Chapter 1

1. In order to improve the conductivity of intrinsic semiconductor, impurities will be added to form
extrinsic semiconductor as shown in Figure.

(i) Identify the impurity added and the name of the material formed through this doping
process.
(ii) Briefly describe the doping process for silicon crystal.
(iii) Name the majority carriers and minority carriers in this doping process.

2. Briefly describe the formation of depletion region at the p-n junction. How does the width of this
region change when the junction is (i) forward biased? and (ii) reverse biased?

3. Differentiate between intrinsic and extrinsic semiconductor.

4. Briefly define the following:

(i) Conductor
(ii) Semiconductor
(iii) Insulator
(iv) p-n junction
(v) barrier potential
(vi) Forward bias
(vii) Reverse bias

5. With the aid of diagram, illustrate the covalent bonds in a silicon crystal.

6. Explain the operation of PN junction under forward bias condition with its characteristics.

7. State type of impurity atom added during the doping process, majority and minority current
carriers in a(n):
(i) n-type semiconductor
(ii) p-type semiconductor

8. Describe the application of pn diode.

9. Draw the symbol of diode. Draw its Forward bias and Reverse bias circuit. Explain the function of
the diode with the help of graph of I vs. V.

10. With the aid of diagram, illustrate the doping process of silicon by an impurity of phosphorus.
 Chapter 2
11. You have been asked to design a half-wave rectifier which is to provide an average voltage of 50
V at its output with a step down transformer of turns ratio 2:1.
(i) Design of schematic diagram of the rectifier circuit
(ii) Evaluate the peak value of the output voltage with the aid of waveshape.
𝑨𝑵𝑺: 𝑽𝑷(𝑶𝒖𝒕) = 𝟏𝟓𝟕𝑽
(iii) Evaluate the rms value of the input voltage with the aid of waveshape.
𝑨𝑵𝑺: 𝑽𝑹𝑴𝑺(𝑰𝑵) = 𝟐𝟐𝟑. 𝟏𝟑𝑽

12. Determine the output waveform for the network of Figure and calculate the average dc voltage.

𝑨𝑵𝑺: 𝑽𝑨𝒗𝒆𝒓𝒂𝒈𝒆 = 𝟑𝟔. 𝟎𝟒𝑽

13. The characteristic graph shown in Figure below was obtained during an experiment on a special
diode.

(i) Use the characteristic to identify the type of diode shown in Figure above and state a
typical practical application and sketch its circuit diagram symbol.
(ii) Determine the power dissipated in this diode when a reverse voltage of -12.5V appears
across it.
𝑨𝑵𝑺:P =312.5mW
14. Describe the reason of zener diode is often preferred than PN diode.

15. Determine the state of Zener diode and calculate the values of V L, IS, IL, IZ and PZ in Figure if (i)
RL=120 Ω and (ii) RL=400 Ω.

(i) ANS:𝑽𝑳 = 𝟗𝑽, 𝑰𝑻 = 𝑰𝑳 = 𝟕𝟓𝒎𝑨, 𝑰𝒁 = 𝟎𝒎𝑨

(ii) ANS:𝑽𝑳 = 𝟏𝟑. 𝟖𝟖𝑽, 𝑰𝑻 = 𝟓𝟎𝒎𝑨, 𝑰𝑳 = 𝟑𝟎𝒎𝑨, 𝑰𝒁 = 𝟐𝟎𝒎𝑨

16. Determine the values of I in Figure . ANS: I = 0.965A

17. Determine the values of ID and Vo in the following figures:

(a) Ans :ID=6.26mA and Vo=7.51V

(b) Ans :ID=2.1mA and Vo=5.7V
18. Determine the output voltage for the circuit in Figure (a) for each input voltage in (b) and (c).

Ans :(b) Vo+= 12.5 V and Vo-= - 25V

Ans :(c) Vo+= 6.35 V and Vo-= - 12V

19. Based on the circuit network shown in the Figure below, answer the following questions.

(i) Identify the name of the circuit.

