P0603BK

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

30V 6mΩ @VGS = 10V 30A

PDFN 5*6P

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
TC = 25 °C(Package Limited) 30
2 ID
Continuous Drain Current TC = 25 °C(Silicon Limited) 80
TC = 100 °C 50
1 IDM
Pulsed Drain Current 150 A
TA = 25 °C 16
Continuous Drain Current2 ID
TA = 70 °C 13
Avalanche Current IAS 47
Avalanche Energy L = 0.1mH EAS 112 mJ
TC = 25 °C 62.5
Power Dissipation PD
TC = 100 °C 25
W
TA = 25 °C 2.5
Power Dissipation PD
TA = 70 °C 1.6
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 2
°C / W
Junction-to-Ambient RqJA 50
1
Pulse width limited by maximum junction temperature.
2
Limited only by maximum temperature allowed

Ver 1.0 1 2012/4/16

P0603BK
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.6 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA
VDS = 24V, VGS = 0V , TJ = 25 °C 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 20V, VGS = 0V , TJ = 55 °C 10
Drain-Source On-State VGS = 4.5V, ID = 15A 5.4 9
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 30A 3.8 6
Forward Transconductance1 gfs VDS = 15V, ID = 17A 50 S
DYNAMIC
Input Capacitance Ciss 2160
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 474 pF
Reverse Transfer Capacitance Crss 309
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω
2 Qg
Total Gate Charge 39
2 Qgs VDD = 15V, ID = 30A, VGS = 10V
Gate-Source Charge 10 nC
2 Qgd
Gate-Drain Charge 6
2 td(on)
Turn-On Delay Time 26
2 tr
Rise Time 18
2
VDD = 15V, ID = 10A, RG= 6Ω nS
Turn-Off Delay Time td(off) 40
Fall Time2 tf 16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 2 A
1 VSD IF =30A, VGS = 0V
Forward Voltage 1.2 V
Reverse Recovery Time trr IF = 10 A, dlF/dt = 100A /μS 35 nS
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

Ver 1.0 2 2012/4/16

P0603BK
N-Channel Enhancement Mode MOSFET

Ver 1.0 3 2012/4/16

P0603BK
N-Channel Enhancement Mode MOSFET

Ver 1.0 4 2012/4/16

P0603BK
N-Channel Enhancement Mode MOSFET

Ver 1.0 5 2012/4/16