Index
A All-quartz package (AQP), 434
A-HDL, see Analog hardware description languages
(A-HDL)
Acoustic-based RF sensors, 418
acoustic-based transducers types, 422
all-quartz-package pressure-and-temperature
sensor, 436
AT-cut quartz, 435
design process, 424
emerging applications, 433
hydrogen detection, 435, 436, 437
implementation, 433
interrogation system, 419
phase velocity or attenuation changes, 419
physical properties, 418–419
SAW sensors, 419, 420, 421
sensors principle, 419
on single-crystal-based substrates, 418
stress sensitivity, 423
temperature and pressure sensors, 434, 436
temperature coefficients, 423
temperature measurements, 434
temperature sensor configurations, 423
theory elements, 422–423, 424
wireless SAW differential temperature sensor, 436
Acoustic coupling, 419
Acoustic transducers, 230
Acoustic wave devices, 433
Actuation, 77
AD, see Allan deviation (AD)
AD8362 converter, 430
Adaptive optics (AO), 61, 62
actuator side and mirror side, 63
displacement vs. applied voltage, 64
ideal and measured surface profiles, 64
large-scale DMs, 62
MEMS DMs, 62
piezoelectric actuator, 62
piezoelectric MEMS DM, 62, 63
PZT films, 65
Zernike modes, 64, 65
ADC, see Analog–digital converter (ADC)
Ad hoc on-demand distance vector routing (AODV),
406
ADXRS gyroscope displays, 73
AES analysis, see Auger electron spectroscopy analysis
(AES analysis)
AFE, see Analog front end (AFE)
AFM, see Atomic force microscope (AFM)
AGC, see Automatic gain control (AGC)
Airbag systems, 7
ALC, see Automatic level control (ALC)
ALD, see Atomic layer deposition (ALD)
Alkali niobate-based ferroelectric perovskite
materials, 53
pressure-and-temperature sensor, 436
Allan deviation (AD), 404
Allan variance, 72, 403
Aluminum nitride (AlN), 208, 361, 422
AM, see Amplitude modulated (AM)
Ambient energy harvesting, 132
ambient mechanical vibrations, 133–134
size matters, 133
system architecture, 132–133
Amplitude modulated (AM), 97
Amplitude regulation loop, 195; see also Oscillator-based
loop
Analog front end (AFE), 188
Analog hardware description languages (A-HDL), 153
Analog–digital converter (ADC), 188, 259, 406
Anchor loss, 282
Angle of arrival estimation (AoA estimation), 228
Angle random walk (ARW), 86
Angular gain estimation, 95
design parameters in BAW solid disk, 96
readout circuitry, 97–98
Annealing studies; see also Microelectromechanical
system (MEMS)
as-fabricated values, 37
capacitance density, 36
comparison of parameters, 36, 37
irradiation, 35
voltage-dependent capacitance, 35, 36
Antenna efficiency, 409
Anthropomorphic fingertip sensor, 361
Anti resonance frequency (ares), 141
AO, see Adaptive optics (AO)
AoA estimation, see Angle of arrival estimation (AoA
estimation)
AODV, see Ad hoc on-demand distance vector routing
(AODV)
AQP, see All-quartz package (AQP)
ares, see Anti resonance frequency (ares)
ARM-based hardware systems, 407
Artificial hollow fibers, 356
ARW, see Angle random walk (ARW)
Atomic force microscope (AFM), 15, 46
Atomic layer deposition (ALD), 22
Attitude complementary filter
Jacobian matrix, 320
quaternion product, 319
Attitude estimation
attitude complementary filter, 319–320
design state model, 318–319
rigid body kinematic motion equation, 318
Attitude representation mathematical model
quaternion algebra, 316
rotation matrix, 317
Auger electron spectroscopy analysis (AES analysis), 24
Automatic gain control (AGC), 195
441
 442 Index

Automatic level control (ALC), 75 resonance frequency, 206

Automotive applications, 433 SMR, 207, 208
TOSL, 220
B VNA measurement, 220
Bulk-acoustic waves (BAW), 285, 287, 418
Back-end-of-the-line (BEOL), 119 BAW modeling, 209–210
Ball-grid array (BGA), 308 filters, 205
flip chip processes, 117 mBVD model, 212–213
Bandgap (BG), 8 physics-based 1D Mason model, 210–212
Bandwidth (BW), 72, 166 sensors, 421–422
of detectable rotation rate, 168 thin-film-based, 418
of detectable rotation signal, 167 for wired sensor developments, 418
of drive mode, 166 Bulk-mechanical technologies, 70
of noise folding, 177 Buried oxide (BOX), 92
unmatched and matched modes, 167 Butterworth Van Dyke model (BVD model), 212
Barkhausen criterion, 166 BW, see Bandwidth (BW)
BAW, see Bulk-acoustic waves (BAW)
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BEM, see Boundary element methods (BEM) C

