-

EBAY.OKAA.SS.tit.EE
€7

⑧
'

Electrostatics
a
.
Coulomb 's Law
of Electric force .

91 92 f e
q , 92
• •

q f x r

E
is constant
9293 Katinka
where k a
: F a or f
of proportionality called
=
.

electrostatic force constant

I Where Eo is called
K =
= 9×109 Nm 2C -
2

Fa Eo permittivity of free space .

8 8551 X 10 N
12 2 i
Go
2
C
- -
-
=
m
-

2 Coulomb 's Law in Vector form

→ →
r
F, z ←• →
•
f
21
-19 , tqz
Friz ← Fun
Coulomb 's Law
In Vector
form ,
can be written as

where
in Hae
is a unit
Thz #
-
-

↳ 9,9; in
vector in the direction from
q to 92
.

Similarly ,
FT .
=

# 9.gg
↳
Fez , where Ku -

Iq is a unit

vector in the direction from

92 to 9 a '
 3
Superposition Principle
Between three charges
FT £13
Fiat Frs Tag 929,4 his # 9th}
- =
+
co
,

similarly for multiple charges

F. Fez Fist trim
II.
+

[ 919; in 9h43 in +
+9291%1
- -

t
- -

3
- -

⇐
- - -

FT = 9, 9i
I , i
ATL Co
i
-

-
2
Ty,

A Electric field
-

Fen h
=

goingoff Econ after B

-
= -

. ,
.
a

is due to a
point charge
I I q
P
=

O P
'

→ -
ate co r
• • > F
q 9 .

→
ciil Due to
system of point charge
Eca) =
Each ) t Eal r ) t -
- - - t En Cr )

ETH
Taco 9nspimp Ico gym in
Ita co Ar? pin
=
+ t t
- -
- - -

P
a
,

?q
Eth
II anypair
=

.
.
5 Electric field due to a
Dipole →

Is At ani al E = 9 4 an hp
al )
2
ATL to (q2 -

for
'

as> a

E.
a

= 4qa
P
4 Tito is
( i :) At equi tonal
Eeg
n

gtfo P
= -

+ as )3k

)
At
large distance ( r >> a
a
,

Es = - 299
"

P
Fonz

6 Dipole in uniform Electric field

distance
TORQUE ,
I = Force X
perpendicular
Sino
=
QE 2A

E Sino
=
p
= F XLI

continuous
a
charge density y =
doe
(a) Linear
charge density oh
-

(b) Surface charge density doe

r =
.

DA

(c) Volume charge density D= doe

-

ok

8 Electric then

HE = F- D8 = Eo IS cos -0
.

9 Gauss Theorem

OE
Of F. D8 9-
= =

Eo
 Applications :.

in field due infinitely long straight E-

#⇐ a
to an =

cii , field due to uniformly charged Plane sheet E

geo
=

so Electrostatic Potential V -

VB Va- =
WAI
Go

potential point charge

in Electrostatic due to a

¥
u
tae %
=
=

.
.

IN Potential Due to an Electric

Dipole
Vp = I
[
29 a lose
2
cos 20 )
4Th to q2 -
a

At anial
point • At
equatorial point
" axial >

glee 9g ,
Vega =
0

His Potential due to

system of charges
"÷
-

v
a :c ok take Kini Iac oh:
- -
- -
-
-

. , .
.

Electrostatic Potential
sa
.

Energy
(1) In No External Electric field
due to two
system of charges
•

& lat , = O
9.
•

91
-
-
-

q
-
-
-
.
.

,
.

W,
•
f Wz 9.92
•
.

= + = I
Pd Miz P2 ATL Eo tha
 Due to
system of
three
charges [ 93
•

p,
IN , that lab
-

U =

Ms Ms
"
!e -1919; t
9gq;
t
9,9; )
=

a .

