Vacuum 71 (2003) 407–415

Mo/Si multilayers for EUV lithography by ion beam

sputter deposition
T. Chasse! a,*, H. Neumanna, B. Ockerb, M. Schererc, W. Franka, F. Frosta,
D. Hirscha, A. Schindlera, G. Wagnera, M. Lorenzd, G. Ottoe,
M. Zeunere, B. Rauschenbacha
a
. Oberflachenmodifizierung
Leibniz-Institut fur . (IOM), Permoserstr. 15, D-04318 Leipzig, Germany
b
Singulus Technologies AG, D-63796 Kahl, Germany
c
Leybold Optics GmbH, D-63755 Alzenau, Germany
d
. Leipzig, Linn!estr. 3, D-04103 Leipzig, Germany
Universitat
e
IOT GmbH, Permoserstr. 15, D-04318 Leipzig, Germany

Received 16 April 2002; accepted 4 October 2002

Abstract

Mo/Si multilayers for applications in extreme ultraviolet (EUV) lithography have been prepared on Si wafer
substrates using ion beam deposition. The multilayers were characterised by transmission electron microscopy,
secondary ion mass spectroscopy, atomic force microscopy, photoelectron spectroscopy, X-ray reflectometry at grazing
incidence, and EUV-reflectivity measurements at nearly normal incidence. The surface and the interfaces of the
multilayers are rather smooth with only small roughness. The material properties of the layers are characterised by
some intermixing and silicide formation at the Mo–Si interfaces and a polycrystalline grain structure of the Mo layers,
which is in agreement with prior studies. Appearance of multilayer diffraction spots, well-resolved Kiessig fringes and
other diffraction evidence indicate very good coherence of the wave fields and in this manner a good reproducibility of
the multilayer period of 6.7 nm. Normal incidence peak reflectivities of 64–65% in the EUV spectral range were
routinely obtained at 13.4 nm wavelength. This reflectivity value and the formation of an EUV standing wave field are
confirmed using photoelectron spectroscopy, and an application for defect particle analysis is proposed. The obtained
results are discussed in comparison to literature data of multilayers prepared by other deposition techniques and
considering new attempts of interface engineering.
r 2003 Elsevier Science Ltd. All rights reserved.

Keywords: Multilayers; Mo; Si; EUV reflectivity; X-ray reflectivity; Ion beam sputter deposition; SIMS; TEM; Photoemission; Soft
X-ray standing waves

1. Introduction

Multilayers with high normal incidence reflec-

*Corresponding author. Tel.: +49-341-235-3294; fax: +49-
341-235-2313. tivity in the extreme ultraviolet (EUV) spectral
E-mail address: chasse@rz.uni-leipzig.de (T. Chass!e). region are important as focusing and imaging

0042-207X/03/$ - see front matter r 2003 Elsevier Science Ltd. All rights reserved.
doi:10.1016/S0042-207X(02)00768-6
408 T. Chass!e et al. / Vacuum 71 (2003) 407–415

elements for EUV lithography (EUVL) [1], syn- 2. Experimental—multilayer deposition