(ii) Determine the peak voltage across each half of the secondary, V peak(sec).
(iii) Determine the peak voltage across RL
(iv) Determine the dc voltage across RL.
(v) Determine the current across RL and each of diode. .
ANS: Vp(sec) =14.14V, 𝑽𝑹𝑳(𝒑𝒆𝒂𝒌) = 𝟏𝟑. 𝟒𝟒𝑽, 𝑽𝑹𝑳(𝑫𝑪) = 𝟖. 𝟓𝟔𝑽, 𝑰𝑫 = 𝟖𝟓. 𝟓𝟔𝒎𝑨

20. Determine the output voltage for the circuit in Figure for each input voltage in (a) and (b).

Ans :(a) Vo+= 0 V and Vo-= - 1V , Ans :(b) Vo+= 20 V and Vo-= 5V
 Chapter 3
21. List the three doped regions of a transistor and briefly explain the role of each doped region in a
transistor.

22. List the applications of BJT.

23. Briefly describe the physical structure of a BJT transistor and how a proper biasing will ensure
operation in the active region. .

24. Draw the block diagram of an n-p-n BJT transistor with the common base configuration by
indicated with the polarity of the applied bias and the direction of the emitter, base and collector
currents, and illustrate the term ‘transistor action’.

(a) The majority carriers in the emitter n-type material are electrons

(b) The base-emitter junction is forward biased to these majority carriers and electrons
cross the junction and appear in the base region

(c) The base region is very thin and only lightly doped with holes, so some
recombination with holes occurs but many electrons are left in the base region

(d) The base-collector junction is reverse biased to holes in the base region and
electrons in the collector region, but is forward biased to electrons in the base
region; these electrons are attracted by the positive potential at the collector
terminal

(e) A large proportion of the electrons in the base region cross the base- collector
junction into the collector region, creating a collector current

25. Define the active, saturation and cutoff regions of a transistor.

Active region is the region normally employed for linear amplifiers.
Cutoff region is defined as that region where the collector current is 0 A.
Saturation region is the region to the left of VCE sat / the vertical portion of the curves
near the origin
26. What names are applied to the two types of BJT transistors? Sketch the basic construction of each
and label the various minority and majority carriers in each. Draw the graphic symbol next to each.

27. What is the major difference between a bipolar and a unipolar device?

28. Which of the transistor currents is always the largest? Which is always the smallest? Which two
currents are relatively close in magnitude?

29. State the biasing condition of BJT at both p-n junctions for cutoff region and saturation region.

30. Derive a formula for α DC in terms of β DC.

31. The transistor has IE = 10 mA and α = 0.98. Determine the value of base and collector currents.

32. If a transistor has a α of 0.97 find the value of β. If β=200, find the value of α.

33. Determine the value of βDC of each transistor in figure below.

34. Figure show the characteristics of a silicon transistor in the common-emitter configuration.

(i) Determine IC at IB = 30 μA and VCE = 10 V. ANS: Ic = 3.4 mA

(ii) Determine IC at VBE = 0.7 V and VCE = 15 V. ANS: Ic = 2.5 mA
(iii) Determine βdc at IB =10 μA and VCE =10V. ANS: βdc=130
 Chapter 4
Fixed-Bias Configuration
35. Given the BJT transistor characteristics of figure below :
(i) Draw a load line on the characteristics determined by E = 21 V and RC = 3 kΩ for a fixed-
bias configuration.
(ii) Choose an operating point midway between cutoff and saturation. Determine the value ofR
B to establish the resulting operating point.
(iii) What are the resulting values of ICQ and VCEQ?
(iv) What is the value of Β at the operating point?
(v) What is the value of a defined by the operating point?
(vi) What is the saturation current (ICsat) for the design?
(vii) Sketch the resulting fixed-bias configuration.
(viii) What is the dc power dissipated by the device at the operating point?
(ix) What is the power supplied by VCC ?
(x) Determine the power dissipated by the resistive elements by taking the difference between
the results of parts (viii) and (ix).