BEOL, see Back-end-of-the-line (BEOL)
Berkeley’s z-axis vibratory rate gyroscope, 72, 73 C−f measurements, see Capacitance–frequency
BG, see Bandgap (BG) measurements (C−f measurements)
BGA, see Ball-grid array (BGA) CA, see Collision avoidance (CA)
Bias Cantilever beam model, 142; see also Piezoelectric
drift, 72 MEMS vibration energy harvesters
instability, 403 analytical modeling results, 152
stability, 72 boundary conditions, 145
Bio-logging, 314, 315 comparison with experimental data, 148
Biosensor application, 117 comparison with FEM, 148
Blackbody radiation, 385 damping types, 146
Body motion analysis (BMA), 401 geometry of modeled device, 143
Body motion detection, 408 layer composition of beam, 144–145
Bottom-up nanotechnologies, 15-16 MEMS energy-harvesting device extracted
Boundary element methods (BEM), 424 parameters, 150
BOX, see Buried oxide (BOX) MEMS specificity, 142
Bulk acoustic wave gyroscope (BAW gyroscope), 91, 419 modeled cantilever beam structure, 144
angular gain estimation, 95–96 modeling results, 148
ANSYS simulation results, 102 optimal resistance values, 149
applications, 91 optimal thickness ratio, 152
dynamic range, 98–99 piezoelectric coupling, 145–146
fabrication method, 103 piezoelectric layer thickness, 151
frequency characterization, 103, 104 piezoelectric MEMS energy generator underetch, 150
implementation of, 101 power generation, 149
mode matching, 103, 104 result comparison, 151
performance characterization, 104 structure optimization, 151
process flow, 103 system dynamics, 146–147
quality factor characterization, 104–106 thin-layer piezoelectric materials, 142
effect of release hole sizes, 102 Capacitance–frequency measurements (C−f
resolution analysis, 98 measurements), 31
sensitivity analysis, 96–98 Capacitance–voltage characteristics (C–V characteristics);
thermoelastic damping, 99–101 see also Current–voltage characteristics (I−V
Bulk acoustic wave resonators (BAW resonators), 206 characteristics)
configurations, 206, 207 as-fabricated capacitors, 30
electrical performance, 208 control experiment, 31
electromechanical coupling coefficient, 213–214, 216 DC bias dependence, 30
FBAR, 207, 208 dielectric constant, 30
free-standing, 206 dispersive behavior, 29
GSG geometry, 220 HfO2 capacitors, 30
high-Q SMRs, 220–223 MIM capacitor structures, 29
impedance characteristics of, 209 oxygen vacancy defect, 30–31
measurement setup, 219 zero-biased capacitance density, 29
MIM capacitor, 209 Capacitance–voltage measurements
performance parameters for, 213 capacitor S-2, 26
piezoelectricity to impedance curves, 208 DC electric field, 25
quality factor, 214–216, 220 frequency-dependent capacitance, 26
 Index
frequency function, 26
on MIM capacitors, 25
temperatures equation, 25
voltage nonlinearity, 26
Capacitive MEMS gyroscopes
Coriolis effect, 161–164
drive mode excitation, 165–167
matched vs. unmatched modes, 167–168
Capacitive MEMS ultrasonic transducer (CMUT),
228, 230
AoA estimators, 235–236
covariance matrix, 236
low-frequency ultrasonic signals, 235
sensor array, 235
Capacitive sensors, 355
CMOS microelectronic circuits, 358
cross-section, 358
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MEMS fingerprint sensor, 356
normal and shear forces, 357
PDMS, 357
pixel FIB cross-section, 356
on polyimide flexible substrate, 356
schematic view, 357
variable capacitor, 355
wearable-tactile-sensor glove, 357
Capacitive transduction
beam resonator, 276
electrode overlap area, 277
electrostatic force, 276
filtering process, 275
Capacitors, 21, 22
Carbon contamination
AES and SEM, 25
Auger depth profile, 24
hafnium deposition, 24
high-κ dielectric materials, 24
oxygen vacancy concentration, 24
SiO2/Ti/Pt/HfO2, 25
Carbon microcoil (CMC), 364
Carbon nanotube forest (CNT forest), 341
Carrier sense multiple access (CSMA), 406
CCD, see Charge coupled device (CCD)
CDS, see Correlated double sampling (CDS)
Charge-sensitive amplifier (CSA), 173
feedback resistors, 173
SNR at output, 174
transistor size equations, 174
Charge coupled device (CCD), 268
Chebyshev filters transfer functions, 294, 295
Chemical and mechanical planarization (CMP), 126
Chemical etching process, 4
Chemical sensor, 435, 436
hydrogen detection, 436, 437
SAW propagation conditions, 436, 437
Chemical solution deposition (CSD), 42
Chemical vapor deposition (CVD), 42
Chopper stabilization (CHS), 175, 176
Cladding fabrication process, 124
Clamped–clamped beam resonator, 286
Closed-loop control, 430
Closed-membrane-based micro hot-plate emitters, 382
CMC, see Carbon microcoil (CMC)
CMOS, see Complementary metal-oxide-semiconductor
(CMOS)
443
CMP, see Chemical and mechanical planarization (CMP);
Prechemical mechanical polishing (CMP)
CMUT, see Capacitive MEMS ultrasonic transducer
(CMUT)
CNT forest, see Carbon nanotube forest (CNT forest)
Coefficient of thermal expansion (CTE), 117, 339
Collision avoidance (CA), 406
Comb resonator, 285
COM model, see Coupling of mode model (COM model)
Complementary metal-oxide-semiconductor (CMOS),
112, 133, 184, 208, 299, 428
circuitry, 70
clamped–clamped beam resonator, 300, 302
novel process, 299, 300
Q-factor, 301
SEM picture, 301
tuning scheme, 300
Complete system modeling, 153, 154–155
design flow, 153–154
evaluation, 155
for MEMS gyroscope, 197
Monte-Carlo simulation results, 155–156
piezoelectric generator, 153
process variation, 155
steps in A-HDL model creation, 154
Conductive nanoparticles, 363
Conductive polymers (CP), 362
CMCs, 364, 365
conductive filler particles, 362, 363
conductive nanoparticles, 363
fabrication technique, 364
ionic polymer layer, 362
IPMC sensing mechanism, 362
MEMS tactile sensors, 365
novel and bioinspired approach, 364
percolation threshold, 363
polymer-based tactile sensors, 362
sensor array, 364
source electrode, 363
source–drain electrode, 363
Consumer electronics applications, 70
Continuous-time sensing, 168; see also Discrete-time
sampling
input impedance, 169
open-loop amplifiers, 169–172
TIAs, 170, 172–174
variable capacitors and interface circuits interface,
168–169
Continuous self-test (CST), 195–196
Continuous time (CT), 79
Coriolis acceleration, 161
Coriolis effect, 161
capacitive MEMS vibratory gyroscope, 163
capacitive sensor, 164
Coriolis force, 162–163
driving force, 164
governing equations, 163
inertial frame of reference, 162
movements in sense mode, 164
moving particle trajectories, 162
vibratory gyroscope model, 163
Coriolis vibratory gyroscope (CVG), 76
Coriolis-based MEMS gyroscope system, 187–188
Coriolis-induced displacement, 168
 444 Index

Coriolis-induced sense mode deflections, 71 d- and e-forms expression, 46–47

Correlated double sampling (CDS), 175, 176
Coupling factors, 296
Coupling of mode model (COM model), 424
CP, see Conductive polymers (CP)
Critical coupling, 139
analytical modeling results, 139–140
electromechanical coupling coefficient, 139
Crystal-based sensors, 422
CSA, see Charge-sensitive amplifier (CSA)
CSD, see Chemical solution deposition (CSD)
CSMA, see Carrier sense multiple access (CSMA)
CST, see Continuous self-test (CST)
CT, see Continuous time (CT)
CTE, see Coefficient of thermal expansion (CTE)
Current–voltage characteristics (I−V characteristics),
31, 32; see also Capacitance–voltage
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mechanical properties, 47
P−E hysteresis curves, 46
piezoelectric thin films, 46
PZT, 44
transverse piezoelectric coefficient, 47
unimorph cantilever, 47
XRD patterns, 45
Digital gyroscope; see also Vibratory gyroscope
ideal CMOS system design, 187–188
system design of, 187
Digital signal-processing (DSP), 241, 431
Diode-pumped solid-state (DPSS), 256
Direct digital synthesizer (DDS), 426
Direct-coupled motions, 179–180
Direct-sequence spread spectrum (DSSS), 405
Discrete-time sampling, 174

characteristics (C–V characteristics) CDS approach, 176

Curved beam design, 118 CHS approach, 175, 176
CVD, see Chemical vapor deposition (CVD) noise folding, 176–177
CVG, see Coriolis vibratory gyroscope (CVG) noise spectral density, 175
SNR after sampling, 177
D typical SC amplifier, 175
Discrete Fourier transform (DFT), 242
Damping Dispersion behavior, 23
gas, 282 DI water, see Deionized water (DI water)
influence, 137–138 DM, see Deformable mirror (DM)
TED, 99–101 DPSS, see Diode-pumped solid-state (DPSS)
types, 146 Draper Laboratory’s silicon-on-glass tuning fork
Data acquisition system gyroscope, 72, 73
DPSS interference signal, 261, 262 DRIE, see Deep reactive ionic etching (DRIE)
driving signal, 259 Drift over time and temperature, 190, 191
interferogram, 260, 266 Drive channels, 84, 85
resonance operation, 260 Drive loop, 192
DBA, see Dynamic body acceleration (DBA) amplitude regulation loop, 195
DDS, see Direct digital synthesizer (DDS) oscillator-based loop, 192–194
DE, see Dielectric elastomers (DE) phase issues in, 180
Dead reckoning technique PLL-based, 194–195
DBA, 324 Drive mode excitation, 165
key phases in stride, 325 bandwidth of mode, 166
terrestrial animal locomotions, 325 Barkhausen criterion, 166
velocity vector, 326 displacement amplitude, 166
Deep reactive ionic etching (DRIE), 4, 56, 150, 251 drive mode transfer function, 165
Defect density analysis, 27, 28, 29 electrostatic force, 165
Debye length calculations, 28 energy stored in capacitor, 165
double-layer capacitance expression, 27 interface circuits, 166
interatomic distance, 27, 28 self-oscillation loop, 166, 167
metal–oxide interface, 29 Drive phase
MIM capacitors S-1 and S-2, 28 correction, 191
relative variation of capacitance, 28 error, 189, 190
Deformable mirror (DM), 61 DSP, see Digital signal-processing (DSP)
Deionized water (DI water), 337 DSSS, see Direct-sequence spread spectrum (DSSS)
Delay-line-based approaches, 425 Dynamic body acceleration (DBA), 314
FEMTO-ST, 425, 426 Dynamic range, 72
open-loop strategy diagram, 426 analytical estimation, 99
programmable attenuator, 426–427 by front-end T-network TIA, 83
spectral transfer function, 425 in gyroscopes, 98, 99
to stabilize oscillators, 425 microgyroscope, 72
using SYPD-2 phase detector, 427
DFT, see Discrete Fourier transform (DFT) E
Diamond-disk resonator, 288
Dielectric elastomers (DE), 372 EAP, see Electroactive polymers (EAP)
Dielectric properties, 44; see also Transverse Effective quality factor (Q), 99
piezoelectric properties EIT, see Electrical impedance tomography (EIT)
 Index 445