9, 92
42
(2) In An External Electric field

• Potential
Energy of a
single charge
P E in external field external
of a
charge an
charge = X
. .

electric potential
11 = LI
q
-

q Vcrs
-

U =

Potential
•

Energy of two
point charges
Potential
Energy of =
g. Yr , .
+
game ,
t 9192
System 49 torn

• Potential
Energy of a
dipole in uniform Electric
field
U : PE ( Cos 0. -
Los Oz)

a. a Relation between field and Potential

E = -
old → Potential
der
gradient
And
13
Capacitor capacitance
④ xx

Q - CV
 1a Types capacitors of
Parallel plate
*
capacitor
C E Eo A
d

for other medium

cm = Ecco

H spherical capacitor
( = 4Th Eo Mi 92

-ed
9, -
R2

(3) Cylindrical Capacitor

C = 24 to l
Ln ( bla)

15 When a dielectric stab is inserted Between plate of

copo.acitoy.co
C=d!EE§①
-
o
.

Ep
when d - t
T
.

' t .
Dielectric C =
kEoA_
stab d
•
d a

C = K Co
Er =
Eo -

Ep
Er
Eq
-

slab is inserted between

16 When a
Conducting to Q
plate of
Capacitors Eo -

t s
g
c
¥: ÷ ¥
-

#
-

.
Er -

- O
,
r E r

r d a
 Combination of
*
capacitor
4) Series as Parallel

In ! It ¥1 Igt
Cnet C, f- Cztczt Cn
¥
-
- - -
e-
- -
-

18
Energy stored inline
capacitor
U=1z# OR U =

Izod

19
Energy density
EEZ
U
Ig
=

so common Potential

+ Qi
-
Q, + Q2 -

Oz
Cp CZ
y = C, V ,
tCzV2
< > < ?
up yz
C, t Cz

current
Electricity
a. Current
@ current
Iavg Average
= →

Iinsts dQ_ → Instantaneous Current

dt

2 OHM 'S LAH

Y V XI

I V = IR
 conductor
Resistance is
defined as
opposition offered by
to flow of charge .

Rae and Rx
ta
9 e-
resistivity
is the
' '

R where 5 the
: .
=
of
A material depends on
temp .

V = is e
A-
J
Ia
=

3 Current
Density
Also ,

I Is of Material
>

resistivity
-

Is = rt

>
conductivity r =
Is
• Vector form of current
density
-

J
Ian Ito
-

-
-

so

I = JA Cos 8

I = F. AT
Vd -

een e
-

A Drift velocity
Relation between drift velocity and Current I - ne A Vd
5

Relation
6 between current
density and Electric field F -

-
rt

⑦ Mobility u = et
m

Electrical And Power

8
Energy P=I2R -
-

YI
Relation between Egil voltage
9 a -
,

f ↳ EMF

Internal I = E
resistance Rt r
 V =
E -
IN

"
r=e÷ -

en ; 'd =

10 Cells in Series And Parallel

Es = Et Est Est Ey - Series Combination

oh , t
ng Mz t
Mz t
try
Parallel
=

combination
and •
Eta Eat Ez
=

,
+ =

÷ ,
+
÷

11 Wheatstone
Bridge
PW and
µ
In balanced condition

f- F
le
=

Rm Ws

la Meter
Bridge
R = s .
l .

100 -
l,

↓ petoted
13 Potentiometer
Vs RI
v
SEA I
=
.

11 4 I ↳peted
 Applications
4) To
compare emf of two given cells .

