IKD10N60RF

TRENCHSTOPTMRC-DrivesFastSeries

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

Features: C

TRENCHSTOPTMReverseConducting(RC)technologyfor600V
applicationsoffering

•OptimizedEon,EoffandQrrforlowswitchinglosses
•Operatingrangeof4to30kHz G
•SmoothswitchingperformanceleadingtolowEMIlevels E
•Verytightparameterdistribution
•Maximumjunctiontemperature175°C
•Shortcircuitcapabilityof5µs C
•Bestinclasscurrentversuspackagesizeperformance
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant(soldertemperature
260°C,MSL1)

CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications: G
E
Domesticandindustrialdrives:

•Compressors
•Pumps
•Fans

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKD10N60RF 600V 10A 2.2V 175°C K10R60F PG-TO252-3

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.5

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IKD10N60RF

TRENCHSTOPTMRC-DrivesFastSeries

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 2 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°C IC 20.0 A
Tc=100°C 10.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 30.0 A
Turn off safe operating area
- 30.0 A
VCE≤600V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
Tc=25°C IF 20.0 A
Tc=100°C 10.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 30.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000 tSC µs
Time between short circuits: ≥ 1.0s
Tvj=150°C 5
PowerdissipationTc=25°C Ptot 150.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
reflow soldering (MSL1 according to JEDEC J-STA-020) 260

ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,1)
Rth(j-c) - - 1.00 K/W
junction - case
Diode thermal resistance,2)
Rth(j-c) - - 2.60 K/W
junction - case
Thermal resistance, min. footprint
Rth(j-a) - - 75 K/W
junction - ambient
Thermal resistance, 6cm² Cu on
PCB Rth(j-a) - - 50 K/W
junction - ambient

1)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
Datasheet 3 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V
VGE=15.0V,IC=10.0A
Collector-emitter saturation voltage VCEsat Tvj=25°C - 2.20 2.50 V
Tvj=175°C - 2.30 -
VGE=0V,IF=10.0A
Diode forward voltage VF Tvj=25°C - 2.10 2.40 V
Tvj=175°C - 2.00 -
Gate-emitter threshold voltage VGE(th) IC=0.17mA,VCE=VGE 4.3 5.0 5.7 V
VCE=600V,VGE=0V
Zero gate voltage collector current1) ICES Tvj=25°C - - 40 µA
Tvj=175°C - - 1000
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=10.0A - 4.6 - S
Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 655 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 37 - pF
Reverse transfer capacitance Cres - 22 -
VCC=480V,IC=10.0A,
Gate charge QG - 64.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 7.0 - nH
case
Short circuit collector current VGE=15.0V,VCC≤400V,
Max. 1000 short circuits IC(SC) tSC≤5µs - - A
74
Time between short circuits: ≥ 1.0s Tvj=25°C

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 12 - ns
Rise time tr VCC=400V,IC=10.0A, - 15 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=26.0Ω,RG(off)=26.0Ω, - 168 - ns
Fall time tf Lσ=50nH,Cσ=30pF - 18 - ns
Lσ,CσfromFig.E
Turn-on energy Eon - 0.19 - mJ
Turn-off energy Eoff - 0.16 - mJ
Total switching energy Ets - 0.35 - mJ

1)
Not subject to production test - verified by design/characterization
Datasheet 4 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr Tvj=25°C, - 72 - ns
Diode reverse recovery charge Qrr VR=400V, - 0.27 - µC
IF=10.0A,
Diode peak reverse recovery current Irrm diF/dt=750A/µs - 9.1 - A
Diode peak rate of fall of reverse
dirr/dt - -146 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 12 - ns
Rise time tr VCC=400V,IC=10.0A, - 15 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=26.0Ω,RG(off)=26.0Ω, - 178 - ns
Fall time tf Lσ=50nH,Cσ=30pF - 20 - ns
Lσ,CσfromFig.E
Turn-on energy Eon - 0.31 - mJ
Turn-off energy Eoff - 0.21 - mJ
Total switching energy Ets - 0.52 - mJ

DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr Tvj=175°C, - 112 - ns
Diode reverse recovery charge Qrr VR=400V, - 0.62 - µC
IF=10.0A,
Diode peak reverse recovery current Irrm diF/dt=720A/µs - 12.9 - A
Diode peak rate of fall of reverse
dirr/dt - -136 - A/µs
recoverycurrentduringtb

Datasheet 5 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

10

8
10
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
7

not for linear use

6

4
1

0 0.1
0.1 1 10 100 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tvj≤175°C;VGE=15V)
(Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V,
VGE=15/0V,rG=26Ω,PCBmountingwith
thermal vias and heatsink, see Appnote:
www.infineon.com/igbt)
160

20
140
18

120
16
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

100 14

12
80
10

60 8

6
40

4
20
2

0 0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tvj≤175°C) (VGE≥15V,Tvj≤175°C)

Datasheet 6 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

30 30

VGE = 20V VGE = 20V

17V 17V
25 25
15V 15V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
13V 13V
20 11V 20 11V

9V 9V

15 7V 15 7V

10 10

5 5

0 0
0 1 2 3 4 0 1 2 3 4
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tvj=25°C) (Tvj=175°C)

30 4.0
Tj = 25°C IC = 1A
Tj = 175°C IC = 5A
3.5 IC = 10A
VCEsat,COLLECTOR-EMITTERSATURATION[V]

IC = 20A
25

3.0
IC,COLLECTORCURRENT[A]

20
2.5

15 2.0

1.5
10

1.0

5
0.5

0 0.0
4 6 8 10 12 14 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=10V) afunctionofjunctiontemperature
(VGE=15V)

Datasheet 7 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

1000
td(off)
tf
td(on)
tr

100 td(off)
tf
td(on)
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
tr 100

10
10

1 1
5.0 7.5 10.0 12.5 15.0 17.5 20.0 0 10 20 30 40 50 60 70 80 90 100 110
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistor
(inductiveload,Tvj=175°C,VCE=400V, (inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,rG=26Ω,Dynamictestcircuitin VGE=15/0V,IC=10A,Dynamictestcircuitin
Figure E) Figure E)

7
td(off) typ.
tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

td(on) max.
tr
6
t,SWITCHINGTIMES[ns]

5
100

10 1
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V, (IC=0,17mA)
IC=10A,rG=26Ω,Dynamictestcircuitin
Figure E)
Datasheet 8 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

1.2 1.0
Eoff Eoff
Eon Eon
Ets Ets
1.0
0.8
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
0.8

0.6

0.6

0.4

0.4

0.2
0.2

0.0 0.0
5.0 7.5 10.0 12.5 15.0 17.5 20.0 10 20 30 40 50 60 70 80
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistor
(inductiveload,Tvj=175°C,VCE=400V, (inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,rG=26Ω,Dynamictestcircuitin VGE=15/0V,IC=10A,Dynamictestcircuitin
Figure E) Figure E)

0.6 0.8
Eoff Eoff
Eon Eon
Ets 0.7 Ets
0.5
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

0.6

0.4
0.5

0.3 0.4

0.3
0.2

0.2

0.1
0.1

0.0 0.0
25 50 75 100 125 150 175 300 325 350 375 400 425 450
Tvj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(inductiveload,VCE=400V,VGE=15/0V, (inductiveload,Tvj=175°C,VGE=15/0V,
IC=10A,rG=26Ω,Dynamictestcircuitin IC=10A,rG=26Ω,Dynamictestcircuitin
Figure E) Figure E)
Datasheet 9 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

16 1000
VCC=120V
VCC=480V
14

Cies
VGE,GATE-EMITTERVOLTAGE[V]

12 Coes
Cres

C,CAPACITANCE[pF]
10

8 100

0 10
0 10 20 30 40 50 60 70 0 5 10 15 20 25 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=10A) collector-emittervoltage
(VGE=0V,f=1MHz)

160 12
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]

140
tSC,SHORTCIRCUITWITHSTANDTIME[µs]