Electrical impedance tomography (EIT), 362
Electrical parameters
carrier relaxation frequency, 34
defect densities, 34, 35
electrode polarization model, 32
failed devices, 33–34
good devices, 32, 33
leakage current densities, 35
radiation-induced changes in, 31, 32
voltage dependence, 33
Electrical signal, 430
Electroacoustic coupling, 419
Electroactive polymer actuators (EAP actuators),
371–372
DE, 372
electromechanical actuators, 372
HCDE actuator, 373
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Fast Fourier transform technique (FFT technique), 428
Fast heating process, 387
Fast transient operation, 381
Fault monitors, 196
FBAR, see Film bulk acoustic resonator (FBAR)
FBG, see Fiber-Bragg grating (FBG)
FEA, see Finite element analysis (FEA)
FEM, see Finite element method (FEM)
FeRAM, 42
Ferroelectric properties, 44
d- and e-forms expression, 46–47
materials, 45
mechanical properties, 47
P−E hysteresis curves, 46
piezoelectric thin films, 46
PZT, 44
transverse piezoelectric coefficient, 47

stack actuator, 372 unimorph cantilever, 47

static and dynamic actuation, 373 XRD patterns, 45
tactile actuator, 373 FFT technique, see Fast Fourier transform technique
Electroactive polymers (EAP), 351 (FFT technique)
Electrode polarization mechanism, 27 FHSS modulation, see Frequency-hopped spread
Electromagnetic wave (EM wave), 405, 430 spectrum modulation (FHSS modulation)
Electromechanical coupling coefficient, 213–214, 276 Fiber tactile sensor, 357
FOM, 216 Fiber-Bragg grating (FBG), 365
piezoelectric film quality, 214 FIB process, see Focused ion beam process
for piezoelectric material, 214 (FIB process)
Electromechanical film transducers (EMFi transducers), Field programmable gate arrays system (FPGA system),
227, 230 262
Electromechanical oscillator, 75, 76 Figure of merit (FOM), 216
Electronic control systems Film bulk acoustic resonator (FBAR), 207, 422
drive loop, 75, 76 Mason model for, 212
in gyroscopes, 75 robustness, 208
micromachined vibratory gyroscope system, 75 Fingerprint region, 397
mode matching, 76 Finite element analysis (FEA), 423
quadrature nulling, 76 Finite element method (FEM), 134, 383
self-test and trim, 76 acceptable complexity, 390
sense channel, 76 analysis, 389, 390, 391
Electronic noise equivalent rotation (ENEΩ), 71 buckling mode shapes, 391
Electronic stability control (ESC), 200, 201 hot-plate temperature, 390, 391
Electroplating process, 120 micro hot plates design process, 389
Electrostatic microactuator, 56 SOI wafer, 389
Elliptic waves, 420 standard suspension bar design, 389
EM wave, see Electromagnetic wave (EM wave) stress–strain behavior, 391
EMFi transducers, see Electromechanical film suspension bars, 391
transducers (EMFi transducers) temperature distribution, 390
Energy-blocking parameter, 33 thermal radiation, 390
ENEΩ, see Electronic noise equivalent rotation (ENEΩ) Flexible I/Os, 116, 117
Epitaxial substrates, 43 Flexural plate wave (FPW), 59
ESC, see Electronic stability control (ESC) Flicker noise, 403
External location-aware devices, 401–402 Fluorescein, 338
Focused ion beam process (FIB process), 8
F FOM, see Figure of merit (FOM)
Fourier transform-based spectrometers
Fabricated microelectromechanical resonators (FT spectrometers), 249
CMOS, 299–301 Fourier transform infrared spectrometers
free–free beam resonators, 301–302 (FTIR spectrometers), 249
radial mode disk resonators, 302–304 lamellar grating interferometer, 251
resonator-based systems, 304–309 MEMS-driven review, 250
Fabrication process, 51, 230 Michelson interferometer, 250
microspectrometer microscopic image, 256 Fourier’s law, 384
photolithography process, 254 FPGA system, see Field programmable gate arrays
schematic process flow, 255 system (FPGA system)
Fast adaptation receptor (FA receptor), 352 FPW, see Flexural plate wave (FPW)
 446 Index

Free–free beam resonator, 286, 302, 303 deposition and thermally grown layers, 23–24
polysilicon resonator, 301 deposition techniques, 22–23
quality factor, 302, 303 PVD deposition approaches, 22
Frequency pulling High-aspect ratio poly-and single-crystalline silicon
resonant frequency, 281 process (HARPSS process), 74
spring softening, 280 High-overtone bulk acoustic resonator (HBAR), 422
Frequency shift keying transmitter (FSK transmitter), High-Q solidly mounted resonators, 220
307, 308, 309 comparisons between impedance curves, 221, 222
cap wafer, 308 He-ion microscope image, 221
free–free beam resonator, 308 limitation with US-PCS standard, 220–221
output center frequency, 309 with optimized reflector stacks, 221
Frequency-hopped spread spectrum modulation (FHSS quality factor scaling, 222–223
modulation), 228 shear-optimized stacks, 223
FSK transmitter, see Frequency shift keying transmitter High-voltage (HV), 188
(FSK transmitter) High-κ dielectric materials, 24
FT spectrometers, see Fourier transform-based High-κ gate dielectrics, 22
spectrometers (FT spectrometers) Hollow-disk ring resonator, 289
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FTIR spectrometers, see Fourier transform infrared Hostile environment, 22