chrotron applications [2] EUV microscopy [3], and
X-ray astronomy [4]. The recent success in the A dual ion beam deposition (DIBD) arrange-
development of such multilayers has been mainly ment as shown in Fig. 1 was used to prepare the
driven by the demands of the EUV lithography, Mo/Si multilayers. The sputter source provides the
which is one of the leading candidates for next ion flux for the sputtering of the target material
generation lithography [5–7]. EUVL is expected to onto the substrate (sputter mode). The so-called
cover several device generations down to structur- assist source may be used for sputter cleaning or
al widths of 30 nm. For this application, reflective structuring of the substrate prior to the deposition,
coatings are necessary for wavelengths of about ion beam thinning of deposited layers (etch mode)
13.4 nm. or to support the ion beam deposition process in
Particular challenges are the requests for high order to affect the physical, chemical, and crystal-
reflectivity, high homogeneity, low surface and lographic layer properties by an ion flux directly
interface roughness, low stress, high temperature impinging on the substrate surface during deposi-
and photon flux stability, and low contamination tion (assist mode). The commercial Cyberite
influence for EUVL applications. In case of DIBD System from Unaxis Deutschland GmbH
multilayers for EUVL mask blanks, the particle used for the depositions permits in situ target
contamination level has also to be taken into change and cooling as well as substrate rotation
account [8]. Very few material combinations are and tilting. Electron cyclotron resonance (ECR)
known, which may provide a high near-normal ion guns mounted on CF 250 flanges permitting
reflectivity. Promising results reported so far were variation of the ion impact angles by definite tilt
based on multilayers with molybdenum (Mo) and were used for both assist and sputter ion sources.
silicon (Si) [9,10]. Deposition techniques like A triple plasma bridge neutraliser set for each ion
electron beam evaporation [10,11], magnetron gun was applied in order to balance possible
sputtering [9,12,13], pulsed laser deposition
(PLD) [13], and ion beam sputter deposition
(IBD) [14] have been used to produce Mo/Si
multilayers. Tremendous success has recently been
achieved using these technologies. EUV reflectiv-
ities up to 70% have been reported in case of
interface engineered Mo/Si layer stacks [15].
However, one of the challenges for EUVL
technology and a potential ‘‘show stopper’’ is the
need for extremely low defect densities on the
reflective EUV masks. IBD has been considered to
be the most favoured deposition technology for
EUVL masks because of the potential advantages
compared to other deposition technologies like
conventional magnetron sputtering [16]. There-
fore, we have started a program to investigate the
properties of such ion beam sputtered reflective
Mo/Si multilayers. Here we will report on the
preparation of Mo/Si multilayers by ion beam
assisted deposition. The results of the character-
isation of the multilayers using microscopy,
spectroscopy, and diffraction techniques will be
presented and discussed in comparison to data on
Mo/Si mirrors from other deposition technologies. Fig. 1. Schematic presentation of a DIBD arrangement.
 T. Chass!e et al. / Vacuum 71 (2003) 407–415 409

Base Flange
Auxiliary Anode
Iron Yoke with Gas Supply
Quartz Cup
Screen Grid
Accelerator Grid

Resonance Region
λ/4 Antenna
Electric Field
Magnetic Field
Aluminium Gasket
Grid Insulation
Breakthrough Protection
Permanent Magnets

Ceramics Lining

Fig. 2. ECR source as developed for ion beam assisted deposition and ion beam figuring.

