Name : MANAS KUMAR MAITY Roll No.

: 22MS60R14

Experiment 3: I-V Characterization of Metal-Semiconductor contacts

Objectives:
1. To measure the current-voltage characteristics of metal-semiconductor contacts
2. To determine whether a given contact-substrate combination produces an ohmic contact or a
Schottky contact.
Introduction

Metal-Semiconductor-Junction is also called hetero-junction because the material on each side of the junction is not the

There are two possible types of metal-semiconductor junctions:

1. Schottky Junction: for n-type semiconductor

for p-type semiconductor

2. Ohmic Junction: for n type semiconductor

for p-type semiconductor

Schottky junction:

The energy band diagrams for the metal and the semiconductor are shown in Figure. The work
function, denoted as Φ, is the energy difference between the vacuum level and the Fermi level. The
vacuum level defines the energy where the electron is free from that particular solid and where the
electron has zero KE.
When the two solids come into contact, the more energetic electrons in the CB of the semiconductor
can readily tunnel into the metal in search of lower empty energy levels and accumulate near the
surface of the metal. Electrons tunneling from the semiconductor leave behind an electron-depleted
region of width W in which there are exposed positively charged donors, in other words, net positive
space charge. The contact potential, called the built-in potential Vo , therefore develops between the
metal and the semiconductor.
Schottky barrier height,
ΦB = Φm − χ = eVo + (Ec − EFn)

Forward bias current

For reverse bias J =- J0

Ohmic junction:

The semiconductor region near the junction in which there are excess electrons is called the
accumulation region. the excess electrons in the accumulation region increase the conductivity of the
semiconductor in this region. When a voltage is applied to the
structure, the voltage drops across the higher resistance region, which
is the bulk semiconductor region. Both the metal and the
accumulation region have comparatively high concentrations of
electrons compared with the bulk of the semiconductor. The current
is therefore determined by the resistance of the bulk region. The
current density is then simply J = σE where σ is the conductivity of
the semiconductor in the bulk and E is the applied field in this
region.
Equipment / Chemicals

1. Keithley 4200 Semiconductor Characterization System

Methodology

1. We put the sample inside the chamber. Then focused the sample by a microscope.
2. We make the contact with probes. Here we use two probes method.
3. One probe is made contact with semiconductor(silicon) and other probe with
metal(nickel)
4. Then we get the I-V characteristics plot.
5. Then one probe is connected with metal(nickel) and another probe with another metal
both are connected with silicon.
6. We get I-V characteristics plot.

Results

Sample – 1

1. When one probe is connected with semiconductor and another with metal we get I-V characteristics
as

From the curve we see that current flow only for one bias. So this is a Schottky junction. Here the
semiconductor is n-type silicon and metal is nickel. As the band gap of nickel is higher than silicon so
the junction is Schottky junction as we get from the experiment.

From the graph (ln I0 vs V) we get ln I0= -20.9907856

Barrier height,

𝑘𝑇 𝐴𝐾𝑇2
𝜑𝐵 = )
𝑙𝑛( 𝐼0
𝑞
Here , T=300K , A= 0.0019625 cm2

We get, 𝜑𝐵=0.805 eV

Theoretical value of 𝜑𝐵 is 0.96

eV.
2. When two probes are connected with two metal contact with semiconductor

In this case we get ohmic like behavior.

Sample – 2

1. When one probe is connected with semiconductor and another with metal we get I-V curve as

Here we get current for forward and reverse bias, so the junction is ohmic. Here the
semiconductors is p-type silicon and metal is nickel. As the band gap of nickel is higher than silicon
its form ohmic contact with p-type silicon.

2. When two probe is connected with two metal tip contact with semiconductor

Here also we get ohmic behavior.