spectrometers (FTIR spectrometers) Hot-plate suspension, 386
Functional materials, 41 Human pedestrian locomotion
inertial measurement unit Mti, 326
G linear velocity estimation, 328
measured acceleration squared norm, 327
Gain–bandwidth (GBW), 172 3D walking trajectory, 326
Gallium nitride (GaN), 361 Human skin receptors, 353
Gaming, 198 HV, see High-voltage (HV)
GaN, see Gallium nitride (GaN) Hydrofluoric acid (HF), 255
Gas damping, 282 Hydrogel microstructures, 335
Gauge factor (GF), 358 Hydrogel RF actuation
GBW, see Gain–bandwidth (GBW) fabricated sample LC heater circuit, 336
GF, see Gauge factor (GF) using fluorescein, 338
Giant magneto resistance (GMR), 5, 369 frequency dependence, 337
Global positioning system (GPS), 70, 320, 402 hydrogel and Cirlex surfaces, 336, 337
GMR, see Giant magneto resistance (GMR) hydrogel microstructures, 335
GPS, see Global positioning system (GPS) PNIPAM, 335
Gyroscope, 69, 184 preliminary release tests, 337
demonstration, 70 UV light, 336
drift over time and temperature, 190 wireless LC heater circuit, 335
drive phase error, 189, 190 wireless release control, 338
electronic control systems in, 75–76 Hydrogen detection, 436, 437
MEMS gyroscopes applications, 70 Hydrostatically coupled dielectric elastomers
micromachined gyroscopes, 72–74 (HCDE), 372
offset error, 189 Hysteresis, 354
performance metrics, 71–72
principle of operation, 70 I
quadrature error, 189
signal and error spectrum, 189 I−V characteristics, see Current–voltage characteristics
Gyro sensors, 42 (I−V characteristics)
IC, see Integrated circuit (IC)
H Ideal CMOS system design, 187–188
IDT, see Interdigital transducer (IDT)
Hafnium deposition, 24 IFA, see Inverted-F antenna (IFA)
Hair follicle receptors, 352 IL, see Insertion losses (IL)
HARPSS process, see High-aspect ratio poly-and single- Implantable drug-delivery devices, 331
crystalline silicon process (HARPSS process) fabricated sample LC heater circuit, 336
HBAR, see High-overtone bulk acoustic resonator (HBAR) using fluorescein, 338
HCDE, see Hydrostatically coupled dielectric elastomers frequency dependence, 337
(HCDE) hydrogel and Cirlex surfaces, 336, 337
Heater sensor layout hydrogel microstructures, 335
design, 388–389 PNIPAM, 335
material considerations, 388 preliminary release tests, 337
HF, see Hydrofluoric acid (HF) UV light, 336
HfO2 thin film fabrication, 22 wireless LC heater circuit, 335
capacitors to temperature, 23, 24 wireless release control, 338
 Index
IMU, see Inertial measurement unit (IMU)
In-phase/quadrature demodulator (I/Q demodulator), 427
Industrial, scientific, and medical band (ISM band), 428
Inertial measurement unit (IMU), 70, 314, 315, 321, 401
Allan deviation, 404
complementary filter efficiency, 321
difference between calculated quaternion, 323
external location-aware devices, 401–402
gyroscope error sources, 403
inertial and magnetic measurements, 322
inertial navigation, 402, 403
using low-power wireless transceivers, 402
MEMS accelerometer, 403
MEMS IMU error characteristics, 403, 404
quaternion estimation, 320
Inertial navigation, 402, 403
Inertial sensor node (ISN), 401
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antenna, 408–409
duty cycles, 412
energy consumption, 410
event-trigger, 410
hardware design, 407–408
movement detection cycle, 410
nodes, 414
optimal power-saving scenario, 412
software components, 409
structure and measured antenna parameters, 411
Tiny OS, 409
WSN-enabled, 407
Infrared (IR), 343
Insertion losses (IL), 425
Integrated circuit (IC), 22, 56, 273, 432
Integration methods, 113
CMOS and MEMS hybrid integration, 114, 115
CMOS and MEMS monolithic integration, 113
contamination concerns, 114
conventional integration methods, 115
hybrid integration, 114–115
integration method and 3D integration, 115, 116
I/O and 3D bonding technologies, 115
MEMS integration stress, 116
monolithic integration, 113
pad capacitance, 114
process limitations, 115
3D integration, 116
Interatomic distances, 34, 35
Interdigital transducer (IDT), 59, 419
Interface contamination, 24
carbon contamination, 24, 25
changes in electrical parameters, 25, 26
defect density analysis, 27, 28, 29
International Technology Roadmap for Semiconductors
(ITRS), 24
Interrogation range, 428
Interrogation techniques, 424, 425
wired approach, 425–428
wireless approach, 428–433
Intradermal medical injector, 12
Inverted-F antenna (IFA), 408
Ion-polymer metal composite (IPMC), 362
Ionomer membrane porous silicon, 13
IPMC, see Ion-polymer metal composite (IPMC)
I/Q demodulator, see In-phase/quadrature demodulator
(I/Q demodulator)
447
IR, see Infrared (IR)
Irradiations, 31
effects, 32
MIM capacitors, 33
ISM band, see Industrial, scientific, and medical band
(ISM band)
ISN, see Inertial sensor node (ISN)
ITRS, see International Technology Roadmap for
Semiconductors (ITRS)
K
k2eff, see Electromechanical coupling coefficient
Kirchhoff’s law, 385
L
Lamellar grating interferometer
diffracted wave amplitude, 251, 252
Folded-beam suspension structure, 254
MEMS-driven, 253–254
spectral resolution, 253
Laplace response, 232
LCST, see Lower critical solution temperature (LCST)
Lead zirconium titanate (PZT), 41, 208, 360
crystal structure, 43, 44
rf-magnetron sputtering, 42
thin films, 41, 42, 59
Lead-free piezoelectric thin films, 53
ferroelectric perovskite materials, 53
KNN films on MgO and Si, 55
KNN/MgO or KNN/Si unimorph cantilever, 54, 55
KNN thin films, 54
Rf-magnetron sputtering, 53
transverse piezoelectric coefficient, 55
Leakage current density, 33
LED, see Light-emitting diode (LED)
Levenberg–Marquardt algorithm (LMA), 314
LIGA techniques, see Lithographie, Galvanoformung,
Abformung techniques (LIGA techniques)
Light-emitting diode (LED), 269, 365
LiNbO3, see Lithium niobate (LiNbO3)
Linearity, 354
Lithium niobate (LiNbO3), 430
Lithographie, Galvanoformung, Abformung techniques
(LIGA techniques), 6
LMA, see Levenberg–Marquardt algorithm (LMA)
LNA, see Low-noise amplifier (LNA)
Local positioning system (LPS), 227, 241
Local tangent plane (LTP), 316
Loss mechanisms, 216; see also Quality factor (Q factor)
acoustic leakage, 217–218
electrical losses, 216
scattering losses, 217
viscous losses, 217
Low power consumption, 381
Low-noise amplifier (LNA), 290
Low-noise wide-dynamic-range T-network TIA, 81
circuit schematic T-network TIA interface, 81
core amplifier and T-network TIA, 84
design considerations, 81, 82
T-network TIA front end characterization, 82, 83, 84
transimpedance gain characterization, 83
Lower critical solution temperature (LCST), 332
 448
LPS, see Local positioning system (LPS)
LTP, see Local tangent plane (LTP)
Lumped element model, 383
M Coriolis-based, 187–188
M2-TFG, see Mode-matched tuning fork gyroscope
(M2-TFG)
MAC layers, see Medium access control layers (MAC
layers)
Magnetic actuators
electrostatic or piezoelectric, 374–375
flexible membrane, 375
free-standing membranes, 377
magnetic PDMS membrane, 376, 377
RMS, 376
static and dynamic behaviors, 375
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vibrotactile electromagnetic actuator, 375
VITAL display, 375, 376
Magnetic sensor package measurement models
Magnetic tactile sensor, 367
Magneto-inductive sensors
detection, 368
GMR, 369
magnetic tactile sensor, 367
magnetically driven sensor structure, 368
operational modes, 367, 368
planar coil, 367
silicone rubber, 368
2D spiral-shaped coil matrix, 369
unit cell top view, 369
Mass–spring–damper mechanical system, 277
mBVD model, see modified Butterworth Van Dyke model
(mBVD model)
MCU, see Microcontroller (MCU)
MD, see Mobile device (MD)
MEA, see Microelectrode array (MEA)
Mechanically flexible interconnect (MFI), 116, 118
ANSYS FEM simulation comparing, 118
curved beam and cantilever design comparison, 118
curved beam design, 118
high-yield-point material uses, 119
mechanical testing, 120
microscope and SEM image versions, 119
oxidation prevention, 119
SEM image showing curved profile, 119
tapered interconnect structure, 118
Mechanical noise equivalent rotation (MNEΩ), 71
Mechanically flexible interconnections, 116, 117
Medium access control layers (MAC layers), 405
Meissner’s corpuscles, 364
MEM resonators, see Microelectromechanical resonators
(MEM resonators)
MEMS-based circuits, 29
MEMS-driven lamellar grating interferometer
device design, 253–254
experimental results, 255–258
fabrication process, 254–255
lamellar grating structure, 257
movable finger deflection, 256
OPDs intensity, 258
optical testing systems schematics, 257
reflected light beams images, 257
spectrum reconstruction, 258
Index
Zygo optical profilometer, 255
MEMS, see Microelectromechanical system (MEMS)
MEMS gyroscope, 184
complete system, 197
CST function use, 195
ESC, 200, 201
gaming, 198
navigation, 201
OIS, 198
signal and errors spectrum, 189
3D motion capture, 200
Mesh-coupled ladder, 295–296
Metal–insulator–metal capacitor (MIM capacitor), 21,
22, 209
capacitance density, 23
carbon contamination on, 24
with HfO2 high-κ dielectric films, 23
schematic cross-section, 23
Metal organic chemical vapor deposition (MOCVD), 22
Metal oxide-based gas sensors, 395
alumina ceramic tube, 396
finger electrodes, 396
last cross-sensitivity, 395–396
nanostructured metal oxide, 396, 397
oxidizing and reducing gases, 395
temperature distribution, 397
Metal–oxide–semiconductor capacitors (MOS
capacitors), 21, 22
MFI, see Mechanically flexible interconnect (MFI)
Micro hot-plate fabrication, 391–392
fragile devices, 393
photolithographical process, 392
Si3N4 layer, 392
silicon membranes, 393
SiO2, 392
thermal emitter hot plate, 392
thermal hot plate, 392
Micro hot plates
closed membrane, 382
design process for, 383
devices, 381
electrical characterization, 393
FEM analysis, 389, 390, 391
fine design process, 383
heater and temperature sensor layout, 388–389
hot-plate design, 386–387, 388
measurements in vacuum chamber, 394
for metal oxide-based gas sensors, 395–396, 397
modulation heater temperature, 393
radiation power measurement, 395
spectroscopic transmission gas measurement, 397
static electric investigations, 393, 394
suspension bar, 382, 388
for thermal emitters, 397, 398
thermal energy transfer, 383–386
transient characteristics determination, 394
transient investigations, 394, 395
V–I characteristics, 393
Micro-electro-discharge machining (μEDM), 339
Micro-opto-electromechanical systems (MOEMS), 8
Microactuator fabrication, 55
optical MEMS, 61–63, 64, 65
piezoelectric cantilevers, 55, 56
 Index 449