(i) IC=7mA, VCE =21V (vi) 7mA

(ii) IB=25uA, RB =812 Kilo-ohms (vii) 36.55mW
(iii) ICQ=3.4mA, VCEQ =10.75V (viii) 71.92mW
(iv) 136 (ix) 35.37mW
(v) 0.992
36. The output characteristics for a BJT are shown in figure below.
(i) If this device is used in a common-emitter amplifier circuit operating from a 12 V supply with
a base bias of 60 μA and a load resistor of 1 kΩ, construct the load line on the characteristics
graph.
(ii) Determine the value of RB to establish the resulting operating point.
(iii) Determine the values of ICQ and VCEQ and label them on graph.

ANS: (ii) 𝑅𝐵 = 188.33𝑘𝛺, (𝑖𝑖𝑖) VCEQ = 5 V and ICQ = 7 mA

Voltage-Divider Bias Configuration
37. Given the information provided in Figure, using the exact (Thevenin) approach to determine:

(i) RTH =2.353 k ohm

(ii) ETH = 2.869V
(iii) IB = 18.767uA
(iv) IE =2.834 mA
(v) VB =2.64V
(vi) VCE=5.04V
(vii) VE =2.125V

38. Given the BJT transistor characteristics of figure below:

(i) Determine RC and RE for a voltage-divider network having a Q -point of ICQ =5mA and
VCEQ=8V. Use VCC=24V and RC = 3RE.
𝑨𝑵𝑺: 𝑹𝑬 = 𝟖𝟎𝟎𝜴, 𝑹𝑪 = 𝟐. 𝟒𝒌 𝜴
(ii) Determine the value of VE and VB.
 𝑨𝑵𝑺: 𝑽𝑬 ≅ 𝟒𝑽, 𝑽𝑩 = 𝟒. 𝟕𝑽
(iii) Determine the value of R2 if R1 = 𝟐𝟒𝐤𝛀 assuming that βRE >10R2.
𝑨𝑵𝑺: 𝑹𝟐 = 𝟓. 𝟖𝟓𝒌𝜴
(iv) Determine the value of β at the operating point
𝑨𝑵𝑺: 𝜷 == 𝟏𝟑𝟏. 𝟔
39. Determine the following for the voltage-divider configuration of Figure using the approximate
approach if the condition established by 𝛽𝑅𝐸 ≥ 10𝑅2 is satisfied:
(x) IBQ =11.07uA
(xi) ICQ =1.107mA
(xii) VCEQ =14.41V
(xiii) VB =1.818V
(xiv) VE =1.118V

40. For the voltage-divider configuration network shown in Figure Q5 (b), if given β= 100. By using the
exact (Thevenin) approach, evaluate the IE, VE, VCC, VcE and R1.
𝐀𝐍𝐒: 𝐈𝐄 = 𝟐. 𝟎𝟐𝐦𝐀,
𝐕𝐄 = 𝟐. 𝟒𝟐 𝐕,
𝐕𝐂𝐂 = 𝟏𝟔 𝐕,
𝐕𝐂𝐄 = 𝟖. 𝟏𝟖 𝐕,
𝐕𝐁 = 𝟑. 𝟏𝟐 𝐕,
𝐑 𝟏 = 𝟑𝟐. 𝟏𝟔 𝐤𝛀,

41. Design a voltage-divider bias network with a supply of 24 V, a transistor with a beta of 110, and
an operating point of ICQ = 4 mA and VCEQ = 8 V. Given VE = 1/8VCC , the condition 𝜷𝑹𝑬 ≥ 𝟏𝟎 𝑹𝟐
should also be met to provide a high stability factor. Evaluate
(i)The value of RE and RC (ii) The value of VE and VB
𝑨𝑵𝑺: 𝑹𝑬 = 𝟎. 𝟕𝟓𝒌𝜴, 𝑹𝑪 = 𝟑. 𝟐𝟓𝒌𝜴 𝑨𝑵𝑺: 𝑽𝑬 = 𝟑𝑽, 𝑽𝑩 = 𝟑. 𝟕𝑽
(iii) The value of R2 and R1 assuming that
βRE >10R2.
𝑨𝑵𝑺: 𝑹𝟐 = 𝟖. 𝟐𝟓𝒌𝜴, 𝑹𝟏 = 𝟒𝟓. 𝟐𝟔𝒌𝜴
 Chapter 5
42. Briefly describe the structure and the characteristics of ideal Op-Amp.