charging effects due to the positive ions by an 100 nm

appropriate electron flux. A particularly compact
design was developed for the ECR sources as
shown in Fig. 2 [17]. A high-frequency field from a
l=4 antenna is coupled into the discharge area via
a ceramic beaker in close contact to a permanent
magnet, which allows to fulfil the ECR condition
in order to generate the required plasma well
separated from the extraction grid system consist-
ing of three grids. The Mo/Si multilayers were
deposited onto 6 in Si wafers without any special
pretreatment of the substrates. Mo and Si layer
depositions were performed using Xe and partly
Ar sputter ions at beam energies between 400 and
1000 eV. Optimum layer properties as deduced
from film conductivities of Mo test layers were Fig. 3. TEM bright field image of a Mo/Si multilayer on Si
consisting of 50 double layers.
achieved for Xe sputter ions at beam energies 600–
1000 eV, which were finally used for the multilayer
depositions. The total beam currents of 60 (30/ layer thicknesses were controlled by the deposition
45) mA for Xe ions resulted in Mo deposition rates time considering the predetermined rates of
in the range between 1.7 (400 eV Xe) and 4.2 nm/ deposition.
min (1000 eV Xe) and about 10% higher rates for
Si. Reproducibility and stability of the ion beam
was thoroughly checked and confirmed. The 3. Results—characterisation of the multilayers
process pressure was 2.9  10 5 mbar at a total
gas flow of 1.9 sccm for Xe gas. The thickness 3.1. TEM
homogeneity of the deposited layers was deter-
mined to be 0.63% (or 1.3% for 3s) over a Fig. 3 shows a TEM bright-field image of such a
diameter of 120 mm for a shaper-assisted deposi- multilayer stack. The picture was taken with a
tion. Several hundred samples with Mo/Si Phillips CM 200 TEM running at 200 keV. Dark
multilayer stacks, which consist of a 4 nm Si layer, lines represent the Mo layers while the bright ones
a superlattice of 50 double layers of 2.7 nm Mo/ are due to Si. The clearly evident periodicity and
4 nm Si, and a Si finish layer were produced. The homogeneity of the multilayer structure reveals the
410 T. Chass!e et al. / Vacuum 71 (2003) 407–415
002
-
111
000 - Si
220
(a)
(b)
Fig. 4. (a) Diffraction pattern from a Mo/Si multilayer on
Si(0 0 1) obtained by TEM. (b) Zoom of the pattern from (a)
near the (0 0 0) reflex of the c-Si substrate showing the
diffraction spots from the multilayer.
excellent control of the individual layers and the
smooth interfaces. Fig. 4 displays related diffrac-
tion patterns of the transmitted high-energy
electrons. The crystalline structure of the Si
substrate is easily recognised. However, near the
(0 0 0) reflex of the Si wafer in Fig. 4a, a series of
smaller spots extend towards the (0 0 2) reflex.
These smaller spots occur much more clearly in
Fig. 4b, which displays a zoom to the former one
(Fig. 4a). This sequence of spots near (0 0 0) of Si is
Mo
α-Si
(a)
5 nm
S
0.22
(b)
Fig. 5. (a) High-resolution TEM picture (200 kV) of an Mo/Si
multiayer on a Si wafer, showing the Mo and Si layers near the
c-Si substrate. Arrows indicate regions of Mo–Si intermixing,
which results in an interface transition zone. (b) HR-TEM
picture showing the crystalline grain substructure of Mo layers
within a Mo/Si multilayer. The layers and the layer spacing in
crystalline Mo grains are indicated.
due to the deposited multilayer structure. Please,
note that such a sequence of spots can only be
resolved in case of a highly reproducible film
thickness and thus a good periodicity of the
diffracting system. The spot distance in reciprocal
space allows to trace back to the multilayer period
in real space, which gives us about 6.7 nm, in good
accordance to the complementary data as revealed
from the layer spacings in high-resolution TEM
pictures like in Fig. 5. The first picture in Fig. 5a
shows part of the substrate together with the
nearest Si and Mo layers. The crystalline structure