piezoelectric MEMS devices, 55 gyroscope system, 187–188

piezoelectric MEMS switches, 56, 57, 58 IMU, 403
piezoelectric micropumps, 58, 59, 60, 61 IMU error characteristics, 403, 404
Microcantilever, 55 integration stress, 116
Microcontroller (MCU), 401 interconnect performance, 112
Microelectrode array (MEA), 361 Law, 112
Microelectromechanical resonator arrays mechanical defects of manufacturing process, 184
clamped–clamped resonator array, 297, 298 micro hot-plate devices, 381–382
mismatched resonator transfer functions, 298, 299, 300 microvalves types, 332
resonator coupling, 297 need for integration, 112
Microelectromechanical resonator filters polymer, 351
Chebyshev filters transfer functions, 294, 295 reliability, 195
coupling capacitances, 296 sense of touch, 352, 353, 354, 355
electrostatic transduction, 293 SMA actuators, 333
lumped coupler T-model, 295 specificity, 142
RLC series resonant circuit, 292, 293 state of art, 382, 383
triple clamped–clamped resonator filter, 293 switches, 56
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Microelectromechanical resonators (MEM resonators), tactile actuator materials, 351, 352

273 tactile sensor materials, 351, 352
array-based oscillators, 307 technologies, 41
capacitive transduction and sensing, 275–277 temperature compensation, 197
clamped–clamped beam resonator, 286 thermal actuators, 332
comb resonator, 285 Microelectronics, 3
diamond-disk resonator, 288 C-MOS transistor, 3
disk resonator arrays transfer characteristics, 306 mechanical couple and power, 5–6
effective damping factor, 279 micromechanisms realization, 4–5
electrical effects, 277 microsystems application fields, 6–14
electrical–mechanical analogy, 278 Microfluidic systems, 58
energy loss mechanisms, 282–283 Microgyro front ends, 79; see also Transimpedance
free–free beam resonator, 286 front ends
frequency pulling, 280–281 Microgyro interfacing
highest-Q resonator structure, 305 M2-TFG, 78
hollow-disk ring resonator, 289 micromachining techniques, 78
mass–spring–damper mechanical system, 277 motional current, 77
modeling, 277 Micromachined gyroscopes, 70
nonlinear effects, 280–282 Berkeley’s z-axis vibratory rate gyroscope, 72, 73
oscillators, 284–285 Draper Laboratory’s silicon-on-glass tuning fork
power handling, 281–282 gyroscope, 72, 73
principle, 274–275 HARPSS process, 74
pull-in voltage, 281 micromachined silicon gyroscope, 73
quality factor, 275 performance, 88
radial–contour mode resonator, 287 polysilicon vibrating ring gyroscope, 74
resonant frequency, 285 using SOI technology, 73, 74
RLC mechanical mapping analogy, 278 surface micromachined gyroscopes, 73
small-signal electrical model, 280 vibratory gyroscope structures, 72
stemless wineglass resonator, 288 Micromechanism realization
transfer function, 284 all-silicon microengine, 5
wineglass mode resonator array, 306 chemical etching process, 4
Microelectromechanical resonator transceivers with mobile parts, 4
MEMS-based receiver architecture, 292 two-axis gyrometer, 4, 5
offchip components, 291 Microsystems, 3
Q-factor, 290 affymetrix gene chip arrays, 14
super-heterodyne receiver architecture, 290 MEMS memory millipede scanner principle, 15
Microelectromechanical system (MEMS), 4, 69, 111, 2D-Cantilevers chip array command, 15
228, 249, 351, 381 Microsystems application fields
accelerometer errors, 403 airbag systems, 7
activation electrodes/interconnects, 331–332 fuel injection jet pressure microsensor, 8
bootstrapping, 112 microsystems exploring applications, 7–14
circuit and device design, 112 precursor domains, 6–7
Coriolis sensing fingers, 188 Microsystems exploring applications
CST, 195 cMUT principle, 11
devices, 29, 332, 352 diffusion time comparison, 12
drug release, 331 elementary fuel cell under electrical tests, 13
fault monitors, 196 intradermal medical injector, 12
 450 Index

Microsystems exploring applications  (Continued) SMA actuators, 341, 342

ionomer membrane porous silicon, 13 SMA cantilever actuator, 345
NAFION, 11, 13 theoretical volume, 345, 346
with nanotechnologies, 7 wireless activation, 343
PEM hydrogen fuel cell, 12 working principle, 342
photonic crystal optical modulator, 9 Multiscaling modeling, 17
phoXonic crystal filter-modulator, 10 μEDM, see Micro-electro-discharge machining (μEDM)
protein crystallizations, 11
route planners, 8 N
voltage and current density, 14
Miller effect, 170 NAFION, 11, 13
MIM capacitor, see Metal–insulator–metal capacitor nanoelectromechanical systems (NEMS), 18
(MIM capacitor) Nanoelectronics, 4; see also Ultra-miniaturization
Mimicking human tactile sensing, 354 Nanoparticle (NP), 376
Miniature gyroscopes, 70 Natural convection, 384
MIRL17–900, 382 Navigation, 201
Mixed matrix approach, 422 Navigation-grade gyroscopes, 75
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MNEΩ, see Mechanical noise equivalent rotation NDIR systems, see Nondispersive infrared systems
(MNEΩ) (NDIR systems)
Mobile device (MD), 240 NEMS, see nanoelectromechanical systems (NEMS)
MOCVD, see Metal organic chemical vapor deposition Network layers, 406
(MOCVD) Nintendo Wii Motion Plus dongle, 199
Mode-matched tuning fork gyroscope (M2-TFG), 77 Noise folding, 176–177
interface electronics, 78 Nondispersive infrared systems (NDIR systems), 397
and mode shapes, 77 Nonidealities
noise floor and long-term stability, 86 considerations for, 178
Mode-matched tuning fork gyroscope, 77 direct-coupled motions, 179–180
CMOS ASIC, 87 phase issues in drive loop, 180
drive and sense channels, 84, 85 quadrature error, 178–179
HARPSS, 78 Nonvolatile memory (NVM), 196, 197
key sensor and IC parameters, 87 NP, see Nanoparticle (NP)
large motional impedances, 78 NVM, see Nonvolatile memory (NVM)
low-noise wide-dynamic-range T-network TIA, 81–84
M2-TFG and mode shapes, 77 O
M2-TFG interface electronics, 78
microgyro front ends review, 79 Off-chip tanks, 285
root-Allan variance, 86 Offset error, 189
scale factor, 85 correction, 190, 191
system integration, 86, 87 OIS, see Optical image stabilization (OIS)
TIA interface, 79, 80 One-port RF characterization, 220
modified Butterworth Van Dyke model (mBVD model), OPD, see Optical path difference (OPD)
212–213 Open-loop amplifiers, 169; see also Transimpedance
MOEMS, see Micro-opto-electromechanical systems amplifier (TIA)
(MOEMS) AC signal at input node, 170
Monolithic integration, 113 GBW, 172
Monolithically integrated chips, 113 Miller effect, 170
Morphotropic phase boundary (MPB), 43 MOSFET flicker noise, 171
MOS capacitors, see Metal–oxide–semiconductor noise issue, 170–171
capacitors (MOS capacitors) output signal of, 170
MOS-bipolar pseudo-resistors, 81 SNR equation, 171
MOSFET flicker noise, 171 spectral density of shot noise, 171
Motion, 198 thermal noise, 171–172
Mouse system design, 371 transistor transconductance, 172
MPB, see Morphotropic phase boundary (MPB) Optical gyroscope technologies, 70
Multiphysics modeling, 17 Optical image stabilization (OIS), 198
Multiple microactuators block diagram, 198
experimental setup, 345 correction using lens, 198, 199
fabricated device components, 342 photograph with and without, 199
in vivo drug-delivery applications, 341 Optical path difference (OPD), 250
microsyringe development, 343 Optical sensors
perforated bonding cavity, 343 bending effect, 366
preliminary wireless tests, 343, 344 FBG, 365
reservoir squeezing, 346 FBG schematic view, 365
selective wireless activation, 344 force and light pattern generation, 367
 Index 451