10

120

8
100

80 6

60
4

40

2
20

0 0
12 14 16 18 20 10 11 12 13 14 15 16 17 18 19
VGE,GATE-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa Figure 20. Shortcircuitwithstandtimeasafunctionof
functionofgate-emittervoltage gate-emittervoltage
(VCE≤400V,startatTvj=25°C) (VCE≤400V,startatTvj=150°C)

Datasheet 10 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

1
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]

Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1

D = 0.5 D = 0.5
0.2 0.2
0.1 0.1
0.05 0.05
0.02 0.02
0.1
0.01 0.01
single pulse single pulse
0.1

i: 1 2 3 4 i: 1 2 3 4
ri[K/W]: 0.0972 0.4393 0.3919 0.0443 ri[K/W]: 0.3192 1.604 0.6161 0.0732
τi[s]: 1.1E-4 4.5E-4 2.0E-3 0.03487 τi[s]: 6.4E-5 2.6E-4 1.6E-3 0.021807

0.01 0.01
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedanceasa Figure 22. Diodetransientthermalimpedanceasa
functionofpulsewidth1)(seepage4) functionofpulsewidth2)(seepage4)
(D=tp/T) (D=tp/T)

150 0.8
Tj = 25°C, IF = 10A Tj = 25°C, IF = 10A
Tj = 175°C, IF = 10A Tj = 175°C, IF = 10A
0.7
125
Qrr,REVERSERECOVERYCHARGE[µC]
trr,REVERSERECOVERYTIME[ns]

0.6

100
0.5

75 0.4

0.3
50

0.2

25
0.1

0 0.0
700 900 1100 1300 1500 1700 1900 700 900 1100 1300 1500 1700 1900
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverytimeasafunction Figure 24. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)

Datasheet 11 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

30 0
Tj = 25°C, IF = 10A Tj = 25°C, IF = 10A
Tj = 175°C, IF = 10A Tj = 175°C, IF = 10A

25 -200
Irr,REVERSERECOVERYCURRENT[A]

dIrr/dt,diodepeakrateoffallofIrr[A/µs]
20 -400

15 -600

10 -800

5 -1000

0 -1200
700 900 1100 1300 1500 1700 1900 700 900 1100 1300 1500 1700 1900
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 25. Typicalreverserecoverycurrentasa Figure 26. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=400V) currentslope
(VR=400V)

30 3.0

25
2.5 IF = 1A
IF = 5A
IF = 10A
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

IF = 20A
20

2.0
Tj = 175°C, VGE = 0V
Tj = 25°C, VGE = 0V
15

1.5

10

1.0
5

0 0.5
0 1 2 3 4 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[°C]
Figure 27. Typicaldiodeforwardcurrentasafunction Figure 28. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

Datasheet 12 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

Package Drawing PG-TO252-3

DOCUMENT NO.
MILLIMETERS Z8B00003328
DIM
MIN MAX
A 2.16 2.41 SCALE 0
A1 0.00 0.15
b 0.64 0.89 2.5
b2 0.65 1.15
b3 4,95 5.50 0 2.5
c 0.46 0.61 5mm
c2 0.40 0.98
D 5.97 6.22
EUROPEAN PROJECTION
D1 5.02 5.84
E 6.35 6.73
E1 4.32 5.21
e 2.29 (BSC)
e1 4.57 (BSC)
N 3 ISSUE DATE
H 9.40 10.48 05-02-2016
L 1.18 1.78
L3 0.89 1.27 REVISION
L4 0.51 1.02 06

Datasheet 13 V2.5
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TRENCHSTOPTMRC-DrivesFastSeries

Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

Datasheet 14 V2.5
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RevisionHistory
IKD10N60RF

Revision:2017-09-26,Rev.2.5
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2012-02-24 Final data sheet
2.2 2013-12-10 New value ICES max limit at 175°C
2.3 2014-02-26 Without PB free logo
2.4 2014-03-12 Storage temp -55...+150°C
2.5 2017-09-26 Update Fig. 13 E(Ic)

Datasheet 15 V2.5
2017-09-26
Trademarks

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Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2018.
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