of the Si wafer provides the appropriate length
scale to estimate the layer thicknesses. The dark
Mo layers appear broader than expected from the
 T. Chass!e et al. / Vacuum 71 (2003) 407–415
preadjusted thickness values. While the Mo/Si
interfaces within the field of view appear rather
smooth, nevertheless transition regions (dark grey)
occur between the centre of the Mo layers (dark)
and the Si layers (bright), which indicate an
intermixing of Mo and Si, most probably due to
silicide formation. The width of this intermixing
region seems to be larger at the Mo on Si interface
than at the Si on Mo interface, as may be revealed,
e.g. by looking at the first Mo layer from substrate.
The Si layers clearly lack any features of crystalline
structure and are therefore amorphous. However,
detailed look at the Mo layers in the Fig. 5b
demonstrates presence of crystalline grain struc-
ture, and thus the Mo layers may be regarded to be
essentially polycrystalline.
3.2. SIMS
Secondary ion mass spectroscopy (SIMS) has
been used for elemental depth profiling. A SIMS
depth profile performed with 1 keV O2 ions using
an ATOMIKA SYS 4500 instrument is shown in
Fig. 6. The complete multilayer of about 340 nm
thickness may be investigated with comparable
maximum to minimum intensity contrast ratio,
demonstrating the excellent resolving power. The
relative thicknesses of Mo and Si layers also seem
to be inverted but note that corrections for
material-dependent sputter rates were omitted
here. An evident shoulder in the individual Mo
layer profiles at the Mo on Si interface indicates
(a) an intermixing of both elements and (b)
also a broader intermixing zone at this particular
92
100 Mo
10
30
Si
50× (Mo/Si) on Si(100)
1
0 100 200 300
Nominal depth [nm]
Fig. 6. SIMS depth profile of a Mo/Si multilayer stack on Si
consisting of 50 double layers performed using O2 ions at 1 keV
and normal ion incidence.
411
interface compared to the other one. Traces of B
and Cr contaminants were also observed, but due
to the oxygen probing ions no reliable information
could be obtained regarding oxygen content within
the multilayer.
3.3. XRR
X-ray reflectivity (XRR) measurements at graz-
ing incidence were performed using Cu Ka
radiation. Fig. 7 shows the experimental low-angle
XRR curve of a Mo/Si multilayer in comparison
to a simulation. The relative intensity of the first
Bragg peak corresponds to a high reflectivity of
96.2% at this wavelength of 0.154 nm, again
indicating a low interface roughness of the layers.
The appearance of the fine structure between the
Bragg peaks due to the Kiessig fringes further
demonstrates the excellent periodicity within the
layer stack [18]. The Darwin-type shape of the first
Bragg peak is another direct hint for the high
coherence of the wave field within the layer stack.
The simulation result correlates very well with the
measured data. However, certain important con-
clusions may be drawn from the fits. First, a four-
layer structure consisting of Mo, Si, and two Mo–
Si intermixing layers at the interfaces rather than a
simple two-layer structure (Mo–Si) had to be
included in the fits [19]. Typical thickness data
from the fits are 2.9 nm Mo, 3.3 nm Si, and a total
of 0.5 nm Mo–Si, while interface roughness values
of less than 1.2 nm were determined. This results in
a multilayer period of 6.7 nm, again in good
agreement to the above mentioned HR-TEM and
TED data.
3.4. AFM
AFM measurements were performed on the Si
substrates as well as on the top surfaces of the
multilayers using a Digital Instruments Nano-
Scope IIIa equipped with a Si tip of nominally
10 nm radius in the tapping mode. The root-mean-
square roughness on the multilayer surfaces was
found to be less than 0.18 nm, which was in the
roughness range measured at the Si substrate
surfaces. An AFM picture representing 256  256
pixels (1  1 mm) is shown in Fig. 8. The small
412 T. Chass!e et al. / Vacuum 71 (2003) 407–415

