ECE-305: Spring 2016

Minority Carrier
Diffusion Equation (MCDE)
Professor Mark Lundstrom
Electrical and Computer Engineering
Purdue University, West Lafayette, IN USA
lundstro@purdue.edu
Pierret, Semiconductor Device Fundamentals (SDF)
pp. 122-132

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2/9/16
 Announcements

Exam 2 will be on Monday, Feb 15, 8-9 PM in PHYS

112. Covers Weeks 3, 4, and 5 (HW 3, 4, and 5).
See class home page for more information.

Class on Thursday, Feb. 11 will be an optional class

period for review, catch up, and getting ready for
Exam 2.

Lundstrom ECE 305 S16

 outline

Analyzing semiconductor problems often comes

down to solving the minority carrier diffusion equation
(MCDE).

In this lecture, I will discuss HW5, which gives us

practice solving the MCDE for several common
situations.

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 “the semiconductor equations”
!
∂p ⎛ Jp ⎞
= −∇i ⎜ ⎟ + G p − Rp Three equations in three
∂t ⎝ q⎠
unknowns:
!
∂n ⎛J ⎞
= −∇i ⎜ n ⎟ + Gn − Rn ! ! !
∂t ⎝ −q ⎠ p (r ), n(r ), V (r )

!
( )
0 = −∇i ε E + ρ

! ! ! !
(
J p = pqµ pE − qD p∇p = pµ p∇ Fp q ) (
ρ = q p − n + N D+ − N A− )
! ! ! ! ! !
J n = nqµnE + qDn∇n = nµn∇ ( Fn q ) !
E ( r ) = ∇V ( r )
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 minority carrier diffusion equation

n = n0 = N D (N-type semiconductor in
! low level injection)
∂p ⎛ Jp ⎞
= −∇i ⎜ ⎟ + G p − Rp (hole continuity equation)
∂t ⎝ q⎠

∂p d ⎛ J px ⎞
=− ⎜ ⎟ + GL − Rp (1D, generation by light)
∂t dx ⎝ q ⎠

∂ Δp d ⎛ −qD p dΔp dx ⎞ Δp
=− ⎜ ⎟⎠ + G − (low-level injection, no
∂t dx ⎝ q
L
τp
electric field)

∂ Δp d 2 Δp Δp
= Dp − + GL (Dp spatially uniform)
∂t dx 2
τp
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 minority carrier diffusion equation

∂ Δp ( x,t ) d 2 Δp ( x,t ) Δp ( x,t )

= Dp − + GL
∂t dx 2 τp

To use the MCDE to solve a problem, first check to be

sure that the simplifying assumptions needed to derive
the MCDE from the continuity equation apply.

Then further simplify the MCDE (if possible), specify the

initial condition (if necessary) and the two boundary
conditions (if necessary).
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 low level injection

N-type semiconductor:

n ( x,t ) = n0 = N D ∂ Δp ( x,t ) d 2 Δp ( x,t ) Δp ( x,t )

= Dp − + GL
∂t dx 2
τp
p ( x,t ) ≈ Δp ( x,t ) >> p0 = ni2 n0

P-type semiconductor:
∂ Δn ( x,t ) d 2 Δn ( x,t ) Δn ( x,t )
p ( x,t ) = p0 = N A = Dn − + GL
∂t dx 2
τn

n ( x,t ) ≈ Δn ( x,t ) >> n0 = ni2 p0

 HW 5

P-type Si at T = 300 K

N A = 1017 cm −3 = p0
MCDE for electrons
µn = 300 cm 2 /V-s
∂ Δn ( x,t ) d 2 Δn ( x,t ) Δn ( x,t )
= Dn − + GL
⎛k T⎞ ∂t dx 2
τn
Dn = ⎜ B ⎟ µn = 7.8 cm 2 /s
⎝ q ⎠

τ n = 10 −6 s

Ln = Dnτ n = 27.9 µm “diffusion length”

HW5 #1: P-type sample in LL injection

Steady-state, uniform generation (no spatial variation)

Solve for Δn and for the QFL’s.