LED, 365 Bimorph piezoelectric cantilever, 371

LED-based sensor, 366 mouse system design, 371
POF sensor, 366 Piezoelectric bandwidth modification
tactile sensors, 365, 367 compensated receiver piezoelectric equivalent
thermal effect and strain, 365 circuit, 233
Optimal resistive load, 137 equivalent circuit, 231, 232
Oscillator approaches, 427, 428 frequency response, 233
Oscillator-based loop, 192; see also PLL-based drive loop Laplace response, 232
based on electromechanical oscillator, 193 maximum impedance, 233
dependency, 194 piezoelectric resonant frequency, 231, 234
resonator as second-order system, 193 transducer test circuit, 234
Oscillator-based solutions, 427 Piezoelectric cantilever microfabrication
using HNO3 + HF solution, 55, 56
P length and width, 56
microcantilever, 55
PA, see Power amplifier (PA) using photolithography, 55
Pacinian corpuscles, 352 piezoelectric microcantilever function, 57
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Package-induced stress, 117 piezoelectric unimorph cantilevers, 56

Pad capacitance, 114 process sequence, 55
Partial differential equation (PDE), 99 PZT thin films on Si substrate, 57
Particle image velocimetry (PIV), 59 Piezoelectric material comparison, 140
Passive acoustic sensor, 424 analytical modeling results, 141
Passive acoustoelectric devices, 417, 418 piezoelectric material properties, 141
Passive devices, 21 simple model, 142
Passive radio-frequency acoustic sensors, 417–418 Piezoelectric MEMS switches, 56, 57
PCB, see Printed circuit board (PCB) DM, 62, 63
PDE, see Partial differential equation (PDE) energy harvester fabrication, 143
PDMS, see Polydimethylsiloxane (PDMS) low-voltage actuation, 57
PECVD, see Plasma-enhanced chemical vapor deposition microswitches, 58
(PECVD) piezoelectric microactuator, 58
Pentan-2-ol organic compound model, 200 PZT films, 58
Performance metrics, 71 SEM image, 58
BW and dynamic range, 72 Piezoelectric MEMS vibration energy harvesters
resolution, 71 ambient energy harvesting, 132–134
scale factor, 71 complete system modeling, 153–156
ZRO and bias stability, 72 Piezoelectric micropumps, 58, 59
Phase-locked loop (PLL), 188, 284 confocal micro PIV system, 62
drive loop, 195 displacement, 59
in gyroscope systems, 194 FPW, 59
off-chip, 84 liquid flow in microchannel, 60
oscillator, 76 mean flow velocity, 59, 61
oscillator-based sensing system, 427, 428 microfluidic systems, 58
Phase noise, 284 photographs and schematic illustration, 60
Phase shift keying (PSK), 405 traveling waves, 61
Photonic crystal optical modulator, 9 Piezoelectric oxide semiconductor field effect transistors
phoXonic crystal filter-modulator, 10 (POSFET), 361
Physical access control layers, 405, 406 Piezoelectric properties
Physics-based 1D Mason model, 210 dielectric and ferroelectric properties, 44, 45
electrical vs. acoustic transmission line, 211 evaluation, 44
impedance at electrical port, 210, 211 modeling piezoelectric unimorph actuators, 45, 46–47
mirror reflection, 212 Piezoelectric PZT thin films, 51
piezoelectric coupling coefficient, 211 on metal substrates, 51
in SMR, 210 Pt-coated microfabricated Ti sheet, 52
terminating acoustic impedance, 211 relationship, 52
three-port Mason model, 210 single-crystal silicone substrate, 51
transmission characteristic calculation, 212 stainless-steel substrates, 52, 53
Piezoelectric tip deflection−hysteresis curves, 53
coupling, 145 tip displacements, 51, 52
effect, 41 transverse piezoelectric coefficient, 53
materials, 41, 360 Piezoelectric sensors, 360
resonant frequency, 231 anthropomorphic fingertip sensor, 361
strain constant, 360 emerging technologies, 361
Piezoelectric actuator, 62, 370, 371 piezoelectric strain constant, 360
array, 62, 63 POSFET, 361
 452 Index

Piezoelectric sensors  (Continued)
PZT and PVDF, 360, 361
sensing applications, 360, 362
well-designed artificial skin, 361
Piezoelectric thin film preparation, 42
crystal structure, 43, 44
PZT thin films deposition for MEMS, 42
sputtering deposition, 42, 43
by sputtering deposition, 44
Piezoelectric transducers
electronic polarization, 228
polycrystal materials, 229
resonant modes in, 228
Piezoresistive sensors, 358, 359, 360
Piezoresistors, 358
PIP capacitors, see Poly–insulator–poly capacitors (PIP
capacitors)
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PSAW, see Pressure surface acoustic wave (PSAW)
PSK, see Phase shift keying (PSK)
Pull-in voltage, 281
Pulsed laser deposition (PLD), 42
PVDF, see Polyvinylidene fluoride (PVDF)
PZT, see Lead zirconium titanate (PZT)
Q
Q, see Effective quality factor (Q)
Q-factor–frequency (Q–f frequency), 289
Q-loading effect, 283
QCM, see Quartz crystal microbalance (QCM)
Q factor, see Quality factor (Q factor)
Q–f frequency, see Q-factor–frequency (Q–f frequency)
Quadrature
correction, 190, 191

PIV, see Particle image velocimetry (PIV) nulling, 76, 77

Planar coil, 367 Quadrature error, see Zero rate output (ZRO)
Planck’s distribution, 385 Quality factor (Q factor), 214–215, 275
Plasma-enhanced chemical vapor deposition acoustic Q value, 215–216
(PECVD), 254 for BAW resonators, 220
Plastic optical fiber sensor (POF sensor), 366 FOM, 216
Platinum temperature sensors, 388 mBVD model, 215
PLD, see Pulsed laser deposition (PLD) phase derivative method, 215
PLL-based drive loop, 194–195 scaling at antiresonance, 222
PM, see Power management (PM) 3-dB bandwidth method, 215
PMMA, see Poly (methyl methacrylate) (PMMA) and transmission, 218–219
PNIPAM, see Poly(N-isopropylacrylamide), (PNIPAM) Quartz crystal microbalance (QCM), 422
POF sensor, see Plastic optical fiber sensor (POF sensor)
Poly (methyl methacrylate) (PMMA), 6 R
Poly(N-isopropylacrylamide), (PNIPAM), 332, 335
Polydimethylsiloxane (PDMS), 357 Radial mode disk resonators, 304
Poly–insulator–poly capacitors (PIP capacitors), 21, 22 disk resonator input–output feed-through, 304–305
Polymers, 351 high stiffness, 302
Polypyrrole (PPy), 363 resonator biasing, 303
Polysilicon, 388 Radial–contour mode resonator, 287
Polyvinylidene fluoride (PVDF), 227, 229, 360 Radiation
Poole−Frenkel effect, 31 detectors, 381
POSFET, see Piezoelectric oxide semiconductor field effects, 22
effect transistors (POSFET) Radiation testing, 29
Power amplifier (PA), 290 annealing studies, 35, 36, 37
Power handling defects in pre-irradiated HfO2-based devices, 29–31
maximum power flowing, 281 radiation-induced changes, 31, 32–35
MEM resonator arraying techniques, 282 Radio frequency identification (RFID), 428
Power management (PM), 404 Radio-controlled SMA microgripper
PPy, see Polypyrrole (PPy) beams, 338–339
Pre-irradiated HfO2-based devices circuit temperature measurement, 340
C−V characteristics, 29–31 CNT forest manipulation, 341
HfO2 high-κ dielectric films, 29 gripper beams split, 340
Prechemical mechanical polishing (CMP), 124 μEDM, 339
Precursor domains, 6–7 RF control method, 338
Pressure sensors, 434 SMA gripper and LC circuit design, 339
Pressure surface acoustic wave (PSAW), 434 wireless tests, 339
Principle of operation, 70 Radiofrequency (RF), 8, 401, 417
capacitive BAW disk gyro, 92 actuation mechanism, 332, 334
Coriolis acceleration, 93 filters, 205
MEM resonators, 274–275 ICs, 273
normal and shear force, 358 inductance of interconnects role, 112
standard chipless SAW tag, 430 MEMS switches for, 56
vibratory gyroscope, 184–187 Rayleigh waves, 420
Printed circuit board (PCB), 308, 408 Read-out circuits, 168
Proof mass, see Resonator continuous-time sensing, 168–174
Prowave models, 236 discrete-time sampling, 174–177
 Index 453

discussions, 177–178 RSAW, see Reference surface acoustic wave (RSAW)