High Resolution X-Ray Reflectometry

Cu Kα radiation
5 multilayer 1286 (50 Mo/Si layers)
10

4
10
Intensity [cps]

3
10

2
10
Fit
1
10

0.5° 1.0° 1.5°

Angle θ
Fig. 7. XRR curves recorded from a Mo/Si multilayer using Cu-Ka radiation at grazing incidence.

250 nm 3 nm 250 nm 3 nm

0 nm 0 nm

(a) (b)

Fig. 8. AFM pictures taken from different Mo/Si multilayers. The height scale and characteristic roughness parameters are also
provided.

number of white hillocks indicates only local pro-
trusions as expressed by typical peak-valley rough-
ness values of only 2–3 nm. There is no evidence for
larger protrusions in these small-area pictures.
3.5. EUV reflectivity
One of the most important multilayer properties
is the near-normal incidence reflectivity. This has
been measured at the PTB beamline at BESSY II
in Berlin using an EUV reflectometer [20].
Representative reflectivity curves for the range
12.5–14 nm are shown in Fig. 9. Data were
recorded at an incidence angle of 1.51. The
maximum reflectivity of 64.8% is achieved at
13.4 nm, and the half width of the reflectivity curve
is about 0.52 nm in this case. We have routinely
obtained peak reflectivities between 64% and 65%
for different investigated Mo/Si multilayer sam-
ples. The two reflectivity curves shown in Fig. 9
represent different analysis spots on the same
multilayer. The observed slight shift of the
reflectivity peaks indicates that the lateral homo-
geneity still needs some further optimisation.
 T. Chass!e et al. / Vacuum 71 (2003) 407–415 413

