Semiconductor Electronics: Materials, Devices and Simple Circuits

Q.1 What happens to the width of depletion layer of a p–n junction when it is (i)
forward biased, (ii) reverse biased?

Q.2 Name the type of biasing of a p-n junction diode so that the junction offers
very high resistance

Q.3 Why is the conductivity of n-type semi-conductor greater than that of the p-
type semi-conductor even when both of these have same level of doping?

Q.4 Name two factors on which electrical conductivity of a pure semiconductor at

a given temperature depends.

Q.5 Draw energy band diagram for an intrinsic semiconductor at T > 0 K.

Q.6 What do you understand by a dynamic resistance of p-n junction diode

Q.7 Distinguish between an intrinsic semiconductor and p-type semiconductor.

Give reason, why a p-type semiconductor crystal is electrically neutral,
although nh >> ne?

Q.8 Draw energy band diagrams of an n-type and a p-type semiconductor at

temperature T > 0 K. Mark the donor and acceptor energy levels with their
energies.
Q.9 C, Si and Ge have same lattice structure. Why is C insulator, while Si and Ge
are intrinsic semiconductors?

Q.10 What is doping? Why is it needed?

Q.11 Draw a block diagram of a full-wave rectifier with capacitor filter. Draw
input and output (filtered) voltage of rectifier.
NUMERICALS
Q.12 Suppose a pure Si crystal has 5×1028 atoms m−3. it is doped by 1 ppm
concentration of pentavalent As. Calculate the number of electrons and holes. Given
that ni=1.5×1016m−3.
Q.13 A semiconductor has equal electron and hole concentration of 6×108/m3. On
doping with certain impurity, electron concentration increases to 9×1012/m3.
(i) Identify the new semiconductor obtained after doping
(ii) Calculate the new hole concentration.
(iii)How does the energy gap vary with doping?