43. Derive an expression for Vout as a function of V1 and V2 for the circuit shown in Figure below.

𝑾𝒓𝒊𝒕𝒊𝒏𝒈 𝒂 𝒏𝒐𝒅𝒂𝒍 𝒆𝒒𝒖𝒂𝒕𝒊𝒐𝒏 𝒂𝒕 𝒕𝒉𝒆 𝒊𝒏𝒗𝒆𝒓𝒕𝒊𝒏𝒈 𝒊𝒏𝒑𝒖𝒕,

𝑽𝒂 − 𝑽𝑶𝒖𝒕 𝑽𝒂
𝟎= +
𝑹𝟒 𝑹𝟑
𝑾𝒓𝒊𝒕𝒊𝒏𝒈 𝒂 𝒏𝒐𝒅𝒂𝒍 𝒆𝒒𝒖𝒂𝒕𝒊𝒐𝒏 𝒂𝒕 𝒕𝒉𝒆 𝒏𝒐𝒏 − 𝒊𝒏𝒗𝒆𝒓𝒕𝒊𝒏𝒈 𝒊𝒏𝒑𝒖𝒕,
𝑽𝒃 − 𝑽𝟏 𝑽𝒃 − 𝑽𝟐
𝟎= +
𝑹𝟏 𝑹𝟐
Simplifying and collecting terms, we may write
𝑽𝒂 − 𝑽𝑶𝒖𝒕 𝑽𝒂
=−
𝑹𝟒 𝑹𝟑
(𝑹𝟑 + 𝑹𝟒 )𝑽𝒂 = 𝑹𝟑 𝑽𝑶𝒖𝒕 [𝟏]
𝑹𝟐 (𝑽𝒃 − 𝑽𝟏 ) = −𝑹𝟏 (𝑽𝒃 − 𝑽𝟐 )
(𝑹𝟐 + 𝑹𝟏 )𝑽𝒃 = 𝑹𝟐 𝑽𝟏 + 𝑹𝟏 𝑽𝟐 [𝟐]
𝑹𝟐 𝑽𝟏 +𝑹𝟏 𝑽𝟐
From eqn 2, we have 𝑽𝒃 = (𝑹 +𝑹 )
𝟐 𝟏
Since 𝑽𝒂 = 𝑽𝒃 , we can rewrite eqn 1 as
𝑹 𝟐 𝑽𝟏 + 𝑹 𝟏 𝑽𝟐
(𝑹𝟑 + 𝑹𝟒 ) = 𝑹𝟑 𝑽𝑶𝒖𝒕
(𝑹𝟐 + 𝑹𝟏 )
𝑹 𝟐 𝑽 𝟏 + 𝑹 𝟏 𝑽𝟐
𝑽𝑶𝒖𝒕 = (𝑹 + 𝑹𝟒 )
(𝑹𝟐 + 𝑹𝟏 )𝑹𝟑 𝟑

44. Determine the voltage VR1, VR2 and the current through resistor Rf when the input voltages shown
in Figure below are applied to the scaling adder.

𝑨𝑵𝑺: 𝑽𝑹𝟏 = 𝟏 𝑽, 𝑽𝑹𝟐 = 𝟏. 𝟖 𝑽, 𝑰𝒇 = 𝟏𝟐𝟕 𝝁𝑨

45. Evaluate and determine the output voltage in Figure

𝑨𝑵𝑺: 𝑽𝑂𝟏 = −4 𝑽, 𝑽𝑶𝟐 = 𝟒. 𝟐 𝑽
46. With the aid of diagram, illustrate the five terminals of an ideal operational amplifier with their
name. Briefly describe the structure and function of an operational amplifier.

47. Draw the output voltage waveform for the circuit in Figure Q3 (b) with respect to the input. Show
voltage levels.

48. An amplifier system is formed by cascading several identical operational-amplifiers as shown in

FigureQ2 (b). Determine the values for R1, R2, and R3 to ensure an output voltage Vout = 4 V when
the amplifier system supplied with Vin = 8 V. .