Ez ,
=

led ,
->
ated
(2)
Calculating internal resistance of a cell r -

(ft 1) R -

Moving charges And

Magnetism X
r
y
a
• x

nie
x

Magnetic
x
H Force x
→

FB x X
FB
F→B=qv→xB→
C
x x
q
x x x
Sino x
FB =
QUB
× × × ×
case I :
If u is
perpendicular to B.

qVBsi.no = MI
r
Radius T T
mqIB dkgEB.im qglpglm
2

↳
→ r = =
= =

=
LTI
v

T = 21T MY

QBV
Time → T = 2km
period QB
vine inclined to
case 2 : B at an
angle 0 .

lesion at
For
calculating perpendicularonly
take
radius we
to
souse
component of velocity
r= masino
QB
T = 2am

QB
 P v Wso T

# y) !)
= "
!
.

'
'

P = 2 a mucosa
B
q

q CE tu XB )
F-
H Lorentz force =

③
Velocity Selector refer a

TIE = f-B >

•
f
B
qE qu
= v

- → f
U =
I B

B-

Deleted
(a)
Cyclotron frequency -

2am
9. B ->
"

p is the
Naam KE of a
charged particle in a
q2 Ba R2 Radius of
cyclotron
.

..

2M the dels .

⇐I Force on a
straight current
carrying conductor in a

uniform magnetic field .

I = I ( T xB→ )

⑥
Magnetic →
moment
→
of a current
carrying loop
M = I A

current
⑦
Torque on a
carrying loop placed in a

uniform
magnetic field .

I = NT xB→

(8) Biot -
savant Law

dB→ = Moi I Cdt x ri )

ATL q3
 Application :
.

%
Magnetic field at point a on the anis at distance se
from the centre of a current
carrying
loop .

B→ = No I R2
t n 2)
312
(R
'
2

Ii,
Magnetic field at the centre
of current
carrying
circular
loop .

B→ =
bro I
2R

Iii,
field
Magnetic circular
the on
are
centre of current carrying
B→ = no 2M
Aa as
( moment
dipole
behaves
)
as
magnetic

civ )
Magnetic field
circular arc
on the centre of current
carrying
B→ =
No I
⑦
4Th h

(9)
Ampere 's circuital Law

§ 137 IT =
do I

%
Magnetic
wire
field due to a
long then current carrying
B =
Moi
La r

Ii )
Magnetic field insidedistance
conductor at
long straight current
from
carrying
ants
a

cylinder a r the

B→ = Mo i n
LTI R2
 Iiis
Magnetic field outside a
conductor
current
long atstraightdistance
ants
carrying a
from the
r

PT = Mo LI
AHN

Iv) Inside solenoid

a
long ④
Magnetic field
toroid
inside a

B = Mon I B = Mo Ni
LTL h

current
1101 force per unit
wire
length
between two
carrying
q , Mo Ii Iz
2K h

a- His current Sensitivity of moving coil

galvanometer
¥ NEAT
-

in
voltage sensitivity of moving
coil
galvanometer
NBA
OF =

KT

Ciii ) shunt resistancerequired to convert

galvanometer into
ammeter
current
of range
i
Cig is the
full scale deflection
of galvanometers .

rs = G

Cig II
-

④ Resistance required to converted

galvanometer into voltmeter
of range "
R
Yg 4
: -
Magnetism
B
field due to
magnetic monopole no m a
a. . a .
N
4Th qz

z . TB on the anial line or end on

position of a

bar
magnet
⑤ =

tf; fans: : .
,
. for me .
B -

F. Fit )
broad side
3 .
B on

bar
the
equatorial line or on
position of
a
magnet
B
B→=
IT IIe , ( for me
tf Ma )
-

-
-

,
3h

d. Time
period of angular SHM T =

LITE MB
where I is moment inertia
of
5 .

Magnetic Potential
Energy
⑤m = -
m B Sino
D-m =
-
m .
B

G .
Gauss Law in Magnetism of B. di O
-

F . Inclination lol pls )

At
poles S
Ea
-

Delineation

o
At
equator 8=0
f → Geographic
o
meridian
8
→

HE
[
BE Cos
& HE

Magnetic
=

ZE =
BE Cos 8 Be meridian
ze

Tans
TIE
=

IBE I = TITHE
 Hector M
8 .

Magnetizing -

Minet
9. Relation between
Magnetic field intensely ( H ) Magnetic ,

field LB ) and
Magnetizing vectoring .