0.7

0.6

0.5

0.4
R

0.3

0.2

0.1

0.0
12.50 12.75 13.00 13.25 13.50 13.75 14.00 14.25
λ [nm]

Fig. 9. EUV-reflectivity curves measured from a Mo/Si multilayer using the PTB equipment at BESSY II. The incidence angle is 1.51.

3.6. Photoemission and soft X-ray standing waves

Multilayer reflectivity relies on the constructive

interference of the outgoing waves reflected from
all the internal interfaces. However, inside the
multilayer or close to it the outgoing waves will
interfere with the incoming wave field resulting in
a standing wave due to the fixed phase relations
[18]. A check for this standing wave was performed
by photoemission experiments at the U49/-PGM-2
beamline of the BESSY II storage ring. The Mo/Si
multilayer was sputtered in order to clean it from
contaminations and to get a Mo layer on the
surface. Photoelectron spectra were measured in a
UHV chamber at photon energies near 100 eV and
electron emission direction 901 from the incoming
photon direction using an Omicron hemispherical
analyser in an angle-integrating mode. Fig. 10
shows the variation of the intensity of a Mo-
derived valence feature with photon energy re-
corded in the important region close to the Si 2p
absorption at an electron emission angle of 751
after appropriate flux normalisation. The enhance-
ment of the intensity at an energy of 97 eV by a
factor of B3.2–3.4 compared to the baseline Fig. 10. Photoemission intensity measured from a Mo/Si
multilayer demonstrating the intensity enhancement due to
intensity confirms the appearance of the EUV (or formation of a soft X-ray standing wave field in the multilayer.
soft X-ray) standing wave and fits excellently to
the optically determined reflectivity of B0.65 or
65%. This is a further independent confirmation of taking into account the multilayer period of
these reflectivity data. Moreover, the observed 6.7 nm.
shift of the peak maximum with photon incidence So far, no attempts have been made to analyse
angle can be fully accounted for by Bragg’s law the particle contamination level of our multilayers,
414 T. Chass!e et al. / Vacuum 71 (2003) 407–415
mainly because of the unavailability of adequate
equipment for particle identification and analysis
significantly below 100 nm particle size. However,
we suggest, that the concept of using a secondary
signal like photoemission intensity excited by
the standing wave field as described above in
combination with an imaging technique like,
e.g. PEEM may be extremely useful for locat-
ing and identifying defects or particle contamina-
tions of the multilayers just in the interesting
length scale down to 30 nm. This could become a
benefit for contamination inspection of mask
blanks.
4. Discussion
Finally, our results will be compared to the data
from literature, which mostly relate to multilayers
deposited using electron beam evaporation or
magnetron sputtering. Regarding material proper-
ties, our results fit quite well into these data. The
formation of Mo–Si intermixing layers at the
interfaces with an asymmetric thickness as de-
scribed above is observed quite generally and
evidently occurs independent of the deposition
technique. Recently, a transition from amorphous
to polycrystalline Mo layers has been detected,
which takes place at a Mo thickness of about 2 nm
[21]. This also fits well to the polycrystalline grain
structure observed in our and also other TEM
data from Mo/Si multilayers designed for peak
reflectivity at 13.4 nm, which have Mo thicknesses
above this limit, typically. While this general
picture of the material properties of the layers
and their interfaces is quite consistent, some
difference in the reported intermixing and interface
roughness remain, which may be due to the
different deposition techniques and the reached
state of the related deposition technologies [9–15].
For instance, in situ control of the deposition
process by Cu–K reflectivities and ion beam
polishing steps following the deposition of indivi-
dual layers permit efficient growth control result-
ing in improved reflectivities [19,22]. Further
improvements regarding layer smoothness may
be expected from a temperature control during
deposition in order to benefit from diffusion-
induced smoothing [23]. Nevertheless, the peak
reflectivities R reported above for IBD in fact
belong to the highest values reported so far and, in
particular, for IBD. They nearly meet the current
requirements of EUV lithography, which have
been announced by ITRS [8,15] for 2001 with
RB65% but need to be improved to B70% soon.
Slightly superior peak reflectivities of up to 68–
69% have already been achieved using PLD,
magnetron sputtering, and electron beam deposi-
tion [9–13].
The recent results with up to 70% peak
reflectivity in the EUV range have taken advantage
of interface engineering. In particular, ultrathin
interface layers of, e.g. B4C [15] or Mo2C [24] or
substructuring of the Mo layer [14] have been used
to improve interface roughness, suppress intermix-
ing at the interface, reduce stress within the
multilayer structures, and improve the tempera-
ture (or life time) stability of the multilayers.
Insertion of ultrathin EUV-transparent interface
layers in order to prevent silicide formation
resulted in significant improvements of thermal
stability of the multilayers but at the expense of
slightly lower reflectivities in most cases. For
