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    Zhadnov - EGAS50 Poster Lowering Thermal Noise of Ultrastable Cavities To 1e 17 Level of Fractional Frequency Instability

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    Nikita Zhadnov
    This document discusses techniques for lowering the thermal noise of ultrastable optical cavities to achieve fractional frequency instability at the 10−17 level. It describes how silicon cryogenic cavities can achieve very low thermal noise floors due to silicon's high thermal conductivity, low mechanical losses at cryogenic temperatures, and zero coefficient of thermal expansion point at 124K. Finite element analysis is used to optimize the cavity support structure and minimize vibrational sensitivity. Experimental results show fractional frequency instability of 2.2×10−17 can be achieved using a 77.5mm long monolithic silicon cavity with sapphire mirrors coated with silicon dioxide/tantalum pentoxide dielectric stacks.

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    Zhadnov - EGAS50 Poster Lowering Thermal Noise of Ultrastable Cavities To 1e 17 Level of Fractional Frequency Instability

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    Nikita Zhadnov
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    This document discusses techniques for lowering the thermal noise of ultrastable optical cavities to achieve fractional frequency instability at the 10−17 level. It describes how silicon cryogenic cavities can achieve very low thermal noise floors due to silicon's high thermal conductivity, low mechanical losses at cryogenic temperatures, and zero coefficient of thermal expansion point at 124K. Finite element analysis is used to optimize the cavity support structure and minimize vibrational sensitivity. Experimental results show fractional frequency instability of 2.2×10−17 can be achieved using a 77.5mm long monolithic silicon cavity with sapphire mirrors coated with silicon dioxide/tantalum pentoxide dielectric stacks.

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    Zhadnov - EGAS50 poster Lowering thermal noise of ultrastable cavities to 1e−17 level of fractional frequency instability

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    This document discusses techniques for lowering the thermal noise of ultrastable optical cavities to achieve fractional frequency instability at the 10−17 level. It describes how silicon cryogenic cavities can achieve very low thermal noise floors due to silicon's high thermal conductivity, low mechanical losses at cryogenic temperatures, and zero coefficient of thermal expansion point at 124K. Finite element analysis is used to optimize the cavity support structure and minimize vibrational sensitivity. Experimental results show fractional frequency instability of 2.2×10−17 can be achieved using a 77.5mm long monolithic silicon cavity with sapphire mirrors coated with silicon dioxide/tantalum pentoxide dielectric stacks.

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    © All Rights Reserved
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    15 views1 page

    Zhadnov - EGAS50 Poster Lowering Thermal Noise of Ultrastable Cavities To 1e 17 Level of Fractional Frequency Instability

    Uploaded by

    Nikita Zhadnov
    This document discusses techniques for lowering the thermal noise of ultrastable optical cavities to achieve fractional frequency instability at the 10−17 level. It describes how silicon cryogenic cavities can achieve very low thermal noise floors due to silicon's high thermal conductivity, low mechanical losses at cryogenic temperatures, and zero coefficient of thermal expansion point at 124K. Finite element analysis is used to optimize the cavity support structure and minimize vibrational sensitivity. Experimental results show fractional frequency instability of 2.2×10−17 can be achieved using a 77.5mm long monolithic silicon cavity with sapphire mirrors coated with silicon dioxide/tantalum pentoxide dielectric stacks.

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    of 1

    Lowering thermal noise of ultrastable cavities to −17

    10 level
    of fractional frequency instability
    N. Zhadnov a,b, K. Kudeyarov a,b, I. Semerikov a,b, D. Kruchkov a,b, K. Khabarova a,b, N. Kolachevsky a,b
    a P.N. Lebedev Physical Institute, 119991 Moscow, Leninsky prospekt 53, Russia
    b Russian Quantum Center, 143025 ul. Novaya 100, Skolkovo, Moscow region, Russia

    Applications of ultrastable lasers Progress over time PDH locking scheme


    PDH
    error
    signal ∆𝜔(∆𝜔+𝑖𝛿𝜔/2)
    𝑟𝐹𝑃 ∆𝜔 = − 2 2 , Δ𝜔 ≪ ∆𝜔𝐹𝑆𝑅
    (𝛿𝜔/2) +Δ𝜔