B -

-
Bot Bm

Bo = MOM , H =
B- -
M
Mo
B =
no ( Html )
Also
,
M =
Z H
B =
no C Atn ) H
=
No Mr H

B = UH

so
Magnetic susceptibility ( nm ) nm
tf
-

-
.

Relative
sa .
.

Magnetic permeability ( Ma ) un
-
-
I +
Nm
with dielectric constant in electrostatics
analogy .

it =
Molly = tho ( Ita)

a- a Curie 's Law

na I
T

n -
-

Clio where cis called Curie 's

T constant .

M
-

-
c BI
T

ELECTROMAGNETIC INDUCTIONS B
>
7
1 .

Magnetic phenol .
) OB -
-
B. As = BACO SO
y
⑦ 7
>
> B

A
>
B
a
Faraday 's Law
of induction
linked with a coil varies with time
1st Law -

If
an
the
flier EMF is induced across the coil .
,

2nd Law -

to
Magnitude of Induced EMR is
directly proportional
of change flier linked
the rate
with the coil of
e add e - -

dot
a dt

or coil of N turns .

e - - N DI
dt

3 Methods of generating EMF .

B
function of time Ct) e Nuoniotawcoswt
••
as
-

a - -

• ⑦ as a
function of time Ct) e
-
-
NB tawsinwt

& National EMF e = Bill Sino

B) I
general formula ,
e -

-
( it x .

National EMF in rotation

Eg Boo R2
5 e -
-

Energy conservation
•

I
Bff force F IB l
= -
-

- 2
F = B I v
-

R
Power P = F. v
p =
B 212 U2

Power spent in dissipated as Joule 's heat

Pf = IZ R =

43¥12 -
R Pf t.BZ?p
 oirculated
charge let =

DLB
7 Inductance QB 9 I

DOB xd 't
q q

N DIB = LI

8 Mutual Inductance Nada X Iz

Nn 01, = Miz Iz I

N , 10 , =
Npl X
TINY X Moniz

N 0,,
=
Mon , Nz -119421 Iz 2

and
Maa Iz =
Mohana Tiriel Ia On
equating 9- 2

Maz =
Monpnztl Nfl

Similarly Ma, =
Mon , nztlrihl

emf in the coil E= -

radio
dt

9
Self Inductance 091 , NO = LI -
I

Also ,
N / =
(ne ) ( Mont ) ( tar )
N / =
Morita LI 2

LI =
Morita LI

( =
Monte -1192 LI

emf induced when current through the coil varied

E = -

Lolol
dt

stored in Inductor
10
Energy E=1zLI2
 11 AC Generator
E. =
NBA w Sinwt
E =
Eo Sin uit Eo -
- NBA W

ALTERNATING CURRENT

AC
voltage represents as :
.

in
~

Vo
> t

i = iosinwt

1 →
Average value
of current
Iavg 2y÷= 0.637 :O
-
-

Root value current

mean
square ( RMS ) of
→
-

Terms =

lg÷ = 0.707 ! Yams =

gltoz = 0.70711 .

Ac
voltage applied to Resistor
2 a

i. iosinlwt ) i. =
to
R
Power Consumed
Instantaneous Power Pi =i2R=%R sink wt)

Average Power P =

toad =
Error
Vrrgs =
Terras R .

Representation : -
 voltage applied Inductor
3 AC to an

Io I Ve i Tosin
( wt II )
= -
-
= -

w L XL

Inductive Reactance -

Xie wl
Power consumed
Pi
Instant endue power .IO#sinL2wt )
=

Average Power
p = -

iozllo L Sin wt ) 2 =
0

Representation

:& AC
voltage applied to a
capacitor
i Io Sin wt
( +
It )
=

Io =
VI = to
9-
Iwc Xc

capacitative Reactance - Xo -

I
wc

Power consumed
Instantaneous
power
-
Pi =

III x sin we ,

power
Average Tp Total ( seen Czwtl> 0
=
.