1)  Simplify the MCDE ∂ Δn d 2 Δn Δn

= Dn − + GL
2)  Solve the MCDE ∂t dx 2
τn
3)  Deduce Fn from Δn
Δn
0 = 0− + GL
τn

Δn = GL τ n

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 HW5 #1: solution
Δn ( x )

Δn ( x ) = GLτ n

Δn = GLτ n = 10 20 × 10 −6 = 1014

x
x=0

Steady-state, uniform generation, no spatial variation

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 HW5 #1: solution

P-type / equilibrium

ni2 p0 = ni e( Ei −EF ) kBT

n0 = = 10 3 cm -3
p0
EC 1017 = 1010 e( Ei −EF ) kBT

Ei
EF EF = Ei − 0.41 eV
EV
p0 = 1017 cm -3

Steady-state, uniform generation, no spatial variation

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 HW5 #1: solution

P-type / out of equilibrium Fp = Ei − 0.41 eV

n ≈ Δn = ni e( Fn −Ei ) kBT
Δn = 1014
cm >> n0
-3

EC 1014 = 1010 e( Fn −Ei ) kBT

Fn
Ei
Fn = Ei + 0.24 eV
Fp
EV
p0 = 1017 cm -3

Steady-state, uniform generation, no spatial variation

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 HW5 #2

Now turn off the light.

Transient, no generation, no spatial variation
Solve for Δn and for the QFL’s.
∂ Δn ( x,t ) d 2 Δn ( x,t ) Δn ( x,t )
= Dn − + GL
∂t dx 2
τn
1)  Simplify the MCDE
2)  Solve the MCDE ∂ Δn Δn
= 0− +0
3)  Deduce Fn from Δn ∂t τn

∂ Δn Δn
=−
∂t τp

Δn ( t ) = Δn ( 0 ) e−t /τ n = 1014 e−t /τ n

 HW5 #2: Solution

Δn ( 0 ) = 1014

Δn ( t )

Δn ( x ) = Δn ( 0 ) e−t /τ n

Δn = ( t → ∞ ) = 0
t
t=0

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 HW5 #2: solution

Δn ( t = 0 ) = GLτ n

Δn ( x )

How do the QFL’s

vary with time?

Δn ( t ) = Δn ( t = 0 ) e−t /τ n

x
x=0

transient, no generation, no spatial variation

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 HW5 #2: solution

Fp = Ei − 0.41 eV

n ( t ) ≈ Δn ( t ) = ni e(
Fn ( t )−Ei ) kBT EC
Fn
Ei
1014 e−t /τ n = 1010 e(
Fn ( t )−Ei ) kBT
Fp
EV

Fn ( t ) = Ei + kBT ln (10 ) − kBT

t
4

τn

transient, no generation, no spatial variation

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 HW5 #4

Steady-state, sample long compared to the diffusion length.

No generation.
∂ Δn d 2 Δn Δn
Δn ( x = 0 ) = 10 cm
12 -3
fixed = Dp − + GL
∂t dx 2 τ n

1)  Simplify the MCDE d 2 Δn Δn

2)  Solve the MCDE 0 = Dp − +0
dx 2
τn
3)  Deduce Fn from Δn
d 2 Δn Δn
− =0
dx 2
D pτ n

d 2 Δn Δn
2
− 2 =0 Ln ≡ Dnτ n
dx Ln
 HW5 #4: solution

Steady-state, sample long compared to the diffusion length.

No generation.
d 2 Δn ( x ) Δn ( x )
− =0 Ln ≡ Dnτ n
Δn ( x = 0 ) = 1012 cm -3 fixed dx 2 L2n

1)  Simplify the MCDE Δn ( x ) = Ae− x/Ln + Be+ x/Ln

2)  Solve the MCDE
3)  Deduce Fn from Δn Δn ( x ) = Ae− x/Ln

Δn ( x ) = Δn ( 0 ) e− x/Ln = 1012 e− x/Ln

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 HW5 #4: solution

Δn ( 0 ) Ln = Dnτ n << L

Δn ( x )

Δn ( x ) = Δn ( 0 ) e− x/Ln

Δn ( x → ∞ ) = 0
x
x=0 x = L = 200 µm

Steady-state, sample long compared to the diffusion length.

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 HW5 #4

Draw the energy band diagram with the QFL’s. Is

there an electron current?