The left-hand stage is an inverting amplifer with output voltage

 𝑹𝟐
𝑽𝑶𝒖𝒕𝑨 = − ( )𝑽
𝑹𝟏 𝒊𝒏
𝑨𝑽𝟏 = (𝑽𝑶𝒖𝒕𝑨 /𝑽𝒊𝒏 ) = −(𝑹𝟐 /𝑹𝟏 )
The middle stage is an inverting amplifer with output
𝑽𝑶𝒖𝒕_𝑩 =– (𝟐𝟎𝟎𝒌𝜴/𝟓𝟎𝒌𝜴)𝑽𝑶𝒖𝒕_𝑨
𝑨𝑽𝟐 = (𝑽𝑶𝒖𝒕𝑩 /𝑽𝑶𝒖𝒕𝑨 ) = −(𝟐𝟎𝟎𝒌𝜴/𝟓𝟎𝒌𝜴)

R3 is irrelevant as long as it is greater than zero,

Arbitrarily set 𝑹𝟑 = 𝟏𝒌𝜴.
* Alternative Solution will be considered

The last stage is a voltage follower and so does not affect the output.
𝑽𝑶𝒖𝒕_𝑪 = 𝑽𝑶𝒖𝒕_𝑩
𝑨𝑽𝟑 = (𝑽𝑶𝒖𝒕𝑪 /𝑽𝑶𝒖𝒕_𝑩 ) = 𝟏
Thus,
𝑽𝑶𝒖𝒕_𝑪 = 𝑨𝑽𝟏 𝑨𝑽𝟐 𝑨𝑽𝟑 𝑽𝒊𝒏
𝑽𝑶𝒖𝒕_𝑪 = (𝟐𝟎𝟎𝒌𝜴/𝟓𝟎𝒌𝜴)][−(𝑹𝟐 /𝑹𝟏 )][𝟏]𝑽𝒊𝒏
[−
𝟐𝟎𝟎𝒌𝜴 𝑹𝟐
𝟒𝑽 = ( ) ( ) 𝟖𝑽
𝟓𝟎𝒌𝜴 𝑹𝟏
Arbitrarily set 𝑹𝟏 = 𝟖𝒌𝜴., Then 𝑹𝟐 = 𝟏𝒌𝜴
* Alternative Solution will be considered

49. Evaluate and determine the output voltage in Figure

The output of op-amp A and B are unity follower, therefore

𝑽𝑶𝒖𝒕_𝑨 = 𝟎. 𝟒 𝑽
𝑽𝑶𝒖𝒕_𝑩 = 𝟎. 𝟐 𝑽
𝟖𝟎𝒌𝜴 𝟖𝟎𝒌𝜴
𝑽𝑶𝒖𝒕_𝑪 = −( 𝑽𝑶𝒖𝒕𝑨 ) = − ( (𝟎. 𝟒𝑽)) = −𝟏. 𝟔𝑽
𝟐𝟎𝒌𝜴 𝟐𝟎𝒌𝜴
The output of op amp D is
𝟖𝟎𝒌𝜴 𝟖𝟎𝒌𝜴
𝑽𝑶𝒖𝒕_𝑫 = − ( 𝑽 + 𝑽 )
𝟒𝟎𝒌𝜴 𝑶𝒖𝒕_𝑪 𝟐𝟎𝒌𝜴 𝑶𝒖𝒕_𝑩
𝟖𝟎𝒌𝜴 𝟖𝟎𝒌𝜴
𝑽𝑶𝒖𝒕_𝑫 = − ( (−𝟏. 𝟔𝑽) + (𝟎. 𝟐𝑽))
𝟒𝟎𝒌𝜴 𝟐𝟎𝒌𝜴
𝑽𝑶𝒖𝒕_𝑫 = −((−𝟑. 𝟐𝑽) + 𝟎. 𝟖𝑽) = 𝟐. 𝟒𝑽

50. Design an Op-Amp inverting amplifier to have an input resistance of 10 kΩ and a gain of 20 dB.
𝑨𝑵𝑺: 𝑹𝟐 = 𝑹𝟏 × |𝑨𝑽 | = 𝟏𝟎𝒌𝜴 × 𝟏𝟎 = 𝟏𝟎𝟎𝒌𝜴