Power Transistors

2SC1847
Silicon NPN epitaxial planar type

For medium output power amplification Unit: mm

8.0+0.5
–0.1 3.2±0.2
Complementary to 2SA0886
φ 3.16±0.1

11.0±0.5
3.8±0.3
■ Features

3.05±0.1
• Output of 4 W can be obtained by a complementary pair with
2SA0886

1.9±0.1
• TO-126B package which requires no insulation plate for installa-

16.0±1.0
tion to the heat sink

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit 0.75±0.1
0.5±0.1
Collector-base voltage (Emitter open) VCBO 50 V 0.5±0.1 1.76±0.1
4.6±0.2
2.3±0.2
Collector-emitter voltage (Base open) VCEO 40 V
1: Emitter
Emitter-base voltage (Collector open) VEBO 5 V 1 2 3 2: Collector
3: Base
Collector current IC 1.5 A
TO-126B-A1 Package
Peak collector current ICP 3 A
Collector power dissipation PC 1.2 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 40 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 10 µA
Forward current transfer ratio * hFE VCE = 5 V, IC = 1 A 80 220 
Collector-emitter saturation voltage VCE(sat) IC = 2 A, IB = 0.2 A 1 V
Base-emitter saturation voltage VBE(sat) IC = 2 A, IB = 0.2 A 1.5 V
Transition frequency fT VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz
Collector output capacitance Cob VCB = 20 V, IE = 0, f = 1 MHz 35 pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R
hFE 80 to 160 120 to 220

Publication date: February 2003 SJD00095BED 1

 2SC1847

PC  Ta IC  VCE VCE(sat)  IC
1.6 4.0

Collector-emitter saturation voltage VCE(sat) (V)

TC=25˚C IC/IB=10
1
3.5
Collector power dissipation PC (W)

IB=40mA
TC=100˚C
1.2 3.0 35mA

Collector current IC (A)

25˚C
30mA
2.5 25mA 0.1 –25˚C

2.0 20mA
0.8
15mA
1.5
10mA
0.01
0.4 1.0
5mA
0.5

0 0 0.001
0 40 80 120 160 0 2 4 6 8 10 0.01 0.1 1

Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (A)

VBE(sat)  IC hFE  IC fT  I E
240
IC/IB=10 VCE=5V VCB=5V
Base-emitter saturation voltage VBE(sat) (V)

10 1000 f=200MHz
TC=25˚C
200
Forward current transfer ratio hFE

Transition frequency fT (MHz)

TC=100˚C
25˚C
–25˚C 160
1 TC=–25˚C 100

100˚C 120
25˚C

80
0.1 10

40

0.01 1 0
0.01 0.1 1 0.01 0.1 1 −0.01 −0.1 −1 −10
Collector current IC (A) Collector current IC (A) Emitter current IE (A)

Cob  VCB VCER  RBE ICBO  Ta

120 60 1000
C (pF)

IE=0 TC=25˚C VCB=20V

f=1MHz
(V)

TC=25˚C
(Common base, input open circuited) ob

100 50
(Resistor between B and E) VCER

80 40 100
ICBO (Ta = 25°C)
Collector-emitter voltage

ICBO (Ta)
Collector output capacitance

60 30

40 20 10

20 10

0 0 1
1 10 100 0.001 0.01 0.1 1 10 0 20 40 60 80 100
Collector-base voltage VCB (V) Base-emitter resistance RBE (kΩ) Ambient temperature Ta (°C)

2 SJD00095BED
 2SC1847

Safe operation area Rth  t

10
Single pulse (1)Without heat sink
TC=25˚C 104
ICP (2)With a 100×100×2mm Al heat sink

Thermal resistance Rth (°C/W)

t=10ms
1 IC 103
Collector current IC (A)

t=1s

(1)
102
0.1
(2)

10

0.01
1

0.001 10−1
0.1 1 10 100 10−4 10−3 10−2 10−1 1 10 102 103 104
Collector-emitter voltage VCE (V) Time t (s)

SJD00095BED 3
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2002 JUL