Maximum Safe Operating Area

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240 2.0
ID = 75A

RDS(on) , Drain-to-Source On Resistance

Limited By Package VGS = 10V
200
ID, Drain Current (A)

160 1.5

(Normalized)
120

80 1.0

40

0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
25 50 75 100 125 150 175
T C , Case Temperature (°C) TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current Vs. Fig 10. Normalized On-Resistance

Case Temperature Vs. Temperature

D = 0.50
Thermal Response ( Z thJC )

0.20
0.1
0.10
0.05

0.02
0.01
0.01

SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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600

EAS, Single Pulse Avalanche Energy (mJ)

15V ID
500 TOP 26A
42A
BOTTOM 75A
L DRIVER
VDS
400

RG D.U.T +
V 300
- DD
IAS A
VGS
20V
tp 0.01Ω
200

100

Fig 12a. Unclamped Inductive Test Circuit

0
25 50 75 100 125 150 175
V(BR)DSS
Starting T J, Junction Temperature (°C)
tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
I AS

Fig 12b. Unclamped Inductive Waveforms

10 V
QG
4.5
ID = 1.0A
QGS QGD ID = 1.0mA
VGS(th) Gate threshold Voltage (V)

4.0
ID = 250μA
ID = 150μA
3.5
VG
3.0

Charge 2.5

Fig 13a. Basic Gate Charge Waveform 2.0

Current Regulator 1.5

Same Type as D.U.T.

1.0
50KΩ
-75 -50 -25 0 25 50 75 100 125 150 175
12V .2μF
.3μF
TJ , Temperature ( °C )
+
V
D.U.T. - DS

VGS Fig 14. Threshold Voltage Vs. Temperature

3mA

IG ID
Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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AUIRF2903ZS/ZL

1000
Duty Cycle = Single Pulse

Allowed avalanche Current vs

Avalanche Current (A)

100 0.01 avalanche pulsewidth, tav

assuming Δ Tj = 25°C due to
avalanche losses. Note: In no
0.05 case should Tj be allowed to
0.10 exceed Tjmax

10

1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

160
TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 15, 16:
BOTTOM 1% Duty Cycle (For further info, see AN-1005 at www.irf.com)
ID = 75A 1. Avalanche failures assumption:
EAR , Avalanche Energy (mJ)

120 Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
80
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
40 5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
0 Tjmax (assumed as 25°C in Figure 15, 16).
25 50 75 100 125 150 175 tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Starting T J , Junction Temperature (°C)
ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
Vs. Temperature EAS (AR) = PD (ave)·tav

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Driver Gate Drive

D.U.T P.W.
Period D=
+ P.W. Period

VGS=10V*
ƒ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
Current Transformer D.U.T. ISD Waveform
+
Reverse
‚ Recovery Body Diode Forward
„ Current Current
- +
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG V DD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test - Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET®
Power MOSFETs

RD
V DS

VGS
D.U.T.
RG
+
- V DD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

VDS
90%

10%
VGS
td(on) tr t d(off) tf

Fig 18b. Switching Time Waveforms

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D2Pak Package Outline (Dimensions are shown in millimeters (inches))

D2Pak Part Marking Information

Part Number AUF2903ZS

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, Lead Free

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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 AUIRF2903ZS/ZL

TO-262 Package Outline ( Dimensions are shown in millimeters (inches))

TO-262 Part Marking Information

Part Number AUF2903ZL

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, Lead Free

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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D2Pak Tape & Reel Infomation

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

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Ordering Information
Base part Package Type Standard Pack Complete Part Number
Form Quantity
AUIRF2903ZL TO-262 Tube 50 AUIRF2903ZL
AUIRF2903ZS D2Pak Tube 50 AUIRF2903ZS
Tape and Reel Left 800 AUIRF2903ZSTRL
Tape and Reel Right 800 AUIRF2903ZSTRR

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AUIRF2903ZS/ZL
IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
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requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105

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