Real-time motion capture technology, 200
Received signal strength information (RSS information),
407
Receiver array
antenna array, 236
continuous component and amplitude mismatch, 240
frequency response, 238, 239
receiver channel mutual coupling index, 239
SNR values in tested room, 240
transducer equivalent circuit component values, 238
transducer impedance measurements, 237
transducer voltage, 237
Reference surface acoustic wave (RSAW), 434
res, see Resonance frequency (res)
Reservoir squeezing, 346
Resistor, inductor, capacitor circuits (RLC circuits), 277
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RSS information, see Received signal strength
information (RSS information)
S
SA receptor, see Slow adaptation receptor (SA receptor)
Sacrificial layer process, 117
SAW sensor, see Surface acoustic wave sensor (SAW
sensor)
SC, see Switched-capacitor (SC)
Scanning electron microscopy (SEM), 43, 77, 267
Scratch drive technique, 6
SCS, see Single-crystal silicon (SCS)
Sea-of-leads (SoL), 116
Seed layer fabrication, 125
Self-organizing networks, 405

Resonance frequency (res), 141 Self-powered systems-on-chip (SoCs), 142

Resonator, 192 Self-powered systems-on-package (SoPs), 142
Resonant mechanical vibration energy harvester, 134; Self-test control block (STCB), 196
see also Piezoelectric MEMS vibration SEM, see Scanning electron microscopy (SEM)
energy harvesters Semiconductor materials, 359
critical coupling, 139–140 Sense channels, 76, 84, 85
influence of damping, 137–139 Sense of touch, 352
optimal resistive load, 137 electrical information, 352
output power, 137 human skin mechanoreceptors, 353
piezoelectric material comparison, 140–142 human skin receptors, 353
unidimensional model, 134–137 operations, 355
Resonate-scanning parameters, 354–355
advantages, 258 tactile sensing, 352, 353
data acquisition system, 259–262 tactile sensor design, 354
device operation and measurement, 259 SENSeOR, 429
IR laser radiation, 265 Sensing, 77
IR radiation interferogram, 263 Sensor separation, 243
IR tunable laser source, 264 Sentilla T mote mini, 407, 408
lamellar grating device frequency response, 263 Shape memory alloy actuators (SMA actuators), 331,
peak-to-peak voltage, 262–263 373, 374
resonance operation FTIR optical testing, 259 for Braille tactile display, 374
Resonator-based systems, 304 NiTi SMA helical spring, 374
Analog Devices AD8362 converter, 430 SMA microgripper, 338
closed-loop control, 430 Shear waves, 217
comparison, 429 excitation, 210
frequency modulation, 430 leakage problem, 217–218
frequency shift keying transmitters, 307–309 quality factor, 219
interrogation range, 428 SHM, see Structure health monitoring (SHM)
MEM resonator array-based oscillators, 305–307 Signal generator, 260
in RADARs, 428 Signal-processing algorithm
SAW resonators, 428, 429 estimation accuracies, 244
SENSeOR, 429 phase adjustment, 242
32-bit frequency control, 429, 430 transmitted signal, 241
RF, see Radiofrequency (RF) Signal-to-(noise + distortion) ratio (SNDR), 84
rf-magnetron sputtering, 42 Signal-to-noise ratio (SNR), 79, 171, 229
RF-MEMS switches, 56 Silicon-on-insulator (SOI), 59, 92, 251
RFID, see Radio frequency identification (RFID) substrate, 62, 382
Rigid body attitude, 314, 316 technology, 73
attitude estimation, 318–320 using thin silicon layer, 383
attitude representation mathematical model, 316–317 Silicon interposer application, 124
magnetic sensor package measurement models, 317–318 Silicon materials, 359
Rigid body kinematic motion equation, 318 Single fiber structure, 357
RLC circuits, see Resistor, inductor, capacitor circuits Single-crystal silicon (SCS), 91
(RLC circuits) Single-crystal silicone substrate, 51
RMS, see Root Mean Square (RMS) Single-mode optical fiber (SMF), 256
Root Mean Square (RMS), 376 Skew-symmetric matrix, 318
Rotation-induced Coriolis acceleration, 84 Slow adaptation receptor (SA receptor), 352
 454
SMA actuators, see Shape memory alloy actuators
(SMA actuators)
SMF, see Single-mode optical fiber (SMF)
SMR, see Solidly mounted resonator (SMR)
SNDR, see Signal-to-(noise + distortion) ratio (SNDR)
SNR, see Signal-to-noise ratio (SNR)
SOC, see System on chip (SOC)
SoCs, see Self-powered systems-on-chip (SoCs)
SOI, see Silicon-on-insulator (SOI)
SoL, see Sea-of-leads (SoL)
Solder confinement, 119; see also Mechanically flexible
interconnect (MFI)
curved polymer surface fabrication, 119
electroplating process, 120
fabrication of, 119, 120
MFI compliance, 122
at MFIs, 120
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process flow for MFI fabrication, 121
after reflow process, 120
test setup for measuring MFI compliance, 121
Solidly mounted resonator (SMR), 207, 422; see also
modified Butterworth Van Dyke model
(mBVD model)
physics-based 1D Mason model, 210, 212
robustness, 208
SoPs, see Self-powered systems-on-package (SoPs)
Sound pressure level (SPL), 229
Spatial resolution, 352
Spectrometer calibration, 268–269
SPL, see Sound pressure level (SPL)
Sputtering deposition, 42–43
Stationary MEMS lamellar grating FT spectrometers,
266
fabrication process and assembly process, 267, 268
FT spectroscopy Michelson interferometer, 265
high-precision scanning mechanisms, 265
OPD, 266
spectrometer calibration and testing, 267–269
STCB, see Self-test control block (STCB)
Stefan–Boltzmann constant, 385
Stefan–Boltzmann law, 385
Stemless wineglass resonator, 288
Stimuli-responsive hydrogels, 331
STM, see Surface tunneling microscope (STM)
Strain gauges sensors, 358
diaphragm edges, 359
polyimide-based tactile sensing array, 359
resistive sensors, 358
single cantilever structure, 359
triaxial tactile sensor, 360
Strap-down system, 402
Structure health monitoring (SHM), 404
Surface acoustic wave sensor (SAW sensor), 8, 9,
361, 419
base-band unit, 431, 432
filters, 290
FMCW radar-like electronics, 431
frequency filters, 420
lithium niobate and lithium tantalite, 421
piezoelectric materials, 420
on piezoelectric substrates, 419
principle on IDTs, 420
principles, 430
properties and characteristics, 421
Index
reflected pulses, 430, 431
RF excitation burst, 430
RFID tags, 431
time-domain response, 431
for wired sensor developments, 418
for wireless sensing applications, 418
Surface micromachined gyroscopes, 73
Surface tunneling microscope (STM), 15
Switched-capacitor (SC), 174, 175
Synchronous detection approaches, 425
System on chip (SOC), 15, 274
T
Tactile actuators, 369–370
EAP actuators, 371–372, 373
magnetic actuators, 374–375, 376, 377
piezoelectric actuators, 370, 371
reviewed technology performances, 377
shape memory alloy actuators, 373, 374
Tactile sensing system, guidelines for, 354
Tactile sensors, 355
capacitive sensors, 355, 356, 357, 358
conductive polymer sensors, 362, 363, 364, 365
magneto-inductive sensors, 367, 368, 369
optical sensors, 365, 366, 367
piezoelectric sensors, 360, 361–362
piezoresistive sensors, 358–359, 360
reviewed technology performances, 377
strain gauge sensors, 358–359, 360
Taiwan Semiconductor Manufacturing Company
(TSMC), 112
Tangent of loss angle (tan δ), 135
tan δ, see Tangent of loss angle (tan δ)
Tapered interconnect structure, 118
TBB, see 1, 3, 5-tri(4′-bromophenyl) molecules benzene
(TBB)
TCA, see Transcapacitance amplifier (TCA)
TCC, see Temperature coefficient of capacitance (TCC)
TCF, see Temperature coefficient of frequency (TCF)
TDoA, see Time difference of arrival (TDoA)
TDR, see Time–depth recorder (TDR)
TE, see Thickness extension (TE)
TED, see Thermoelastic damping (TED)
Temperature coefficient of capacitance (TCC), 24
Temperature coefficient of frequency (TCF), 208, 420
Temperature sensors, 434
design, 388–389
material considerations, 388
Temperature-dependent leakage current, 24
Thermal
emitter hot plate, 392
emitters, 382
grown layers, 23–24
noise, 171–172
radiation, 385, 386, 390
Thermal energy transfer
convection, 384–385
in micro hot plates, 383
quadripole network, 386
thermal conduction, 384
transient characteristics, 386
Thermal microactuators
planner wireless resonant heaters fabrication, 334
 Index 455