Representation : .
 series LCR circuit
5 Ac
voltage applied to

Io = Vo

R 't ( XL Xc )2 -

Impedance R2 + ( XL Xo )
'
Z = -

"
z pit ( WL two )
=
-

Tanf =Xc
R
n Xc -
XL
Of
cos
RZ
=

10
R -

G Resonance XL Xc wot =
1)Woc Wo =

¥
-

LR ) 't ⑥ R
2
Z = =

IRMS =

VOR
sharpness of Resonance
Tow
-

wot
t
.

Quality factor Q -

wrote
Also ,
Q =
I
Wo CR

circuit factor
8 Power
of AC - Power

Instantaneous power
P=VozTe [ Cos 0 -
Coszwt to ]
Power
Average Zwsol
'
p = I

9 Lc oscillation
'
w
÷ w

II
- -
- -
 9=90 Cos wt

f = Eosin wt
to =
go w

Transformer
E. = - N , dot Ez =
-

Nz dot
f- dt

V, = -
N ,
do Vz = -
Nz DI
* dt

¥ Nut Also
II tha
-

- -

, -

ELECTROMAGNETIC WAVES
Displacement current

B.de?=uoiCHid=EodOEdli- ictid=ictEod0Edt
-

of

Ampere Manwell Law of B. dt =

do :c two to dote
dt

Manwell 's Equations

a.) f E. DF -
-
I
Eo

2) Of B. dnt = O

3) Of F. dl→ = -
dod
dt

4) of B. di =
No :c +
Moto dote
dt
 Electromagnetic
Wave
r
→
t

En = Eosin ( Kz wt )
-

Bo Sin Ckz wt )
By
-
=

>

K =
LI

BL
X

speed of propagation V
¥ c ra
-
-
-
- -

Bo =

Eoz Porras
=ERg#
( = 9-

The

Energy and
Energy density of EM waves

ME =

÷ to E

Mrs =

1zBµ÷

OPTICS

Ray optics
a- Relation between
Curvature
focal length and Radius of
f=R 2

Mirror Equation In ÷ ÷
2 + -

Linear
3
Magnification m=h÷= Iu -
 Reflection {inner
where
& Laws of -

uz , Mz , refractive
in den of medium 2
( Snell 's Law ) Wor t . .
medium 1 .

5 Refractive Inder

uz,=I
4 and us are
speed of light in
medium E and 2
respectively
6
Apparent depth
Real
depth Apparent depth d
du
-

- -
-

d
R D A D
( I
1a )
- . -
- .
= -

F TIR
Sin 90 :c critical
u ,z=
Sin :c
where is
angle .

8
Refraction at
spherical Surface
M2
qui Uf Muc
-

Thin lens formula ÷

9 =

÷
-

If
u
Magnification produced by a lens

m
-

th -
-

Ia
lens
19 . Power
of D=
If
Combination lens
of If IT It
12 '
= +
in terms focal
- -
- -

of ,

in terms
length
Power P =P, Pat P
of t ,
t - - -

in terms of m = Mi -

Mz Mz -
- - - .

magnification
 ie
13
Refraction through Prism
Smzt A
Sm =
Cuz ,
-
s .
A applicable for small
angles where
A- is
angle of prism .

ie Lens Makers formula I = -

III -

off
,

15
Optical Instruments
% The
simple Microscope
m
-
- I + D
,
→ Linear
Magnification

Angnlpqathgnification AM . =

Oji
-

Ef
Ciii
compound Microscope
linear
magnification due to Objective
mo
tin to
=
=

linear
magnification due to
eyepiece
D
me =

te

Net
magnification mo me
¥ Efe
= =
.

