Fall Semester of 2021

4 4、In the plasma chamber, which particle has the highest velocity? B
一、 选择题：[20 pts]
a. ions
1、Which process is not necessary in order to remove organics on top of sample b. electrons
surface? D c. Both of ions and electrons have the same velocity
a. Oxygen plasma etching 氧等离⼦体蚀刻（灰烬） d. No any rule for the velocity
b. UV/ozone (紫外臭氧清洗,基材和薄膜蒸镀需要很好的粘接时，紫外清洗非 5、If a CVD process is transport limited growth, what method can be used to
常理想。) increase the growth rate?如果 CVD 过程是运输限制的生长，可以用什么方
c. Piranha cleaning(浓硫酸和双氧水的混合液) 法来提高生长速率？ D
d. HF:HCl(1.2:200) for 5 min a. Increase the temperature
e. H2O2 and H2O at boiling temperature H2O2 和 H2O，特别是在沸腾温度下 b. Change the pre-reaction materials
2、Which technology is an In-situ method with feed back to measure the thickness o c. Clean the surface of substrate
deposited film 哪种技术是一种测量沉积膜厚度的原位方法？D d. Increase the surface in contact
a. Surface profilometer 表面轮廓仪 6、Which one is not the advantage for Nanoimprint Lithography? D
b. Optical microscopy with 3D profile 具有三维轮廓的光学显微镜 a. Sub-10 nm resolution
c. Atomic force microscopy 原子力显微镜 b. Capable for fabrication on series of polymer materials.
d. All above c. Large scale fabrication
3、In order to achieve the worst step coverage of metal over non-planar topography, d. 3D fabrication
and achieve structures using lift-off process, which film deposition method should be e. For any periodicity and non-periodicity structures
used. 为了实现金属在非平面形貌上的最差步长覆盖，并采用剥离工艺实现 7、Which issue is not important in etching? D
结构，应采用哪种薄膜沉积方法。B a. Uniformity across wafer
a. Thermal deposition b. The etching rate
b. Electron beam deposition 电子束沉积 c. Selectivity
c. Chemical vapor deposition d. Much be isotropy 应该是各向异性
d. Sputtering e. All of above

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 二、对错题：Circle either (T)rue or (F)alse (2 pts each) [20 pts]
8、Which method can be used to enhance the resolution in optical lithography 提高 i) In sequential rate processes, the fast step dominates the overall process rate 在顺序速
光刻技术分辨率? C 率过程中，快速步长主导了整个过程的速率 T F 应该是慢速步长主导
a. Decrease the process parameters k1 ii) Electron beam lithography is a planar pattern method.电子束光刻是一种平面图案的
b. Decrease the wavelength 方法。T F
c. Increase the numerical aperture 增加数值孔径 iii) Orientation dependent wet etching in Si can be used to realize anisotropic etching. 硅
d. Decease the scattering in photoresist 中取向相关的湿蚀刻可以实现各向异性蚀刻。T F
9、Which method can fabricate 制备 3D micro-nano structure? C iV) In plasma, ions has the highest conductivity.在等离子体中，离子的电导率最高
a. Optical lithography T F 错，是电子
b. Electron beam lithography
V) The only role of photoresist is pattering.
c. Direct laser writing 激光直写
T F
d. Nano imprinting
vi) Wet etching has higher selectivity than dry etching.湿式蚀刻比干法蚀刻具有更高的
10 、 In electron beam lithography, which effect can benefit the sub-100 nm
选择性 T F
structure? A
vii) Proximity lithography can achieve reduced patterns compared to the mask.
a. Decreasing the forward scatteringa. 减少前向散射
T F
b. Decreasing the back scattering
c. Using thick photoresist viii) Ion beam can be used for etching, adding material and patterning.
d. Increasing the inter-proximity T F
NAME

ix) Thermal nanoimprinting can do alignment for multi-layer structures. 热纳米压印技术

可以对多层结构进行排列。 T F 必须使用 SFIL
x) FIB has higher resolution compared to electron beam lithography due to the shorter
wavelength of ions.由于离子波长较短，FIB 比电子束光刻具有更高的分辨率。
T F
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