RF actuation mechanism, 334 capacitance change, 173

steady-state temperature, 334 feedback resistors of, 173
wireless microactuators, 333 input node, 174
wireless-controlled hydrogel microvalves, 333 output signal of, 173
Thermoelastic damping (TED), 99 SNR at output, 174
energy loss in MEM resonators, 282–283 transistor size equations, 174
QTED simulation, 100 Transimpedance front ends, 80, 81; see also Microgyro
thermoelastic equations, 99–100 front ends
vibration-induced temperature distribution, 100 Transistor, 22
Thickness extension (TE), 206 C-MOS, 3
Thin-layer piezoelectric materials, 142–143 transconductance, 172
Three-axis inertial, see Magnetic sensor package Transresistance amplifier (TRA), 172
measurement models Transverse piezoelectric properties
three-axis accelerometer, 317 bipolar sine-wave voltage, 49, 51
three-axis gyroscope, 317–318 extrinsic effects, 51
three-axis magnetometer, 317 input sine-wave signal, 48
Three dimensional position estimation (3D position measurement setup, 48
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estimation), 324 piezoelectric vibration, 48

dead reckoning technique, 324–326 PZT films on MgO or Si substrates, 47, 48
human pedestrian locomotion, 326–329 tip deflection−hysteresis curves, 50
Three-dimensional optical tactile sensor, 367 tip displacement, 48, 49, 50
3D motion capture, 200 unimorph cantilevers, 48
3D position estimation, see Three dimensional position 1,3,5-tri(4′-bromophenyl) molecules benzene (TBB), 17
estimation (3D position estimation) 2,4,6-tri(2′-thienyl)-1,5-triazine, 3, 16
3D walking trajectory, 326 TSMC, see Taiwan Semiconductor Manufacturing
Ab initio simulation, 17 Company (TSMC)
experimental results of, 16 TSV technology, see through-silicon via technology
in inertial frame of reference, 185 (TSV technology)
on noninertial frame of reference, 187 Tuning electrodes, 77
result with correction step, 329 Two-axis gyrometer, 4, 5
result without correction step, 328 2D resonator, 187
on rotating turntable, 185
Three-resonator filter structure, 294, 295 U
Through-silicon via technology (TSV technology), 112, 121
change after with and without gold coating, 123 UCA, see Uniform circular array (UCA)
cladding fabrication process, 124 Ultra-miniaturization, 4
CMP elimination for Post-MEMS, 126 Ultra-wide-band techniques (UWB techniques), 421,
CMP process, 126 432
fabrication challenges in thick chip, 122 ISM frequency band, 432
mesh process, 126 principal aspects, 432
mesh seed-layer fabrication process, 127 pulse compression, 433
process flow for filling via holes, 126 in sensors and communication systems, 432
process flow in thick wafers, 125 transfer function, 433
reducing effect of stresses, 124 ultra-wide frequency band, 432
seed layer fabrication, 125 UWB SAW tag principle, 432
silicon interposer application, 124 Ultrasonic technology, 227
stress-aware placement, 122, 124 Ultrasonic transducer technology
SU-8 microscopic image cladded top view, 124, 125 CMUT transducers, 230
time-consuming processes, 125 EMFi transducers, 230
Thru-open-short-and-load (TOSL), 220 experimental results, 243–244
TIA, see Transimpedance amplifier (TIA) piezoelectric transducers, 228–229
Time difference of arrival (TDoA), 243 PVDF transducers, 229
Time-saving modeling techniques, 209 Ultraviolet light (UV light), 336
Time–depth recorder (TDR), 314 Unidimensional model, 134
Tiny OS, 409 differential equation, 135
Tire pressure monitoring system (TPMS), 420 macroscopic and microscopic value conversion, 136
TNEΩ, see Total noise equivalent rotation (TNEΩ) piezoelectric element, 134–135
TOSL, see Thru-open-short-and-load (TOSL) Uniform circular array (UCA), 228
Total noise equivalent rotation (TNEΩ), 71 Unimorph cantilevers, 48
TPMS, see Tire pressure monitoring system (TPMS) dimension, 48
TRA, see Transresistance amplifier (TRA) tip deflection−hysteresis curves, 50
Transcapacitance amplifier (TCA), 173 tip displacement, 49, 50
Transient analysis, 384 transverse piezoelectric coefficient, 51
Transimpedance amplifier (TIA), 97, 170, 172, 305 Universal Serial Bus port (USB port), 322
 456
UV light, see Ultraviolet light (UV light)
UWB techniques, see Ultra-wide-band techniques
(UWB techniques)
V Wireless sensor network-inertial sensor node
Valuable asset monitoring (VAM), 401
VCO, see Voltage controlled oscillator (VCO)
Very high speed integrated circuit (VHSIC), 134
VHSIC hardware description language analog and
mixed signal (VHDL-AMS), 134
Vibratory gyroscope
construction of, 184
Coriolis force, 186, 187
gain-phase response, 185
operation of, 184
primary dynamics, 187
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primary resonator response, 186
signal and error spectrum from, 189
2D resonator, 185, 187
X-axis resonator, 185
Y-directional vibration, 186
Vibro-tactile actuator (VITAL actuator), 375
Vibrotactile electromagnetic actuator, 375
Voltage controlled oscillator (VCO), 284
W physical access control layers, 405, 406
WAN, see Wide area network (WAN)
Wearable-tactile-sensor glove, 357
Wide area network (WAN), 407
Wideband transducers
CMUT sensor array, 234–236
piezoelectric bandwidth modification, 231–234
Wired approach, 425
delay-line-based approaches, 425, 426–427
oscillator approaches, 427, 428
Wireless approach, 428
activation, 343
market, 205
microactuators, 331, 333
Index
resonator-based systems, 428, 429, 430
SAW interrogation principles, 430, 431, 432
SAW tag devices, 430, 431, 432
UWB techniques, 432, 433
(WSN ISN), 407
acceleration changes, 414
antenna, 408, 409
BMA applications, 409
hardware design, 407, 408
IFA on four-layer FR-4 substrate, 409
ISN nodes, 414
measured accelerations, 413
object-tracking applications, 412
range-based schemes, 413
Sentilla T mote mini, 407, 408
software components, 409–410, 411, 412
VAM, 412
WSN gateway model, 408
Wireless sensor network (WSN), 401, 404
gateway model, 408
gateway’s primary function, 406–407
hardware architecture, 405
MAC layers, 405, 406
network layers, 406
nodes, 405
RF bands and transmission speeds, 406
RF transceiver, 404–405
self-organizing networks, 405
WSN, see Wireless sensor network (WSN)
WSN ISN, see Wireless sensor network-inertial sensor
node (WSN ISN)
Z
Zero rate output (ZRO), 72, 76, 178–179, 189
Zero-biased capacitance density, 29
ZigBee network layer, 406
Zinc oxide (ZnO), 208, 422
Zygo optical profilometer, 255