    Optical clocks
    ► Probing narrow clock transition ≈ order of magnitude increase in 10 years
    ► Providing stability on times <100 sec
    ► 𝜎𝑦2 𝜏
    1 ∞ 𝑔𝑚 2 𝐿𝐴𝑆𝐸𝑅 𝑚
    = σ𝑚=1 2 𝑆𝑦 ( ) Thermal noise
    𝜏 𝑔0 𝑇𝑐
    σ ∞ 2𝜋𝑖𝑚𝑡/𝑇𝑐
    𝑔 𝑡 = 𝑚=1 𝑔𝑚 ∙ 𝑒
    Silicon cryogenic cavities
    Sources of noise Monocrystalline silicon (for spacer & substrate)
    Thermally induced ► Transparent at λ > 1200 nm
    𝜹𝒇 𝜹𝑳෨ f – optical mode frequency vibrations of the ► High Young’s modulus (3x for Quarts)
    =− ► High thermal conductivity (100x for glass)
    𝒇 𝑳෨ 𝑳෨ – generalized cavity length surface lead to
    fluctuations of ► Zero CTE point at 124 K
    Insensitive resonator ► Very low mechanical losses (φ≈10-8)
    length and eigen
    Vibrations Alternatives: ULE glass, sapphire, zerodur,
    mount frequency fused silica, GaAs (?).
    Temperature Stabilizing temperature Mirror coatings:
    Multilayer Bragg reflectors made from
    instability at zero CTE point SiO2/Ta2O5 (dielectric) or AlGaAs/GaAs
    Real setup:
    ► vacuum 10-9 mbar
    (crystalline). Both have excellent optical
    Thermal High-Q materials (Silicon properties, but crystalline mirrors are more
    ► 3 mK temperature stab.
    Simplified formula for 𝑇 ∙ 𝜑𝑐𝑜𝑎𝑡 ► Autonomous LN2
    noise substrates, GaAs mirrors) promising due to higher resistance to thermal
    estimation of thermal 𝜎𝑦 ~ 5/4 1/2 1/2 noise. They also demonstrate birefringence.
    generator
    noise floor: 𝐿 ∙λ ∙𝐸
    Lower temperatures (up
    to 4 K with Silicon) Spacer/ Mirror Contribution of Contribution 𝝈𝒚
    substrate substrate, % of coating, % ∙ 𝟏𝟎−𝟏𝟕
    ULE/SiO2 (77.5 mm) SiO2/Ta2O5 1 97 49
    Longer cavities
    Si/Si (77.5 mm) SiO2/Ta2O5 <1 99 22
    Si/Si (77.5 mm) AlGaAs 3 97 5 GaAs/AlGaAs
    ULE/SiO2 (480 mm) AlGaAs 1 88 7 multilayer Bragg
    SiO2/Ta2O5 reflectors
    Finesse≈580000
    FEA to find optimal support strategy and vibrational sensitivity
    77,5 mm

    Horizontal cavity mount Symmetric


    boundary
    48 cm long monolithic conditions to
    ULE cavity speed up
    calculations
    AlGaAs/GaAs
    Finesse≈250000

    Horizontal and vertical cavities


    ∆𝐿෨
    ത 𝑠ҧ = 𝑠 𝑇 + 𝑠 𝑅
    = 𝑠ҧ ∙ 𝑎,
    Sitall glass «bed» 𝐿෨
    Vibration Vertical Horizontal
    sensitivit cavity, 1/g cavity, 1/g
    y
    𝒔𝑹
    𝑿 2×10−8 2×10−10

    𝒔𝑻𝑿 2×10−8 1×10−10

    𝒔𝑹
    𝒀 2×10−8 4×10−11
    Finding Airy points 𝒔𝑻𝒀 2×10−8 4×10−11
    l = 98.68 mm, d = 74.46 mm 𝒔𝑹 8×10−12 2×10−10
    𝒁

    References 𝒔𝑻𝒁 1×10−10 3×10−10

    Models of vacuum chambers


    [1] D. Matei et al. Phys. Rev. Lett. 118, 263202 (2017)
    [2] S. Häfner et al. Opt. Lett., 40(9), 2112 (2015)
    [3] N. Zhadnov et al. Quantum Electronics, 48 (5), 425 (2018)
    480 mm

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