Iiis Telescope
m -
Ba hfe tho toe
= .
-

tube
length =
feet fo
 Have Optics
to Snell 's Law it , z = Sini
Sin r

Speed in vacuum
Zo u
=

÷ =
of light in medium
speed of light
where C = VA

in Vacuum
Also , u =

f.
=

Wavelength in medium
wavelength
in medium
wavelength ud
'
,
d =

3 .
Optical path ( in vacuum ) =
µ x
Path in medium

a .

Amplitude and
Intensity at
any point in an
Interference
pattern .

a = AT t ai t 2 a , 92 Cos $
I = I, t
Iz t 2 I , I z to S/O
when I, =
Iz = Io I = 2 Io l l + Cos 0) =
4 Io COSI
,
Z

double
5 .

Young 's split experiment

i for
bright fringe path difference , p -
- nd

i :L For dark
fringe g p
= 2n -
I
ad n = I
, 2,3 ,
- - -

Ciii ) Distance
screen
of
nth
bright firing from the centre
of the
,

Nn =
n
Dd n = I, 2, 3 ,
-
-
-

,
d

Cir ) the
Distance
screen
of
nM dark
fringe from the centre
of
,
n'n = 2n -
I Dd
Ld
 "
fringe width . B = Dd
d

vi
wavelength of light need ,
d =

Bpd
lvii )
Angular position of nth bright fringe .

On
hat hdt
= =

viii )
Angular position of nm dark fringe
k 1) I
'
D- n =
= ( 2n -

2d

Ratio maxima and minima

6 .

Intensity at

( Ait 9272
2
Imax = =
rt I

I min ( Ai 9212
-
r -
I

to
path difference when a thin
transparent
Inder
sheet
of
thickness t and
refractive n

p
=
( U 1) -
t

s .

Displacement of the central

bright fringe
An =

By ( u - 9- It =

Id ( n -
1) t

and Fresnel 's distance

9 Diffraction of light
.

in Diffraction at a
'

slit width a'

single of .

• Condition
for nth minimum is

a sin -0 =
nd where n
-

- I ,
2. 3, -
- -

→ condition for nth

Secondary maximum is

sin -0
a I Zn t 1)
21 where n I, 2,3
= = - - -

,
 direction nth minimum
→

Angular position or
of .

On = nd
a

→ Distance
screen ,
of nth minimum
from the centre
of the

un =
NDI
a

→
Angular position of nth
Secondary maximum

of =
( 2n + 1) I
za

→ Distance
centre
of nth
secondary maximum
from the

of the
screen
,

n'n =
( 2n + 1) DX
2 a

central
width
of maximum B 2ps 2¥
=
=

→
Angular spread of central maximum on either side ,

-0 = I I
a

→ Total
angular spread of Central Manimum

2-0=21
a

For diffraction circular diameter d

10 . at a
aperture of
Angular spread of central Mani mum
→

-0=1.224
a

Linear
→
spread n = Do
'
Areal n2=(Do )
→
spread
distance at which the
where Dis the
considered .
effect is
11 .
Fresnel distance Dr .
=
AI
d
12 . Size of Fresnel zone Ap =
,
d D

13 .

Resolving power of
a telescope
Idf ,?zq=

Limit of Resolution of
doe =
D-
a
telescope -petted
1. 22 1

14 .

Resolving power of a
microscope DI = Zunino
x

of Resolution microscope
-Dated
Limit
of a

d =L
2 µ sin -0

15 Law of Malus Io Cos

2016
. I =

:p

a- to
. Brewster Law

Doppler 's effect of

Tpt Rp
u -

light
tan

= 900
↳exter
Boy =

V = I
I =

d =

to

Dual Nature
Photons And
light
of Photoelectric effect
1. →
Energy of photon E hv
hog
-
- =
,

No emitted
per second
N
of photons =¥
→ .