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 HW5 #5

Steady-state, sample is 5 micrometers long. No generation.

∂ Δn d 2 Δn Δn
Δn ( x = 0 ) = 10 cm
12 -3
fixed = Dp − + GL
∂t dx 2 τ n

Δn ( x = 5 µm ) = 0
d 2 Δn Δn
0 = Dp − +0
dx 2
τn

d 2 Δn Δn
1)  Simplify the MCDE − 2 =0 Ln ≡ Dnτ n
dx 2 Ln
2)  Solve the MCDE
3)  Deduce Fn from Δn
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 HW5 #5: solution

Steady-state, sample is 5 micrometers long. No generation.

Δn ( x = 0 ) = 1012 cm -3 fixed d 2 Δn ( x ) Δn ( x )
− =0 Ln ≡ Dnτ n
dx 2 L2n

Δn ( x = 5 µm ) = 0
d 2 Δn ( x )
=0
dx 2

1)  Simplify the MCDE Δn ( x ) = Ax + B

2)  Solve the MCDE
⎛ x⎞
3)  Deduce Fn from Δn Δn ( x ) = Δn ( 0 ) ⎜ 1− ⎟
⎝ L⎠

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 HW5 #5: solution

Δn ( 0 ) L p = D pτ p = 28 µm >> L = 5 µm

Δn ( x )

⎛ x⎞
Δn ( x ) = Δn ( 0 ) ⎜ 1− ⎟ Δn ( x = L ) = 0
⎝ L⎠

x
x=0 x=L

Steady-state, sample short compared to the diffusion length.

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 HW5 #6

Steady-state, sample is 30 micrometers long. No generation.

∂ Δn d 2 Δn Δn
Δn ( x = 0 ) = 10 cm
12 -3
fixed = Dp − + GL
∂t dx 2 τ n

Δn ( x = 30 µm ) = 0
d 2 Δn Δn
0 = Dp − +0
dx 2
τn

d 2 Δn Δn
1)  Simplify the MCDE − 2 =0 Ln ≡ Dnτ n
dx 2 Ln
2)  Solve the MCDE
3)  Deduce Fn from Δn
Ln = 28 µm L = 30 µm
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 HW5 #6: solution

Steady-state, sample is 30 micrometers long. No generation.

Δn ( x = 0 ) = 1012 cm -3 fixed d 2 Δn Δn
− 2 =0
dx 2 Ln
Δn ( x = 30 µm ) = 0
Δn ( x ) = Ae− x/Ln + Be+ x/Ln

Δn ( 0 ) = A + B = 1012
1)  Simplify the MCDE
2)  Solve the MCDE Δn ( L ) = Ae− L/Ln + Be+ L/Ln = 0
3)  Deduce Fn from Δn
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 HW5 #6

Ln = Dnτ n ≈ L
Δn ( 0 )

sinh ⎡⎣( L − x ) / Ln ⎤⎦
Δn ( x ) Δn ( x ) = Δn ( 0 )
sinh ( L / Ln )

Δn ( x = L ) = 0

x
x=0 x=L

Steady-state, sample neither long nor short compared to the

diffusion length.
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 ~HW5 #3

An infinitely long sample is uniformly illuminated with light for a

long time. The optical generation rate GL = 1 x 1020 cm-3 sec-1.
The minority carrier lifetime is 1 microsecond. The surface at
x = 0 is highly defective, with a high density of R-G centers, so
that Δn(0) = 0.

Find the s.s. excess minority carrier concentration vs. position.

d 2 Δp Δp
Dn − + GL = 0 Can we guess the solution?
dx 2 τ n

(This is like HW5 #3, but a little simpler.)

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 ~ HW5 #3

Δn ( x )
Δn ( x → ∞ ) = GLτ p
(
GLτ n 1− e
−x L p
)
d 2 Δp Δp
Dn − + GL = 0
dx 2
τn

Δn ( 0 ) = 0
x
x=0

What does the energy band diagram look like?

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 corresponding energy band diagram

E EC

Fn ( x )
Ei

Fp ( x )

EV
x
x=0

What does a gradient in the QFL mean?

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 summary

Long region: decaying exponential solutions.

Short region: linear

Neither long nor short: hyperbolic functions

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