instance, Mo2C interface layers and a complete
substitution of the Mo layer have been used in
order to accomplish this purpose [24]. However,
application of boron carbide (B4C) interface layers
resulted in an improvement of the peak reflectivity
to 70% at 13.5 nm [15]. Boron carbide is a low Z
material that reduces the silicide formation and
increases the reflectivity but also reduces the heat
resistance of the multilayers.
Such interface engineering attempts have not
been included in our IBD technology yet. There
are still plenty of opportunities to optimise the
IBD process for the Mo and Si depositions, e.g. by
application of the assist source for ion beam
polishing or a special temperature regime, which
may permit further improvement of the Mo/Si
multilayer properties obtained by IBD. In sum-
mary, our results clearly demonstrate that high-
quality Mo/Si multilayers can be prepared by IBD.
The technology for the IBD process is going to
close up remaining gaps to other multilayer
deposition techniques and will surely be able to
compete successfully.
 T. Chass!e et al. / Vacuum 71 (2003) 407–415
5. Summary
Mo/Si multilayers for applications in EUV
Lithography were prepared on Si wafer substrates
using IBD. The multilayers were characterised by
several experimental techniques as HR-TEM,
TED, XRR, AFM, SIMS, PES, normal incidence
reflectivity. The surface and the interfaces of the
multilayers appeared rather smooth with compar-
ably small roughness. Intermixing and silicide
formation at the Mo–Si interfaces and a poly-
crystalline grain structure of the Mo layers were
typically detected. Well-resolved multilayer dif-
fraction spots, Kiessig fringes and other diffrac-
tion evidence indicated very good coherence of the
wave fields and in this manner a good reproduci-
bility of the multilayer period of 6.7 nm. Normal
incidence peak reflectivities of 64–65% in the EUV
spectral range were routinely obtained at 13.4 nm
wavelength. The formation of an EUV or soft
X-ray standing wave field was further confirmed
using photoelectron spectroscopy. The results were
discussed in comparison to other deposition
techniques and considering new attempts of inter-
face engineering.
Acknowledgements
We gratefully acknowledge contributions of
further researchers to this project. M. Haidl and
.
S. Mullender (Carl Zeiss Oberkochen) provided
EUV-reflectivity data. TOF-SIMS data were taken
at TASCON GmbH, Munster, . Germany. J.-D.
Hecht and Zhang Lei (Leipzig) took part in the
photoemission studies at BESSY II and P.
Hofmann (BTU Cottbus) supported us in setting
up the measurement equipment in Berlin.
References
[1] Stearns DG, Rosen RS, Vernon SP. Appl Opt 1993;
32:6592.
[2] Ziegler E. Opt Eng 1995;34:445.
[3] Artiuoukov IA, Vinogradov AV, Asadchikov VE, Kasya-
nov YuS, Serov RV, Fedorenko AI, Kondratenko VV,
Yulin SA. Opt Lett 1995;20:1.
415
[4] Golub L, Herant M, Kalata K, Kovas I, Nustrom G,
Paardo F, Spiller E, Wilczynski J. Nature 1990;
344:842.
[5] Bjorkholm JE. Int Technol J 1998;1–8:Q3.
[6] Montcalm C, Bajt S, Mirakami PB, Spiller E, Weber FJ,
Folta JA. In: Emerging lithographic technologies, II, Proc
SPIE 1998;33341:42.
[7] Benschop JPH, VanDijsseldonk AJJ, Kaiser WM, Ockwell
DC. J Vac Sci Technol B 1999;17:2978.
[8] Tong WM, Taylor JS, Hector SD, Shell M. 19th Annual
BACUS Symposium on Photomask Technology and
Management, 1999, Preprint UCRL-JC-135884, 1999;
Tong WM, Taylor JS, Hector SD, Shell M. International
Technology Roadmap for Semiconductors (ITRS), Litho-
graphy, 2000, in press.
[9] Folta JA, Bajt S, Barbee JT, Grabner RF, Mirakami PB,
Nguyen T, Schmidt MA, Spiller E, Walton CC, Wedowski
M, Montcalm C. Proc SPIE 1999;3676:702.
[10] Louis E, Yakshin AE, Gorts. PC, Oestreich S, Stuik R,
.
Maas ELG, Kessels MJH, Bijkerk F, Haidl M, Mullender
S, Mertin M, Schmitz D, Scholze F, Ulm G. Proc SPIE
2000;3997:406.
[11] Lim YC, Westerwalbesloh T, Aschentrup A, Wehmeyer O,
Haindl G, Kleineberg U, Heinzmann U. Appl Phys A
2001;72:121.
[12] Feigl T, Lauth H, Yulin S, Kaiser N. Microelectron Eng
2001;57–58:3.
.
[13] Braun St, Dietsch R, Haidl M, Holz T, Mai H, Mullender
S, Scholz R. Microelectron Eng 2001;57–58:9.
[14] Murakami K, Shiraishi M. Proc SPIE 2001;4506:56.
[15] Bajt S, Alameda J, Barbee T, Clift WM, Folta JA,
Kaufmann B, Spiller E. Proc SPIE 2001;4506:65.
[16] Vernon SP, Kearney PA, Tong W, Prisbrey S, Larson C,
Moore CE, Weber F, Cardinale G, Yan P-Y, Hector S.
18th Annual BACUS Symposium on Photomask Technol-
ogy, 1998, Preprint UCRL-JC-131546, 1998.
[17] Scholze F, Neumann H, Zeuner M, Mai A. Surf Coat
Technol 1997;97:755–8.
[18] Spiller E. Soft X-ray optics SPIE. Bellingham: Optical
Engineering Press, 1994.
[19] Yakshin AE, Louis E, Gorts PC, Maas ELG, Bijkerk F.
Physica B 2000;283:143.
[20] Scholze F, Beckhoff B, Brandt G, Fliegauf R, Gottwald A,
Klein R, Meyer M, Rost D, Schwarz UD, Thornagel R,
.
Thummler J, Veldkamp M, Weser J, Ulm G. Proc SPIE
2001;4344.
[21] Bajt S, Stearns DG, Kearney PA. Appl Phys 2001;
90:1017.
[22] Kleineberg U, Westerwalbesloh T, Wehmeyer O, Sunder-
.
mann M, Brechling A, Heinzmann U, Haidl M, Mullender
S. Proc SPIE 2001;4506:113.
[23] Anopchenko A, Jergel M, Majkova E, Luby S, Holy V,
Aschentrup A, Kolina I, Cheol Lim Y, Haindl G,
Kleineberg U, Heinzmann U. Physica B 2001;305:14.
[24] Feigl T, Yulin S, Kuhlmann T, Kaiser N. Proc SPIE
2001;4506:121.