Momentum
of photon HI tf
→
, p = me = -
-
 →
Equivalent mass
of a
photon ,
m =

his
work function Wo h Vo
h÷
→ =
=

Einstein 's
→ kinetic
Energy of photoelectrons is
given by
photoelectric equation
kmax Hmm hv h ( V Vo ) h
# m Wo
[Cy go ]
= = -
=
- = -

If Yo is
stopping potential the mane
• the mum
,

kinetic
Energy of the
ejected photoelectrons ,

K
Ig Mdma ello
= =
×

Intensity of radiation =

Energy = Powe
Area x time Area

Incident Incident
power =

intensity X area

Wave
2. de -

Broglie
→ kinetic
Energy ,
K =

Emir =

aim
momentum ,
P -

J 2 m k

→ de -

Broglie wavelength ,
I =

hp ha gzh =
-

electron beam accelerated

→
Broglie
de -

wavelength
potential
of an

through a difference of u volts is

gzh⇐= 1,137
A =
nm

→
Bragg 's equation for crystal diffraction
2nd Sino order
is -Padd
= nd ,
n is
ofthe spectrum .
 ATOMS
to Distance
of closest Approach and impact parameter
→ K E
of A particle K
Izmir a÷e 2ff÷
.
. - =
= .

→ Distance
of closest approach . no
-
-

fat 2k¥ =a÷e Amie!

.

.
.

Impact parameter
b=a÷↳Ze2fot0k=a÷ze2coto#
zm
2 . Bohr 's
theory of Hydrogen atom
2
k Ze
z
=
M¥2
→ L mu r
nh2Tl
-

= -

→ hv =
Ena -

En .

→ rn = m2 h2 = n ko
& Tl 2M kzez
'
→
Un = 2x K e

n h

kinetic k
Energy = Ze-
2M

Potential
Energy k¥2
=
→
-

22 ed
→ Total
Energy En = -
2
Tinmkn ? =
-

Rnhzc =
-

13N E
.

ell

Also ,
En = -
KE ; PE = -
2K E .
= 2 En
-

k ' et
Frequency In ; n1; )
→ V 2172
mfs
=

,
-

.
 Number
wave T
If =R[n÷ ÷)
→ -

- -

where R = 2x2mk2e4
Ch 3

→ Ionisation potential =

-13%6-22 volt

Tn = 2 Tl rn =
n3h3 =
Tp n
3

% 442 pm kzzeq

NUCLIE
I .
Einstein 's mass -

energy equivalence
E = me

lil C- 12 atom
2. I am U =

If X Mass of

( it ) Nuclear radius ,
R -
-

Ro AH 's
where Ro = 1.2×10
-

15M

Ciii ) Nuclear density , Snu = Nuclear mass =

Mna
Nuclear Holm
f- TIR
's

3. • Mass Defect
gym =
[ zmp + A -2
Mn -

mm )

Binding Energy
'
• =
Cosmic

Binding B. E
•
Energy =

A
Nucleon
fraction
Packing Din
• =

4 .

Radioactivity
% Displacement
as follow -
laws
for radioactive transformations
Dated
are
SEMA CONDUCTOR
Io Intrinsic And Extrinsic Semiconductor
• In intrinsic semiconductor ne =
Nh =
ni

equilibrium menu ni
at =

• Minimum
Energy required to create a hole - electron
pain
h÷ma×
her min
Eg = =

2.
Conductivity
carrier
•

Mobility of a
charge , u
-

t
• Electric Current I = e A ( n ele th n V n )
,

• Electrical
Conductivity ,
r =

GI = e ( he Met n
n Mn )

• Variation in
conductivity with
temperature .

eapf-gff.FI
= -
r
o

3 . P -

n Junction

doc resistance
junction diode
II
The
of
•
rdc
. a =
,

• The
dynamic or doc .
resistance
of junction
a diode ,

Md or Mac = DI
DI

Average value
of doc . obtained from a
half -
wave

rectifier , Ido =
It
TL
•

Average -
value
f- de = 2€
of de .
obtained from a
full -
wave
rectifier .

Tl